DE69125535D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69125535D1 DE69125535D1 DE69125535T DE69125535T DE69125535D1 DE 69125535 D1 DE69125535 D1 DE 69125535D1 DE 69125535 T DE69125535 T DE 69125535T DE 69125535 T DE69125535 T DE 69125535T DE 69125535 D1 DE69125535 D1 DE 69125535D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18842890A JP2586187B2 (ja) | 1990-07-16 | 1990-07-16 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69125535D1 true DE69125535D1 (de) | 1997-05-15 |
DE69125535T2 DE69125535T2 (de) | 1997-07-17 |
Family
ID=16223504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69125535T Expired - Fee Related DE69125535T2 (de) | 1990-07-16 | 1991-07-15 | Halbleiterspeicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5301144A (de) |
EP (1) | EP0467607B1 (de) |
JP (1) | JP2586187B2 (de) |
DE (1) | DE69125535T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0495298A (ja) * | 1990-08-10 | 1992-03-27 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
US5566127A (en) * | 1992-01-15 | 1996-10-15 | Motorola, Inc. | Method for building a compiled static RAM |
KR0158112B1 (ko) * | 1995-04-25 | 1999-02-01 | 김광호 | 다수개의 뱅크들을 가지는 반도체 메모리 장치 |
KR0157342B1 (ko) * | 1995-06-09 | 1998-12-01 | 김광호 | 불휘발성 반도체 메모리의 전압 센싱 방법 |
KR100228424B1 (ko) * | 1996-06-29 | 1999-11-01 | 김영환 | 반도체 메모리 장치의 엑스 디코더 회로 |
JP2978794B2 (ja) * | 1996-11-08 | 1999-11-15 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路 |
JP3905979B2 (ja) * | 1998-06-03 | 2007-04-18 | 株式会社東芝 | 不揮発性半導体メモリ |
US20040001355A1 (en) * | 2002-06-27 | 2004-01-01 | Matrix Semiconductor, Inc. | Low-cost, serially-connected, multi-level mask-programmable read-only memory |
US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
US7005350B2 (en) * | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
US7505321B2 (en) | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US6822903B2 (en) * | 2003-03-31 | 2004-11-23 | Matrix Semiconductor, Inc. | Apparatus and method for disturb-free programming of passive element memory cells |
US7233024B2 (en) * | 2003-03-31 | 2007-06-19 | Sandisk 3D Llc | Three-dimensional memory device incorporating segmented bit line memory array |
US6879505B2 (en) * | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
US7023739B2 (en) * | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
US20050128807A1 (en) * | 2003-12-05 | 2005-06-16 | En-Hsing Chen | Nand memory array incorporating multiple series selection devices and method for operation of same |
US7221588B2 (en) * | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
US7054219B1 (en) | 2005-03-31 | 2006-05-30 | Matrix Semiconductor, Inc. | Transistor layout configuration for tight-pitched memory array lines |
US7142471B2 (en) * | 2005-03-31 | 2006-11-28 | Sandisk 3D Llc | Method and apparatus for incorporating block redundancy in a memory array |
US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
JP4895545B2 (ja) * | 2005-07-22 | 2012-03-14 | パナソニック株式会社 | 監視カメラ装置及び監視カメラシステム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4467453A (en) * | 1979-09-04 | 1984-08-21 | Texas Instruments Incorporated | Electrically programmable floating gate semiconductor memory device |
US4489400A (en) * | 1982-03-01 | 1984-12-18 | Texas Instruments Incorporated | Serially banked read only memory |
US4727515A (en) * | 1983-12-14 | 1988-02-23 | General Electric Co. | High density programmable memory array |
US5008856A (en) * | 1987-06-29 | 1991-04-16 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
JP2685770B2 (ja) * | 1987-12-28 | 1997-12-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US4888735A (en) * | 1987-12-30 | 1989-12-19 | Elite Semiconductor & Systems Int'l., Inc. | ROM cell and array configuration |
US4855955A (en) * | 1988-04-08 | 1989-08-08 | Seeq Technology, Inc. | Three transistor high endurance eeprom cell |
US5021689A (en) * | 1989-01-19 | 1991-06-04 | National Semiconductor Corp. | Multiple page programmable logic architecture |
US4996669A (en) * | 1989-03-08 | 1991-02-26 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
US5075890A (en) * | 1989-05-02 | 1991-12-24 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with nand cell |
JP2862584B2 (ja) * | 1989-08-31 | 1999-03-03 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
-
1990
- 1990-07-16 JP JP18842890A patent/JP2586187B2/ja not_active Expired - Fee Related
-
1991
- 1991-07-15 DE DE69125535T patent/DE69125535T2/de not_active Expired - Fee Related
- 1991-07-15 EP EP91306365A patent/EP0467607B1/de not_active Expired - Lifetime
- 1991-07-16 US US07/730,652 patent/US5301144A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0467607B1 (de) | 1997-04-09 |
EP0467607A2 (de) | 1992-01-22 |
US5301144A (en) | 1994-04-05 |
JPH0474397A (ja) | 1992-03-09 |
EP0467607A3 (en) | 1993-04-07 |
JP2586187B2 (ja) | 1997-02-26 |
DE69125535T2 (de) | 1997-07-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |