DE69111963T2 - Dünnfilm-Transistor und Verfahren zur Herstellung. - Google Patents
Dünnfilm-Transistor und Verfahren zur Herstellung.Info
- Publication number
- DE69111963T2 DE69111963T2 DE69111963T DE69111963T DE69111963T2 DE 69111963 T2 DE69111963 T2 DE 69111963T2 DE 69111963 T DE69111963 T DE 69111963T DE 69111963 T DE69111963 T DE 69111963T DE 69111963 T2 DE69111963 T2 DE 69111963T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2271727A JP2940880B2 (ja) | 1990-10-09 | 1990-10-09 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69111963D1 DE69111963D1 (de) | 1995-09-14 |
DE69111963T2 true DE69111963T2 (de) | 1996-02-01 |
Family
ID=17504002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69111963T Expired - Fee Related DE69111963T2 (de) | 1990-10-09 | 1991-10-03 | Dünnfilm-Transistor und Verfahren zur Herstellung. |
Country Status (4)
Country | Link |
---|---|
US (2) | US5341028A (de) |
EP (1) | EP0480635B1 (de) |
JP (1) | JP2940880B2 (de) |
DE (1) | DE69111963T2 (de) |
Families Citing this family (89)
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JP2940880B2 (ja) * | 1990-10-09 | 1999-08-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
TW232751B (en) | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JPH06140631A (ja) * | 1992-10-28 | 1994-05-20 | Ryoden Semiconductor Syst Eng Kk | 電界効果型薄膜トランジスタおよびその製造方法 |
JP3486426B2 (ja) * | 1993-01-18 | 2004-01-13 | キヤノン株式会社 | 半導体装置及び液晶表示装置 |
WO1995003629A1 (fr) | 1993-07-26 | 1995-02-02 | Seiko Epson Corporation | Dispositif semi-conducteur a film mince, sa fabrication et son systeme d'affichage |
TW297142B (de) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
US5719065A (en) | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
JPH07135324A (ja) * | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路 |
JPH07183526A (ja) * | 1993-12-22 | 1995-07-21 | Toshiba Corp | 薄膜半導体装置及びその製造方法 |
JP3514500B2 (ja) * | 1994-01-28 | 2004-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
JP3253808B2 (ja) * | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6906383B1 (en) | 1994-07-14 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacture thereof |
US6773971B1 (en) * | 1994-07-14 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions |
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DE69534919T2 (de) * | 1995-10-30 | 2007-01-25 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe |
US5567631A (en) * | 1995-11-13 | 1996-10-22 | Taiwan Semiconductor Manufacturing Company | Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology |
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TW374196B (en) * | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
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JP5415001B2 (ja) * | 2007-02-22 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5512930B2 (ja) | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2011216894A (ja) * | 2011-05-31 | 2011-10-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US9929044B2 (en) * | 2014-01-30 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP6275559B2 (ja) | 2014-06-13 | 2018-02-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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JP2018157206A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
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JPS60186053A (ja) * | 1984-03-06 | 1985-09-21 | Seiko Epson Corp | 薄膜相補型mos回路 |
JPS61137367A (ja) * | 1984-12-10 | 1986-06-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPS61270870A (ja) * | 1985-05-25 | 1986-12-01 | Mitsubishi Electric Corp | 半導体装置 |
JPS6232653A (ja) * | 1985-08-05 | 1987-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜トランジスタの製造方法 |
JPS62143473A (ja) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | 半導体装置 |
JPS62296563A (ja) * | 1986-06-17 | 1987-12-23 | Matsushita Electronics Corp | 絶縁ゲ−ト型トランジスタおよびその製造方法 |
JPS6312168A (ja) * | 1986-07-03 | 1988-01-19 | Oki Electric Ind Co Ltd | Lddmis型電界効果トランジスタ |
JPS6384064A (ja) * | 1986-09-26 | 1988-04-14 | Seiko Epson Corp | 半導体装置 |
JPS63292679A (ja) * | 1987-05-25 | 1988-11-29 | Mitsubishi Electric Corp | Mosトランジスタの製造方法 |
JPS6427272A (en) * | 1987-07-23 | 1989-01-30 | Agency Ind Science Techn | Semiconductor device |
JPH01291464A (ja) * | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | Mis電界効果半導体装置 |
JP2510710B2 (ja) * | 1988-12-13 | 1996-06-26 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたmos型電界効果トランジスタ |
JP2551127B2 (ja) * | 1989-01-07 | 1996-11-06 | 三菱電機株式会社 | Mis型半導体装置およびその製造方法 |
JPH077773B2 (ja) * | 1989-03-01 | 1995-01-30 | 工業技術院長 | 半導体装置の製造方法 |
JP2940880B2 (ja) * | 1990-10-09 | 1999-08-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
-
1990
- 1990-10-09 JP JP2271727A patent/JP2940880B2/ja not_active Expired - Lifetime
-
1991
- 1991-10-03 US US07/770,041 patent/US5341028A/en not_active Expired - Lifetime
- 1991-10-03 DE DE69111963T patent/DE69111963T2/de not_active Expired - Fee Related
- 1991-10-03 EP EP91309095A patent/EP0480635B1/de not_active Expired - Lifetime
-
1994
- 1994-06-30 US US08/268,877 patent/US5444282A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5341028A (en) | 1994-08-23 |
EP0480635B1 (de) | 1995-08-09 |
JPH04147629A (ja) | 1992-05-21 |
JP2940880B2 (ja) | 1999-08-25 |
US5444282A (en) | 1995-08-22 |
DE69111963D1 (de) | 1995-09-14 |
EP0480635A1 (de) | 1992-04-15 |
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