DE69120745T2 - Verfahren zur Züchtung eines dünnen kristallinen Films - Google Patents

Verfahren zur Züchtung eines dünnen kristallinen Films

Info

Publication number
DE69120745T2
DE69120745T2 DE69120745T DE69120745T DE69120745T2 DE 69120745 T2 DE69120745 T2 DE 69120745T2 DE 69120745 T DE69120745 T DE 69120745T DE 69120745 T DE69120745 T DE 69120745T DE 69120745 T2 DE69120745 T2 DE 69120745T2
Authority
DE
Germany
Prior art keywords
growing
crystalline film
thin crystalline
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120745T
Other languages
English (en)
Other versions
DE69120745D1 (de
Inventor
Hideya Kumomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69120745D1 publication Critical patent/DE69120745D1/de
Publication of DE69120745T2 publication Critical patent/DE69120745T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
DE69120745T 1990-08-08 1991-08-07 Verfahren zur Züchtung eines dünnen kristallinen Films Expired - Fee Related DE69120745T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2208174A JPH0492413A (ja) 1990-08-08 1990-08-08 結晶薄膜の成長方法

Publications (2)

Publication Number Publication Date
DE69120745D1 DE69120745D1 (de) 1996-08-14
DE69120745T2 true DE69120745T2 (de) 1997-01-23

Family

ID=16551888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120745T Expired - Fee Related DE69120745T2 (de) 1990-08-08 1991-08-07 Verfahren zur Züchtung eines dünnen kristallinen Films

Country Status (5)

Country Link
US (1) US5318661A (de)
EP (1) EP0472970B1 (de)
JP (1) JPH0492413A (de)
CA (1) CA2048517C (de)
DE (1) DE69120745T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
JPH06163954A (ja) * 1992-11-20 1994-06-10 Sanyo Electric Co Ltd 結晶系シリコン薄膜の形成方法及びこの膜を用いた光起電力装置
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
JP3240719B2 (ja) * 1992-12-10 2001-12-25 ソニー株式会社 半導体薄膜結晶の成長方法
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
US6090646A (en) 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JP2814049B2 (ja) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
DE19605245A1 (de) * 1996-02-13 1997-08-14 Siemens Ag Verfahren zur Erzeugung von Kristallisationszentren auf der Oberfläche eines Substrats
US6383899B1 (en) * 1996-04-05 2002-05-07 Sharp Laboratories Of America, Inc. Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation
US6359325B1 (en) * 2000-03-14 2002-03-19 International Business Machines Corporation Method of forming nano-scale structures from polycrystalline materials and nano-scale structures formed thereby
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
US7473621B2 (en) * 2002-11-27 2009-01-06 Canon Kabushiki Kaisha Producing method for crystalline thin film
CN103469292B (zh) * 2013-08-31 2015-11-18 江西赛维Ldk太阳能高科技有限公司 一种多晶硅片及其制备方法
US9583187B2 (en) 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
JPS5856406A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体膜の製造方法
JPH0240039B2 (ja) * 1985-05-14 1990-09-10 Nippon Electric Co Handotaisochokibannoseizohoho
JPS62167295A (ja) * 1986-01-16 1987-07-23 Nec Corp シリコン単結晶膜の製造方法
JP2595525B2 (ja) * 1987-04-10 1997-04-02 ソニー株式会社 半導体薄膜の形成方法
AU623861B2 (en) * 1987-08-08 1992-05-28 Canon Kabushiki Kaisha Crystal article, method for producing the same and semiconductor device utilizing the same
US4904611A (en) * 1987-09-18 1990-02-27 Xerox Corporation Formation of large grain polycrystalline films
JPH01245509A (ja) * 1988-03-28 1989-09-29 Toshiba Corp 半導体結晶層の形成方法
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法

Also Published As

Publication number Publication date
EP0472970A3 (en) 1992-04-08
US5318661A (en) 1994-06-07
EP0472970B1 (de) 1996-07-10
JPH0492413A (ja) 1992-03-25
EP0472970A2 (de) 1992-03-04
CA2048517C (en) 1998-10-27
DE69120745D1 (de) 1996-08-14
CA2048517A1 (en) 1992-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee