DE69131146D1 - Methode zur Wärmebehandlung eines Substrates - Google Patents

Methode zur Wärmebehandlung eines Substrates

Info

Publication number
DE69131146D1
DE69131146D1 DE69131146T DE69131146T DE69131146D1 DE 69131146 D1 DE69131146 D1 DE 69131146D1 DE 69131146 T DE69131146 T DE 69131146T DE 69131146 T DE69131146 T DE 69131146T DE 69131146 D1 DE69131146 D1 DE 69131146D1
Authority
DE
Germany
Prior art keywords
substrate
heat treatment
treatment
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131146T
Other languages
English (en)
Other versions
DE69131146T2 (de
Inventor
Nobutoshi Orgami
Yoshiteru Fukutomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Publication of DE69131146D1 publication Critical patent/DE69131146D1/de
Application granted granted Critical
Publication of DE69131146T2 publication Critical patent/DE69131146T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
DE69131146T 1990-06-12 1991-06-07 Methode zur Wärmebehandlung eines Substrates Expired - Fee Related DE69131146T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2154921A JP2704309B2 (ja) 1990-06-12 1990-06-12 基板処理装置及び基板の熱処理方法

Publications (2)

Publication Number Publication Date
DE69131146D1 true DE69131146D1 (de) 1999-05-27
DE69131146T2 DE69131146T2 (de) 1999-08-19

Family

ID=15594866

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131146T Expired - Fee Related DE69131146T2 (de) 1990-06-12 1991-06-07 Methode zur Wärmebehandlung eines Substrates

Country Status (5)

Country Link
US (1) US5430271A (de)
EP (1) EP0462459B1 (de)
JP (1) JP2704309B2 (de)
KR (1) KR940010151B1 (de)
DE (1) DE69131146T2 (de)

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JP2638668B2 (ja) * 1990-09-03 1997-08-06 大日本スクリーン製造株式会社 基板搬送方法および基板搬送装置
US5766824A (en) * 1993-07-16 1998-06-16 Semiconductor Systems, Inc. Method and apparatus for curing photoresist
DE634699T1 (de) * 1993-07-16 1996-02-15 Semiconductor Systems Inc Gruppiertes fotolithografisches System.
DE634783T1 (de) * 1993-07-16 1996-02-15 Semiconductor Systems Inc Thermische Behandlungsmodul für Beschichtungs/Entwicklungseinrichtung für Substrat.
US5431700A (en) * 1994-03-30 1995-07-11 Fsi International, Inc. Vertical multi-process bake/chill apparatus
JP3196917B2 (ja) * 1994-06-17 2001-08-06 大日本スクリーン製造株式会社 基板処理装置
TW297910B (de) * 1995-02-02 1997-02-11 Tokyo Electron Co Ltd
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6036426A (en) * 1996-01-26 2000-03-14 Creative Design Corporation Wafer handling method and apparatus
US6133550A (en) 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
JP3202929B2 (ja) * 1996-09-13 2001-08-27 東京エレクトロン株式会社 処理システム
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
JPH11135600A (ja) * 1997-08-25 1999-05-21 Shibaura Mechatronics Corp ロボット装置および処理装置
JP2002504744A (ja) 1997-11-28 2002-02-12 マットソン テクノロジイ インコーポレイテッド 真空処理を行う非加工物を、低汚染かつ高処理能力で取扱うためのシステムおよび方法
DE69936057T2 (de) * 1998-06-19 2008-01-10 Matsushita Electric Industrial Co., Ltd., Kadoma Verfahren und anordnung zur herstellung von höckern
US6169271B1 (en) 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
US6533531B1 (en) 1998-12-29 2003-03-18 Asml Us, Inc. Device for handling wafers in microelectronic manufacturing
US6261853B1 (en) * 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
EP1124252A2 (de) * 2000-02-10 2001-08-16 Applied Materials, Inc. Verfahren und Vorrichtung zur Verarbeitung von Substraten
NL1018086C2 (nl) * 2001-05-16 2002-11-26 Asm Int Werkwijze en inrichting voor het thermisch behandelen van substraten.
US7427329B2 (en) 2002-05-08 2008-09-23 Asm International N.V. Temperature control for single substrate semiconductor processing reactor
US6843201B2 (en) * 2002-05-08 2005-01-18 Asm International Nv Temperature control for single substrate semiconductor processing reactor
US6939403B2 (en) * 2002-11-19 2005-09-06 Blue29, Llc Spatially-arranged chemical processing station
JP4354243B2 (ja) * 2003-04-21 2009-10-28 東京エレクトロン株式会社 被処理体の昇降機構及び処理装置
US7022627B2 (en) 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US7410355B2 (en) * 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US6940047B2 (en) * 2003-11-14 2005-09-06 Asm International N.V. Heat treatment apparatus with temperature control system
US7217670B2 (en) * 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
KR100637717B1 (ko) 2005-09-28 2006-10-25 세메스 주식회사 베이크 유닛, 상기 베이크 유닛에 사용되는 가열플레이트를 냉각하는 방법, 그리고 상기 베이크 유닛을포함하는 기판 처리 장치 및 방법
US7694688B2 (en) 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
US7950407B2 (en) * 2007-02-07 2011-05-31 Applied Materials, Inc. Apparatus for rapid filling of a processing volume
WO2008131513A1 (en) 2007-05-01 2008-11-06 Mattson Technology Canada, Inc. Irradiance pulse heat-treating methods and apparatus
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5318403B2 (ja) 2007-11-30 2013-10-16 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) * 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR101733179B1 (ko) 2010-10-15 2017-05-08 맛선 테크놀러지, 인코포레이티드 워크피스를 노출할 조사 펄스의 형상을 결정하는 방법, 장치 및 매체
CN108663914B (zh) * 2017-03-30 2021-10-08 台湾积体电路制造股份有限公司 烘烤方法

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US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US4178113A (en) * 1977-12-05 1979-12-11 Macronetics, Inc. Buffer storage apparatus for semiconductor wafer processing
JPS5730341A (en) * 1980-07-30 1982-02-18 Anelva Corp Substrate processing device
US4507078A (en) * 1983-03-28 1985-03-26 Silicon Valley Group, Inc. Wafer handling apparatus and method
JPS605509A (ja) * 1983-06-24 1985-01-12 Hitachi Ltd 分子線エピタキシ装置
GB8410251D0 (en) * 1984-04-19 1984-05-31 Heraeus Schott Quarzschmelze Handling semiconductor wafers
JPS6169966A (ja) * 1984-09-14 1986-04-10 Hitachi Ltd 真空処理装置
JPS62104049A (ja) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp ベ−キング炉装置
US4770590A (en) * 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
DE3637608A1 (de) * 1986-11-05 1988-05-19 Windmoeller & Hoelscher Vorrichtung zum teilen einer bahn in schmalere bahnen oder streifen
JPH0693438B2 (ja) * 1986-12-11 1994-11-16 大日本スクリ−ン製造株式会社 基板温度測定装置
JPS63176476A (ja) * 1987-01-14 1988-07-20 Hitachi Ltd 薄膜の形成もしくは加工方法
JPS6449010A (en) * 1987-08-19 1989-02-23 Sumitomo Electric Industries Production of optical cable
JPH01125821A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 気相成長装置
US5034199A (en) * 1987-11-13 1991-07-23 Kopin Corporation Zone melt recrystallization apparatus
KR970008320B1 (ko) * 1987-11-17 1997-05-23 도오교오 에레구토론 가부시끼가이샤 열처리 장치
US4955775A (en) * 1987-12-12 1990-09-11 Tel Sagami Limited Semiconductor wafer treating apparatus
US5177514A (en) * 1988-02-12 1993-01-05 Tokyo Electron Limited Apparatus for coating a photo-resist film and/or developing it after being exposed
JPH07101666B2 (ja) * 1988-02-17 1995-11-01 東京エレクトロン九州株式会社 熱処理方法およひ熱処理装置
JP2502661B2 (ja) * 1988-03-04 1996-05-29 松下電器産業株式会社 気相成長装置
US4840530A (en) * 1988-05-23 1989-06-20 Nguyen Loc H Transfer apparatus for semiconductor wafers
JPH0234789A (ja) * 1988-07-21 1990-02-05 Hitachi Electron Eng Co Ltd 気相反応装置
JP2639093B2 (ja) * 1989-04-28 1997-08-06 日新電機株式会社 イオン処理装置
JPH0812875B2 (ja) * 1989-07-24 1996-02-07 三菱電機株式会社 ボンディング方法とボンディング装置
JP2905857B2 (ja) * 1989-08-11 1999-06-14 東京エレクトロン株式会社 縦型処理装置
JP2889926B2 (ja) * 1989-10-20 1999-05-10 東京エレクトロン株式会社 基板の加熱処理方法及び加熱処理装置
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5277579A (en) * 1991-03-15 1994-01-11 Tokyo Electron Sagami Limited Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system

Also Published As

Publication number Publication date
JP2704309B2 (ja) 1998-01-26
KR940010151B1 (en) 1994-10-22
US5430271A (en) 1995-07-04
EP0462459B1 (de) 1999-04-21
JPH0445514A (ja) 1992-02-14
EP0462459A1 (de) 1991-12-27
DE69131146T2 (de) 1999-08-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee