DE69031276D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69031276D1
DE69031276D1 DE69031276T DE69031276T DE69031276D1 DE 69031276 D1 DE69031276 D1 DE 69031276D1 DE 69031276 T DE69031276 T DE 69031276T DE 69031276 T DE69031276 T DE 69031276T DE 69031276 D1 DE69031276 D1 DE 69031276D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031276T
Other languages
English (en)
Other versions
DE69031276T2 (de
Inventor
Hiroshi Iwahashi
Hiroto Nakai
Kazuhisa Kanazawa
Isao Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14564090A external-priority patent/JP2856848B2/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69031276D1 publication Critical patent/DE69031276D1/de
Application granted granted Critical
Publication of DE69031276T2 publication Critical patent/DE69031276T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
DE69031276T 1989-06-12 1990-06-08 Halbleiterspeicheranordnung Expired - Fee Related DE69031276T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14867789 1989-06-12
JP1040690 1990-01-19
JP14564090A JP2856848B2 (ja) 1989-06-12 1990-06-04 半導体メモリ装置
PCT/JP1990/000755 WO1990016069A1 (en) 1989-06-12 1990-06-08 Semiconductor memory device

Publications (2)

Publication Number Publication Date
DE69031276D1 true DE69031276D1 (de) 1997-09-18
DE69031276T2 DE69031276T2 (de) 1998-01-15

Family

ID=27278954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031276T Expired - Fee Related DE69031276T2 (de) 1989-06-12 1990-06-08 Halbleiterspeicheranordnung

Country Status (4)

Country Link
US (3) US5258958A (de)
EP (1) EP0477369B1 (de)
DE (1) DE69031276T2 (de)
WO (1) WO1990016069A1 (de)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990016069A1 (en) * 1989-06-12 1990-12-27 Kabushiki Kaisha Toshiba Semiconductor memory device
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JP2904645B2 (ja) * 1992-05-28 1999-06-14 株式会社東芝 不揮発性半導体メモリ
US5450426A (en) * 1992-12-18 1995-09-12 Unisys Corporation Continuous error detection using duplicate core memory cells
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
JP3563452B2 (ja) * 1994-08-10 2004-09-08 株式会社東芝 セル閾値分布検知回路およびセル閾値分布検知方法
JP3337578B2 (ja) * 1994-11-29 2002-10-21 三菱電機システムエル・エス・アイ・デザイン株式会社 半導体装置およびその製造方法
US5537358A (en) * 1994-12-06 1996-07-16 National Semiconductor Corporation Flash memory having adaptive sensing and method
FR2728380A1 (fr) * 1994-12-20 1996-06-21 Sgs Thomson Microelectronics Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante
JPH08180698A (ja) * 1994-12-22 1996-07-12 Toshiba Corp 半導体記憶装置
US6292424B1 (en) 1995-01-20 2001-09-18 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit
JP3274306B2 (ja) * 1995-01-20 2002-04-15 株式会社東芝 半導体集積回路装置
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
WO1996024936A1 (en) * 1995-02-10 1996-08-15 Micron Quantum Devices, Inc. Fast-sensing amplifier for flash memory
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5511164A (en) 1995-03-01 1996-04-23 Unisys Corporation Method and apparatus for determining the source and nature of an error within a computer system
KR100197554B1 (ko) * 1995-09-30 1999-06-15 윤종용 반도체 메모리장치의 고속테스트 방법
US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
JP3404712B2 (ja) * 1996-05-15 2003-05-12 株式会社東芝 不揮発性半導体記憶装置及びその書き込み方法
WO1997050089A1 (en) * 1996-06-24 1997-12-31 Advanced Micro Devices, Inc. A method for a multiple bits-per-cell flash eeprom with page mode program and read
US5731734A (en) * 1996-10-07 1998-03-24 Atmel Corporation Zero power fuse circuit
US6078518A (en) * 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5790453A (en) * 1996-10-24 1998-08-04 Micron Quantum Devices, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5768287A (en) 1996-10-24 1998-06-16 Micron Quantum Devices, Inc. Apparatus and method for programming multistate memory device
US5953745A (en) * 1996-11-27 1999-09-14 International Business Machines Corporation Redundant memory array
TW367503B (en) * 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
KR100240418B1 (ko) * 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
JP3532725B2 (ja) * 1997-02-27 2004-05-31 株式会社東芝 半導体集積回路
JP3001454B2 (ja) * 1997-04-23 2000-01-24 日本電気アイシーマイコンシステム株式会社 半導体装置
JPH10308100A (ja) * 1997-05-06 1998-11-17 Mitsubishi Electric Corp 半導体記憶装置
KR100275132B1 (ko) * 1997-06-24 2000-12-15 김영환 전류미러형 감지 증폭기
JP3730373B2 (ja) * 1997-09-02 2006-01-05 株式会社東芝 半導体記憶装置
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
EP0936621B1 (de) * 1998-02-13 2006-04-26 STMicroelectronics S.r.l. Verbesserter Leseverstärker für nichtflüchtigen Speicher mit erweitertem Versorgungsspannungsbereich
EP0936620A1 (de) * 1998-02-13 1999-08-18 STMicroelectronics S.r.l. Bitleitungspolarisationssystem für Leseverstärker eines nichtflüchtiges Speichers mit erweitertem Versorgungsspannungsbereich
US6205515B1 (en) * 1998-03-16 2001-03-20 Winbond Electronic Corporation Column redundancy circuitry with reduced time delay
JP2000090682A (ja) * 1998-09-10 2000-03-31 Toshiba Corp 半導体記憶装置
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
DE19913570C2 (de) * 1999-03-25 2001-03-08 Siemens Ag Betriebsverfahren für einen integrierten Speicher und integrierter Speicher
JP3620992B2 (ja) * 1999-04-23 2005-02-16 株式会社 沖マイクロデザイン 半導体記憶装置
JP4002710B2 (ja) 2000-01-31 2007-11-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4077140B2 (ja) * 2000-06-30 2008-04-16 富士通株式会社 半導体記憶装置
JP4250325B2 (ja) * 2000-11-01 2009-04-08 株式会社東芝 半導体記憶装置
US6563743B2 (en) * 2000-11-27 2003-05-13 Hitachi, Ltd. Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy
US7177181B1 (en) * 2001-03-21 2007-02-13 Sandisk 3D Llc Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
US6396740B1 (en) * 2001-08-10 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd Reference cell circuit for split gate flash memory
KR100454145B1 (ko) * 2001-11-23 2004-10-26 주식회사 하이닉스반도체 플래쉬 메모리 장치
DE10162260B4 (de) * 2001-12-18 2006-04-06 Infineon Technologies Ag Integrierter Speicher mit einer Vorladeschaltung zur Vorladung einer Bitleitung
US6952375B2 (en) * 2001-12-24 2005-10-04 Intel Corporation Self-timed voltage-subtraction sneak current cancellation method and apparatus
US6621739B2 (en) * 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US7120068B2 (en) * 2002-07-29 2006-10-10 Micron Technology, Inc. Column/row redundancy architecture using latches programmed from a look up table
US7324394B1 (en) 2002-08-01 2008-01-29 T-Ram Semiconductor, Inc. Single data line sensing scheme for TCCT-based memory cells
US6903987B2 (en) * 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
JP4002275B2 (ja) * 2003-04-24 2007-10-31 スパンション エルエルシー 不揮発性半導体メモリ
US6845052B1 (en) * 2003-05-30 2005-01-18 Macronix International Co., Ltd. Dual reference cell sensing scheme for non-volatile memory
US6839279B2 (en) * 2003-06-06 2005-01-04 Fujitsu Limited Nonvolatile semiconductor memory device
ITMI20031619A1 (it) * 2003-08-06 2005-02-07 St Microelectronics Srl Amplificatore di rilevamento perfezionato.
JP4133692B2 (ja) * 2003-08-29 2008-08-13 メンター・グラフィクス・コーポレーション 不揮発性半導体記憶装置
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
JP2005141827A (ja) * 2003-11-06 2005-06-02 Sanyo Electric Co Ltd 半導体記憶装置およびその不揮発性メモリ検証方法、マイクロコンピュータおよびその不揮発性メモリ制御方法
EP1717816B1 (de) * 2004-02-19 2008-12-24 Spansion LLc Strom-spannungs-umsetzungsschaltung und steuerverfahren dafür
US6972994B2 (en) * 2004-03-09 2005-12-06 Silicon Storage Technology, Inc. Circuit and a method to screen for defects in an addressable line in a non-volatile memory
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US7236415B2 (en) * 2004-09-01 2007-06-26 Micron Technology, Inc. Sample and hold memory sense amplifier
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7315916B2 (en) 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
KR100582392B1 (ko) * 2004-12-28 2006-05-22 주식회사 하이닉스반도체 반도체메모리소자
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
KR100991408B1 (ko) * 2005-07-04 2010-11-03 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 테스트용 회로, 웨이퍼, 측정장치, 디바이스 제조방법 및표시장치
KR100769796B1 (ko) * 2006-05-12 2007-10-25 주식회사 하이닉스반도체 저전압용 롬
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US20090046532A1 (en) * 2007-08-17 2009-02-19 Infineon Technologies Ag Supply Voltage for Memory Device
JP5060435B2 (ja) * 2008-09-04 2012-10-31 株式会社東芝 半導体記憶装置
US9159452B2 (en) 2008-11-14 2015-10-13 Micron Technology, Inc. Automatic word line leakage measurement circuitry
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
KR101147295B1 (ko) * 2010-10-28 2012-05-18 에스케이하이닉스 주식회사 반도체 장치의 리시버 회로 및 신호 수신방법
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
US8634264B2 (en) 2011-10-26 2014-01-21 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for measuring leakage current
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9288161B2 (en) * 2011-12-05 2016-03-15 International Business Machines Corporation Verifying the functionality of an integrated circuit
US9275674B2 (en) * 2014-03-11 2016-03-01 Marvell International Ltd. Spindle motor for hard disk drive and method of fabrication thereof
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
CN104112475B (zh) * 2014-07-21 2017-02-15 中国人民解放军国防科学技术大学 一种伪差分读取非易失存储器结构
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US10163917B2 (en) 2016-11-01 2018-12-25 Micron Technology, Inc. Cell disturb prevention using a leaker device to reduce excess charge from an electronic device
US10650978B2 (en) 2017-12-15 2020-05-12 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
US11488658B2 (en) * 2020-04-29 2022-11-01 Qualcomm Incorporated Write assist scheme with bitline
US20230395101A1 (en) * 2022-06-02 2023-12-07 Micron Technology, Inc. Multi-level cells, and related arrays, devices, systems, and methods

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
WO1982002276A1 (en) 1980-12-24 1982-07-08 Jiang Ching Lin Multi-bit read only memory cell sensing circuit
JPS58137327A (ja) * 1982-02-10 1983-08-15 Toshiba Corp 半導体集積回路
EP0122564B1 (de) 1983-04-07 1990-07-18 Kabushiki Kaisha Toshiba Festwertspeicher
JPS6089899A (ja) * 1983-10-24 1985-05-20 Nec Corp メモリ回路
US4604732A (en) * 1984-05-29 1986-08-05 Thomson Components-Mostek Corporation Power supply dependent voltage reference circuit
JPS6173300A (ja) * 1984-09-17 1986-04-15 Toshiba Corp 半導体記憶装置
JPS61255597A (ja) * 1985-05-07 1986-11-13 Toshiba Corp 不揮発性半導体記憶装置
JPS63107225A (ja) * 1986-10-23 1988-05-12 Nec Ic Microcomput Syst Ltd 相補型インバ−タ回路
JPS63244494A (ja) * 1987-03-31 1988-10-11 Toshiba Corp 半導体記憶装置
JPH0673240B2 (ja) * 1987-07-20 1994-09-14 株式会社東芝 読み出し専用半導体メモリ
WO1990016069A1 (en) * 1989-06-12 1990-12-27 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2659436B2 (ja) * 1989-08-25 1997-09-30 富士通株式会社 半導体記憶装置
JP2647527B2 (ja) * 1990-02-21 1997-08-27 シャープ株式会社 センス増幅回路
KR940006079B1 (ko) * 1991-06-14 1994-07-06 삼성전자 주식회사 반도체 메모리 장치
JPH0689899A (ja) * 1991-09-09 1994-03-29 Nippon Telegr & Teleph Corp <Ntt> 半導体ウェハ加熱装置
JPH06173300A (ja) * 1992-12-11 1994-06-21 Hitachi Constr Mach Co Ltd 油圧ショベルの流量制御装置

Also Published As

Publication number Publication date
EP0477369A1 (de) 1992-04-01
US5321655A (en) 1994-06-14
WO1990016069A1 (en) 1990-12-27
EP0477369A4 (de) 1995-03-22
EP0477369B1 (de) 1997-08-13
US5450361A (en) 1995-09-12
DE69031276T2 (de) 1998-01-15
US5258958A (en) 1993-11-02

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