DE69021268T2 - Verfahren zur Herstellung eines Hochdruckphasenmaterials. - Google Patents

Verfahren zur Herstellung eines Hochdruckphasenmaterials.

Info

Publication number
DE69021268T2
DE69021268T2 DE69021268T DE69021268T DE69021268T2 DE 69021268 T2 DE69021268 T2 DE 69021268T2 DE 69021268 T DE69021268 T DE 69021268T DE 69021268 T DE69021268 T DE 69021268T DE 69021268 T2 DE69021268 T2 DE 69021268T2
Authority
DE
Germany
Prior art keywords
production
high pressure
phase material
pressure phase
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69021268T
Other languages
English (en)
Other versions
DE69021268D1 (de
Inventor
Takahiro Imai
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69021268D1 publication Critical patent/DE69021268D1/de
Application granted granted Critical
Publication of DE69021268T2 publication Critical patent/DE69021268T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE69021268T 1989-05-22 1990-05-22 Verfahren zur Herstellung eines Hochdruckphasenmaterials. Expired - Lifetime DE69021268T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12855989 1989-05-22

Publications (2)

Publication Number Publication Date
DE69021268D1 DE69021268D1 (de) 1995-09-07
DE69021268T2 true DE69021268T2 (de) 1996-01-11

Family

ID=14987757

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021268T Expired - Lifetime DE69021268T2 (de) 1989-05-22 1990-05-22 Verfahren zur Herstellung eines Hochdruckphasenmaterials.

Country Status (4)

Country Link
US (1) US5127983A (de)
EP (1) EP0399483B1 (de)
JP (1) JP2654232B2 (de)
DE (1) DE69021268T2 (de)

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DE69016240T3 (de) * 1989-04-06 1999-03-11 Sumitomo Electric Industries Diamant für Abrichtungsvorrichtung
US6007916A (en) * 1989-04-06 1999-12-28 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond for wiring drawing dies and process for producing the same
JPH0590871A (ja) * 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
US5334283A (en) * 1992-08-31 1994-08-02 The University Of North Carolina At Chapel Hill Process for selectively etching diamond
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US5300188A (en) * 1992-11-13 1994-04-05 Kobe Development Corp. Process for making substantially smooth diamond
EP0630994B1 (de) * 1993-01-14 1999-04-07 Sumitomo Electric Industries, Ltd. Verfahren zur dampfphasendiamantsynthese
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
US5363687A (en) * 1993-09-14 1994-11-15 General Electric Company Diamond wire die
US5361621A (en) * 1993-10-27 1994-11-08 General Electric Company Multiple grained diamond wire die
US5465603A (en) * 1993-11-05 1995-11-14 General Electric Company Optically improved diamond wire die
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
JP3344441B2 (ja) * 1994-03-25 2002-11-11 住友電気工業株式会社 表面弾性波素子
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
JP2004538230A (ja) 2001-08-08 2004-12-24 アポロ ダイアモンド，インコーポレイティド 合成ダイヤモンドを生成するためのシステム及び方法
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
KR100463050B1 (ko) * 2002-11-08 2004-12-29 정 부 박 머리핀
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
KR100988104B1 (ko) * 2003-01-28 2010-10-18 스미토모덴키고교가부시키가이샤 다이아몬드 복합 기판 및 그의 제조 방법
US7214359B2 (en) 2003-02-03 2007-05-08 Showa Denko K.K. Cubic boron nitride, catalyst for synthesizing cubic boron nitride, and method for producing cubic boron nitride
GB0317854D0 (en) * 2003-07-30 2003-09-03 Element Six Ltd Method of manufacturing diamond substrates
JP4385764B2 (ja) 2003-12-26 2009-12-16 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法
US7481879B2 (en) * 2004-01-16 2009-01-27 Sumitomo Electric Industries, Ltd. Diamond single crystal substrate manufacturing method and diamond single crystal substrate
US20050181210A1 (en) * 2004-02-13 2005-08-18 Doering Patrick J. Diamond structure separation
JP4736338B2 (ja) 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7615203B2 (en) 2004-11-05 2009-11-10 Sumitomo Electric Industries, Ltd. Single crystal diamond
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法
JP5002982B2 (ja) 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
US8048223B2 (en) * 2005-07-21 2011-11-01 Apollo Diamond, Inc. Grown diamond mosaic separation
US20090127565A1 (en) * 2005-08-09 2009-05-21 Chien-Min Sung P-n junctions on mosaic diamond substrates
US20070036896A1 (en) * 2005-08-09 2007-02-15 Chien-Min Sung Mosaic diamond substrates
US7399358B2 (en) * 2005-09-05 2008-07-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
CN101535533A (zh) * 2006-11-17 2009-09-16 住友电气工业株式会社 制造ⅲ族氮化物晶体的方法
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP2008133151A (ja) * 2006-11-28 2008-06-12 Sumitomo Electric Ind Ltd 結晶成長方法、結晶基板、および半導体デバイス
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
JP4849691B2 (ja) * 2008-12-25 2012-01-11 独立行政法人産業技術総合研究所 大面積ダイヤモンド結晶基板及びその製造方法
JP5003918B2 (ja) * 2009-03-27 2012-08-22 住友電気工業株式会社 ダイヤモンド単結晶基板
JP5509680B2 (ja) * 2009-06-01 2014-06-04 三菱化学株式会社 Ｉｉｉ族窒化物結晶及びその製造方法
KR20120036816A (ko) * 2009-06-01 2012-04-18 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 결정 및 그 제조 방법
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5621994B2 (ja) * 2009-12-16 2014-11-12 独立行政法人産業技術総合研究所 モザイク状ダイヤモンドの製造方法
JP5447206B2 (ja) * 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP5789929B2 (ja) * 2010-08-03 2015-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP2012089613A (ja) * 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板の製造方法
JP2012089612A (ja) * 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板
JP5601634B2 (ja) * 2010-11-24 2014-10-08 住友電気工業株式会社 大面積ｃｖｄダイヤモンド単結晶の製造方法、及びこれによって得られた大面積ｃｖｄダイヤモンド単結晶
JP5810762B2 (ja) * 2011-09-02 2015-11-11 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP2013087029A (ja) * 2011-10-20 2013-05-13 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法
JP5418621B2 (ja) * 2012-02-16 2014-02-19 住友電気工業株式会社 ダイヤモンド単結晶基板
US10487395B2 (en) 2014-06-25 2019-11-26 Sumitomo Electric Industries, Ltd. Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
EP3794631A4 (de) * 2018-05-18 2022-02-23 Board of Trustees of Michigan State University Verfahren zur herstellung grossflächiger diamantsubstrate
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
WO2021162727A1 (en) 2020-02-11 2021-08-19 SLT Technologies, Inc Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use

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US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US3749760A (en) * 1970-04-24 1973-07-31 V Varnin Method of producing diamonds
US3714334A (en) * 1971-05-03 1973-01-30 Diamond Squared Ind Inc Process for epitaxial growth of diamonds
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
DD140984A1 (de) * 1979-01-04 1980-04-09 Erich Wolf Verfahren zur herstellung von hochdruckmodifikationen fester stoffe
JPS61209990A (ja) * 1985-03-14 1986-09-18 Nec Corp ダイヤモンドの気相合成法
DE3690606T (de) * 1985-11-25 1988-08-25
JPS62167294A (ja) * 1986-01-21 1987-07-23 Showa Denko Kk 気相法によるダイヤモンド薄膜の製造法
JPH0658891B2 (ja) * 1987-03-12 1994-08-03 住友電気工業株式会社 薄膜単結晶ダイヤモンド基板
JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
JPH01103993A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンド単結晶成長方法

Also Published As

Publication number Publication date
EP0399483A3 (de) 1994-02-16
DE69021268D1 (de) 1995-09-07
EP0399483B1 (de) 1995-08-02
EP0399483A2 (de) 1990-11-28
JP2654232B2 (ja) 1997-09-17
US5127983A (en) 1992-07-07
JPH0375298A (ja) 1991-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033