DE69025875T2 - Leseverstärker - Google Patents

Leseverstärker

Info

Publication number
DE69025875T2
DE69025875T2 DE69025875T DE69025875T DE69025875T2 DE 69025875 T2 DE69025875 T2 DE 69025875T2 DE 69025875 T DE69025875 T DE 69025875T DE 69025875 T DE69025875 T DE 69025875T DE 69025875 T2 DE69025875 T2 DE 69025875T2
Authority
DE
Germany
Prior art keywords
sense amplifier
amplifier
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025875T
Other languages
English (en)
Other versions
DE69025875D1 (de
Inventor
William Stanley Webster
Daniel D Edmonson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69025875D1 publication Critical patent/DE69025875D1/de
Publication of DE69025875T2 publication Critical patent/DE69025875T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
DE69025875T 1989-12-20 1990-12-03 Leseverstärker Expired - Fee Related DE69025875T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/453,635 US5041746A (en) 1989-12-20 1989-12-20 Sense amplifier providing a rapid output transition

Publications (2)

Publication Number Publication Date
DE69025875D1 DE69025875D1 (de) 1996-04-18
DE69025875T2 true DE69025875T2 (de) 1996-07-25

Family

ID=23801416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025875T Expired - Fee Related DE69025875T2 (de) 1989-12-20 1990-12-03 Leseverstärker

Country Status (5)

Country Link
US (1) US5041746A (de)
EP (1) EP0434252B1 (de)
JP (1) JP3086481B2 (de)
KR (1) KR910013279A (de)
DE (1) DE69025875T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684206B1 (fr) * 1991-11-25 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de lecture de fusible de redondance pour memoire integree.
US5264741A (en) * 1992-06-19 1993-11-23 Aptix Corporation Low current, fast, CMOS static pullup circuit for static random-access memories
US5332929A (en) * 1993-04-08 1994-07-26 Xilinx, Inc. Power management for programmable logic devices
US5568066A (en) * 1994-11-17 1996-10-22 Advanced Micro Devices, Inc. Sense amplifier and or gate for a high density programmable logic device
US5850365A (en) * 1994-12-16 1998-12-15 Altera Corporation Sense amplifier with individually optimized high and low power modes
US5525917A (en) * 1994-12-16 1996-06-11 Altera Corporation Sense amplifier with feedback and stabilization
US5587666A (en) * 1995-04-26 1996-12-24 Cyrix Corporation Sense amplifier slew circuitry
KR0146532B1 (ko) * 1995-05-25 1998-11-02 김광호 반도체 메모리 장치의 다이나믹 레벨 컨버터
KR100487636B1 (ko) * 1998-12-30 2006-05-11 주식회사 하이닉스반도체 전류미러형감지증폭기
US6362665B1 (en) * 1999-11-19 2002-03-26 Intersil Americas Inc. Backwards drivable MOS output driver
JP2004199813A (ja) * 2002-12-19 2004-07-15 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7400167B2 (en) * 2005-08-16 2008-07-15 Altera Corporation Apparatus and methods for optimizing the performance of programmable logic devices
US20090046532A1 (en) * 2007-08-17 2009-02-19 Infineon Technologies Ag Supply Voltage for Memory Device
US7975195B1 (en) 2008-08-28 2011-07-05 Marvell International Ltd. Scan architecture for full custom blocks with improved scan latch
WO2013054515A1 (ja) 2011-10-12 2013-04-18 パナソニック株式会社 不揮発性半導体記憶装置およびその製造方法
JP6468920B2 (ja) * 2015-03-31 2019-02-13 株式会社沖データ 発光駆動回路及び画像形成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
US4404474A (en) * 1981-02-06 1983-09-13 Rca Corporation Active load pulse generating circuit
JPS5843622A (ja) * 1981-09-09 1983-03-14 Hitachi Ltd 高速ドライバ−回路
US4471240A (en) * 1982-08-19 1984-09-11 Motorola, Inc. Power-saving decoder for memories
US4647797A (en) * 1984-08-23 1987-03-03 Ncr Corporation Assist circuit for improving the rise time of an electronic signal
JPS6325894A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体記憶装置
US4728827A (en) * 1986-12-03 1988-03-01 Advanced Micro Devices, Inc. Static PLA or ROM circuit with self-generated precharge
JPS63276792A (ja) * 1987-05-07 1988-11-15 Nec Ic Microcomput Syst Ltd センスアンプ回路
US4899070A (en) * 1988-07-13 1990-02-06 Altera Corporation Bit line sense amplifier for programmable logic devices
US4880997A (en) * 1988-08-18 1989-11-14 Ncr Corporation Low noise output buffer circuit

Also Published As

Publication number Publication date
US5041746A (en) 1991-08-20
JP3086481B2 (ja) 2000-09-11
EP0434252A3 (en) 1992-06-03
JPH04167298A (ja) 1992-06-15
KR910013279A (ko) 1991-08-08
EP0434252B1 (de) 1996-03-13
DE69025875D1 (de) 1996-04-18
EP0434252A2 (de) 1991-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee