DE69224788D1 - Verfahren zur Herstellung einer Festkoerper- Bildaufnahmevorrichtung - Google Patents

Verfahren zur Herstellung einer Festkoerper- Bildaufnahmevorrichtung

Info

Publication number
DE69224788D1
DE69224788D1 DE69224788T DE69224788T DE69224788D1 DE 69224788 D1 DE69224788 D1 DE 69224788D1 DE 69224788 T DE69224788 T DE 69224788T DE 69224788 T DE69224788 T DE 69224788T DE 69224788 D1 DE69224788 D1 DE 69224788D1
Authority
DE
Germany
Prior art keywords
manufacturing
imaging device
solid state
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224788T
Other languages
English (en)
Other versions
DE69224788T2 (de
Inventor
Toru Nonura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE69224788D1 publication Critical patent/DE69224788D1/de
Application granted granted Critical
Publication of DE69224788T2 publication Critical patent/DE69224788T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
DE69224788T 1991-10-31 1992-06-30 Verfahren zur Herstellung einer Festkoerper- Bildaufnahmevorrichtung Expired - Fee Related DE69224788T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28591291 1991-10-31

Publications (2)

Publication Number Publication Date
DE69224788D1 true DE69224788D1 (de) 1998-04-23
DE69224788T2 DE69224788T2 (de) 1998-07-09

Family

ID=17697630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224788T Expired - Fee Related DE69224788T2 (de) 1991-10-31 1992-06-30 Verfahren zur Herstellung einer Festkoerper- Bildaufnahmevorrichtung

Country Status (4)

Country Link
US (2) US5321249A (de)
EP (1) EP0539658B1 (de)
KR (1) KR960016178B1 (de)
DE (1) DE69224788T2 (de)

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JP3067435B2 (ja) * 1992-12-24 2000-07-17 キヤノン株式会社 画像読取用光電変換装置及び該装置を有する画像処理装置
DE69409655T2 (de) * 1993-09-17 1998-08-06 Polaroid Corp Herstellung von mikrolinsen auf festkörper-bildaufnehmer
US5708264A (en) * 1995-11-07 1998-01-13 Eastman Kodak Company Planar color filter array for CCDs from dyed and mordant layers
US5677202A (en) * 1995-11-20 1997-10-14 Eastman Kodak Company Method for making planar color filter array for image sensors with embedded color filter arrays
US6211916B1 (en) * 1996-03-11 2001-04-03 Eastman Kodak Company Solid state imager with inorganic lens array
US5734190A (en) * 1996-03-11 1998-03-31 Eastman Kodak Company Imager having a plurality of cylindrical lenses
US5824236A (en) * 1996-03-11 1998-10-20 Eastman Kodak Company Method for forming inorganic lens array for solid state imager
US5711890A (en) * 1996-03-11 1998-01-27 Eastman Kodak Company Method for forming cylindrical lens arrays for solid state imager
US5756239A (en) * 1996-12-12 1998-05-26 Eastman Kodak Company Method of forming a color filter array with improved resolution
TW370727B (en) * 1998-06-04 1999-09-21 United Microelectronics Corp Method for removing color filter films of CMOS sensor
TW400657B (en) * 1998-06-09 2000-08-01 United Microelectronics Corp The manufacture method of CMOS sensor device
US6297071B1 (en) 1998-07-22 2001-10-02 Eastman Kodak Company Method of making planar image sensor color filter arrays
US6495813B1 (en) 1999-10-12 2002-12-17 Taiwan Semiconductor Manufacturing Company Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process
KR100382723B1 (ko) * 2000-11-13 2003-05-09 삼성전자주식회사 고체촬상소자 및 그 제조방법
US20020084407A1 (en) * 2000-12-28 2002-07-04 Xerox Corporation Systems and methods for fabricating an electro-optical device used for image sensing
TW540157B (en) * 2001-05-31 2003-07-01 Konishiroku Photo Ind CMOS image sensor
FR2829876B1 (fr) * 2001-09-18 2004-07-02 St Microelectronics Sa Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6861280B2 (en) * 2002-10-25 2005-03-01 Omnivision International Holding Ltd Image sensor having micro-lenses with integrated color filter and method of making
KR100560309B1 (ko) * 2003-12-31 2006-03-14 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법
JP4882224B2 (ja) * 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
WO2006085528A1 (ja) * 2005-02-10 2006-08-17 Toppan Printing Co., Ltd. 固体撮像素子及びその製造方法
KR101304263B1 (ko) * 2005-06-03 2013-09-05 후지필름 가부시키가이샤 안료함유 열경화성 조성물, 및, 컬러필터, 화상기록재료,및, 컬러필터의 제조방법
US7799491B2 (en) * 2006-04-07 2010-09-21 Aptina Imaging Corp. Color filter array and imaging device containing such color filter array and method of fabrication
KR100823031B1 (ko) * 2006-12-21 2008-04-17 동부일렉트로닉스 주식회사 이미지 센서 제조방법
JP2008241744A (ja) * 2007-03-23 2008-10-09 Fujifilm Corp カラーフィルタの製造方法
US9570491B2 (en) 2014-10-08 2017-02-14 Omnivision Technologies, Inc. Dual-mode image sensor with a signal-separating color filter array, and method for same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236098A (en) * 1979-08-20 1980-11-25 Eastman Kodak Company Solid-state color imaging devices
US4357415A (en) * 1980-03-06 1982-11-02 Eastman Kodak Company Method of making a solid-state color imaging device having a color filter array using a photocrosslinkable barrier
US4416961A (en) * 1980-09-11 1983-11-22 Eastman Kodak Company Color imaging devices and color filter arrays using photo-bleachable dyes
JPS58219748A (ja) * 1982-06-15 1983-12-21 Toshiba Corp 半導体装置
US4827118A (en) * 1986-07-10 1989-05-02 Minolta Camera Kabushiki Kaisha Light-sensitive device having color filter and manufacturing method thereof
JPS63204486A (ja) * 1987-02-20 1988-08-24 Mitsubishi Electric Corp 文字入力装置
JPS63250316A (ja) * 1987-04-07 1988-10-18 Nitto Koryo Kk 浴用剤
JPS63290802A (ja) * 1987-05-25 1988-11-28 Dai Ichi Kogyo Seiyaku Co Ltd 水系水中防汚剤
JPS63304675A (ja) * 1987-06-04 1988-12-12 Mitsubishi Electric Corp 半導体素子装置
JPH0296372A (ja) * 1988-09-30 1990-04-09 Fujitsu Ltd カラー固体撮像素子の製造方法
US5124543A (en) * 1989-08-09 1992-06-23 Ricoh Company, Ltd. Light emitting element, image sensor and light receiving element with linearly varying waveguide index
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0485960A (ja) * 1990-07-30 1992-03-18 Toshiba Corp 固体撮像装置及びその製造方法
JPH05167054A (ja) * 1991-12-19 1993-07-02 Toshiba Corp 固体撮像装置の製造方法

Also Published As

Publication number Publication date
KR960016178B1 (ko) 1996-12-04
EP0539658B1 (de) 1998-03-18
US5321249A (en) 1994-06-14
KR930009375A (ko) 1993-05-22
EP0539658A1 (de) 1993-05-05
DE69224788T2 (de) 1998-07-09
US5336367A (en) 1994-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8339 Ceased/non-payment of the annual fee