DE69216672T2 - Gegen Überlast geschützter Differenzdrucksensor und Verfahren zu seiner Herstellung - Google Patents

Gegen Überlast geschützter Differenzdrucksensor und Verfahren zu seiner Herstellung

Info

Publication number
DE69216672T2
DE69216672T2 DE69216672T DE69216672T DE69216672T2 DE 69216672 T2 DE69216672 T2 DE 69216672T2 DE 69216672 T DE69216672 T DE 69216672T DE 69216672 T DE69216672 T DE 69216672T DE 69216672 T2 DE69216672 T2 DE 69216672T2
Authority
DE
Germany
Prior art keywords
production
pressure sensor
differential pressure
protected against
against overload
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216672T
Other languages
English (en)
Other versions
DE69216672D1 (de
Inventor
Clifford D Fung
John G Panagou
Kevin Chau
Gary A Dahrooge
P Rowe Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schneider Electric Systems USA Inc
Original Assignee
Foxboro Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxboro Co filed Critical Foxboro Co
Application granted granted Critical
Publication of DE69216672D1 publication Critical patent/DE69216672D1/de
Publication of DE69216672T2 publication Critical patent/DE69216672T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material
    • Y10T29/49812—Temporary protective coating, impregnation, or cast layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49995—Shaping one-piece blank by removing material
    • Y10T29/49996—Successive distinct removal operations
DE69216672T 1991-03-28 1992-03-30 Gegen Überlast geschützter Differenzdrucksensor und Verfahren zu seiner Herstellung Expired - Fee Related DE69216672T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/676,914 US5220838A (en) 1991-03-28 1991-03-28 Overpressure-protected, differential pressure sensor and method of making the same

Publications (2)

Publication Number Publication Date
DE69216672D1 DE69216672D1 (de) 1997-02-27
DE69216672T2 true DE69216672T2 (de) 1997-09-04

Family

ID=24716542

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216672T Expired - Fee Related DE69216672T2 (de) 1991-03-28 1992-03-30 Gegen Überlast geschützter Differenzdrucksensor und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (3) US5220838A (de)
EP (1) EP0506491B1 (de)
JP (1) JP3259102B2 (de)
DE (1) DE69216672T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260544A1 (de) * 2002-12-21 2004-07-15 Festo Ag & Co Mehrschichtiges Mikroventil und Verfahren zu seiner Herstellung

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969591A (en) * 1991-03-28 1999-10-19 The Foxboro Company Single-sided differential pressure sensor
US5589810A (en) * 1991-03-28 1996-12-31 The Foxboro Company Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US5476819A (en) * 1993-07-26 1995-12-19 Litton Systems, Inc. Substrate anchor for undercut silicon on insulator microstructures
DE4333099A1 (de) * 1993-09-29 1995-03-30 Bosch Gmbh Robert Kraftsensor und Verfahren zur Herstellung eines Kraftsensors
DE69512544T2 (de) * 1994-03-18 2000-05-25 Foxboro Co Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu
US5581038A (en) * 1994-04-04 1996-12-03 Sentir, Inc. Pressure measurement apparatus having a reverse mounted transducer and overpressure guard
WO1996019719A1 (en) * 1994-12-20 1996-06-27 The Foxboro Company Excitation of polysilicon-based pressure sensors
DE19513921C2 (de) * 1995-04-12 1997-10-16 Siemens Ag Halbleiterchip
US6030851A (en) * 1995-06-07 2000-02-29 Grandmont; Paul E. Method for overpressure protected pressure sensor
US6229427B1 (en) * 1995-07-13 2001-05-08 Kulite Semiconductor Products Inc. Covered sealed pressure transducers and method for making same
US5759870A (en) * 1995-08-28 1998-06-02 Bei Electronics, Inc. Method of making a surface micro-machined silicon pressure sensor
FR2739977B1 (fr) * 1995-10-17 1998-01-23 France Telecom Capteur monolithique d'empreintes digitales
US5627112A (en) * 1995-11-13 1997-05-06 Rockwell International Corporation Method of making suspended microstructures
JPH1091866A (ja) 1996-09-18 1998-04-10 Hitachi Ltd 電子マネー取り引きシステム
US5983727A (en) * 1997-08-19 1999-11-16 Pressure Profile Systems System generating a pressure profile across a pressure sensitive membrane
EP0905495A1 (de) * 1997-09-29 1999-03-31 EM Microelectronic-Marin SA Schutzschicht für integrierte Schaltungsanordnungen und Verfahren zu deren Herstellung
US6036872A (en) 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
US6142021A (en) * 1998-08-21 2000-11-07 Motorola, Inc. Selectable pressure sensor
US6816301B1 (en) 1999-06-29 2004-11-09 Regents Of The University Of Minnesota Micro-electromechanical devices and methods of manufacture
US6514789B2 (en) * 1999-10-26 2003-02-04 Motorola, Inc. Component and method for manufacture
WO2001046665A1 (en) * 1999-12-20 2001-06-28 The Foxboro Company Multivariate semiconductor pressure sensor with passageway
US6704185B2 (en) * 2000-02-23 2004-03-09 National Center For Scientific Research Capacitive pressure-responsive devices and their fabrication
US6465280B1 (en) 2001-03-07 2002-10-15 Analog Devices, Inc. In-situ cap and method of fabricating same for an integrated circuit device
DE10123627B4 (de) * 2001-05-15 2004-11-04 Robert Bosch Gmbh Sensorvorrichtung zum Erfassen einer mechanischen Deformation eines Bauelementes im Kraftfahrzeugbereich
US20040126548A1 (en) * 2001-05-28 2004-07-01 Waseda University ULSI wiring and method of manufacturing the same
US6856007B2 (en) 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US7754537B2 (en) 2003-02-25 2010-07-13 Tessera, Inc. Manufacture of mountable capped chips
US6972480B2 (en) 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices
WO2005004195A2 (en) 2003-07-03 2005-01-13 Shellcase Ltd. Method and apparatus for packaging integrated circuit devices
US20070102831A1 (en) * 2003-12-24 2007-05-10 Shuntaro Machida Device and method of manufacturing the same
US7368313B2 (en) * 2004-02-17 2008-05-06 Robert Bosch Gmbh Method of making a differential pressure sensor
US7188528B2 (en) * 2004-04-23 2007-03-13 Kulite Semiconductor Products, Inc. Low pass filter semiconductor structures for use in transducers for measuring low dynamic pressures in the presence of high static pressures
US7231803B2 (en) * 2004-06-11 2007-06-19 Robert Bosch Gmbh Hybrid impact sensor
US7188511B2 (en) * 2004-06-11 2007-03-13 Robert Bosch Gmbh Stress wave sensor
US7032456B1 (en) * 2004-12-30 2006-04-25 The United States Of America As Represented By The Secretary Of The Navy Isostatic piezoresistive pressure transducer with temperature output
US7449779B2 (en) 2005-03-22 2008-11-11 Tessera, Inc. Wire bonded wafer level cavity package
US8143095B2 (en) 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
US7243552B2 (en) * 2005-05-09 2007-07-17 Delphi Technologies, Inc. Pressure sensor assembly
US7228744B2 (en) * 2005-05-09 2007-06-12 Delphi Technologies, Inc. Pressure transducer for gaseous hydrogen environment
US7395719B2 (en) * 2006-01-13 2008-07-08 Custom Sensors & Technologies, Inc. Preformed sensor housings and methods to produce thin metal diaphragms
US20070163355A1 (en) * 2006-01-13 2007-07-19 Kavlico Corporation Preformed sensor housing and methods to produce thin metal diaphragms
US20070190747A1 (en) * 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
FR2897937B1 (fr) * 2006-02-24 2008-05-23 Commissariat Energie Atomique Capteur de pression a jauges resistives
JP4144640B2 (ja) * 2006-10-13 2008-09-03 オムロン株式会社 振動センサの製造方法
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
US20080277747A1 (en) * 2007-05-08 2008-11-13 Nazir Ahmad MEMS device support structure for sensor packaging
US8297125B2 (en) * 2008-05-23 2012-10-30 Honeywell International Inc. Media isolated differential pressure sensor with cap
US8643127B2 (en) * 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
US8230745B2 (en) 2008-11-19 2012-07-31 Honeywell International Inc. Wet/wet differential pressure sensor based on microelectronic packaging process
US7775119B1 (en) * 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
JP2011164057A (ja) * 2010-02-15 2011-08-25 Mitsubishi Electric Corp 半導体圧力センサおよびその製造方法
US10292445B2 (en) 2011-02-24 2019-05-21 Rochester Institute Of Technology Event monitoring dosimetry apparatuses and methods thereof
US9339224B2 (en) 2011-02-24 2016-05-17 Rochester Institute Of Technology Event dosimeter devices and methods thereof
US9209083B2 (en) 2011-07-11 2015-12-08 King Abdullah University Of Science And Technology Integrated circuit manufacturing for low-profile and flexible devices
WO2013025748A1 (en) * 2011-08-15 2013-02-21 King Abdullah University Of Science And Technology Method for producing mechanically flexible silicon substrate
US9003899B2 (en) 2012-03-23 2015-04-14 Honeywell International Inc. Force sensor
US8806964B2 (en) 2012-03-23 2014-08-19 Honeywell International Inc. Force sensor
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
TW201516386A (zh) * 2013-10-24 2015-05-01 Asia Pacific Microsystems Inc 複合範圍壓力感測器
US9410861B2 (en) 2014-03-25 2016-08-09 Honeywell International Inc. Pressure sensor with overpressure protection
WO2015153938A1 (en) * 2014-04-04 2015-10-08 Robert Bosch Gmbh Membrane-based sensor and method for robust manufacture of a membrane-based sensor
US20160033349A1 (en) * 2014-07-29 2016-02-04 Silicon Microstructures, Inc. Pressure sensor having cap-defined membrane
US9527731B2 (en) * 2014-10-15 2016-12-27 Nxp Usa, Inc. Methodology and system for wafer-level testing of MEMS pressure sensors
USD776664S1 (en) * 2015-05-20 2017-01-17 Chaya Coleena Hendrick Smart card
CN106124117B (zh) * 2016-06-14 2019-04-23 中国科学院地质与地球物理研究所 一种双空腔压力计芯片及其制造工艺
JP2018021796A (ja) * 2016-08-02 2018-02-08 アイシン精機株式会社 半導体歪ゲージ
US10767673B2 (en) * 2018-10-24 2020-09-08 Mueller International, Llc Over-pressure protection system
JP7268630B2 (ja) 2020-03-30 2023-05-08 三菱電機株式会社 半導体圧力センサ及びその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063209A (en) * 1975-05-01 1977-12-13 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing built-in pressure limiting
US4040172A (en) * 1975-05-01 1977-08-09 Kulite Semiconductor Products, Inc. Method of manufacturing integral transducer assemblies employing built-in pressure limiting
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
US4445108A (en) * 1982-09-28 1984-04-24 Kulite Semiconductor Products, Inc. Piezoresistive transducers employing the spreading resistance effect
DE3319605A1 (de) * 1983-05-30 1984-12-06 Siemens AG, 1000 Berlin und 8000 München Sensor mit polykristallinen silicium-widerstaenden
US4528855A (en) * 1984-07-02 1985-07-16 Itt Corporation Integral differential and static pressure transducer
ATE35321T1 (de) * 1985-01-28 1988-07-15 Kristal Instr Ag Messwandlereinsatz, verfahren zu seiner herstellung und verwendung fuer einen aufnehmer zur messung mechanischer groessen.
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4672354A (en) * 1985-12-05 1987-06-09 Kulite Semiconductor Products, Inc. Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
US4773269A (en) * 1986-07-28 1988-09-27 Rosemount Inc. Media isolated differential pressure sensors
US4852408A (en) * 1987-09-03 1989-08-01 Scott Fetzer Company Stop for integrated circuit diaphragm
US4790192A (en) * 1987-09-24 1988-12-13 Rosemount Inc. Silicon side by side coplanar pressure sensors
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US5062302A (en) * 1988-04-29 1991-11-05 Schlumberger Industries, Inc. Laminated semiconductor sensor with overpressure protection
EP0339981A3 (de) * 1988-04-29 1991-10-09 Schlumberger Industries, Inc. Geschichteter Halbleitersensor mit Überdruckschutz
US5134887A (en) * 1989-09-22 1992-08-04 Bell Robert L Pressure sensors
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
US5323656A (en) * 1992-05-12 1994-06-28 The Foxboro Company Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260544A1 (de) * 2002-12-21 2004-07-15 Festo Ag & Co Mehrschichtiges Mikroventil und Verfahren zu seiner Herstellung
DE10260544B4 (de) * 2002-12-21 2005-03-31 Festo Ag & Co.Kg Mehrschichtiges Mikroventil

Also Published As

Publication number Publication date
JPH0626963A (ja) 1994-02-04
US5357808A (en) 1994-10-25
EP0506491B1 (de) 1997-01-15
DE69216672D1 (de) 1997-02-27
EP0506491A2 (de) 1992-09-30
EP0506491A3 (en) 1993-08-11
US5438875A (en) 1995-08-08
JP3259102B2 (ja) 2002-02-25
US5220838A (en) 1993-06-22

Similar Documents

Publication Publication Date Title
DE69216672D1 (de) Gegen Überlast geschützter Differenzdrucksensor und Verfahren zu seiner Herstellung
DE69313716D1 (de) Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung
DE69629283D1 (de) Ferroelektrischer dünnlagiger monomorpher verbundsensor und verfahren zu seiner herstellung
DE69320113D1 (de) Festkörper-Bildsensor und Verfahren zu seiner Herstellung
DE58904551D1 (de) Drucksensor und verfahren zu seiner herstellung.
ATA75394A (de) Optochemischer sensor sowie verfahren zu seiner herstellung
DE59000456D1 (de) Kapazitiver drucksensor und verfahren zu seiner herstellung.
DE59004578D1 (de) Drucksensor und Verfahren zu seiner Herstellung.
DE69306687T2 (de) Seitwärts empfindlicher Beschleunigungsmesser sowie Verfahren zu seiner Herstellung
DE59510288D1 (de) Dehnungsmessstreifen und Verfahren zu seiner Herstellung
DE68902534D1 (de) Kapazitiver beschleunigungsmesser und verfahren zu seiner herstellung.
DE69410071D1 (de) Gewindeelement und Verfahren zu seiner Herstellung
DE69729941D1 (de) Beschleunigungsmesselement sowie verfahren zu seiner herstellung
DE69509312T2 (de) Beschleunigungsmesser sowie Verfahren zu seiner Herstellung
DE69306314T2 (de) Winkelgeschwindigkeitsmessaufnehmer sowie Methode zu seiner Herstellung
DE69632388D1 (de) Elektronisches gerät und verfahren zu seiner herstellung
DE59405448D1 (de) Mikromechanisches Bauteil und Verfahren zu seiner Herstellung
DE69532174D1 (de) Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung
ATA155098A (de) Opto-chemischer sensor sowie verfahren zu seiner herstellung
DE58905475D1 (de) Drucksensor und Verfahren zu seiner Herstellung.
DE69407194T2 (de) Magnetoresistiver stromsensor und verfahren zu seiner herstellung
DE69625176T2 (de) Camptothecin-derivate und verfahren zu ihrer herstellung
DE69433156D1 (de) Varistor und Verfahren zu seiner Herstellung
DE69609627D1 (de) Beschleunigungssensor und verfahren zu seiner herstellung
DE69220697D1 (de) Optischer Sensor und Verfahren zu seiner Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee