DE69031748D1 - Plasmabehandlung mit Metallmasken-Integration - Google Patents

Plasmabehandlung mit Metallmasken-Integration

Info

Publication number
DE69031748D1
DE69031748D1 DE69031748T DE69031748T DE69031748D1 DE 69031748 D1 DE69031748 D1 DE 69031748D1 DE 69031748 T DE69031748 T DE 69031748T DE 69031748 T DE69031748 T DE 69031748T DE 69031748 D1 DE69031748 D1 DE 69031748D1
Authority
DE
Germany
Prior art keywords
plasma treatment
metal mask
mask integration
integration
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031748T
Other languages
English (en)
Other versions
DE69031748T2 (de
Inventor
Michael Gulla
Prasit Sricharoenchaikit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Application granted granted Critical
Publication of DE69031748D1 publication Critical patent/DE69031748D1/de
Publication of DE69031748T2 publication Critical patent/DE69031748T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
DE69031748T 1989-05-18 1990-03-20 Plasmabehandlung mit Metallmasken-Integration Expired - Fee Related DE69031748T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/353,770 US5053318A (en) 1989-05-18 1989-05-18 Plasma processing with metal mask integration

Publications (2)

Publication Number Publication Date
DE69031748D1 true DE69031748D1 (de) 1998-01-08
DE69031748T2 DE69031748T2 (de) 1998-06-25

Family

ID=23390501

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031748T Expired - Fee Related DE69031748T2 (de) 1989-05-18 1990-03-20 Plasmabehandlung mit Metallmasken-Integration

Country Status (4)

Country Link
US (1) US5053318A (de)
EP (1) EP0397988B1 (de)
JP (1) JP3010678B2 (de)
DE (1) DE69031748T2 (de)

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JP2001234356A (ja) * 2000-02-24 2001-08-31 Seiko Epson Corp 膜の製造方法及びこれにより得られる膜
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
CN100504598C (zh) * 2000-07-16 2009-06-24 得克萨斯州大学系统董事会 用于平版印刷工艺中的高分辨率重叠对齐方法和系统
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AU2001286573A1 (en) 2000-08-21 2002-03-04 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
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US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
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US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
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US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
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US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7256470B2 (en) * 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7576369B2 (en) 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20060030149A1 (en) * 2004-08-06 2006-02-09 Steven Leith Depositing material on photosensitive material
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
EP1957249B1 (de) 2005-12-08 2014-11-12 Canon Nanotechnologies, Inc. Verfahren und system zur doppelseitigen musterbildung auf substraten
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
JP4675227B2 (ja) * 2005-12-21 2011-04-20 トヨタ自動車株式会社 凸部の頂面に被覆膜を形成する方法
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
KR20090003153A (ko) 2006-04-03 2009-01-09 몰레큘러 임프린츠 인코퍼레이티드 다수의 필드와 정렬 마크를 갖는 기판을 동시에 패턴화하는방법
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US7547398B2 (en) 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
EP2335288A4 (de) 2008-09-15 2013-07-17 Osi Optoelectronics Inc Fischgräten-fotodiode mit dünner aktiver schicht und flacher n+-schicht sowie herstellungsverfahren dafür
TW201026513A (en) * 2009-01-08 2010-07-16 Univ Nat Cheng Kung Imprinting process of polyimide
US8399909B2 (en) * 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
CN112531173A (zh) * 2019-09-17 2021-03-19 宁德新能源科技有限公司 金属箔处理工艺、电极极片及电化学装置
CN113485581A (zh) * 2021-07-02 2021-10-08 浙江鑫柔科技有限公司 一种用于在基板上形成金属网格的方法

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Also Published As

Publication number Publication date
JP3010678B2 (ja) 2000-02-21
EP0397988A3 (de) 1991-10-09
EP0397988A2 (de) 1990-11-22
DE69031748T2 (de) 1998-06-25
JPH0394418A (ja) 1991-04-19
US5053318A (en) 1991-10-01
EP0397988B1 (de) 1997-11-26

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SHIPLEY CO. INC., MARLBOROUGH, MASS., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee