DE69128909D1 - EPROM-Feld - Google Patents
EPROM-FeldInfo
- Publication number
- DE69128909D1 DE69128909D1 DE69128909T DE69128909T DE69128909D1 DE 69128909 D1 DE69128909 D1 DE 69128909D1 DE 69128909 T DE69128909 T DE 69128909T DE 69128909 T DE69128909 T DE 69128909T DE 69128909 D1 DE69128909 D1 DE 69128909D1
- Authority
- DE
- Germany
- Prior art keywords
- eprom
- field
- eprom field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61234690A | 1990-11-13 | 1990-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69128909D1 true DE69128909D1 (de) | 1998-03-19 |
Family
ID=24452772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69128909T Expired - Lifetime DE69128909D1 (de) | 1990-11-13 | 1991-11-12 | EPROM-Feld |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5862076A (de) |
| EP (1) | EP0486249B1 (de) |
| JP (1) | JP3002309B2 (de) |
| DE (1) | DE69128909D1 (de) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0851426A3 (de) | 1996-12-27 | 1999-11-24 | STMicroelectronics S.r.l. | Speicherblock zur Realisierung von Halbleiterspeicheranordnungen und entsprechendes Herstellungsverfahren |
| US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6011710A (en) * | 1997-10-30 | 2000-01-04 | Hewlett-Packard Company | Capacitance reducing memory system, device and method |
| US5963465A (en) * | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
| US6633496B2 (en) | 1997-12-12 | 2003-10-14 | Saifun Semiconductors Ltd. | Symmetric architecture for memory cells having widely spread metal bit lines |
| US6430077B1 (en) | 1997-12-12 | 2002-08-06 | Saifun Semiconductors Ltd. | Method for regulating read voltage level at the drain of a cell in a symmetric array |
| US6633499B1 (en) | 1997-12-12 | 2003-10-14 | Saifun Semiconductors Ltd. | Method for reducing voltage drops in symmetric array architectures |
| US6396741B1 (en) * | 2000-05-04 | 2002-05-28 | Saifun Semiconductors Ltd. | Programming of nonvolatile memory cells |
| US6928001B2 (en) * | 2000-12-07 | 2005-08-09 | Saifun Semiconductors Ltd. | Programming and erasing methods for a non-volatile memory cell |
| US6614692B2 (en) * | 2001-01-18 | 2003-09-02 | Saifun Semiconductors Ltd. | EEPROM array and method for operation thereof |
| US6677805B2 (en) | 2001-04-05 | 2004-01-13 | Saifun Semiconductors Ltd. | Charge pump stage with body effect minimization |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US6636440B2 (en) | 2001-04-25 | 2003-10-21 | Saifun Semiconductors Ltd. | Method for operation of an EEPROM array, including refresh thereof |
| KR100416599B1 (ko) * | 2001-05-31 | 2004-02-05 | 삼성전자주식회사 | 집적도와 독출동작 속도를 향상시키고 전력소모를감소시킬 수 있는 메탈 프로그래머블 롬의 메모리셀 구조 |
| US6480422B1 (en) | 2001-06-14 | 2002-11-12 | Multi Level Memory Technology | Contactless flash memory with shared buried diffusion bit line architecture |
| US6643181B2 (en) | 2001-10-24 | 2003-11-04 | Saifun Semiconductors Ltd. | Method for erasing a memory cell |
| US7098107B2 (en) * | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
| US6885585B2 (en) * | 2001-12-20 | 2005-04-26 | Saifun Semiconductors Ltd. | NROM NOR array |
| ATE448549T1 (de) * | 2002-01-11 | 2009-11-15 | Texas Instruments Inc | Räumlicher lichtmodulator mit ladungspumpen- pixelzelle |
| US6975536B2 (en) * | 2002-01-31 | 2005-12-13 | Saifun Semiconductors Ltd. | Mass storage array and methods for operation thereof |
| US6700818B2 (en) * | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US6914820B1 (en) | 2002-05-06 | 2005-07-05 | Multi Level Memory Technology | Erasing storage nodes in a bi-directional nonvolatile memory cell |
| US7221591B1 (en) * | 2002-05-06 | 2007-05-22 | Samsung Electronics Co., Ltd. | Fabricating bi-directional nonvolatile memory cells |
| US6747896B2 (en) | 2002-05-06 | 2004-06-08 | Multi Level Memory Technology | Bi-directional floating gate nonvolatile memory |
| US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US6826107B2 (en) * | 2002-08-01 | 2004-11-30 | Saifun Semiconductors Ltd. | High voltage insertion in flash memory cards |
| US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
| US7178004B2 (en) * | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| US7123532B2 (en) * | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
| US7095655B2 (en) * | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
| US20060036803A1 (en) * | 2004-08-16 | 2006-02-16 | Mori Edan | Non-volatile memory device controlled by a micro-controller |
| US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
| US20060146624A1 (en) * | 2004-12-02 | 2006-07-06 | Saifun Semiconductors, Ltd. | Current folding sense amplifier |
| EP1684307A1 (de) * | 2005-01-19 | 2006-07-26 | Saifun Semiconductors Ltd. | Verfahren, Schaltung und System zum Löschen einer oder mehrerer nichtflüchtiger Speicherzellen |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| JP2007027760A (ja) * | 2005-07-18 | 2007-02-01 | Saifun Semiconductors Ltd | 高密度不揮発性メモリアレイ及び製造方法 |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US20070096199A1 (en) * | 2005-09-08 | 2007-05-03 | Eli Lusky | Method of manufacturing symmetric arrays |
| US20070120180A1 (en) * | 2005-11-25 | 2007-05-31 | Boaz Eitan | Transition areas for dense memory arrays |
| US7352627B2 (en) * | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
| US7808818B2 (en) * | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US20070173017A1 (en) * | 2006-01-20 | 2007-07-26 | Saifun Semiconductors, Ltd. | Advanced non-volatile memory array and method of fabrication thereof |
| US7760554B2 (en) * | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7692961B2 (en) * | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US8253452B2 (en) * | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US20070255889A1 (en) * | 2006-03-22 | 2007-11-01 | Yoav Yogev | Non-volatile memory device and method of operating the device |
| US7701779B2 (en) * | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| US7605579B2 (en) * | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
| US7965551B2 (en) * | 2007-02-07 | 2011-06-21 | Macronix International Co., Ltd. | Method for metal bit line arrangement |
| US20080239599A1 (en) * | 2007-04-01 | 2008-10-02 | Yehuda Yizraeli | Clamping Voltage Events Such As ESD |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US7590001B2 (en) | 2007-12-18 | 2009-09-15 | Saifun Semiconductors Ltd. | Flash memory with optimized write sector spares |
| JP2010021492A (ja) | 2008-07-14 | 2010-01-28 | Toshiba Corp | 不揮発性半導体記憶装置およびその制御方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4258466A (en) * | 1978-11-02 | 1981-03-31 | Texas Instruments Incorporated | High density electrically programmable ROM |
| US4377818A (en) * | 1978-11-02 | 1983-03-22 | Texas Instruments Incorporated | High density electrically programmable ROM |
| US4281387A (en) * | 1979-05-21 | 1981-07-28 | American Home Products Corp. | Automatic chemical analysis apparatus and method |
| US4267632A (en) * | 1979-10-19 | 1981-05-19 | Intel Corporation | Process for fabricating a high density electrically programmable memory array |
| US4281397A (en) * | 1979-10-29 | 1981-07-28 | Texas Instruments Incorporated | Virtual ground MOS EPROM or ROM matrix |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| JPS59103352A (ja) * | 1982-12-06 | 1984-06-14 | Oki Electric Ind Co Ltd | Ｍｏｓ型半導体集積回路装置 |
| US4727515A (en) * | 1983-12-14 | 1988-02-23 | General Electric Co. | High density programmable memory array |
| US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
| IT1213241B (it) * | 1984-11-07 | 1989-12-14 | Ates Componenti Elettron | Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura. |
| JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
| US4635347A (en) * | 1985-03-29 | 1987-01-13 | Advanced Micro Devices, Inc. | Method of fabricating titanium silicide gate electrodes and interconnections |
| US4833514A (en) * | 1985-05-01 | 1989-05-23 | Texas Instruments Incorporated | Planar FAMOS transistor with sealed floating gate and DCS+N2 O oxide |
| US4698900A (en) * | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
| US4806201A (en) * | 1986-12-04 | 1989-02-21 | Texas Instruments Incorporated | Use of sidewall oxide to reduce filaments |
| US4749443A (en) * | 1986-12-04 | 1988-06-07 | Texas Instruments Incorporated | Sidewall oxide to reduce filaments |
| JPS63186477A (ja) * | 1987-01-29 | 1988-08-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS63252481A (ja) * | 1987-04-09 | 1988-10-19 | Toshiba Corp | 不揮発性半導体メモリ |
| US5008856A (en) * | 1987-06-29 | 1991-04-16 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
| JP2511485B2 (ja) * | 1988-01-12 | 1996-06-26 | 沖電気工業株式会社 | 半導体記憶装置 |
| FR2626401B1 (fr) * | 1988-01-26 | 1990-05-18 | Sgs Thomson Microelectronics | Memoire eeprom a grille flottante avec transistor de selection de ligne de source |
| JPH0770235B2 (ja) * | 1988-06-24 | 1995-07-31 | 株式会社東芝 | 不揮発性メモリ回路装置 |
| US4912676A (en) * | 1988-08-09 | 1990-03-27 | Texas Instruments, Incorporated | Erasable programmable memory |
| US5023681A (en) * | 1988-10-08 | 1991-06-11 | Hyundai Electronics Industries Co., Ltd. | Method for arranging EEPROM cells and a semiconductor device manufactured by the method |
| US4996669A (en) * | 1989-03-08 | 1991-02-26 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND memory cell structure |
| US4992980A (en) * | 1989-08-07 | 1991-02-12 | Intel Corporation | Novel architecture for virtual ground high-density EPROMS |
| US5204835A (en) * | 1990-06-13 | 1993-04-20 | Waferscale Integration Inc. | Eprom virtual ground array |
| US5245570A (en) * | 1990-12-21 | 1993-09-14 | Intel Corporation | Floating gate non-volatile memory blocks and select transistors |
| US5197029A (en) * | 1991-02-07 | 1993-03-23 | Texas Instruments Incorporated | Common-line connection for integrated memory array |
-
1991
- 1991-11-11 JP JP29464691A patent/JP3002309B2/ja not_active Expired - Fee Related
- 1991-11-12 EP EP91310406A patent/EP0486249B1/de not_active Expired - Lifetime
- 1991-11-12 DE DE69128909T patent/DE69128909D1/de not_active Expired - Lifetime
-
1992
- 1992-06-30 US US07/908,595 patent/US5862076A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0486249B1 (de) | 1998-02-11 |
| JPH0758299A (ja) | 1995-03-03 |
| US5862076A (en) | 1999-01-19 |
| EP0486249A2 (de) | 1992-05-20 |
| EP0486249A3 (en) | 1993-05-19 |
| JP3002309B2 (ja) | 2000-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de |