DE69133052T2 - Funktionelles, supraleitendes, photoelektrisches Bauelement - Google Patents
Funktionelles, supraleitendes, photoelektrisches BauelementInfo
- Publication number
- DE69133052T2 DE69133052T2 DE69133052T DE69133052T DE69133052T2 DE 69133052 T2 DE69133052 T2 DE 69133052T2 DE 69133052 T DE69133052 T DE 69133052T DE 69133052 T DE69133052 T DE 69133052T DE 69133052 T2 DE69133052 T2 DE 69133052T2
- Authority
- DE
- Germany
- Prior art keywords
- superconducting
- functional
- photoelectric component
- photoelectric
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/848—Radiant energy application
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2064551A JP2503091B2 (ja) | 1990-03-14 | 1990-03-14 | 超電導光機能素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69133052D1 DE69133052D1 (de) | 2002-08-08 |
DE69133052T2 true DE69133052T2 (de) | 2003-02-06 |
Family
ID=13261473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69133052T Expired - Fee Related DE69133052T2 (de) | 1990-03-14 | 1991-03-14 | Funktionelles, supraleitendes, photoelektrisches Bauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US5448098A (de) |
EP (1) | EP0446927B1 (de) |
JP (1) | JP2503091B2 (de) |
KR (1) | KR950000523B1 (de) |
DE (1) | DE69133052T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19607082A1 (de) * | 1995-03-01 | 1996-09-12 | Dornier Gmbh | Supraleitende Tunnelelemente, daraus hergestellte Tunnelstapel sowie deren Verwendung |
US5768002A (en) * | 1996-05-06 | 1998-06-16 | Puzey; Kenneth A. | Light modulation system including a superconductive plate assembly for use in a data transmission scheme and method |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
DE19705239A1 (de) * | 1997-02-12 | 1998-08-20 | Georg Bastian | Optoelektronische Anordnung |
JP2955931B1 (ja) * | 1998-07-17 | 1999-10-04 | セイコーインスツルメンツ株式会社 | 放射線検出素子 |
US6107643A (en) * | 1999-03-24 | 2000-08-22 | Abb Ab | Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof |
JP3511098B2 (ja) * | 2001-09-14 | 2004-03-29 | 独立行政法人産業技術総合研究所 | 超高速光電気信号変換素子 |
JP2003101089A (ja) * | 2001-09-21 | 2003-04-04 | Central Japan Railway Co | 永久電流スイッチ材料及びその製造方法 |
US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
US20040201036A1 (en) * | 2003-04-08 | 2004-10-14 | Kiki Ikossi | Electronic device with barium fluoride substrate |
US6990008B2 (en) * | 2003-11-26 | 2006-01-24 | International Business Machines Corporation | Switchable capacitance and nonvolatile memory device using the same |
US7130212B2 (en) * | 2003-11-26 | 2006-10-31 | International Business Machines Corporation | Field effect device with a channel with a switchable conductivity |
CN102294207B (zh) | 2005-10-14 | 2014-06-04 | 维乌作物保护有限公司 | 复合纳米颗粒、纳米颗粒和制备它们的方法 |
US8674302B2 (en) * | 2009-06-01 | 2014-03-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics Space Administration | Superconducting transition edge sensors and methods for design and manufacture thereof |
US11563162B2 (en) * | 2020-01-09 | 2023-01-24 | International Business Machines Corporation | Epitaxial Josephson junction transmon device |
WO2022152977A1 (fr) * | 2021-01-12 | 2022-07-21 | Buendia Jose | De la lumiere au centre de la matiere |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843446A (en) * | 1986-02-27 | 1989-06-27 | Hitachi, Ltd. | Superconducting photodetector |
JPS63239877A (ja) * | 1987-03-26 | 1988-10-05 | Sumitomo Electric Ind Ltd | 超電導光トランジスタ |
US5057485A (en) * | 1987-05-15 | 1991-10-15 | Hitachi, Ltd. | Light detecting superconducting Josephson device |
US4837609A (en) * | 1987-09-09 | 1989-06-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices having superconducting interconnects |
US4990487A (en) * | 1988-03-11 | 1991-02-05 | The University Of Tokyo | Superconductive optoelectronic devices |
US4970395A (en) * | 1988-12-23 | 1990-11-13 | Honeywell Inc. | Wavelength tunable infrared detector based upon super-schottky or superconductor-insulator-superconductor structures employing high transition temperature superconductors |
-
1990
- 1990-03-14 JP JP2064551A patent/JP2503091B2/ja not_active Expired - Lifetime
-
1991
- 1991-03-14 KR KR1019910004065A patent/KR950000523B1/ko not_active IP Right Cessation
- 1991-03-14 EP EP91103959A patent/EP0446927B1/de not_active Expired - Lifetime
- 1991-03-14 DE DE69133052T patent/DE69133052T2/de not_active Expired - Fee Related
-
1992
- 1992-08-25 US US07/934,306 patent/US5448098A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR910017689A (ko) | 1991-11-05 |
US5448098A (en) | 1995-09-05 |
EP0446927B1 (de) | 2002-07-03 |
JP2503091B2 (ja) | 1996-06-05 |
JPH03265176A (ja) | 1991-11-26 |
DE69133052D1 (de) | 2002-08-08 |
EP0446927A1 (de) | 1991-09-18 |
KR950000523B1 (ko) | 1995-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |