DE69130263T2 - Verfahren zum Herstellen von polykristallinem Silizium mit mikrorauher Oberfläche - Google Patents

Verfahren zum Herstellen von polykristallinem Silizium mit mikrorauher Oberfläche

Info

Publication number
DE69130263T2
DE69130263T2 DE69130263T DE69130263T DE69130263T2 DE 69130263 T2 DE69130263 T2 DE 69130263T2 DE 69130263 T DE69130263 T DE 69130263T DE 69130263 T DE69130263 T DE 69130263T DE 69130263 T2 DE69130263 T2 DE 69130263T2
Authority
DE
Germany
Prior art keywords
micro
production
polycrystalline silicon
rough surface
rough
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69130263T
Other languages
English (en)
Other versions
DE69130263D1 (de
Inventor
Hirohito Watanabe
Toru Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2072462A external-priority patent/JP2937395B2/ja
Priority claimed from JP2249154A external-priority patent/JP2861343B2/ja
Priority claimed from JP2327069A external-priority patent/JP2800408B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69130263D1 publication Critical patent/DE69130263D1/de
Application granted granted Critical
Publication of DE69130263T2 publication Critical patent/DE69130263T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69130263T 1990-03-20 1991-03-20 Verfahren zum Herstellen von polykristallinem Silizium mit mikrorauher Oberfläche Expired - Lifetime DE69130263T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2072462A JP2937395B2 (ja) 1990-03-20 1990-03-20 半導体素子
JP2249154A JP2861343B2 (ja) 1990-09-19 1990-09-19 半導体装置およびその製造方法
JP2327069A JP2800408B2 (ja) 1990-11-28 1990-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69130263D1 DE69130263D1 (de) 1998-10-29
DE69130263T2 true DE69130263T2 (de) 1999-02-18

Family

ID=27300963

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69130263T Expired - Lifetime DE69130263T2 (de) 1990-03-20 1991-03-20 Verfahren zum Herstellen von polykristallinem Silizium mit mikrorauher Oberfläche
DE69122796T Expired - Lifetime DE69122796T2 (de) 1990-03-20 1991-03-20 Verfahren zum Herstellen eines Halbleiterbauelements mit einem Kondensator, wobei polykristallines Silizium mit mikrorauher Oberfläche verwendet wird
DE69132354T Expired - Lifetime DE69132354T2 (de) 1990-03-20 1991-03-20 Halbleitervorrichtung

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69122796T Expired - Lifetime DE69122796T2 (de) 1990-03-20 1991-03-20 Verfahren zum Herstellen eines Halbleiterbauelements mit einem Kondensator, wobei polykristallines Silizium mit mikrorauher Oberfläche verwendet wird
DE69132354T Expired - Lifetime DE69132354T2 (de) 1990-03-20 1991-03-20 Halbleitervorrichtung

Country Status (4)

Country Link
US (2) US5366917A (de)
EP (3) EP0630055B1 (de)
KR (1) KR960012915B1 (de)
DE (3) DE69130263T2 (de)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244842A (en) * 1991-12-17 1993-09-14 Micron Technology, Inc. Method of increasing capacitance by surface roughening in semiconductor wafer processing
GB2290908B (en) * 1991-09-07 1996-05-01 Samsung Electronics Co Ltd Semiconductor memory device
US5350707A (en) * 1991-11-19 1994-09-27 Samsung Electronics Co., Ltd. Method for making a capacitor having an electrode surface with a plurality of trenches formed therein
US5191509A (en) * 1991-12-11 1993-03-02 International Business Machines Corporation Textured polysilicon stacked trench capacitor
EP0553791A1 (de) * 1992-01-31 1993-08-04 Nec Corporation Kondensatorelektrode für DRAM und Verfahren zu ihrer Herstellung
KR960002097B1 (ko) * 1992-02-28 1996-02-10 삼성전자주식회사 반도체장치의 커패시터 제조방법
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
DE4419074C2 (de) * 1993-06-03 1998-07-02 Micron Semiconductor Inc Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung
US6328794B1 (en) * 1993-06-26 2001-12-11 International Business Machines Corporation Method of controlling stress in a film
US5656531A (en) * 1993-12-10 1997-08-12 Micron Technology, Inc. Method to form hemi-spherical grain (HSG) silicon from amorphous silicon
US5972771A (en) * 1994-03-11 1999-10-26 Micron Technology, Inc. Enhancing semiconductor structure surface area using HSG and etching
JP2697645B2 (ja) * 1994-10-31 1998-01-14 日本電気株式会社 半導体装置の製造方法
US6121081A (en) * 1994-11-15 2000-09-19 Micron Technology, Inc. Method to form hemi-spherical grain (HSG) silicon
KR0165499B1 (en) * 1995-01-26 1998-12-15 Samsung Electronics Co Ltd Capacitor fabrication method of semiconductor device
JP2689935B2 (ja) * 1995-02-01 1997-12-10 日本電気株式会社 半導体薄膜形成方法
KR0165496B1 (ko) * 1995-03-22 1998-12-15 윤종용 고집적 반도체장치의 캐패시터 제조방법
KR960039197A (ko) * 1995-04-12 1996-11-21 모리시다 요이치 실리콘 산화막의 형성방법 및 반도체 장치의 제조방법
US5508223A (en) * 1995-05-05 1996-04-16 Vanguard International Semiconductor Corporation Method for manufacturing DRAM cell with fork-shaped capacitor
US5597754A (en) * 1995-05-25 1997-01-28 Industrial Technology Research Institute Increased surface area for DRAM, storage node capacitors, using a novel polysilicon deposition and anneal process
JP4003888B2 (ja) * 1995-06-06 2007-11-07 旭化成エレクトロニクス株式会社 半導体装置およびその製造方法
US5663090A (en) * 1995-06-29 1997-09-02 Micron Technology, Inc. Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMs
US5885882A (en) * 1995-07-18 1999-03-23 Micron Technology, Inc. Method for making polysilicon electrode with increased surface area making same
US5856007A (en) * 1995-07-18 1999-01-05 Sharan; Sujit Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices
US6187628B1 (en) * 1995-08-23 2001-02-13 Micron Technology, Inc. Semiconductor processing method of forming hemispherical grain polysilicon and a substrate having a hemispherical grain polysilicon layer
US5639685A (en) * 1995-10-06 1997-06-17 Micron Technology, Inc. Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon
US6638818B1 (en) * 1995-10-06 2003-10-28 Texas Instruments Incorporated Method of fabricating a dynamic random access memory with increased capacitance
KR100224710B1 (ko) 1995-10-10 1999-10-15 윤종용 반도체 장치의 커패시터 제조 방법
US5801104A (en) * 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
US5612558A (en) * 1995-11-15 1997-03-18 Micron Technology, Inc. Hemispherical grained silicon on refractory metal nitride
US5801413A (en) * 1995-12-19 1998-09-01 Micron Technology, Inc. Container-shaped bottom electrode for integrated circuit capacitor with partially rugged surface
US6015986A (en) * 1995-12-22 2000-01-18 Micron Technology, Inc. Rugged metal electrodes for metal-insulator-metal capacitors
KR100224707B1 (ko) * 1995-12-23 1999-10-15 윤종용 반도체 장치 커패시터의 제조방법
US5830793A (en) * 1995-12-28 1998-11-03 Micron Technology, Inc. Method of selective texfturing for patterned polysilicon electrodes
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
JP2795313B2 (ja) * 1996-05-08 1998-09-10 日本電気株式会社 容量素子及びその製造方法
US6027970A (en) * 1996-05-17 2000-02-22 Micron Technology, Inc. Method of increasing capacitance of memory cells incorporating hemispherical grained silicon
KR100219482B1 (ko) * 1996-05-23 1999-09-01 윤종용 반도체 메모리 장치의 커패시터 제조 방법
JPH1084097A (ja) * 1996-05-31 1998-03-31 Texas Instr Inc <Ti> 波形柱状コンデンサを有するｄｒａｍセル及びその製造方法
KR100235938B1 (ko) * 1996-06-24 1999-12-15 김영환 반구형 실리콘 제조방법
KR100230363B1 (ko) * 1996-06-28 1999-11-15 윤종용 반도체장치의 커패시터 제조방법
US6190992B1 (en) 1996-07-15 2001-02-20 Micron Technology, Inc. Method to achieve rough silicon surface on both sides of container for enhanced capacitance/area electrodes
US5849624A (en) * 1996-07-30 1998-12-15 Mircon Technology, Inc. Method of fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor
US5888295A (en) * 1996-08-20 1999-03-30 Micron Technology, Inc. Method of forming a silicon film
US5960279A (en) * 1996-08-27 1999-09-28 Mosel Vitellic Incorporated Method of fabricating a capacitor on a rugged stacked oxide layer
US6528436B1 (en) * 1996-10-21 2003-03-04 Micron Technology. Inc. Method of forming silicon nitride layer directly on HSG polysilicon
JP2953407B2 (ja) * 1996-10-21 1999-09-27 日本電気株式会社 半導体装置の製造方法
US5770500A (en) * 1996-11-15 1998-06-23 Micron Technology, Inc. Process for improving roughness of conductive layer
KR100269287B1 (ko) * 1996-11-22 2000-11-01 윤종용 반도체장치의hsg형성방법
US5798280A (en) * 1996-12-02 1998-08-25 Micron Technology, Inc. Process for doping hemispherical grain silicon
GB2320133B (en) * 1996-12-04 2001-10-24 United Microelectronics Corp A method for increasing capacitance
US6060354A (en) * 1996-12-20 2000-05-09 Texas Instruments Incorporated In-situ doped rough polysilicon storage cell structure formed using gas phase nucleation
US6117692A (en) * 1997-01-14 2000-09-12 Kim; Young-Sun Calibrated methods of forming hemispherical grained silicon layers
JPH10242417A (ja) * 1997-02-25 1998-09-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6069053A (en) 1997-02-28 2000-05-30 Micron Technology, Inc. Formation of conductive rugged silicon
US5937314A (en) * 1997-02-28 1999-08-10 Micron Technology, Inc. Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
US6699745B1 (en) * 1997-03-27 2004-03-02 Texas Instruments Incorporated Capacitor and memory structure and method
KR100259038B1 (ko) * 1997-03-31 2000-06-15 윤종용 반도체커패시터제조방법및그에따라형성된반도체커패시터
KR100255662B1 (ko) 1997-05-03 2000-05-01 윤종용 반구형그레인의다결정실리콘막을갖는반도체장치의제조방법
KR100247931B1 (ko) * 1997-05-21 2000-03-15 윤종용 반구형 그레인의 다결정실리콘막을 갖는 반도체장치의 제조방법
US6245632B1 (en) 1997-05-22 2001-06-12 Samsung Electronics Co., Ltd. Variable temperature methods of forming hemispherical grained silicon (HSG-Si) layers
US5907774A (en) * 1997-05-29 1999-05-25 Texas Instruments Incorporated Corrugated post capacitor and method of fabricating using selective silicon deposition
US6066576A (en) * 1997-06-04 2000-05-23 Micron Technology, Inc. Method for forming oxide using high pressure
JP3149910B2 (ja) * 1997-06-05 2001-03-26 日本電気株式会社 半導体装置の製造方法
KR100234380B1 (ko) * 1997-06-11 1999-12-15 윤종용 반구형 그레인의 실리콘막을 갖는 반도체장치의 제조방법
US6249019B1 (en) 1997-06-27 2001-06-19 Micron Technology, Inc. Container capacitor with increased surface area and method for making same
KR100253086B1 (ko) * 1997-07-25 2000-04-15 윤종용 반도체장치제조를위한세정용조성물및이를이용한반도체장치의제조방법
US6048763A (en) * 1997-08-21 2000-04-11 Micron Technology, Inc. Integrated capacitor bottom electrode with etch stop layer
US5920763A (en) * 1997-08-21 1999-07-06 Micron Technology, Inc. Method and apparatus for improving the structural integrity of stacked capacitors
JP3796030B2 (ja) 1997-11-16 2006-07-12 キヤノンアネルバ株式会社 薄膜作成装置
KR100258096B1 (ko) * 1997-12-01 2000-06-01 정선종 에스오아이(soi) 기판 제조방법
US5885867A (en) * 1997-12-03 1999-03-23 Samsung Electronics Co., Ltd. Methods of forming hemispherical grained silicon layers including anti-nucleation gases
US6004858A (en) * 1997-12-11 1999-12-21 Samsung Electronics Co., Ltd. Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers
JPH11214646A (ja) * 1998-01-28 1999-08-06 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US6087226A (en) * 1998-03-26 2000-07-11 Samsung Electronics Co., Ltd. Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structures
KR100327123B1 (ko) 1998-03-30 2002-08-24 삼성전자 주식회사 디램셀캐패시터의제조방법
KR100265329B1 (ko) 1998-04-22 2000-09-15 김영환 반도체 장치의 선택적 반구형 실리콘 그레인전하저장전극 형성방법
EP0954030A1 (de) * 1998-04-30 1999-11-03 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Kondensators für eine Halbleiter-Speicheranordnung
JP3161523B2 (ja) * 1998-05-14 2001-04-25 日本電気株式会社 半導体装置の製造方法
US6355536B1 (en) 1998-06-08 2002-03-12 Micron Technology, Inc. Selective method to form roughened silicon
TW429618B (en) * 1998-08-01 2001-04-11 United Microelectronics Corp Fabricating method for the capacitor of dynamic random access memory
KR100282709B1 (ko) * 1998-08-28 2001-03-02 윤종용 반구형 실리콘을 이용한 캐패시터의 제조 방법
GB2341271B (en) * 1998-09-01 2001-04-18 United Semiconductor Corp Method of fabricating capacitor
US6004857A (en) * 1998-09-17 1999-12-21 Taiwan Semiconductor Manufacturing Company Method to increase DRAM capacitor via rough surface storage node plate
US6136660A (en) * 1998-09-28 2000-10-24 Siemens Aktiengesellschaft Stacked capacitator memory cell and method of fabrication
US6358793B1 (en) * 1999-02-26 2002-03-19 Micron Technology, Inc. Method for localized masking for semiconductor structure development
US6303956B1 (en) 1999-02-26 2001-10-16 Micron Technology, Inc. Conductive container structures having a dielectric cap
US6764916B1 (en) * 1999-03-23 2004-07-20 Hitachi Kokusai Electric Inc. Manufacturing method for semiconductor device
KR100316523B1 (ko) * 1999-04-23 2001-12-12 김영환 커패시터 제조방법
KR100316524B1 (ko) * 1999-04-29 2001-12-12 김영환 커패시터 제조방법
JP4655321B2 (ja) * 1999-08-27 2011-03-23 東京エレクトロン株式会社 熱処理方法
US6559007B1 (en) * 2000-04-06 2003-05-06 Micron Technology, Inc. Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
DE10034005A1 (de) * 2000-07-07 2002-01-24 Infineon Technologies Ag Verfahren zum Erzeugen von Mikro-Rauhigkeiten auf einer Oberfläche
DE10038378A1 (de) 2000-08-07 2002-02-28 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorelektroden
US6455372B1 (en) * 2000-08-14 2002-09-24 Micron Technology, Inc. Nucleation for improved flash erase characteristics
US6639266B1 (en) 2000-08-30 2003-10-28 Micron Technology, Inc. Modifying material removal selectivity in semiconductor structure development
US6544908B1 (en) 2000-08-30 2003-04-08 Micron Technology, Inc. Ammonia gas passivation on nitride encapsulated devices
JP2002076293A (ja) * 2000-09-01 2002-03-15 Matsushita Electric Ind Co Ltd キャパシタ及び半導体装置の製造方法
US20020182893A1 (en) * 2001-06-05 2002-12-05 International Business Machines Corporation Oxidation of silicon nitride films in semiconductor devices
TWI230392B (en) 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
US6709947B1 (en) 2002-12-06 2004-03-23 International Business Machines Corporation Method of area enhancement in capacitor plates
US20040228168A1 (en) 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
US7297407B2 (en) * 2004-09-20 2007-11-20 E. I. Du Pont De Nemours And Company Glass laminates for reduction of sound transmission
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
WO2009031052A2 (en) 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
JP2008257086A (ja) * 2007-04-09 2008-10-23 Sony Corp 表示装置、表示装置の製造方法および電子機器
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
KR20120006516A (ko) 2009-03-31 2012-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 디바이스를 제공하기 위한 기술들
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
EP2548227B1 (de) 2010-03-15 2021-07-14 Micron Technology, Inc. Verfahren zur bereitstellung einer halbleiterspeichervorrichtung
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US9611133B2 (en) * 2014-09-11 2017-04-04 Invensense, Inc. Film induced interface roughening and method of producing the same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301588A (en) * 1980-02-01 1981-11-24 International Business Machines Corporation Consumable amorphous or polysilicon emitter process
DE3241959A1 (de) * 1981-11-13 1983-05-26 Canon K.K., Tokyo Halbleiterbauelement
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor
GB2130009B (en) * 1982-11-12 1986-04-03 Rca Corp Polycrystalline silicon layers for semiconductor devices
US4757360A (en) * 1983-07-06 1988-07-12 Rca Corporation Floating gate memory device with facing asperities on floating and control gates
US4774202A (en) * 1985-11-07 1988-09-27 Sprague Electric Company Memory device with interconnected polysilicon layers and method for making
JPH0736437B2 (ja) * 1985-11-29 1995-04-19 株式会社日立製作所 半導体メモリの製造方法
US4874716A (en) * 1986-04-01 1989-10-17 Texas Instrument Incorporated Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface
US5017505A (en) * 1986-07-18 1991-05-21 Nippondenso Co., Ltd. Method of making a nonvolatile semiconductor memory apparatus with a floating gate
DE3628374A1 (de) * 1986-08-21 1988-02-25 Siemens Ag Verfahren zum herstellen von aus polykristallinem silizium bestehenden schichtstrukturen, insbesondere fuer emitteranschlussgebiete in integrierten halbleiterschaltungen
GB2199987A (en) * 1986-12-22 1988-07-20 Rca Corp Doped polycrystalline silicon layers for semiconductor devices
EP0281233A1 (de) * 1987-01-30 1988-09-07 AT&T Corp. Bildung einer isolierenden Schicht auf abgeschiedenem Silizium
JP2564316B2 (ja) * 1987-08-10 1996-12-18 株式会社日立製作所 半導体装置およびその製造方法
JPH01102918A (ja) * 1987-10-16 1989-04-20 Nec Corp 多結晶シリコン薄膜の製造方法
US5270224A (en) * 1988-03-11 1993-12-14 Fujitsu Limited Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit
JPH023557A (ja) * 1988-03-30 1990-01-09 Mitsuboshi Belting Ltd トラックライナー
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
JP2654393B2 (ja) * 1988-05-16 1997-09-17 株式会社日立製作所 半導体装置
DE3916228C2 (de) * 1988-05-18 1995-06-22 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
JPH02208293A (ja) * 1989-02-08 1990-08-17 Kanazawa Univ 多結晶シリコン膜の製造方法
US5070032A (en) * 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5183772A (en) * 1989-05-10 1993-02-02 Samsung Electronics Co., Ltd. Manufacturing method for a DRAM cell
JPH02310959A (ja) * 1989-05-25 1990-12-26 Nec Corp 半導体装置及びその製造方法
US5290729A (en) * 1990-02-16 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof
JPH0697682B2 (ja) * 1990-03-20 1994-11-30 株式会社東芝 半導体装置の製造方法
US5114873A (en) * 1990-05-21 1992-05-19 Samsung Electronics Co., Ltd. Method for manufacturing a stacked capacitor DRAM cell
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
US5061650A (en) * 1991-01-17 1991-10-29 Micron Technology, Inc. Method for formation of a stacked capacitor
KR940011801B1 (ko) * 1991-03-23 1994-12-26 삼성전자 주식회사 고용량 캐패시터를 포함하는 반도체 장치 및 그의 제조방법
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
US5110752A (en) * 1991-07-10 1992-05-05 Industrial Technology Research Institute Roughened polysilicon surface capacitor electrode plate for high denity dram
US5245206A (en) * 1992-05-12 1993-09-14 International Business Machines Corporation Capacitors with roughened single crystal plates

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DE69130263D1 (de) 1998-10-29
EP0448374A1 (de) 1991-09-25
EP0630055A3 (de) 1995-01-04
US5723379A (en) 1998-03-03
EP0689252B1 (de) 2000-08-02
DE69132354D1 (de) 2000-09-07
DE69122796D1 (de) 1996-11-28
EP0630055B1 (de) 1998-09-23
KR960012915B1 (en) 1996-09-25
DE69122796T2 (de) 1997-02-20
DE69132354T2 (de) 2000-12-28
EP0448374B1 (de) 1996-10-23
EP0689252A1 (de) 1995-12-27
EP0630055A2 (de) 1994-12-21
US5366917A (en) 1994-11-22

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