DE69222913T2 - Nichtflüchtiger Speicher und Verfahren zu seiner Herstellung - Google Patents
Nichtflüchtiger Speicher und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69222913T2 DE69222913T2 DE69222913T DE69222913T DE69222913T2 DE 69222913 T2 DE69222913 T2 DE 69222913T2 DE 69222913 T DE69222913 T DE 69222913T DE 69222913 T DE69222913 T DE 69222913T DE 69222913 T2 DE69222913 T2 DE 69222913T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- volatile memory
- volatile
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/753,252 US5264384A (en) | 1991-08-30 | 1991-08-30 | Method of making a non-volatile memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69222913D1 DE69222913D1 (de) | 1997-12-04 |
DE69222913T2 true DE69222913T2 (de) | 1998-05-14 |
Family
ID=25029838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69222913T Expired - Fee Related DE69222913T2 (de) | 1991-08-30 | 1992-08-25 | Nichtflüchtiger Speicher und Verfahren zu seiner Herstellung |
Country Status (6)
Country | Link |
---|---|
US (3) | US5264384A (de) |
EP (1) | EP0530644B1 (de) |
JP (1) | JP3270530B2 (de) |
KR (1) | KR100293075B1 (de) |
DE (1) | DE69222913T2 (de) |
TW (1) | TW249285B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
US5264384A (en) * | 1991-08-30 | 1993-11-23 | Texas Instruments Incorporated | Method of making a non-volatile memory cell |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US7071060B1 (en) | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
EP1032034A1 (de) * | 1992-01-22 | 2000-08-30 | Macronix International Co., Ltd. | Verfahren zur Speicherbauelementherstellung |
US5349225A (en) * | 1993-04-12 | 1994-09-20 | Texas Instruments Incorporated | Field effect transistor with a lightly doped drain |
EP0655778A3 (de) * | 1993-11-25 | 1996-01-03 | Matsushita Electronics Corp | Verfahren zur Herstellung von Halbleiterspeicheranordnungen. |
EP0676816B1 (de) * | 1994-03-28 | 2001-10-04 | STMicroelectronics S.r.l. | Flash-EEPROM-Speicher-Matrix und Verfahren zur Vorspannung |
US5650340A (en) * | 1994-08-18 | 1997-07-22 | Sun Microsystems, Inc. | Method of making asymmetric low power MOS devices |
KR100192430B1 (ko) * | 1995-08-21 | 1999-06-15 | 구본준 | 비휘발성 메모리 및 이 비휘발성 메모리를 프로그램하는 방법 |
US5882970A (en) * | 1995-11-03 | 1999-03-16 | United Microelectronics Corporation | Method for fabricating flash memory cell having a decreased overlapped region between its source and gate |
IT1289540B1 (it) * | 1996-07-10 | 1998-10-15 | Sgs Thomson Microelectronics | Metodo per trasformare automaticamente la fabbricazione di una cella di memoria eprom nella fabbricazione di una cella di memoria |
KR100238199B1 (ko) * | 1996-07-30 | 2000-01-15 | 윤종용 | 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법 |
US5898202A (en) * | 1996-12-03 | 1999-04-27 | Advanced Micro Devices, Inc. | Selective spacer formation for optimized silicon area reduction |
US5926714A (en) * | 1996-12-03 | 1999-07-20 | Advanced Micro Devices, Inc. | Detached drain MOSFET |
US6020232A (en) * | 1996-12-03 | 2000-02-01 | Advanced Micro Devices, Inc. | Process of fabricating transistors having source and drain regions laterally displaced from the transistors gate |
US5900666A (en) * | 1996-12-03 | 1999-05-04 | Advanced Micro Devices, Inc. | Ultra-short transistor fabrication scheme for enhanced reliability |
US6060360A (en) * | 1997-04-14 | 2000-05-09 | Taiwan Semiconductor Manufacturing Company | Method of manufacture of P-channel EEprom and flash EEprom devices |
US6124610A (en) * | 1998-06-26 | 2000-09-26 | Advanced Micro Devices, Inc. | Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant |
US6245623B1 (en) * | 1998-11-06 | 2001-06-12 | Advanced Micro Devices, Inc. | CMOS semiconductor device containing N-channel transistor having shallow LDD junctions |
KR100278661B1 (ko) * | 1998-11-13 | 2001-02-01 | 윤종용 | 비휘발성 메모리소자 및 그 제조방법 |
JP2002184877A (ja) * | 2000-12-15 | 2002-06-28 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
US7012297B2 (en) * | 2001-08-30 | 2006-03-14 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US7075829B2 (en) | 2001-08-30 | 2006-07-11 | Micron Technology, Inc. | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
US7068544B2 (en) * | 2001-08-30 | 2006-06-27 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US7132711B2 (en) * | 2001-08-30 | 2006-11-07 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US7135734B2 (en) * | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US6784480B2 (en) * | 2002-02-12 | 2004-08-31 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6773990B1 (en) * | 2003-05-03 | 2004-08-10 | Advanced Micro Devices, Inc. | Method for reducing short channel effects in memory cells and related structure |
US7232729B1 (en) * | 2003-05-06 | 2007-06-19 | Spansion Llc | Method for manufacturing a double bitline implant |
JP4419699B2 (ja) * | 2004-06-16 | 2010-02-24 | ソニー株式会社 | 不揮発性半導体メモリ装置およびその動作方法 |
US20070099386A1 (en) * | 2005-10-31 | 2007-05-03 | International Business Machines Corporation | Integration scheme for high gain fet in standard cmos process |
JP4314252B2 (ja) | 2006-07-03 | 2009-08-12 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8344440B2 (en) * | 2008-02-25 | 2013-01-01 | Tower Semiconductor Ltd. | Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times |
US7859043B2 (en) * | 2008-02-25 | 2010-12-28 | Tower Semiconductor Ltd. | Three-terminal single poly NMOS non-volatile memory cell |
US7800156B2 (en) * | 2008-02-25 | 2010-09-21 | Tower Semiconductor Ltd. | Asymmetric single poly NMOS non-volatile memory cell |
US9305931B2 (en) | 2011-05-10 | 2016-04-05 | Jonker, Llc | Zero cost NVM cell using high voltage devices in analog process |
US9230814B2 (en) | 2011-10-28 | 2016-01-05 | Invensas Corporation | Non-volatile memory devices having vertical drain to gate capacitive coupling |
US8873302B2 (en) * | 2011-10-28 | 2014-10-28 | Invensas Corporation | Common doped region with separate gate control for a logic compatible non-volatile memory cell |
US11605438B2 (en) * | 2020-11-16 | 2023-03-14 | Ememory Technology Inc. | Memory device for improving weak-program or stuck bit |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5189108A (de) * | 1975-01-24 | 1976-08-04 | ||
JPS5315772A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Mis semiconductor device and its production |
US4163985A (en) * | 1977-09-30 | 1979-08-07 | The United States Of America As Represented By The Secretary Of The Air Force | Nonvolatile punch through memory cell with buried n+ region in channel |
US4288256A (en) * | 1977-12-23 | 1981-09-08 | International Business Machines Corporation | Method of making FET containing stacked gates |
JPS54140483A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Semiconductor device |
US4376947A (en) * | 1979-09-04 | 1983-03-15 | Texas Instruments Incorporated | Electrically programmable floating gate semiconductor memory device |
JPS57102073A (en) * | 1980-12-16 | 1982-06-24 | Mitsubishi Electric Corp | Semiconductor memory and manufacture thereof |
JPS5950561A (ja) * | 1982-09-17 | 1984-03-23 | Hitachi Ltd | 半導体集積回路装置 |
JPS59102498A (ja) * | 1982-12-02 | 1984-06-13 | Hitachi Zosen Corp | 湿潤スラツジの焼成装置 |
KR930007195B1 (ko) * | 1984-05-23 | 1993-07-31 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 장치와 그 제조 방법 |
JPS60247974A (ja) * | 1984-05-23 | 1985-12-07 | Toshiba Corp | 半導体装置 |
JPH0760864B2 (ja) * | 1984-07-13 | 1995-06-28 | 株式会社日立製作所 | 半導体集積回路装置 |
US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
EP0197501A3 (de) * | 1985-04-12 | 1986-12-17 | General Electric Company | Ausgedehntes Drain-Konzept für einen verminderten Hochgeschwindigkeitselektroneneffekt |
US4680603A (en) * | 1985-04-12 | 1987-07-14 | General Electric Company | Graded extended drain concept for reduced hot electron effect |
US4804637A (en) * | 1985-09-27 | 1989-02-14 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
JPS63140582A (ja) * | 1986-12-02 | 1988-06-13 | Toshiba Corp | 半導体装置及びその製造方法 |
US4835740A (en) * | 1986-12-26 | 1989-05-30 | Kabushiki Kaisha Toshiba | Floating gate type semiconductor memory device |
US4958321A (en) * | 1988-09-22 | 1990-09-18 | Advanced Micro Devices, Inc. | One transistor flash EPROM cell |
US5262987A (en) * | 1988-11-17 | 1993-11-16 | Seiko Instruments Inc. | Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation |
US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
JPH0783066B2 (ja) * | 1989-08-11 | 1995-09-06 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0770728B2 (ja) * | 1989-11-15 | 1995-07-31 | 三洋電機株式会社 | 半導体装置の製造方法 |
US5202576A (en) * | 1990-08-29 | 1993-04-13 | Texas Instruments Incorporated | Asymmetrical non-volatile memory cell, arrays and methods for fabricating same |
JP3111090B2 (ja) * | 1990-08-29 | 2000-11-20 | テキサス インスツルメンツ インコーポレイテツド | 不揮発性メモリセルを作製する方法 |
US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
US5264384A (en) * | 1991-08-30 | 1993-11-23 | Texas Instruments Incorporated | Method of making a non-volatile memory cell |
-
1991
- 1991-08-30 US US07/753,252 patent/US5264384A/en not_active Expired - Lifetime
-
1992
- 1992-08-25 EP EP92114459A patent/EP0530644B1/de not_active Expired - Lifetime
- 1992-08-25 DE DE69222913T patent/DE69222913T2/de not_active Expired - Fee Related
- 1992-08-28 JP JP23036092A patent/JP3270530B2/ja not_active Expired - Fee Related
- 1992-08-29 KR KR1019920015635A patent/KR100293075B1/ko not_active IP Right Cessation
-
1993
- 1993-02-18 TW TW082101120A patent/TW249285B/zh not_active IP Right Cessation
- 1993-05-24 US US08/066,816 patent/US5482880A/en not_active Expired - Lifetime
-
1995
- 1995-08-28 US US08/520,350 patent/US5646430A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100293075B1 (ko) | 2001-09-17 |
JPH06204488A (ja) | 1994-07-22 |
EP0530644A3 (en) | 1993-08-04 |
DE69222913D1 (de) | 1997-12-04 |
EP0530644B1 (de) | 1997-10-29 |
US5264384A (en) | 1993-11-23 |
EP0530644A2 (de) | 1993-03-10 |
TW249285B (de) | 1995-06-11 |
US5482880A (en) | 1996-01-09 |
JP3270530B2 (ja) | 2002-04-02 |
US5646430A (en) | 1997-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |