DE69031796D1 - Leistungshalbleiteranordnung vom Drucktyp - Google Patents

Leistungshalbleiteranordnung vom Drucktyp

Info

Publication number
DE69031796D1
DE69031796D1 DE69031796T DE69031796T DE69031796D1 DE 69031796 D1 DE69031796 D1 DE 69031796D1 DE 69031796 T DE69031796 T DE 69031796T DE 69031796 T DE69031796 T DE 69031796T DE 69031796 D1 DE69031796 D1 DE 69031796D1
Authority
DE
Germany
Prior art keywords
semiconductor device
power semiconductor
pressure type
pressure
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031796T
Other languages
English (en)
Other versions
DE69031796T2 (de
Inventor
Hideo Matsuda
Susumu Iesaka
Takashi Fujiwara
Michiaki Hiyoshi
Hisashi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69031796D1 publication Critical patent/DE69031796D1/de
Application granted granted Critical
Publication of DE69031796T2 publication Critical patent/DE69031796T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
DE1990631796 1989-10-02 1990-10-02 Leistungshalbleiteranordnung vom Drucktyp Expired - Fee Related DE69031796T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25741289A JPH0680818B2 (ja) 1989-10-02 1989-10-02 電力用圧接型半導体装置

Publications (2)

Publication Number Publication Date
DE69031796D1 true DE69031796D1 (de) 1998-01-22
DE69031796T2 DE69031796T2 (de) 1998-04-23

Family

ID=17306019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990631796 Expired - Fee Related DE69031796T2 (de) 1989-10-02 1990-10-02 Leistungshalbleiteranordnung vom Drucktyp

Country Status (5)

Country Link
US (1) US5198882A (de)
EP (1) EP0421344B1 (de)
JP (1) JPH0680818B2 (de)
KR (1) KR940008217B1 (de)
DE (1) DE69031796T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514615B1 (de) * 1991-05-23 1995-05-03 STMicroelectronics S.r.l. Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
DE69321966T2 (de) * 1993-12-24 1999-06-02 Cons Ric Microelettronica Leistungs-Halbleiterbauelement
DE69321965T2 (de) * 1993-12-24 1999-06-02 Cons Ric Microelettronica MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5652467A (en) * 1995-07-27 1997-07-29 Hitachi, Ltd. Semiconductor device and package structure therefore and power inverter having semiconductor device
DE19800469A1 (de) * 1998-01-09 1999-07-15 Asea Brown Boveri Niederinduktiv angesteuerter, gategesteuerter Thyristor
US7485920B2 (en) * 2000-06-14 2009-02-03 International Rectifier Corporation Process to create buried heavy metal at selected depth
DE102004058946B4 (de) * 2004-12-08 2009-06-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Hilfsanschluss
TWI344469B (en) 2005-04-07 2011-07-01 Nippon Catalytic Chem Ind Polyacrylic acid (salt) water-absorbent resin, production process thereof, and acrylic acid used in polymerization for production of water-absorbent resin
EP1837348B9 (de) 2006-03-24 2020-01-08 Nippon Shokubai Co.,Ltd. Wasserabsorbierendes Harz und Verfahren zu seiner Herstellung
CN105771945A (zh) 2009-09-29 2016-07-20 株式会社日本触媒 颗粒状吸水剂及其制造方法
EP3646376B1 (de) * 2017-07-13 2020-09-16 ABB Power Grids Switzerland AG Bypass-thyristorvorrichtung mit hohlraum innerhalb einer kontaktplatte für die ausdehnung eines gases

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1124176A (en) * 1966-02-24 1968-08-21 Licentia Gmbh Improvements in semiconductor switching devices
JPS5871658A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
JPS58169972A (ja) * 1982-03-31 1983-10-06 Toshiba Corp 半導体装置
JPS594033A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 圧接型半導体装置
JPH0691246B2 (ja) * 1985-09-02 1994-11-14 株式会社日立製作所 半導体装置
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
JPS62163371A (ja) * 1986-01-13 1987-07-20 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS6358376A (ja) * 1986-08-29 1988-03-14 Fuji Xerox Co Ltd 画像記録方法
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
EP0421344A1 (de) 1991-04-10
KR910008860A (ko) 1991-05-31
US5198882A (en) 1993-03-30
KR940008217B1 (ko) 1994-09-08
JPH03119762A (ja) 1991-05-22
JPH0680818B2 (ja) 1994-10-12
DE69031796T2 (de) 1998-04-23
EP0421344B1 (de) 1997-12-10

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee