DE69024263D1 - Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren - Google Patents

Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren

Info

Publication number
DE69024263D1
DE69024263D1 DE69024263T DE69024263T DE69024263D1 DE 69024263 D1 DE69024263 D1 DE 69024263D1 DE 69024263 T DE69024263 T DE 69024263T DE 69024263 T DE69024263 T DE 69024263T DE 69024263 D1 DE69024263 D1 DE 69024263D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
electronic component
chemical mechanical
polishing
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69024263T
Other languages
English (en)
Other versions
DE69024263T2 (de
Inventor
Jeffrey William Carr
Lawrence Daniel David
William Leslie Guthrie
Frank Benjamin Kaufman
William John Patrick
Kenneth Parker Rodbell
Robert William Pasco
Anton Nenadic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/285,435 external-priority patent/US4954142A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69024263D1 publication Critical patent/DE69024263D1/de
Application granted granted Critical
Publication of DE69024263T2 publication Critical patent/DE69024263T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4864—Cleaning, e.g. removing of solder
DE69024263T 1989-03-07 1990-03-07 Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren Expired - Fee Related DE69024263T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/285,435 US4954142A (en) 1989-03-07 1989-03-07 Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US07/481,941 US5084071A (en) 1989-03-07 1990-02-23 Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor

Publications (2)

Publication Number Publication Date
DE69024263D1 true DE69024263D1 (de) 1996-02-01
DE69024263T2 DE69024263T2 (de) 1996-07-11

Family

ID=26963192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69024263T Expired - Fee Related DE69024263T2 (de) 1989-03-07 1990-03-07 Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren

Country Status (5)

Country Link
US (1) US5084071A (de)
EP (1) EP0401147B1 (de)
CA (1) CA2011709C (de)
DE (1) DE69024263T2 (de)
ES (1) ES2080818T3 (de)

Families Citing this family (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399528A (en) * 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5228886A (en) * 1990-10-09 1993-07-20 Buehler, Ltd. Mechanochemical polishing abrasive
US5308438A (en) * 1992-01-30 1994-05-03 International Business Machines Corporation Endpoint detection apparatus and method for chemical/mechanical polishing
US5445996A (en) * 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
DE69333322T2 (de) * 1992-09-24 2004-09-30 Ebara Corp. Poliergerät
USRE38878E1 (en) * 1992-09-24 2005-11-15 Ebara Corporation Polishing apparatus
US5635083A (en) * 1993-08-06 1997-06-03 Intel Corporation Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
US5332467A (en) * 1993-09-20 1994-07-26 Industrial Technology Research Institute Chemical/mechanical polishing for ULSI planarization
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5525191A (en) * 1994-07-25 1996-06-11 Motorola, Inc. Process for polishing a semiconductor substrate
TW274625B (de) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
EP0738561B1 (de) * 1995-03-28 2002-01-23 Applied Materials, Inc. Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US6547974B1 (en) 1995-06-27 2003-04-15 International Business Machines Corporation Method of producing fine-line circuit boards using chemical polishing
JP3230986B2 (ja) * 1995-11-13 2001-11-19 株式会社東芝 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。
JP3514908B2 (ja) * 1995-11-13 2004-04-05 株式会社東芝 研磨剤
JP3129172B2 (ja) * 1995-11-14 2001-01-29 日本電気株式会社 研磨装置及び研磨方法
EP0779655A3 (de) * 1995-12-14 1997-07-16 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
EP0786504A3 (de) * 1996-01-29 1998-05-20 Fujimi Incorporated Politurzusammensetzung
US5863838A (en) * 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
US6093335A (en) * 1996-08-28 2000-07-25 International Business Machines Corporation Method of surface finishes for eliminating surface irregularities and defects
US5916453A (en) * 1996-09-20 1999-06-29 Fujitsu Limited Methods of planarizing structures on wafers and substrates by polishing
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US5975994A (en) * 1997-06-11 1999-11-02 Micron Technology, Inc. Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6146973A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. High density isolation using an implant as a polish stop
US6002160A (en) * 1997-12-12 1999-12-14 Advanced Micro Devices, Inc. Semiconductor isolation process to minimize weak oxide problems
US6072191A (en) 1997-12-16 2000-06-06 Advanced Micro Devices, Inc. Interlevel dielectric thickness monitor for complex semiconductor chips
US6027998A (en) * 1997-12-17 2000-02-22 Advanced Micro Devices, Inc. Method for fully planarized conductive line for a stack gate
US6093650A (en) * 1997-12-17 2000-07-25 Advanced Micro Devices, Inc. Method for fully planarized conductive line for a stack gate
US6555476B1 (en) 1997-12-23 2003-04-29 Texas Instruments Incorporated Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric
US6004862A (en) * 1998-01-20 1999-12-21 Advanced Micro Devices, Inc. Core array and periphery isolation technique
US6153043A (en) 1998-02-06 2000-11-28 International Business Machines Corporation Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
US6117778A (en) * 1998-02-11 2000-09-12 International Business Machines Corporation Semiconductor wafer edge bead removal method and tool
US6015499A (en) * 1998-04-17 2000-01-18 Parker-Hannifin Corporation Membrane-like filter element for chemical mechanical polishing slurries
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
JP2000040679A (ja) 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
TW416104B (en) * 1998-08-28 2000-12-21 Kobe Steel Ltd Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate
CA2342332A1 (en) 1998-08-31 2000-03-09 Hiroki Terazaki Abrasive liquid for metal and method for polishing
JP4090589B2 (ja) * 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
US6572453B1 (en) 1998-09-29 2003-06-03 Applied Materials, Inc. Multi-fluid polishing process
JP2002528903A (ja) 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6140239A (en) * 1998-11-25 2000-10-31 Advanced Micro Devices, Inc. Chemically removable Cu CMP slurry abrasive
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6413388B1 (en) 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US7425250B2 (en) * 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6610190B2 (en) 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
US7204924B2 (en) * 1998-12-01 2007-04-17 Novellus Systems, Inc. Method and apparatus to deposit layers with uniform properties
US7427337B2 (en) * 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
US6258625B1 (en) 1999-05-18 2001-07-10 International Business Machines Corporation Method of interconnecting electronic components using a plurality of conductive studs
US6554878B1 (en) 1999-06-14 2003-04-29 International Business Machines Corporation Slurry for multi-material chemical mechanical polishing
TW486514B (en) 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6358119B1 (en) * 1999-06-21 2002-03-19 Taiwan Semiconductor Manufacturing Company Way to remove CU line damage after CU CMP
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
TWI227726B (en) 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
CN1107097C (zh) * 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
TW499471B (en) 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6734110B1 (en) 1999-10-14 2004-05-11 Taiwan Semiconductor Manufacturing Company Damascene method employing composite etch stop layer
US6347978B1 (en) * 1999-10-22 2002-02-19 Cabot Microelectronics Corporation Composition and method for polishing rigid disks
KR20010046395A (ko) 1999-11-12 2001-06-15 안복현 연마용 조성물
US6612915B1 (en) 1999-12-27 2003-09-02 Nutool Inc. Work piece carrier head for plating and polishing
US6328633B1 (en) * 2000-01-14 2001-12-11 Agere Systems Guardian Corp. Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
US6375541B1 (en) * 2000-01-14 2002-04-23 Lucent Technologies, Inc. Polishing fluid polishing method semiconductor device and semiconductor device fabrication method
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same
US20090020437A1 (en) * 2000-02-23 2009-01-22 Basol Bulent M Method and system for controlled material removal by electrochemical polishing
US20060131177A1 (en) * 2000-02-23 2006-06-22 Jeffrey Bogart Means to eliminate bubble entrapment during electrochemical processing of workpiece surface
US7141146B2 (en) * 2000-02-23 2006-11-28 Asm Nutool, Inc. Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
US6852208B2 (en) 2000-03-17 2005-02-08 Nutool, Inc. Method and apparatus for full surface electrotreating of a wafer
US6482307B2 (en) 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US20060118425A1 (en) * 2000-04-19 2006-06-08 Basol Bulent M Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate
WO2001084617A1 (en) * 2000-04-27 2001-11-08 Nu Tool Inc. Conductive structure for use in multi-level metallization and process
US6695962B2 (en) 2001-05-01 2004-02-24 Nutool Inc. Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs
US7195696B2 (en) * 2000-05-11 2007-03-27 Novellus Systems, Inc. Electrode assembly for electrochemical processing of workpiece
US6478936B1 (en) * 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
US6406923B1 (en) 2000-07-31 2002-06-18 Kobe Precision Inc. Process for reclaiming wafer substrates
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US7754061B2 (en) * 2000-08-10 2010-07-13 Novellus Systems, Inc. Method for controlling conductor deposition on predetermined portions of a wafer
US6921551B2 (en) * 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
KR100398141B1 (ko) * 2000-10-12 2003-09-13 아남반도체 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6802946B2 (en) 2000-12-21 2004-10-12 Nutool Inc. Apparatus for controlling thickness uniformity of electroplated and electroetched layers
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
US6866763B2 (en) * 2001-01-17 2005-03-15 Asm Nutool. Inc. Method and system monitoring and controlling film thickness profile during plating and electroetching
US6383065B1 (en) 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
KR100557600B1 (ko) * 2001-06-29 2006-03-10 주식회사 하이닉스반도체 나이트라이드 cmp용 슬러리
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
JP2003160877A (ja) * 2001-11-28 2003-06-06 Hitachi Ltd 半導体装置の製造方法および製造装置
JP4095798B2 (ja) * 2001-12-20 2008-06-04 株式会社フジミインコーポレーテッド 研磨用組成物
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
JP2004006628A (ja) * 2002-03-27 2004-01-08 Hitachi Ltd 半導体装置の製造方法
US6858531B1 (en) * 2002-07-12 2005-02-22 Lsi Logic Corporation Electro chemical mechanical polishing method
US20050040049A1 (en) * 2002-09-20 2005-02-24 Rimma Volodarsky Anode assembly for plating and planarizing a conductive layer
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
WO2004036643A2 (de) * 2002-10-16 2004-04-29 Sew-Eurodrive Gmbh & Co Vorrichtung
US20070131563A1 (en) * 2003-04-14 2007-06-14 Asm Nutool, Inc. Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
US7037351B2 (en) * 2003-07-09 2006-05-02 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US7419519B2 (en) * 2005-01-07 2008-09-02 Dynea Chemicals Oy Engineered non-polymeric organic particles for chemical mechanical planarization
US7169313B2 (en) * 2005-05-13 2007-01-30 Endicott Interconnect Technologies, Inc. Plating method for circuitized substrates
EP1772901B1 (de) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Waferhalter und Verfahren zur Halbleiterverarbeitung
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
EP1839695A1 (de) * 2006-03-31 2007-10-03 Debiotech S.A. Vorrichtung zur Injektion einer medizinischen Flüssigkeit
US8500985B2 (en) * 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
TWI386468B (zh) 2006-12-20 2013-02-21 Saint Gobain Ceramics 加工無機非金屬工件之方法
US20080242106A1 (en) * 2007-03-29 2008-10-02 Anuj Sarveshwar Narain CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS FOR REDUCING MATERIAL RE-DEPOSITION DUE TO pH TRANSITIONS
US7910156B2 (en) * 2007-03-30 2011-03-22 Endicott Interconnect Technologies, Inc. Method of making circuitized substrate with selected conductors having solder thereon
US20080237048A1 (en) * 2007-03-30 2008-10-02 Ismail Emesh Method and apparatus for selective electrofilling of through-wafer vias
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
US20090065365A1 (en) * 2007-09-11 2009-03-12 Asm Nutool, Inc. Method and apparatus for copper electroplating
JP5661642B2 (ja) * 2008-12-09 2015-01-28 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 粒子スラリーから大型粒子を選択的に除去するためのフィルタ
US8994173B2 (en) 2013-06-26 2015-03-31 International Business Machines Corporation Solder bump connection and method of making
US9962801B2 (en) * 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
CN105017971A (zh) * 2015-07-14 2015-11-04 东莞环球经典新型材料有限公司 一种人造石英石抛光剂及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL149551B (nl) * 1964-08-04 1976-05-17 Dow Chemical Co Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet.
DE2248719A1 (de) * 1972-10-04 1974-04-11 Alexandr Serafimowits Artjomow Poliermittel fuer oberflaechen von festen koerpern
DE2305188A1 (de) * 1973-02-02 1974-08-08 Wacker Chemitronic Verfahren zur herstellung von polierten halbleiteroberflaechen
JPS55113700A (en) * 1979-02-19 1980-09-02 Fujimi Kenmazai Kogyo Kk Polishing method for gadolinium gallium garnet single crystal
ATE7798T1 (de) * 1979-11-29 1984-06-15 Rhone-Poulenc Industries Verfahren zum polieren mineralischer und organischer werkstoffe.
FR2472601A1 (fr) * 1979-12-27 1981-07-03 Rhone Poulenc Ind Procede de fabrication de compositions de polissage a base de cerium
US4475981A (en) * 1983-10-28 1984-10-09 Ampex Corporation Metal polishing composition and process
JPS61278587A (ja) * 1985-06-04 1986-12-09 Fujimi Kenmazai Kogyo Kk 研磨用組成物
US4769046A (en) * 1985-07-25 1988-09-06 Fujimi Kanmazai Kogyo Kabushiki Kaisha Of Japan Process for polishing surface of memory hard disc
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors

Also Published As

Publication number Publication date
ES2080818T3 (es) 1996-02-16
EP0401147B1 (de) 1995-12-20
CA2011709A1 (en) 1990-09-07
EP0401147A3 (de) 1991-12-04
US5084071A (en) 1992-01-28
EP0401147A2 (de) 1990-12-05
DE69024263T2 (de) 1996-07-11
CA2011709C (en) 1993-12-21

Similar Documents

Publication Publication Date Title
DE69024263T2 (de) Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren
DE69001411T2 (de) Verfahren zur Herstellung eines Substrats für Halbleiteranordnungen.
DE69031699T2 (de) Verfahren zur Haltung eines Substrats
DE3787381D1 (de) Verfahren zur Beschichtung eines Substrats mit einem Silicium und Stickstoff enthaltenden keramischen Material.
DE69029913T2 (de) Verfahren zur Behandlung eines Substrats für Halbleiter-Bauelemente
DE69033135T2 (de) Verfahren zum Schneiden eines Substrates aus Silizium mittels einer preferentiellen Ätzung
DE3856135T2 (de) Verfahren zur Oberflächenbehandlung eines Halbleiterplättchens
DE69127582D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates und Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung dieses Substrates
DE69426791D1 (de) Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats
DE59209959D1 (de) Verfahren zum Kurzzeittempern einer Halbleiterscheibe durch Bestrahlung
DE69232347D1 (de) Verfahren zur Behandlung eines Substrats aus Silizium
DE69224544D1 (de) Verfahren und Vorrichtung zur Trocknung und Härtung einer Beschichtung eines metallischen Substrats
DE69032189T2 (de) Peripherieabdichtung für Halbleiterplättchen und verfahren zu deren Verwendung
DE69209488D1 (de) Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters
DE68921550T2 (de) Verfahren und Gerät zur Bildung eines Pattern-Layouts einer integrierten Halbleiterschaltung.
DE3484059D1 (de) Verfahren und vorrichtung zum beschichten eines substrats.
DE69622824D1 (de) Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats
DE69511639D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und Verarbeitungs-Analyse- und Herstellungsverfahren für deren Substrat
DE3854893D1 (de) Verfahren und Vorrichtung zum Abschrägen der Kerbe eines Halbleiterplättchen
DE59813748D1 (de) Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb
DE59700621D1 (de) Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe
DE69125121T2 (de) Keramisches Substrat für elektronische Schaltung und Verfahren zu dessen Herstellung
DE69621970D1 (de) Verfahren und Vorrichtung zum Hochglanzpolieren von Fasen eines Wafers mit einer Orientierungs-Aufflachung
DE69031394D1 (de) Verfahren zum Herstellen eines keramischen Mehrschichtsubstrates
DE69522976T2 (de) Verfahren zur Herstellung eines Substrats für die Fabrikation von Halbleitervorrichtungen aus Silizium

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee