DE69130293D1 - Minimierung der partikelerzeugung in cvd-reaktoren und verfahren - Google Patents

Minimierung der partikelerzeugung in cvd-reaktoren und verfahren

Info

Publication number
DE69130293D1
DE69130293D1 DE69130293T DE69130293T DE69130293D1 DE 69130293 D1 DE69130293 D1 DE 69130293D1 DE 69130293 T DE69130293 T DE 69130293T DE 69130293 T DE69130293 T DE 69130293T DE 69130293 D1 DE69130293 D1 DE 69130293D1
Authority
DE
Germany
Prior art keywords
minimization
processes
particle production
cvd reactors
reactors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69130293T
Other languages
English (en)
Other versions
DE69130293T2 (de
DE69130293T3 (de
Inventor
James Tappan
Arthur Yasuda
Dean Denison
Randall Mundt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24496727&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69130293(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69130293D1 publication Critical patent/DE69130293D1/de
Publication of DE69130293T2 publication Critical patent/DE69130293T2/de
Application granted granted Critical
Publication of DE69130293T3 publication Critical patent/DE69130293T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
DE69130293T 1990-12-11 1991-12-11 Minimierung der partikelerzeugung in cvd-reaktoren und verfahren Expired - Lifetime DE69130293T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/623,090 US5200232A (en) 1990-12-11 1990-12-11 Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
PCT/US1991/009407 WO1992010308A1 (en) 1990-12-11 1991-12-11 Minimization of particle generation in cvd reactors and methods

Publications (3)

Publication Number Publication Date
DE69130293D1 true DE69130293D1 (de) 1998-11-05
DE69130293T2 DE69130293T2 (de) 1999-05-06
DE69130293T3 DE69130293T3 (de) 2002-05-02

Family

ID=24496727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69130293T Expired - Lifetime DE69130293T3 (de) 1990-12-11 1991-12-11 Minimierung der partikelerzeugung in cvd-reaktoren und verfahren

Country Status (6)

Country Link
US (2) US5200232A (de)
EP (1) EP0562035B2 (de)
JP (1) JPH0594950A (de)
KR (1) KR100190951B1 (de)
DE (1) DE69130293T3 (de)
WO (1) WO1992010308A1 (de)

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Also Published As

Publication number Publication date
DE69130293T2 (de) 1999-05-06
US5200232A (en) 1993-04-06
EP0562035B1 (de) 1998-09-30
EP0562035A1 (de) 1993-09-29
JPH0594950A (ja) 1993-04-16
EP0562035A4 (en) 1995-12-13
WO1992010308A1 (en) 1992-06-25
KR100190951B1 (ko) 1999-06-15
EP0562035B2 (de) 2001-09-05
DE69130293T3 (de) 2002-05-02
US5368646A (en) 1994-11-29

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8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings