DE69129081T2 - Gerät und Verfahren zur Niederschlagung durch einen Kollimator - Google Patents

Gerät und Verfahren zur Niederschlagung durch einen Kollimator

Info

Publication number
DE69129081T2
DE69129081T2 DE69129081T DE69129081T DE69129081T2 DE 69129081 T2 DE69129081 T2 DE 69129081T2 DE 69129081 T DE69129081 T DE 69129081T DE 69129081 T DE69129081 T DE 69129081T DE 69129081 T2 DE69129081 T2 DE 69129081T2
Authority
DE
Germany
Prior art keywords
collimator
precipitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69129081T
Other languages
English (en)
Other versions
DE69129081D1 (de
Inventor
Richard Ernest Demaray
John C Helmer
Young Hoon Park
Ronald R Cochran
Vance Eber Hoffman Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23870722&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69129081(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE69129081D1 publication Critical patent/DE69129081D1/de
Application granted granted Critical
Publication of DE69129081T2 publication Critical patent/DE69129081T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3447Collimators, shutters, apertures
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3494Adaptation to extreme pressure conditions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3322Problems associated with coating
    • H01J2237/3327Coating high aspect ratio workpieces
DE69129081T 1990-01-29 1991-01-24 Gerät und Verfahren zur Niederschlagung durch einen Kollimator Expired - Fee Related DE69129081T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47121290A 1990-01-29 1990-01-29

Publications (2)

Publication Number Publication Date
DE69129081D1 DE69129081D1 (de) 1998-04-23
DE69129081T2 true DE69129081T2 (de) 1998-07-02

Family

ID=23870722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129081T Expired - Fee Related DE69129081T2 (de) 1990-01-29 1991-01-24 Gerät und Verfahren zur Niederschlagung durch einen Kollimator

Country Status (4)

Country Link
US (1) US5330628A (de)
EP (1) EP0440377B1 (de)
CA (1) CA2035106A1 (de)
DE (1) DE69129081T2 (de)

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JPH04371578A (ja) * 1991-06-19 1992-12-24 Sony Corp マグネトロンスパッタリング装置
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
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US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
US5300813A (en) 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5344352A (en) * 1992-04-02 1994-09-06 U.S. Philips Corporation Method of manufacturing a pointed electrode, and device for using said method
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
JP3231900B2 (ja) * 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
FR2698093B1 (fr) * 1992-11-17 1995-01-27 Saint Gobain Vitrage Int Vitrage à propriétés de transmission variant avec l'incidence.
CA2111536A1 (en) * 1992-12-16 1994-06-17 Geri M. Actor Collimated deposition apparatus
TW271490B (de) * 1993-05-05 1996-03-01 Varian Associates
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
EP0625792B1 (de) * 1993-05-19 1997-05-28 Applied Materials, Inc. Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät
EP0634779A1 (de) * 1993-06-11 1995-01-18 Applied Materials, Inc. Kollimationskammer mit drehbarem Sockel
US5409587A (en) * 1993-09-16 1995-04-25 Micron Technology, Inc. Sputtering with collinator cleaning within the sputtering chamber
US5478455A (en) * 1993-09-17 1995-12-26 Varian Associates, Inc. Method for controlling a collimated sputtering source
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
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US5616218A (en) * 1994-09-12 1997-04-01 Matereials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
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JPH11509273A (ja) * 1995-07-10 1999-08-17 シーヴィシー、プラダクツ、インク 永久磁石配列装置とその方法
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US5750012A (en) * 1996-04-04 1998-05-12 Micron Technology, Inc. Multiple species sputtering for improved bottom coverage and improved sputter rate
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US5827408A (en) * 1996-07-26 1998-10-27 Applied Materials, Inc Method and apparatus for improving the conformality of sputter deposited films
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US6168832B1 (en) * 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness
US6436246B1 (en) 1997-01-27 2002-08-20 Micron Technology, Inc. Collimated sputter deposition monitor using sheet resistance
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
KR100277321B1 (ko) * 1997-02-19 2001-01-15 미다라이 후지오 반응성스퍼터링장치및이를이용하는박막형성방법
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6692617B1 (en) * 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
US6605197B1 (en) 1997-05-13 2003-08-12 Applied Materials, Inc. Method of sputtering copper to fill trenches and vias
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
DE29713897U1 (de) 1997-08-04 1998-12-03 Howmedica Gmbh Räumwerkzeug zum Aufbohren von Knochenkanälen
US6045634A (en) * 1997-08-14 2000-04-04 Praxair S. T. Technology, Inc. High purity titanium sputtering target and method of making
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US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
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Also Published As

Publication number Publication date
EP0440377B1 (de) 1998-03-18
US5330628A (en) 1994-07-19
DE69129081D1 (de) 1998-04-23
EP0440377A2 (de) 1991-08-07
CA2035106A1 (en) 1991-07-30
EP0440377A3 (en) 1992-01-29

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