DE69232575D1 - Kupferfilm-überzogene Substrate und Verfahren zur Herstellung eines Kupferfilmes auf einem Substrat - Google Patents

Kupferfilm-überzogene Substrate und Verfahren zur Herstellung eines Kupferfilmes auf einem Substrat

Info

Publication number
DE69232575D1
DE69232575D1 DE69232575T DE69232575T DE69232575D1 DE 69232575 D1 DE69232575 D1 DE 69232575D1 DE 69232575 T DE69232575 T DE 69232575T DE 69232575 T DE69232575 T DE 69232575T DE 69232575 D1 DE69232575 D1 DE 69232575D1
Authority
DE
Germany
Prior art keywords
copper film
substrate
making
coated substrates
film coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232575T
Other languages
English (en)
Other versions
DE69232575T2 (de
Inventor
Akinori Ebe
Kiyoshi Ogata
Satoshi Nishiyama
Naoto Kuratani
Taizo Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07038992A external-priority patent/JP3227768B2/ja
Priority claimed from JP6623992A external-priority patent/JPH05271902A/ja
Priority claimed from JP8429992A external-priority patent/JPH05287506A/ja
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE69232575D1 publication Critical patent/DE69232575D1/de
Publication of DE69232575T2 publication Critical patent/DE69232575T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
DE1992632575 1992-02-20 1992-06-05 Kupferfilm-überzogene Substrate und Verfahren zur Herstellung eines Kupferfilmes auf einem Substrat Expired - Fee Related DE69232575T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP07038992A JP3227768B2 (ja) 1992-02-20 1992-02-20 銅薄膜の結晶配向制御方法
JP6623992A JPH05271902A (ja) 1992-03-24 1992-03-24 Ｃｕ薄膜の形成方法
JP8429992A JPH05287506A (ja) 1992-04-07 1992-04-07 銅膜被覆基体

Publications (2)

Publication Number Publication Date
DE69232575D1 true DE69232575D1 (de) 2002-05-29
DE69232575T2 DE69232575T2 (de) 2002-08-08

Family

ID=27299060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992632575 Expired - Fee Related DE69232575T2 (de) 1992-02-20 1992-06-05 Kupferfilm-überzogene Substrate und Verfahren zur Herstellung eines Kupferfilmes auf einem Substrat

Country Status (3)

Country Link
US (2) US5316802A (de)
EP (1) EP0565766B1 (de)
DE (1) DE69232575T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686733A (en) * 1996-03-29 1997-11-11 Mcgill University Megavoltage imaging method using a combination of a photoreceptor with a high energy photon converter and intensifier
US6197134B1 (en) 1997-01-08 2001-03-06 Dowa Mining Co., Ltd. Processes for producing fcc metals
JP3403918B2 (ja) * 1997-06-02 2003-05-06 株式会社ジャパンエナジー 高純度銅スパッタリングタ−ゲットおよび薄膜
GB2331765A (en) 1997-12-01 1999-06-02 Cambridge Display Tech Ltd Sputter deposition onto organic material using neon as the discharge gas
US6140235A (en) * 1997-12-05 2000-10-31 Applied Materials, Inc. High pressure copper fill at low temperature
US6331490B1 (en) * 1998-03-13 2001-12-18 Semitool, Inc. Process for etching thin-film layers of a workpiece used to form microelectric circuits or components
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US6605321B1 (en) * 2000-07-20 2003-08-12 Centre National De La Recherche Scientifique (Cnrs) Method of treating materials by irradiation
US6495436B2 (en) 2001-02-09 2002-12-17 Micron Technology, Inc. Formation of metal oxide gate dielectric
KR20040026733A (ko) * 2002-09-25 2004-04-01 주식회사 피앤아이 표면개질된 모재와의 접착력이 향상된 후막 형성 방법 및그의 장치
US7077889B2 (en) * 2003-04-04 2006-07-18 Intelligent Engery, Inc. Surface modification of porous metal substrates
JP5352542B2 (ja) 2010-07-15 2013-11-27 エル エス エムトロン リミテッド リチウム二次電池の集電体用銅箔
US10147697B1 (en) 2017-12-15 2018-12-04 Nxp Usa, Inc. Bond pad structure for semiconductor device packaging

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547700A (fr) * 1967-10-18 1968-11-29 Comp Generale Electricite Perfectionnement à l'adhérence des dépôts métalliques sur une surface constituée par un matériau synthétique
US4086082A (en) * 1976-04-16 1978-04-25 Shalom Mahalla Copper crystal and process
US4720401A (en) * 1985-01-11 1988-01-19 International Business Machines Corporation Enhanced adhesion between metals and polymers
JP2597352B2 (ja) * 1985-06-20 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 金属−有機基板間の接着力を改善する方法
JPH079069B2 (ja) * 1986-03-12 1995-02-01 ブラザー工業株式会社 機械的性質の優れた銅被膜の形成方法
US4695348A (en) * 1986-09-15 1987-09-22 Psi Star Copper etching process and product
US4886681A (en) * 1987-01-20 1989-12-12 International Business Machines Corporation Metal-polymer adhesion by low energy bombardment
JPS6475663A (en) * 1987-09-17 1989-03-22 Kobe Steel Ltd Cu plated material having high corrosion resistance and production thereof
GB8817664D0 (en) * 1988-07-25 1988-09-01 Ici Plc Polymeric films
US5087476A (en) * 1989-03-17 1992-02-11 Matsushita Electric Industrial Co., Ltd. Method of producing thin film
US4975327A (en) * 1989-07-11 1990-12-04 Minnesota Mining And Manufacturing Company Polyimide substrate having a textured surface and metallizing such a substrate
JP3413181B2 (ja) * 2001-08-03 2003-06-03 川崎重工業株式会社 連続熱間圧延設備

Also Published As

Publication number Publication date
DE69232575T2 (de) 2002-08-08
EP0565766A3 (en) 1995-08-23
US5501911A (en) 1996-03-26
EP0565766B1 (de) 2002-04-24
EP0565766A2 (de) 1993-10-20
US5316802A (en) 1994-05-31

Similar Documents

Publication Publication Date Title
DE69226603T3 (de) Mit einer Antireflexionszusammensetzung überzogenes Substrat und Verfahren zur Behandlung eines solchen Substrats.
DE69209896D1 (de) Verfahren zur Herstellung degradierter Beschichtung auf einem Substrat
ATA904683A (de) Verfahren zur herstellung eines abtriebfesten ueberzugs auf einem festen substrat und danach hergestellte gegenstaende
DE69333152D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69331815T2 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69232575D1 (de) Kupferfilm-überzogene Substrate und Verfahren zur Herstellung eines Kupferfilmes auf einem Substrat
DE69232607D1 (de) Verfahren zur Beschichtung eines Substrates mit einem Kiesel-Vorprodukt
DE69305939D1 (de) Verfahren zur Herstellung eines keramischen Schaltungssubstrates
DE69331816T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69220892T2 (de) Verfahren zur Herstellung eines mehrschichtigen Polyimid-Verdrahtungssubstrats
DE69412952T2 (de) Verbindungsteil eines Schaltungssubstrats und Verfahren zur Herstellung mehrschichtiger Schaltungssubstrate unter Verwendung dieses Teils
DE69528836T2 (de) Vorrichtung und verfahren zur herstellung von gleichen dünnen beschichtungen auf breiten substraten
DE69531854D1 (de) Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
DE69426791T2 (de) Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats
DE69433375D1 (de) Verfahren zur Herstellung eines Dünnschichtmusters
DE69306600T2 (de) Verfahren zur Herstellung eines mehrschichtigen Leitersubstrats
DE69309358D1 (de) Verfahren zur Herstellung eines Schaltungssubstrats
DE69801382T2 (de) Verfahren zur herstellung einer Beschichtung von monomolekulares Dicke auf einem Substrat
DE69209488D1 (de) Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters
DE4396402T1 (de) Werkstoff und Verfahren zur Herstellung einer Schutzbeschichtung auf einem Substrat aus einer Kupferbasis-Legierung
DE69318404D1 (de) Verfahren zum beschichten eines substrats mit einem silicon- und zirconium-enthaltenden lack
DE69233225D1 (de) Substrat für Dünnschichtschaltung und Verfahren zur Herstellung desselben
DE69600317D1 (de) Verfahren zur Herstellung eines Films auf einem keramischen Substrat
DE69218555D1 (de) Vorrichtung und Verfahren zur Herstellung eines Substrates für Informationsträger
DE69510906D1 (de) Verfahren zur Herstellung einer unlöslichen Beschichtung auf einem Substrat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee