DE69224993D1 - Resistives speicherelement - Google Patents

Resistives speicherelement

Info

Publication number
DE69224993D1
DE69224993D1 DE69224993T DE69224993T DE69224993D1 DE 69224993 D1 DE69224993 D1 DE 69224993D1 DE 69224993 T DE69224993 T DE 69224993T DE 69224993 T DE69224993 T DE 69224993T DE 69224993 D1 DE69224993 D1 DE 69224993D1
Authority
DE
Germany
Prior art keywords
memory element
resistive memory
resistive
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69224993T
Other languages
English (en)
Inventor
Mervyn Rose
Janos Hajto
Alan Owen
Ian Osborne
Anthony Snell
Peter Lecomber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Dundee
Original Assignee
University of Dundee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Dundee filed Critical University of Dundee
Application granted granted Critical
Publication of DE69224993D1 publication Critical patent/DE69224993D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Neurology (AREA)
  • Semiconductor Memories (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE69224993T 1991-10-22 1992-10-20 Resistives speicherelement Expired - Lifetime DE69224993D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919122362A GB9122362D0 (en) 1991-10-22 1991-10-22 Resistive memory element
PCT/GB1992/001929 WO1993008575A1 (en) 1991-10-22 1992-10-20 Resistive memory element

Publications (1)

Publication Number Publication Date
DE69224993D1 true DE69224993D1 (de) 1998-05-07

Family

ID=10703312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224993T Expired - Lifetime DE69224993D1 (de) 1991-10-22 1992-10-20 Resistives speicherelement

Country Status (6)

Country Link
US (1) US5541869A (de)
EP (1) EP0610278B1 (de)
JP (1) JP3256233B2 (de)
DE (1) DE69224993D1 (de)
GB (1) GB9122362D0 (de)
WO (1) WO1993008575A1 (de)

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US6487106B1 (en) 1999-01-12 2002-11-26 Arizona Board Of Regents Programmable microelectronic devices and method of forming and programming same
US6825489B2 (en) 2001-04-06 2004-11-30 Axon Technologies Corporation Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
US6635914B2 (en) 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US20030107105A1 (en) * 1999-08-31 2003-06-12 Kozicki Michael N. Programmable chip-to-substrate interconnect structure and device and method of forming same
US7675766B2 (en) * 2000-02-11 2010-03-09 Axon Technologies Corporation Microelectric programmable device and methods of forming and programming the same
US6683322B2 (en) 2002-03-01 2004-01-27 Hewlett-Packard Development Company, L.P. Flexible hybrid memory element
US7326979B2 (en) * 2002-08-02 2008-02-05 Unity Semiconductor Corporation Resistive memory device with a treated interface
US6813177B2 (en) * 2002-12-13 2004-11-02 Ovoynx, Inc. Method and system to store information
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US7084691B2 (en) * 2004-07-21 2006-08-01 Sharp Laboratories Of America, Inc. Mono-polarity switchable PCMO resistor trimmer
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US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7542338B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
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US10134985B2 (en) 2006-10-20 2018-11-20 The Regents Of The University Of Michigan Non-volatile solid state resistive switching devices
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US8071972B2 (en) 2008-10-20 2011-12-06 The Regents Of The University Of Michigan Silicon based nanoscale crossbar memory
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US8213243B2 (en) 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
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US8198144B2 (en) 2010-06-11 2012-06-12 Crossbar, Inc. Pillar structure for memory device and method
US8441835B2 (en) 2010-06-11 2013-05-14 Crossbar, Inc. Interface control for improved switching in RRAM
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US8467227B1 (en) 2010-11-04 2013-06-18 Crossbar, Inc. Hetero resistive switching material layer in RRAM device and method
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US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US9401475B1 (en) 2010-08-23 2016-07-26 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8889521B1 (en) 2012-09-14 2014-11-18 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8404553B2 (en) 2010-08-23 2013-03-26 Crossbar, Inc. Disturb-resistant non-volatile memory device and method
US8492195B2 (en) 2010-08-23 2013-07-23 Crossbar, Inc. Method for forming stackable non-volatile resistive switching memory devices
US8391049B2 (en) 2010-09-29 2013-03-05 Crossbar, Inc. Resistor structure for a non-volatile memory device and method
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US8088688B1 (en) 2010-11-05 2012-01-03 Crossbar, Inc. p+ polysilicon material on aluminum for non-volatile memory device and method
US8930174B2 (en) 2010-12-28 2015-01-06 Crossbar, Inc. Modeling technique for resistive random access memory (RRAM) cells
US8815696B1 (en) 2010-12-31 2014-08-26 Crossbar, Inc. Disturb-resistant non-volatile memory device using via-fill and etchback technique
US9153623B1 (en) 2010-12-31 2015-10-06 Crossbar, Inc. Thin film transistor steering element for a non-volatile memory device
US8791010B1 (en) 2010-12-31 2014-07-29 Crossbar, Inc. Silver interconnects for stacked non-volatile memory device and method
US9053766B2 (en) 2011-03-03 2015-06-09 Sandisk 3D, Llc Three dimensional memory system with intelligent select circuit
US8374051B2 (en) 2011-03-03 2013-02-12 Sandisk 3D Llc Three dimensional memory system with column pipeline
US8553476B2 (en) 2011-03-03 2013-10-08 Sandisk 3D Llc Three dimensional memory system with page of data across word lines
JP5439420B2 (ja) * 2011-03-22 2014-03-12 株式会社東芝 記憶装置
US8699293B2 (en) 2011-04-27 2014-04-15 Sandisk 3D Llc Non-volatile storage system with dual block programming
US8450710B2 (en) 2011-05-27 2013-05-28 Crossbar, Inc. Low temperature p+ silicon junction material for a non-volatile memory device
US8394670B2 (en) 2011-05-31 2013-03-12 Crossbar, Inc. Vertical diodes for non-volatile memory device
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US8659929B2 (en) 2011-06-30 2014-02-25 Crossbar, Inc. Amorphous silicon RRAM with non-linear device and operation
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
CN103828047A (zh) 2011-07-22 2014-05-28 科洛斯巴股份有限公司 用于非易失性存储器装置的p+硅锗材料的种子层及方法
US8674724B2 (en) 2011-07-29 2014-03-18 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
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US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
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US9312483B2 (en) 2012-09-24 2016-04-12 Crossbar, Inc. Electrode structure for a non-volatile memory device and method
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US11068620B2 (en) 2012-11-09 2021-07-20 Crossbar, Inc. Secure circuit integrated with memory layer
US8982647B2 (en) 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
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US5335219A (en) * 1991-01-18 1994-08-02 Ovshinsky Stanford R Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements

Also Published As

Publication number Publication date
JPH07503332A (ja) 1995-04-06
WO1993008575A1 (en) 1993-04-29
JP3256233B2 (ja) 2002-02-12
US5541869A (en) 1996-07-30
GB9122362D0 (en) 1991-12-04
EP0610278B1 (de) 1998-04-01
EP0610278A1 (de) 1994-08-17

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Legal Events

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8332 No legal effect for de