DE69213094T2 - Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen Kondensator - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen KondensatorInfo
- Publication number
- DE69213094T2 DE69213094T2 DE69213094T DE69213094T DE69213094T2 DE 69213094 T2 DE69213094 T2 DE 69213094T2 DE 69213094 T DE69213094 T DE 69213094T DE 69213094 T DE69213094 T DE 69213094T DE 69213094 T2 DE69213094 T2 DE 69213094T2
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- semiconductor arrangement
- producing
- ferroelectric dielectric
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP91201104 | 1991-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69213094D1 DE69213094D1 (de) | 1996-10-02 |
DE69213094T2 true DE69213094T2 (de) | 1997-03-06 |
Family
ID=8207644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69213094T Expired - Fee Related DE69213094T2 (de) | 1991-05-08 | 1992-05-04 | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen Kondensator |
Country Status (6)
Country | Link |
---|---|
US (2) | US5396095A (de) |
EP (1) | EP0513894B1 (de) |
JP (1) | JP3263429B2 (de) |
KR (1) | KR100285871B1 (de) |
CA (1) | CA2068020A1 (de) |
DE (1) | DE69213094T2 (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69426208T2 (de) | 1993-08-05 | 2001-05-17 | Matsushita Electronics Corp | Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren |
JP2875733B2 (ja) * | 1994-02-15 | 1999-03-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JP3119997B2 (ja) * | 1994-06-21 | 2000-12-25 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JP3045928B2 (ja) * | 1994-06-28 | 2000-05-29 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
JPH098244A (ja) * | 1995-06-20 | 1997-01-10 | Yamaha Corp | 半導体装置とその製造方法 |
US5849631A (en) * | 1995-07-17 | 1998-12-15 | Sony Corporation | Method of manufacturing semiconductor device |
JP3417167B2 (ja) | 1995-09-29 | 2003-06-16 | ソニー株式会社 | 半導体メモリ素子のキャパシタ構造及びその形成方法 |
US5716875A (en) * | 1996-03-01 | 1998-02-10 | Motorola, Inc. | Method for making a ferroelectric device |
KR100200704B1 (ko) * | 1996-06-07 | 1999-06-15 | 윤종용 | 강유전체 메모리 장치 및 그 제조 방법 |
US6027947A (en) * | 1996-08-20 | 2000-02-22 | Ramtron International Corporation | Partially or completely encapsulated top electrode of a ferroelectric capacitor |
EP0837504A3 (de) * | 1996-08-20 | 1999-01-07 | Ramtron International Corporation | Teilweise oder ganz eingekapselte ferroelektrische Anordnung |
US5920453A (en) * | 1996-08-20 | 1999-07-06 | Ramtron International Corporation | Completely encapsulated top electrode of a ferroelectric capacitor |
US5864932A (en) * | 1996-08-20 | 1999-02-02 | Ramtron International Corporation | Partially or completely encapsulated top electrode of a ferroelectric capacitor |
TW468253B (en) * | 1997-01-13 | 2001-12-11 | Hitachi Ltd | Semiconductor memory device |
JP4500248B2 (ja) * | 1997-01-13 | 2010-07-14 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3215345B2 (ja) * | 1997-03-19 | 2001-10-02 | 富士通株式会社 | 半導体装置の製造方法 |
JP3257587B2 (ja) | 1997-05-23 | 2002-02-18 | 日本電気株式会社 | 誘電体膜を用いた半導体装置の製造方法 |
JP3149817B2 (ja) * | 1997-05-30 | 2001-03-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
SG74643A1 (en) | 1997-07-24 | 2000-08-22 | Matsushita Electronics Corp | Semiconductor device and method for fabricating the same |
KR100269309B1 (ko) | 1997-09-29 | 2000-10-16 | 윤종용 | 고집적강유전체메모리장치및그제조방법 |
JP3445925B2 (ja) | 1997-10-07 | 2003-09-16 | シャープ株式会社 | 半導体記憶素子の製造方法 |
JPH11145410A (ja) * | 1997-11-13 | 1999-05-28 | Toshiba Corp | 半導体装置およびその製造方法 |
KR100436058B1 (ko) * | 1997-12-27 | 2004-12-17 | 주식회사 하이닉스반도체 | 강유전체 캐패시터 형성 방법 |
KR100291181B1 (ko) * | 1997-12-27 | 2001-07-12 | 박종섭 | 강유전체메모리소자제조방법 |
US6207465B1 (en) * | 1998-04-17 | 2001-03-27 | Symetrix Corporation | Method of fabricating ferroelectric integrated circuit using dry and wet etching |
US6130103A (en) * | 1998-04-17 | 2000-10-10 | Symetrix Corporation | Method for fabricating ferroelectric integrated circuits |
JP2000021892A (ja) * | 1998-06-26 | 2000-01-21 | Nec Corp | 半導体装置の製造方法 |
US6586790B2 (en) * | 1998-07-24 | 2003-07-01 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US6249014B1 (en) * | 1998-10-01 | 2001-06-19 | Ramtron International Corporation | Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices |
EP0993047A1 (de) * | 1998-10-06 | 2000-04-12 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit integrierten Schaltkreiselementen der III-V Gruppe sowie Schutzmittel gegen Wasserstoffverunreinigung |
US6174735B1 (en) | 1998-10-23 | 2001-01-16 | Ramtron International Corporation | Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation |
US6225656B1 (en) * | 1998-12-01 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same |
DE19904379A1 (de) * | 1999-02-03 | 2000-08-17 | Siemens Ag | Mikroelektronische Struktur |
US6242299B1 (en) | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
KR100349642B1 (ko) * | 1999-06-28 | 2002-08-22 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자 및 그 제조 방법 |
KR100329781B1 (ko) * | 1999-06-28 | 2002-03-25 | 박종섭 | 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법 |
KR20010016930A (ko) * | 1999-08-05 | 2001-03-05 | 김지영 | 복합 상부전극 구조를 갖는 강유전체 캐패시터 및 그의 제조방법 |
KR100308131B1 (ko) * | 1999-10-01 | 2001-11-02 | 김영환 | 반도체 소자의 커패시터 제조 방법 |
DE10027914B4 (de) * | 2000-05-31 | 2007-03-08 | Infineon Technologies Ag | Bauelement mit einem Transistor |
DE10121657B4 (de) | 2001-05-03 | 2010-02-11 | Qimonda Ag | Mikroelektronische Struktur mit Wasserstoffbarrierenschicht |
US6858890B2 (en) * | 2002-06-04 | 2005-02-22 | Infineon Technologies Aktiengesellschaft | Ferroelectric memory integrated circuit with improved reliability |
US6977402B2 (en) | 2003-03-25 | 2005-12-20 | Sanyo Electric Co., Ltd. | Memory device having storage part and thin-film part |
WO2006099538A2 (en) * | 2005-03-15 | 2006-09-21 | Nanodynamics, Inc. | Devices with ultrathin structures and method of making same |
US8361811B2 (en) * | 2006-06-28 | 2013-01-29 | Research In Motion Rf, Inc. | Electronic component with reactive barrier and hermetic passivation layer |
EP1873814A2 (de) * | 2006-06-28 | 2008-01-02 | Gennum Corporation | Hermetische Passivationsschichtstruktur für Kondensatoren mit Pervoskit- oder Pyrochlorophasen-Dielektrika |
US20080170352A1 (en) | 2007-01-15 | 2008-07-17 | Seiko Epson Corporation | Capacitor and its manufacturing method |
JP4492819B2 (ja) * | 2007-01-15 | 2010-06-30 | セイコーエプソン株式会社 | キャパシタの製造方法 |
KR20090080751A (ko) * | 2008-01-22 | 2009-07-27 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
EP2139054A3 (de) * | 2008-06-25 | 2011-08-31 | Samsung Electronics Co., Ltd. | Speichervorrichtungen und Herstellungsverfahren dafür |
US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
CN109216360B (zh) | 2017-07-07 | 2021-01-12 | 联华电子股份有限公司 | 半导体存储装置 |
KR102423680B1 (ko) | 2017-09-08 | 2022-07-21 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5214300A (en) * | 1970-09-28 | 1993-05-25 | Ramtron Corporation | Monolithic semiconductor integrated circuit ferroelectric memory device |
JPH02184079A (ja) * | 1989-01-11 | 1990-07-18 | Seiko Epson Corp | 強誘電体記憶装置の形成法 |
US4870539A (en) * | 1989-01-17 | 1989-09-26 | International Business Machines Corporation | Doped titanate glass-ceramic for grain boundary barrier layer capacitors |
JPH02254748A (ja) * | 1989-03-28 | 1990-10-15 | Seiko Epson Corp | 半導体装置 |
NL9000602A (nl) * | 1990-03-16 | 1991-10-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum. |
JP3131982B2 (ja) * | 1990-08-21 | 2001-02-05 | セイコーエプソン株式会社 | 半導体装置、半導体メモリ及び半導体装置の製造方法 |
WO1992006498A1 (en) * | 1990-09-28 | 1992-04-16 | Seiko Epson Corporation | Semiconductor device |
-
1992
- 1992-05-04 DE DE69213094T patent/DE69213094T2/de not_active Expired - Fee Related
- 1992-05-04 EP EP92201215A patent/EP0513894B1/de not_active Expired - Lifetime
- 1992-05-05 CA CA002068020A patent/CA2068020A1/en not_active Abandoned
- 1992-05-07 KR KR1019920007692A patent/KR100285871B1/ko not_active IP Right Cessation
- 1992-05-08 JP JP11622192A patent/JP3263429B2/ja not_active Expired - Fee Related
-
1994
- 1994-03-04 US US08/206,916 patent/US5396095A/en not_active Expired - Lifetime
- 1994-11-29 US US08/346,975 patent/US5554559A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR920022499A (ko) | 1992-12-19 |
US5554559A (en) | 1996-09-10 |
CA2068020A1 (en) | 1992-11-09 |
EP0513894A3 (en) | 1993-05-26 |
EP0513894A2 (de) | 1992-11-19 |
JP3263429B2 (ja) | 2002-03-04 |
KR100285871B1 (ko) | 2001-04-16 |
EP0513894B1 (de) | 1996-08-28 |
JPH05183106A (ja) | 1993-07-23 |
US5396095A (en) | 1995-03-07 |
DE69213094D1 (de) | 1996-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |