DE69031820T2 - Verfahren und Gerät zur Erzeugung eines flachen Plasmas mittels magnetischer Kupplung - Google Patents

Verfahren und Gerät zur Erzeugung eines flachen Plasmas mittels magnetischer Kupplung

Info

Publication number
DE69031820T2
DE69031820T2 DE69031820T DE69031820T DE69031820T2 DE 69031820 T2 DE69031820 T2 DE 69031820T2 DE 69031820 T DE69031820 T DE 69031820T DE 69031820 T DE69031820 T DE 69031820T DE 69031820 T2 DE69031820 T2 DE 69031820T2
Authority
DE
Germany
Prior art keywords
planar
plasma
generating
enclosure
magnetic coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69031820T
Other languages
English (en)
Other versions
DE69031820D1 (de
Inventor
John Seldon Ogle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23554962&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69031820(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69031820D1 publication Critical patent/DE69031820D1/de
Application granted granted Critical
Publication of DE69031820T2 publication Critical patent/DE69031820T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
DE69031820T 1989-08-14 1990-08-11 Verfahren und Gerät zur Erzeugung eines flachen Plasmas mittels magnetischer Kupplung Expired - Lifetime DE69031820T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/393,504 US4948458A (en) 1989-08-14 1989-08-14 Method and apparatus for producing magnetically-coupled planar plasma

Publications (2)

Publication Number Publication Date
DE69031820D1 DE69031820D1 (de) 1998-01-29
DE69031820T2 true DE69031820T2 (de) 1998-06-25

Family

ID=23554962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031820T Expired - Lifetime DE69031820T2 (de) 1989-08-14 1990-08-11 Verfahren und Gerät zur Erzeugung eines flachen Plasmas mittels magnetischer Kupplung

Country Status (8)

Country Link
US (1) US4948458A (de)
EP (1) EP0413282B1 (de)
JP (2) JP3114873B2 (de)
KR (1) KR100188076B1 (de)
AT (1) ATE161357T1 (de)
DE (1) DE69031820T2 (de)
DK (1) DK0413282T3 (de)
ES (1) ES2110955T3 (de)

Families Citing this family (406)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3834984A1 (de) * 1988-10-14 1990-04-19 Leybold Ag Einrichtung zur erzeugung von elektrisch geladenen und/oder ungeladenen teilchen
US5421891A (en) * 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
JP2519364B2 (ja) * 1990-12-03 1996-07-31 アプライド マテリアルズ インコーポレイテッド Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
EP0512677B1 (de) * 1991-04-04 1999-11-24 Hitachi, Ltd. Verfahren und Vorrichtung zur Plasmabehandlung
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JP2635267B2 (ja) * 1991-06-27 1997-07-30 アプライド マテリアルズ インコーポレイテッド Ｒｆプラズマ処理装置
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US5772832A (en) * 1991-06-27 1998-06-30 Applied Materials, Inc Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5397962A (en) * 1992-06-29 1995-03-14 Texas Instruments Incorporated Source and method for generating high-density plasma with inductive power coupling
US5334264A (en) * 1992-06-30 1994-08-02 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Titanium plasma nitriding intensified by thermionic emission source
WO1994006263A1 (en) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
US6194325B1 (en) 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
KR100281345B1 (ko) 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
US5565114A (en) * 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
TW280083B (de) * 1993-03-04 1996-07-01 Tokyo Electron Co Ltd
FR2707449B1 (fr) * 1993-07-05 1995-08-11 Cit Alcatel Réacteur à plasma pour un procédé de dépôt ou de gravure.
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
TW273067B (de) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
GB9321489D0 (en) * 1993-10-19 1993-12-08 Central Research Lab Ltd Plasma processing
US5619103A (en) * 1993-11-02 1997-04-08 Wisconsin Alumni Research Foundation Inductively coupled plasma generating devices
WO1995015672A1 (en) * 1993-12-01 1995-06-08 Wisconsin Alumni Research Foundation Method and apparatus for planar plasma processing
JPH07161493A (ja) * 1993-12-08 1995-06-23 Fujitsu Ltd プラズマ発生装置及び方法
TW293983B (de) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5783492A (en) * 1994-03-04 1998-07-21 Tokyo Electron Limited Plasma processing method, plasma processing apparatus, and plasma generating apparatus
US5435881A (en) * 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
TW293231B (de) * 1994-04-27 1996-12-11 Aneruba Kk
ATE251798T1 (de) 1994-04-28 2003-10-15 Applied Materials Inc Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5777289A (en) 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5503676A (en) * 1994-09-19 1996-04-02 Lam Research Corporation Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
EP0710055B1 (de) 1994-10-31 1999-06-23 Applied Materials, Inc. Plasmareaktoren zur Halbleiterscheibenbehandlung
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US5591301A (en) 1994-12-22 1997-01-07 Siemens Aktiengesellschaft Plasma etching method
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6039851A (en) * 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
EP0743671A3 (de) * 1995-05-19 1997-07-16 Hitachi Ltd Verfahren und Vorrichtung für einer Plasmabearbeitungsgerät
US5696428A (en) * 1995-06-07 1997-12-09 Lsi Logic Corporation Apparatus and method using optical energy for specifying and quantitatively controlling chemically-reactive components of semiconductor processing plasma etching gas
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5874704A (en) * 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5731565A (en) 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5663076A (en) * 1995-08-08 1997-09-02 Lsi Logic Corporation Automating photolithography in the fabrication of integrated circuits
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US5662768A (en) * 1995-09-21 1997-09-02 Lsi Logic Corporation High surface area trenches for an integrated ciruit device
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
EP0777267A1 (de) 1995-11-28 1997-06-04 Applied Materials, Inc. Verfahren zum Ätzen von Oxid mit hoher Selektivität für Nitrid, geeignet für Oberflächen mit unebener Topographie
JPH09180897A (ja) * 1995-12-12 1997-07-11 Applied Materials Inc 高密度プラズマリアクタのためのガス供給装置
DE19548657C2 (de) * 1995-12-17 2003-10-09 Fraunhofer Ges Forschung Vorrichtung zur großflächigen Plasmaerzeugung
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5669977A (en) * 1995-12-22 1997-09-23 Lam Research Corporation Shape memory alloy lift pins for semiconductor processing equipment
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6042901A (en) * 1996-02-20 2000-03-28 Lam Research Corporation Method for depositing fluorine doped silicon dioxide films
DE19606375A1 (de) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen
KR970064327A (ko) * 1996-02-27 1997-09-12 모리시다 요이치 고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법
JP3720901B2 (ja) * 1996-03-04 2005-11-30 アネルバ株式会社 プラズマ処理装置及びアンテナの製造方法
WO1997033300A1 (en) * 1996-03-06 1997-09-12 Mattson Technology, Inc. Icp reactor having a conically-shaped plasma-generating section
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US5885423A (en) * 1996-03-29 1999-03-23 Lam Research Corporation Cammed nut for ceramics fastening
US5796066A (en) * 1996-03-29 1998-08-18 Lam Research Corporation Cable actuated drive assembly for vacuum chamber
JP2943691B2 (ja) * 1996-04-25 1999-08-30 日本電気株式会社 プラズマ処理装置
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
KR100489918B1 (ko) * 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
US6368469B1 (en) * 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6048798A (en) * 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
CA2207154A1 (en) * 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US6626185B2 (en) * 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6888040B1 (en) 1996-06-28 2005-05-03 Lam Research Corporation Method and apparatus for abatement of reaction products from a vacuum processing chamber
WO1998000576A1 (en) 1996-06-28 1998-01-08 Lam Research Corporation Apparatus and method for high density plasma chemical vapor deposition
US5798904A (en) * 1996-06-28 1998-08-25 Lam Research Corporation High power electrostatic chuck contact
US6209480B1 (en) 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5942855A (en) * 1996-08-28 1999-08-24 Northeastern University Monolithic miniaturized inductively coupled plasma source
US6056848A (en) 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US5993594A (en) * 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
DE69726308T2 (de) 1996-09-30 2004-08-26 Lam Research Corp., Fremont Anlage zum vermindern der polymer - abscheidung auf einem substratträger
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
JP2929275B2 (ja) * 1996-10-16 1999-08-03 株式会社アドテック 透磁コアを有する誘導結合型−平面状プラズマの発生装置
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6033585A (en) * 1996-12-20 2000-03-07 Lam Research Corporation Method and apparatus for preventing lightup of gas distribution holes
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
CN1118090C (zh) * 1997-03-17 2003-08-13 松下电器产业株式会社 等离子体处理方法及装置
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6035868A (en) * 1997-03-31 2000-03-14 Lam Research Corporation Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
US5985742A (en) * 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6475353B1 (en) 1997-05-22 2002-11-05 Sony Corporation Apparatus and method for sputter depositing dielectric films on a substrate
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US5869149A (en) * 1997-06-30 1999-02-09 Lam Research Corporation Method for preparing nitrogen surface treated fluorine doped silicon dioxide films
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6373022B2 (en) 1997-06-30 2002-04-16 Applied Materials, Inc. Plasma reactor with antenna of coil conductors of concentric helices offset along the axis of symmetry
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US5982100A (en) * 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6375810B2 (en) * 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
WO1999027579A1 (en) * 1997-11-26 1999-06-03 Applied Materials, Inc. Damage-free sculptured coating deposition
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US5994236A (en) * 1998-01-23 1999-11-30 Ogle; John Seldon Plasma source with process nonuniformity improved using ferromagnetic cores
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
JP2972707B1 (ja) 1998-02-26 1999-11-08 松下電子工業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6418353B1 (en) * 1998-04-22 2002-07-09 Lsi Logic Corporation Automating photolithography in the fabrication of integrated circuits
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6197165B1 (en) 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6204607B1 (en) 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6164241A (en) 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6660134B1 (en) 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6074953A (en) 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
JP4044218B2 (ja) * 1998-08-28 2008-02-06 松下電器産業株式会社 プラズマ処理装置
US6355183B1 (en) 1998-09-04 2002-03-12 Matsushita Electric Industrial Co., Ltd. Apparatus and method for plasma etching
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6213050B1 (en) 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6237526B1 (en) 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
KR100794539B1 (ko) * 1999-03-31 2008-01-17 램 리써치 코포레이션 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기
US6229264B1 (en) 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100742549B1 (ko) * 1999-03-31 2007-07-25 램 리써치 코포레이션 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
US6319355B1 (en) 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
EP1212787B1 (de) 1999-08-10 2014-10-08 Silicon Genesis Corporation Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6227140B1 (en) 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6408786B1 (en) 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
US6322661B1 (en) 1999-11-15 2001-11-27 Lam Research Corporation Method and apparatus for controlling the volume of a plasma
US6341574B1 (en) 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6320320B1 (en) 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6302966B1 (en) 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus
DE60038811D1 (de) * 1999-11-15 2008-06-19 Lam Res Corp Behandlungsvorrichtungen
GB2355459B (en) * 1999-11-29 2001-09-26 Isis Innovation A dominant conditional lethal genetic system
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6377437B1 (en) 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US20030010454A1 (en) * 2000-03-27 2003-01-16 Bailey Andrew D. Method and apparatus for varying a magnetic field to control a volume of a plasma
US7067034B2 (en) 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
AU2001251216A1 (en) * 2000-03-30 2001-10-15 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
US6441555B1 (en) 2000-03-31 2002-08-27 Lam Research Corporation Plasma excitation coil
US6388383B1 (en) 2000-03-31 2002-05-14 Lam Research Corporation Method of an apparatus for obtaining neutral dissociated gas atoms
US6514378B1 (en) 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6413359B1 (en) 2000-04-04 2002-07-02 K2 Keller Consulting Plasma reactor with high selectivity and reduced damage
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6531029B1 (en) 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US6410449B1 (en) 2000-08-11 2002-06-25 Applied Materials, Inc. Method of processing a workpiece using an externally excited torroidal plasma source
US6551446B1 (en) 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US6348126B1 (en) 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US6468388B1 (en) 2000-08-11 2002-10-22 Applied Materials, Inc. Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US6453842B1 (en) 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US6494986B1 (en) 2000-08-11 2002-12-17 Applied Materials, Inc. Externally excited multiple torroidal plasma source
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6790242B2 (en) 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
US6620520B2 (en) 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US7128804B2 (en) * 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6403322B1 (en) 2001-03-27 2002-06-11 Lam Research Corporation Acoustic detection of dechucking and apparatus therefor
US6527912B2 (en) 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
US20020139477A1 (en) * 2001-03-30 2002-10-03 Lam Research Corporation Plasma processing method and apparatus with control of plasma excitation power
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
US6528949B2 (en) 2001-03-30 2003-03-04 Lam Research Corporation Apparatus for elimination of plasma lighting inside a gas line in a strong RF field
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US20020170677A1 (en) * 2001-04-07 2002-11-21 Tucker Steven D. RF power process apparatus and methods
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6786175B2 (en) 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6597117B2 (en) 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
US7282183B2 (en) * 2001-12-24 2007-10-16 Agilent Technologies, Inc. Atmospheric control in reaction chambers
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7298091B2 (en) * 2002-02-01 2007-11-20 The Regents Of The University Of California Matching network for RF plasma source
US6783629B2 (en) 2002-03-11 2004-08-31 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
US6780787B2 (en) 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
JP3820188B2 (ja) 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
TW201041455A (en) 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
US20040137158A1 (en) * 2003-01-15 2004-07-15 Kools Jacques Constant Stefan Method for preparing a noble metal surface
US7163602B2 (en) * 2003-03-07 2007-01-16 Ogle John S Apparatus for generating planar plasma using concentric coils and ferromagnetic cores
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
KR100513163B1 (ko) * 2003-06-18 2005-09-08 삼성전자주식회사 Ｉｃｐ 안테나 및 이를 사용하는 플라즈마 발생장치
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
JP2005056768A (ja) * 2003-08-06 2005-03-03 Canon Inc プラズマ処理装置及び方法
JP2005064033A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体基板へのイオン注入方法
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211547A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US7109114B2 (en) * 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
JP5214251B2 (ja) 2005-02-28 2013-06-19 スルザー メテコ アーゲー 高密度低エネルギープラズマ気相エピタキシーの装置
KR20060098235A (ko) * 2005-03-11 2006-09-18 삼성전자주식회사 반도체 제조 장치
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
KR100774521B1 (ko) * 2005-07-19 2007-11-08 주식회사 디엠에스 다중 안테나 코일군이 구비된 유도결합 플라즈마 반응장치
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US7902018B2 (en) 2006-09-26 2011-03-08 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
WO2008089168A2 (en) * 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
KR101118492B1 (ko) * 2007-02-16 2012-03-12 램 리써치 코포레이션 유도 코일, 플라즈마 발생 장치 및 플라즈마 발생 방법
US20090004873A1 (en) * 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
JP5329796B2 (ja) 2007-11-14 2013-10-30 株式会社イー・エム・ディー プラズマ処理装置
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US20090151872A1 (en) * 2007-12-17 2009-06-18 Tugrul Samir Low cost high conductance chamber
WO2009085163A1 (en) * 2007-12-19 2009-07-09 Lam Research Corporation A composite showerhead electrode assembly for a plasma processing apparatus
US8449786B2 (en) * 2007-12-19 2013-05-28 Lam Research Corporation Film adhesive for semiconductor vacuum processing apparatus
US20100066252A1 (en) * 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8425977B2 (en) * 2008-09-29 2013-04-23 Applied Materials, Inc. Substrate processing chamber with off-center gas delivery funnel
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US10242843B2 (en) * 2009-02-10 2019-03-26 HELYSSEN Sàrl Apparatus for large area plasma processing
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
JP5808750B2 (ja) * 2009-11-30 2015-11-10 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 傾斜側壁を備える静電チャック
DE202010015933U1 (de) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
JP5632626B2 (ja) * 2010-03-04 2014-11-26 東京エレクトロン株式会社 自動整合装置及びプラズマ処理装置
JP5740203B2 (ja) * 2010-05-26 2015-06-24 東京エレクトロン株式会社 プラズマ処理装置及びその処理ガス供給構造
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5617817B2 (ja) 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
CN103094038B (zh) 2011-10-27 2017-01-11 松下知识产权经营株式会社 等离子体处理装置以及等离子体处理方法
KR101383291B1 (ko) * 2012-06-20 2014-04-10 주식회사 유진테크 기판 처리 장치
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10515813B2 (en) * 2013-12-10 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for etching apparatus and etching-detection method
DE102013114093A1 (de) 2013-12-16 2015-06-18 Sentech Instruments Gmbh Plasmaquelle und Verfahren zur Erzeugung eines Plasmas
JP6499835B2 (ja) * 2014-07-24 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
EP3999466A1 (de) 2019-08-07 2022-05-25 Qorvo US, Inc. Haftschutzverbesserung eines rutheniumkontakts

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
US4421898A (en) * 1981-12-21 1983-12-20 Exxon Research And Engineering Co. Sulfonated polymer and compositions thereof
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4626312A (en) * 1985-06-24 1986-12-02 The Perkin-Elmer Corporation Plasma etching system for minimizing stray electrical discharges
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
EP0379828B1 (de) * 1989-01-25 1995-09-27 International Business Machines Corporation Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung

Also Published As

Publication number Publication date
EP0413282A3 (en) 1991-07-24
DE69031820D1 (de) 1998-01-29
EP0413282A2 (de) 1991-02-20
JP3224529B2 (ja) 2001-10-29
JP3114873B2 (ja) 2000-12-04
DK0413282T3 (da) 1998-08-24
JPH0379025A (ja) 1991-04-04
ATE161357T1 (de) 1998-01-15
JP2000058297A (ja) 2000-02-25
ES2110955T3 (es) 1998-03-01
EP0413282B1 (de) 1997-12-17
KR100188076B1 (ko) 1999-06-01
US4948458A (en) 1990-08-14
KR910005733A (ko) 1991-03-30

Similar Documents

Publication Publication Date Title
DE69031820T2 (de) Verfahren und Gerät zur Erzeugung eines flachen Plasmas mittels magnetischer Kupplung
ATE89099T1 (de) Enrichtung zum herstellen eines plasmas und zur behandlung von substraten darin.
KR900014636A (ko) 시료처리 방법 및 장치
KR890003266A (ko) 플라즈마 처리방법 및 그 장치
ATE132687T1 (de) Verbesserte radiofrequenzwellen- resonanzkopplervorrichtung unter verwendung von höheren moden
JPS5779621A (en) Plasma processing device
DK0585229T3 (da) Blødætsningsmodul til clusterværktøj og tilhørende ECR-plasmagenerator
TW215968B (en) Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber and method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window
DE69332176D1 (de) Verfahren und Gerät zur Erzeugung eines elektromagnetisch gekoppelten flachen Plasmas zum Ätzen von Oxiden
ATE420454T1 (de) Gepulstes plasmabehandlungsverfahren und vorrichtung
FI890497A0 (fi) Hiukkaslähde reaktiivista ionisäde-etsaus- tai plasmakerrostuslaitteistoa varten
DE59912466D1 (de) Vorrichtung und Verfahren zur Regelung eines Rasterscanners in der Ionenstrahltherapie
DE3789163D1 (de) Vorrichtung zur Oberflächenbehandlung von Werkstücken.
KR900019154A (ko) 자기거울 전자구속수단이 있는 반도체 처리용 플래즈머 반응로 장치 및 방법
SE8902391L (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
EP1329947A4 (de) Magnetfeldgenerator für magneton-plasma und plasmaätzvorrichtung und verfahren mit dem magnetfeldgenerator
KR900014639A (ko) 마이크로파 플라스마 에칭방법 및 장치
DE60021167D1 (de) Vorrichtung zur Erzeugung von Plasma mit hoher Dichte
WO1997004476A3 (en) Method and apparatus for semiconductor etching and stripping
JPS642322A (en) Plasma etching device
DE9117087U1 (de) Vorrichtung zur lokalen Erzeugung eines Plasmas in einer Behandlungskammer mittels Mikrowellenanregung
JPH10172954A (ja) プラズマ処理装置
JP2909475B2 (ja) Ｅｃｒプラズマ発生装置
JPS6481213A (en) Plasma process apparatus
JPS6430233A (en) Plasma attachment device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition