DE69232236D1 - Halbleiter-sensor und seine herstellungsmethode - Google Patents

Halbleiter-sensor und seine herstellungsmethode

Info

Publication number
DE69232236D1
DE69232236D1 DE69232236T DE69232236T DE69232236D1 DE 69232236 D1 DE69232236 D1 DE 69232236D1 DE 69232236 T DE69232236 T DE 69232236T DE 69232236 T DE69232236 T DE 69232236T DE 69232236 D1 DE69232236 D1 DE 69232236D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor sensor
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69232236T
Other languages
English (en)
Other versions
DE69232236T2 (de
Inventor
Ichiro Shibasaki
Naohiro Kuze
Tatsuro Iwabuchi
Kazuhiro Nagase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Publication of DE69232236D1 publication Critical patent/DE69232236D1/de
Application granted granted Critical
Publication of DE69232236T2 publication Critical patent/DE69232236T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
DE69232236T 1991-07-16 1992-07-16 Halbleiter-sensor und seine herstellungsmethode Expired - Lifetime DE69232236T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17534991 1991-07-16
PCT/JP1992/000908 WO1993002479A1 (en) 1991-07-16 1992-07-16 Semiconductor sensor and its manufacturing method

Publications (2)

Publication Number Publication Date
DE69232236D1 true DE69232236D1 (de) 2002-01-10
DE69232236T2 DE69232236T2 (de) 2002-08-08

Family

ID=15994519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232236T Expired - Lifetime DE69232236T2 (de) 1991-07-16 1992-07-16 Halbleiter-sensor und seine herstellungsmethode

Country Status (5)

Country Link
US (1) US5453727A (de)
EP (1) EP0548375B1 (de)
KR (1) KR960001197B1 (de)
DE (1) DE69232236T2 (de)
WO (1) WO1993002479A1 (de)

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CN100367526C (zh) 2001-10-01 2008-02-06 旭化成电子材料元件株式会社 霍尔器件和磁传感器
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US20060246692A1 (en) * 2003-02-26 2006-11-02 Yoshihiko Shibata Semiconductor sensor and method for manufacturing same
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JPWO2006070826A1 (ja) * 2004-12-28 2008-08-07 旭化成エレクトロニクス株式会社 磁気方式回転角センサ、および、角度情報処理装置
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WO2008066118A1 (ja) * 2006-11-30 2008-06-05 Asahi Kasei Kabushiki Kaisha 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法
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US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US8093559B1 (en) * 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
US8486755B2 (en) * 2008-12-05 2013-07-16 Allegro Microsystems, Llc Magnetic field sensors and methods for fabricating the magnetic field sensors
US20100188078A1 (en) * 2009-01-28 2010-07-29 Andrea Foletto Magnetic sensor with concentrator for increased sensing range
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
JP6055596B2 (ja) * 2012-01-17 2016-12-27 旭化成エレクトロニクス株式会社 ホール素子
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10215550B2 (en) 2012-05-01 2019-02-26 Allegro Microsystems, Llc Methods and apparatus for magnetic sensors having highly uniform magnetic fields
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US10725100B2 (en) 2013-03-15 2020-07-28 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an externally accessible coil
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US10712403B2 (en) 2014-10-31 2020-07-14 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
JP6676308B2 (ja) * 2015-08-07 2020-04-08 ローム株式会社 半導体装置
JP2017037900A (ja) * 2015-08-07 2017-02-16 ローム株式会社 半導体装置およびその製造方法
JP6586682B2 (ja) * 2015-09-01 2019-10-09 ローム株式会社 磁電変換素子およびその製造方法
CN105261698A (zh) * 2015-09-30 2016-01-20 苏州矩阵光电有限公司 一种霍尔元件及其制备方法
US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
US10128434B2 (en) * 2016-12-09 2018-11-13 Rohm Co., Ltd. Hall element module
CN106784301B (zh) * 2016-12-27 2019-04-23 陕西科技大学 一种高稳定霍尔元件及其制备方法
CN106784302B (zh) * 2016-12-27 2019-04-02 陕西科技大学 一种基于柔性基板的高稳定霍尔元件及其制备方法
CN107132497B (zh) * 2017-04-28 2020-05-12 西安工业大学 用于无损检测半导体薄膜霍尔效应的基片及其制备方法
US10310028B2 (en) 2017-05-26 2019-06-04 Allegro Microsystems, Llc Coil actuated pressure sensor
US10837943B2 (en) 2017-05-26 2020-11-17 Allegro Microsystems, Llc Magnetic field sensor with error calculation
US10641842B2 (en) 2017-05-26 2020-05-05 Allegro Microsystems, Llc Targets for coil actuated position sensors
US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
US10996289B2 (en) 2017-05-26 2021-05-04 Allegro Microsystems, Llc Coil actuated position sensor with reflected magnetic field
US11428755B2 (en) 2017-05-26 2022-08-30 Allegro Microsystems, Llc Coil actuated sensor with sensitivity detection
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
US11255700B2 (en) 2018-08-06 2022-02-22 Allegro Microsystems, Llc Magnetic field sensor
US10921391B2 (en) 2018-08-06 2021-02-16 Allegro Microsystems, Llc Magnetic field sensor with spacer
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US11061084B2 (en) 2019-03-07 2021-07-13 Allegro Microsystems, Llc Coil actuated pressure sensor and deflectable substrate
US10955306B2 (en) 2019-04-22 2021-03-23 Allegro Microsystems, Llc Coil actuated pressure sensor and deformable substrate
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Also Published As

Publication number Publication date
EP0548375A4 (en) 1994-11-09
EP0548375B1 (de) 2001-11-28
KR960001197B1 (ko) 1996-01-19
EP0548375A1 (de) 1993-06-30
DE69232236T2 (de) 2002-08-08
WO1993002479A1 (en) 1993-02-04
US5453727A (en) 1995-09-26

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