DE69128144D1 - Kaltkathoden-feldemissionsvorrichtung mit integriertem emitter-belastungswiderstand - Google Patents
Kaltkathoden-feldemissionsvorrichtung mit integriertem emitter-belastungswiderstandInfo
- Publication number
- DE69128144D1 DE69128144D1 DE69128144T DE69128144T DE69128144D1 DE 69128144 D1 DE69128144 D1 DE 69128144D1 DE 69128144 T DE69128144 T DE 69128144T DE 69128144 T DE69128144 T DE 69128144T DE 69128144 D1 DE69128144 D1 DE 69128144D1
- Authority
- DE
- Germany
- Prior art keywords
- field emission
- cold cathode
- emission device
- cathode field
- load resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/44—One or more circuit elements structurally associated with the tube or lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07477695 US5142184B1 (en) | 1990-02-09 | 1990-02-09 | Cold cathode field emission device with integral emitter ballasting |
PCT/US1991/000592 WO1991012624A1 (en) | 1990-02-09 | 1991-01-18 | Cold cathode field emission device with integral emitter ballasting |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128144D1 true DE69128144D1 (de) | 1997-12-11 |
DE69128144T2 DE69128144T2 (de) | 1998-04-09 |
Family
ID=23896966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128144T Expired - Fee Related DE69128144T2 (de) | 1990-02-09 | 1991-01-18 | Kaltkathoden-feldemissionsvorrichtung mit integriertem emitter-belastungswiderstand |
Country Status (10)
Country | Link |
---|---|
US (1) | US5142184B1 (de) |
EP (1) | EP0514474B1 (de) |
JP (1) | JP2711591B2 (de) |
CN (1) | CN1021608C (de) |
AT (1) | ATE160053T1 (de) |
DE (1) | DE69128144T2 (de) |
DK (1) | DK0514474T3 (de) |
ES (1) | ES2108044T3 (de) |
RU (1) | RU2121192C1 (de) |
WO (1) | WO1991012624A1 (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247223A (en) * | 1990-06-30 | 1993-09-21 | Sony Corporation | Quantum interference semiconductor device |
JPH0547296A (ja) * | 1991-08-14 | 1993-02-26 | Sharp Corp | 電界放出型電子源及びその製造方法 |
US5536193A (en) * | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
US5371431A (en) * | 1992-03-04 | 1994-12-06 | Mcnc | Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions |
US5763997A (en) | 1992-03-16 | 1998-06-09 | Si Diamond Technology, Inc. | Field emission display device |
US5679043A (en) | 1992-03-16 | 1997-10-21 | Microelectronics And Computer Technology Corporation | Method of making a field emitter |
US6127773A (en) | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
US5543684A (en) | 1992-03-16 | 1996-08-06 | Microelectronics And Computer Technology Corporation | Flat panel display based on diamond thin films |
US5675216A (en) | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US5449970A (en) | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5600200A (en) | 1992-03-16 | 1997-02-04 | Microelectronics And Computer Technology Corporation | Wire-mesh cathode |
US5319233A (en) * | 1992-05-13 | 1994-06-07 | Motorola, Inc. | Field emission device employing a layer of single-crystal silicon |
KR100284830B1 (ko) * | 1992-12-23 | 2001-04-02 | 씨.알. 클라인 쥬니어 | 평면의 필드 방사 음극을 사용하는 3극 진공관 구조 평판 디스플레이 |
JPH08510588A (ja) * | 1993-01-19 | 1996-11-05 | ダニロビッチ カルポフ,レオニド | 電界放出素子 |
JPH08510858A (ja) * | 1993-06-02 | 1996-11-12 | マイクロイレクトラニクス、アンド、カムピュータ、テクナラジ、コーパレイシャン | 非晶質ダイヤモンド・フイルムの平坦な電界放出陰極 |
US7025892B1 (en) | 1993-09-08 | 2006-04-11 | Candescent Technologies Corporation | Method for creating gated filament structures for field emission displays |
US5559389A (en) * | 1993-09-08 | 1996-09-24 | Silicon Video Corporation | Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals |
US5564959A (en) * | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
JP2699827B2 (ja) * | 1993-09-27 | 1998-01-19 | 双葉電子工業株式会社 | 電界放出カソード素子 |
US5466982A (en) * | 1993-10-18 | 1995-11-14 | Honeywell Inc. | Comb toothed field emitter structure having resistive and capacitive coupled input |
JP2743794B2 (ja) * | 1993-10-25 | 1998-04-22 | 双葉電子工業株式会社 | 電界放出カソード及び電界放出カソードの製造方法 |
AU1043895A (en) | 1993-11-04 | 1995-05-23 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
US5786659A (en) * | 1993-11-29 | 1998-07-28 | Futaba Denshi Kogyo K.K. | Field emission type electron source |
JP2809078B2 (ja) * | 1993-12-28 | 1998-10-08 | 日本電気株式会社 | 電界放出冷陰極およびその製造方法 |
FR2717304B1 (fr) * | 1994-03-09 | 1996-04-05 | Commissariat Energie Atomique | Source d'électrons à cathodes émissives à micropointes. |
US5550426A (en) * | 1994-06-30 | 1996-08-27 | Motorola | Field emission device |
FR2722913B1 (fr) * | 1994-07-21 | 1996-10-11 | Pixel Int Sa | Cathode a micropointes pour ecran plat |
US5698933A (en) * | 1994-07-25 | 1997-12-16 | Motorola, Inc. | Field emission device current control apparatus and method |
EP0696042B1 (de) | 1994-08-01 | 1999-12-01 | Motorola, Inc. | Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung |
US6204834B1 (en) | 1994-08-17 | 2001-03-20 | Si Diamond Technology, Inc. | System and method for achieving uniform screen brightness within a matrix display |
EP0700063A1 (de) * | 1994-08-31 | 1996-03-06 | International Business Machines Corporation | Aufbau und Verfahren zur Herstellung einer Feldemissionsanordnung |
US5531880A (en) * | 1994-09-13 | 1996-07-02 | Microelectronics And Computer Technology Corporation | Method for producing thin, uniform powder phosphor for display screens |
US5496200A (en) * | 1994-09-14 | 1996-03-05 | United Microelectronics Corporation | Sealed vacuum electronic devices |
US6417605B1 (en) * | 1994-09-16 | 2002-07-09 | Micron Technology, Inc. | Method of preventing junction leakage in field emission devices |
US5528108A (en) | 1994-09-22 | 1996-06-18 | Motorola | Field emission device arc-suppressor |
US5528098A (en) | 1994-10-06 | 1996-06-18 | Motorola | Redundant conductor electron source |
US5557159A (en) * | 1994-11-18 | 1996-09-17 | Texas Instruments Incorporated | Field emission microtip clusters adjacent stripe conductors |
US5541466A (en) * | 1994-11-18 | 1996-07-30 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
US5536993A (en) * | 1994-11-18 | 1996-07-16 | Texas Instruments Incorporated | Clustered field emission microtips adjacent stripe conductors |
US5569975A (en) * | 1994-11-18 | 1996-10-29 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips |
US5644187A (en) * | 1994-11-25 | 1997-07-01 | Motorola | Collimating extraction grid conductor and method |
US5578896A (en) * | 1995-04-10 | 1996-11-26 | Industrial Technology Research Institute | Cold cathode field emission display and method for forming it |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
US6296740B1 (en) | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
US5591352A (en) * | 1995-04-27 | 1997-01-07 | Industrial Technology Research Institute | High resolution cold cathode field emission display method |
US5552677A (en) * | 1995-05-01 | 1996-09-03 | Motorola | Method and control circuit precharging a plurality of columns prior to enabling a row of a display |
US5631518A (en) * | 1995-05-02 | 1997-05-20 | Motorola | Electron source having short-avoiding extraction electrode and method of making same |
US5691600A (en) * | 1995-06-08 | 1997-11-25 | Motorola | Edge electron emitters for an array of FEDS |
US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
AU6626096A (en) * | 1995-08-04 | 1997-03-05 | Printable Field Emitters Limited | Field electron emission materials and devices |
US6192324B1 (en) | 1995-08-14 | 2001-02-20 | General Motors Corporation | On-board diagnosis of emissions from catalytic converters |
US5688158A (en) * | 1995-08-24 | 1997-11-18 | Fed Corporation | Planarizing process for field emitter displays and other electron source applications |
US5844351A (en) * | 1995-08-24 | 1998-12-01 | Fed Corporation | Field emitter device, and veil process for THR fabrication thereof |
US5828288A (en) * | 1995-08-24 | 1998-10-27 | Fed Corporation | Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications |
US5731660A (en) | 1995-12-18 | 1998-03-24 | Motorola, Inc. | Flat panel display spacer structure |
US6680489B1 (en) | 1995-12-20 | 2004-01-20 | Advanced Technology Materials, Inc. | Amorphous silicon carbide thin film coating |
US6031250A (en) | 1995-12-20 | 2000-02-29 | Advanced Technology Materials, Inc. | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
US5633561A (en) * | 1996-03-28 | 1997-05-27 | Motorola | Conductor array for a flat panel display |
JP2970539B2 (ja) * | 1996-06-27 | 1999-11-02 | 日本電気株式会社 | 電界放出型陰極およびこれを用いた陰極線管 |
JP3026484B2 (ja) * | 1996-08-23 | 2000-03-27 | 日本電気株式会社 | 電界放出型冷陰極 |
US6013986A (en) * | 1997-06-30 | 2000-01-11 | Candescent Technologies Corporation | Electron-emitting device having multi-layer resistor |
US6144144A (en) * | 1997-10-31 | 2000-11-07 | Candescent Technologies Corporation | Patterned resistor suitable for electron-emitting device |
US6710538B1 (en) * | 1998-08-26 | 2004-03-23 | Micron Technology, Inc. | Field emission display having reduced power requirements and method |
US6420826B1 (en) * | 2000-01-03 | 2002-07-16 | The Regents Of The University Of California | Flat panel display using Ti-Cr-Al-O thin film |
US6611093B1 (en) | 2000-09-19 | 2003-08-26 | Display Research Laboratories, Inc. | Field emission display with transparent cathode |
US6835947B2 (en) * | 2002-01-31 | 2004-12-28 | Hewlett-Packard Development Company, L.P. | Emitter and method of making |
US6703252B2 (en) * | 2002-01-31 | 2004-03-09 | Hewlett-Packard Development Company, L.P. | Method of manufacturing an emitter |
US6852554B2 (en) | 2002-02-27 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Emission layer formed by rapid thermal formation process |
US6787792B2 (en) * | 2002-04-18 | 2004-09-07 | Hewlett-Packard Development Company, L.P. | Emitter with filled zeolite emission layer |
US7170223B2 (en) | 2002-07-17 | 2007-01-30 | Hewlett-Packard Development Company, L.P. | Emitter with dielectric layer having implanted conducting centers |
US8814622B1 (en) * | 2011-11-17 | 2014-08-26 | Sandia Corporation | Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode |
US9711392B2 (en) * | 2012-07-25 | 2017-07-18 | Infineon Technologies Ag | Field emission devices and methods of making thereof |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3789471A (en) * | 1970-02-06 | 1974-02-05 | Stanford Research Inst | Field emission cathode structures, devices utilizing such structures, and methods of producing such structures |
US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
US3812559A (en) * | 1970-07-13 | 1974-05-28 | Stanford Research Inst | Methods of producing field ionizer and field emission cathode structures |
US3894332A (en) * | 1972-02-11 | 1975-07-15 | Westinghouse Electric Corp | Solid state radiation sensitive field electron emitter and methods of fabrication thereof |
JPS5325632B2 (de) * | 1973-03-22 | 1978-07-27 | ||
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
JPS5436828B2 (de) * | 1974-08-16 | 1979-11-12 | ||
US3921022A (en) * | 1974-09-03 | 1975-11-18 | Rca Corp | Field emitting device and method of making same |
US4178531A (en) * | 1977-06-15 | 1979-12-11 | Rca Corporation | CRT with field-emission cathode |
SU855782A1 (ru) * | 1977-06-28 | 1981-08-15 | Предприятие П/Я Г-4468 | Эмиттер электронов |
JPS56130960A (en) * | 1980-03-17 | 1981-10-14 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit |
US4307507A (en) * | 1980-09-10 | 1981-12-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of manufacturing a field-emission cathode structure |
US4578614A (en) * | 1982-07-23 | 1986-03-25 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-fast field emitter array vacuum integrated circuit switching device |
US4513308A (en) * | 1982-09-23 | 1985-04-23 | The United States Of America As Represented By The Secretary Of The Navy | p-n Junction controlled field emitter array cathode |
FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
GB8621600D0 (en) * | 1986-09-08 | 1987-03-18 | Gen Electric Co Plc | Vacuum devices |
FR2604823B1 (fr) * | 1986-10-02 | 1995-04-07 | Etude Surfaces Lab | Dispositif emetteur d'electrons et son application notamment a la realisation d'ecrans plats de television |
US4685996A (en) * | 1986-10-14 | 1987-08-11 | Busta Heinz H | Method of making micromachined refractory metal field emitters |
US4721885A (en) * | 1987-02-11 | 1988-01-26 | Sri International | Very high speed integrated microelectronic tubes |
JP2654013B2 (ja) * | 1987-05-06 | 1997-09-17 | キヤノン株式会社 | 電子放出素子およびその製造方法 |
GB2204991B (en) * | 1987-05-18 | 1991-10-02 | Gen Electric Plc | Vacuum electronic devices |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US4901028A (en) * | 1988-03-22 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array integrated distributed amplifiers |
US4874981A (en) * | 1988-05-10 | 1989-10-17 | Sri International | Automatically focusing field emission electrode |
FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
-
1990
- 1990-02-09 US US07477695 patent/US5142184B1/en not_active Expired - Lifetime
-
1991
- 1991-01-18 RU SU5053033A patent/RU2121192C1/ru active
- 1991-01-18 AT AT91904620T patent/ATE160053T1/de not_active IP Right Cessation
- 1991-01-18 JP JP3504871A patent/JP2711591B2/ja not_active Expired - Fee Related
- 1991-01-18 DK DK91904620T patent/DK0514474T3/da active
- 1991-01-18 DE DE69128144T patent/DE69128144T2/de not_active Expired - Fee Related
- 1991-01-18 WO PCT/US1991/000592 patent/WO1991012624A1/en active IP Right Grant
- 1991-01-18 ES ES91904620T patent/ES2108044T3/es not_active Expired - Lifetime
- 1991-01-18 EP EP91904620A patent/EP0514474B1/de not_active Expired - Lifetime
- 1991-02-08 CN CN91100961A patent/CN1021608C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1021608C (zh) | 1993-07-14 |
ES2108044T3 (es) | 1997-12-16 |
CN1056377A (zh) | 1991-11-20 |
WO1991012624A1 (en) | 1991-08-22 |
JP2711591B2 (ja) | 1998-02-10 |
DE69128144T2 (de) | 1998-04-09 |
RU2121192C1 (ru) | 1998-10-27 |
ATE160053T1 (de) | 1997-11-15 |
US5142184B1 (en) | 1995-11-21 |
EP0514474A1 (de) | 1992-11-25 |
JPH05504022A (ja) | 1993-06-24 |
US5142184A (en) | 1992-08-25 |
DK0514474T3 (da) | 1998-07-27 |
EP0514474B1 (de) | 1997-11-05 |
EP0514474A4 (en) | 1993-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |