DE69133052D1 - Funktionelles, supraleitendes, photoelektrisches Bauelement - Google Patents

Funktionelles, supraleitendes, photoelektrisches Bauelement

Info

Publication number
DE69133052D1
DE69133052D1 DE69133052T DE69133052T DE69133052D1 DE 69133052 D1 DE69133052 D1 DE 69133052D1 DE 69133052 T DE69133052 T DE 69133052T DE 69133052 T DE69133052 T DE 69133052T DE 69133052 D1 DE69133052 D1 DE 69133052D1
Authority
DE
Germany
Prior art keywords
superconducting
functional
photoelectric component
photoelectric
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133052T
Other languages
English (en)
Other versions
DE69133052T2 (de
Inventor
Koji Shinohara
Osamu Ohtsuki
Kazuo Murase
Sadao Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69133052D1 publication Critical patent/DE69133052D1/de
Application granted granted Critical
Publication of DE69133052T2 publication Critical patent/DE69133052T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/30—Devices switchable between superconducting and normal states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/84—Switching means for devices switchable between superconducting and normal states
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/848—Radiant energy application
DE69133052T 1990-03-14 1991-03-14 Funktionelles, supraleitendes, photoelektrisches Bauelement Expired - Fee Related DE69133052T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2064551A JP2503091B2 (ja) 1990-03-14 1990-03-14 超電導光機能素子

Publications (2)

Publication Number Publication Date
DE69133052D1 true DE69133052D1 (de) 2002-08-08
DE69133052T2 DE69133052T2 (de) 2003-02-06

Family

ID=13261473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133052T Expired - Fee Related DE69133052T2 (de) 1990-03-14 1991-03-14 Funktionelles, supraleitendes, photoelektrisches Bauelement

Country Status (5)

Country Link
US (1) US5448098A (de)
EP (1) EP0446927B1 (de)
JP (1) JP2503091B2 (de)
KR (1) KR950000523B1 (de)
DE (1) DE69133052T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4171812B2 (ja) * 1995-03-01 2008-10-29 ヤン ゲールライン 超伝導トンネル素子、それから製造されるトンネルスタック及びその使用
US5768002A (en) * 1996-05-06 1998-06-16 Puzey; Kenneth A. Light modulation system including a superconductive plate assembly for use in a data transmission scheme and method
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
DE19705239A1 (de) * 1997-02-12 1998-08-20 Georg Bastian Optoelektronische Anordnung
JP2955931B1 (ja) * 1998-07-17 1999-10-04 セイコーインスツルメンツ株式会社 放射線検出素子
US6107643A (en) * 1999-03-24 2000-08-22 Abb Ab Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof
JP3511098B2 (ja) * 2001-09-14 2004-03-29 独立行政法人産業技術総合研究所 超高速光電気信号変換素子
JP2003101089A (ja) * 2001-09-21 2003-04-04 Central Japan Railway Co 永久電流スイッチ材料及びその製造方法
US6967344B2 (en) * 2003-03-10 2005-11-22 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices
US20040201036A1 (en) * 2003-04-08 2004-10-14 Kiki Ikossi Electronic device with barium fluoride substrate
US6990008B2 (en) * 2003-11-26 2006-01-24 International Business Machines Corporation Switchable capacitance and nonvolatile memory device using the same
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
ES2391729T3 (es) 2005-10-14 2012-11-29 Vive Crop Protection Inc. Nanopartículas compuestas, nanopartículas y métodos para la producción de las mismas
US8393786B2 (en) * 2009-06-01 2013-03-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Superconducting transition edge sensors and methods for design and manufacture thereof
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device
WO2022152977A1 (fr) * 2021-01-12 2022-07-21 Buendia Jose De la lumiere au centre de la matiere

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
JPS63239877A (ja) * 1987-03-26 1988-10-05 Sumitomo Electric Ind Ltd 超電導光トランジスタ
US5057485A (en) * 1987-05-15 1991-10-15 Hitachi, Ltd. Light detecting superconducting Josephson device
US4837609A (en) * 1987-09-09 1989-06-06 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices having superconducting interconnects
US4990487A (en) * 1988-03-11 1991-02-05 The University Of Tokyo Superconductive optoelectronic devices
US4970395A (en) * 1988-12-23 1990-11-13 Honeywell Inc. Wavelength tunable infrared detector based upon super-schottky or superconductor-insulator-superconductor structures employing high transition temperature superconductors

Also Published As

Publication number Publication date
US5448098A (en) 1995-09-05
EP0446927B1 (de) 2002-07-03
EP0446927A1 (de) 1991-09-18
KR910017689A (ko) 1991-11-05
JPH03265176A (ja) 1991-11-26
JP2503091B2 (ja) 1996-06-05
DE69133052T2 (de) 2003-02-06
KR950000523B1 (ko) 1995-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee