DE69102151T2 - Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur. - Google Patents

Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur.

Info

Publication number: DE69102151T2
Authority: DE; Germany
Prior art keywords: memory device; semiconductor memory; field oxide; volatile semiconductor; oxide structure
Prior art date: 1990-01-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69102151T

Other languages

English (en)

Other versions

DE69102151D1 (de

Inventor

Katsuya Sakai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-01-31

Filing date

1991-01-31

Publication date

1994-10-27

1991-01-31 Application filed by Toshiba Corp filed Critical Toshiba Corp

1994-07-07 Publication of DE69102151D1 publication Critical patent/DE69102151D1/de

1994-10-27 Application granted granted Critical

1994-10-27 Publication of DE69102151T2 publication Critical patent/DE69102151T2/de

2011-02-01 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

DE69102151T 1990-01-31 1991-01-31 Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur. Expired - Fee Related DE69102151T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2021556A JPH088316B2 (ja)	1990-01-31	1990-01-31	紫外線消去型不揮発性半導体メモリ装置

Publications (2)

Publication Number	Publication Date
DE69102151D1 DE69102151D1 (de)	1994-07-07
DE69102151T2 true DE69102151T2 (de)	1994-10-27

Family

ID=12058285

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69102151T Expired - Fee Related DE69102151T2 (de)	1990-01-31	1991-01-31	Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur.

Country Status (5)

Country	Link
US (1)	US5255219A (de)
EP (1)	EP0440222B1 (de)
JP (1)	JPH088316B2 (de)
KR (1)	KR940010570B1 (de)
DE (1)	DE69102151T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5790452A (en) *	1996-05-02	1998-08-04	Integrated Device Technology, Inc.	Memory cell having asymmetrical source/drain pass transistors and method for operating same
KR100227625B1 (ko) *	1996-11-04	1999-11-01	김영환	반도체 소자의 테스트 패턴 제조방법
JP3742069B2 (ja)	2003-05-16	2006-02-01	沖電気工業株式会社	半導体素子の製造方法
KR100579127B1 (ko)	2003-11-19	2006-05-12	한국전자통신연구원	다중 빔 통신을 위한 위성 중계기용 스위치 제어 장치 및그 방법
KR102109462B1 (ko) *	2013-06-13	2020-05-12	에스케이하이닉스 주식회사	비휘발성 메모리 장치 및 그 제조방법
US9691776B2 (en)	2013-06-13	2017-06-27	SK Hynix Inc.	Nonvolatile memory device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4317272A (en) *	1979-10-26	1982-03-02	Texas Instruments Incorporated	High density, electrically erasable, floating gate memory cell
JPS56108259A (en) *	1980-02-01	1981-08-27	Hitachi Ltd	Semiconductor memory device
US4608751A (en) *	1980-04-07	1986-09-02	Texas Instruments Incorporated	Method of making dynamic memory array
JPS5898978A (ja) *	1981-12-08	1983-06-13	Matsushita Electronics Corp	不揮発性メモリ
JPS5922358A (ja) *	1982-07-28	1984-02-04	Toshiba Corp	半導体記憶装置
DE3482847D1 (de) *	1983-04-18	1990-09-06	Toshiba Kawasaki Kk	Halbleiterspeichervorrichtung mit einem schwebenden gate.
JPH07120716B2 (ja) *	1985-03-30	1995-12-20	株式会社東芝	半導体記憶装置
JPS62163376A (ja) *	1986-01-14	1987-07-20	Fujitsu Ltd	半導体記憶装置の製造方法
JPH0815206B2 (ja) *	1986-01-30	1996-02-14	三菱電機株式会社	半導体記憶装置
JPS63150971A (ja) *	1986-12-13	1988-06-23	Nec Corp	不揮発性メモリ
US4766473A (en) *	1986-12-29	1988-08-23	Motorola, Inc.	Single transistor cell for electrically-erasable programmable read-only memory and array thereof
US4829351A (en) *	1987-03-16	1989-05-09	Motorola, Inc.	Polysilicon pattern for a floating gate memory
IT1217403B (it) *	1988-04-12	1990-03-22	Sgs Thomson Microelectronics	Matrice di memoria a tovaglia con celle eprom sfalsate
JP2886183B2 (ja) *	1988-06-28	1999-04-26	三菱電機株式会社	フィールド分離絶縁膜の製造方法
IT1228720B (it) *	1989-03-15	1991-07-03	Sgs Thomson Microelectronics	Matrice a tovaglia di celle di memoria eprom con giunzioni sepolte, accessibili singolarmente mediante decodifica tradizionale.

1990
- 1990-01-31 JP JP2021556A patent/JPH088316B2/ja not_active Expired - Lifetime
1991
- 1991-01-30 US US07/648,131 patent/US5255219A/en not_active Expired - Lifetime
- 1991-01-31 DE DE69102151T patent/DE69102151T2/de not_active Expired - Fee Related
- 1991-01-31 EP EP91101282A patent/EP0440222B1/de not_active Expired - Lifetime
- 1991-01-31 KR KR1019910001602A patent/KR940010570B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR940010570B1 (ko)	1994-10-24
JPH03225965A (ja)	1991-10-04
EP0440222A2 (de)	1991-08-07
DE69102151D1 (de)	1994-07-07
US5255219A (en)	1993-10-19
JPH088316B2 (ja)	1996-01-29
EP0440222B1 (de)	1994-06-01
EP0440222A3 (en)	1991-11-27

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Legal Events

Date	Code	Title	Description
1995-06-29	8364	No opposition during term of opposition
2000-03-09	8339	Ceased/non-payment of the annual fee