DE69232740T2 - Spannungsvariabler kondensator - Google Patents

Spannungsvariabler kondensator

Info

Publication number
DE69232740T2
DE69232740T2 DE69232740T DE69232740T DE69232740T2 DE 69232740 T2 DE69232740 T2 DE 69232740T2 DE 69232740 T DE69232740 T DE 69232740T DE 69232740 T DE69232740 T DE 69232740T DE 69232740 T2 DE69232740 T2 DE 69232740T2
Authority
DE
Germany
Prior art keywords
variable capacitor
voltage variable
voltage
capacitor
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232740T
Other languages
English (en)
Other versions
DE69232740D1 (de
Inventor
D Cornett
S Ramakrishnan
H Shapiro
M Caldwell
Wei-Yean Howng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69232740D1 publication Critical patent/DE69232740D1/de
Application granted granted Critical
Publication of DE69232740T2 publication Critical patent/DE69232740T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
DE69232740T 1991-10-15 1992-10-15 Spannungsvariabler kondensator Expired - Fee Related DE69232740T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/776,111 US5173835A (en) 1991-10-15 1991-10-15 Voltage variable capacitor
PCT/US1992/008781 WO1993008578A1 (en) 1991-10-15 1992-10-15 Voltage variable capacitor

Publications (2)

Publication Number Publication Date
DE69232740D1 DE69232740D1 (de) 2002-09-26
DE69232740T2 true DE69232740T2 (de) 2002-12-05

Family

ID=25106486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232740T Expired - Fee Related DE69232740T2 (de) 1991-10-15 1992-10-15 Spannungsvariabler kondensator

Country Status (7)

Country Link
US (1) US5173835A (de)
EP (1) EP0608376B1 (de)
JP (1) JP2853332B2 (de)
KR (2) KR0134980B1 (de)
DE (1) DE69232740T2 (de)
ES (1) ES2181679T3 (de)
WO (1) WO1993008578A1 (de)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10338277A1 (de) * 2003-08-20 2005-03-17 Siemens Ag Organischer Kondensator mit spannungsgesteuerter Kapazität
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

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JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5587870A (en) * 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
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US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5495208A (en) * 1994-04-04 1996-02-27 Motorola, Inc. Wide band tunable and modulatable reference oscillator
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US5600187A (en) * 1994-06-27 1997-02-04 General Electric Company Electronically controllable capacitors using power MOSFET's
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US5673001A (en) * 1995-06-07 1997-09-30 Motorola, Inc. Method and apparatus for amplifying a signal
US5888585A (en) * 1996-02-08 1999-03-30 Symetrix Corporation Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide
JP3161333B2 (ja) * 1996-07-22 2001-04-25 日本電気株式会社 半導体装置およびその製造方法
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US6841439B1 (en) * 1997-07-24 2005-01-11 Texas Instruments Incorporated High permittivity silicate gate dielectric
US7115461B2 (en) * 1997-07-24 2006-10-03 Texas Instruments Incorporated High permittivity silicate gate dielectric
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DE10061286C1 (de) * 2000-12-08 2002-04-04 Hollingsworth Gmbh Vorrichtung zum Aufziehen einer Kardiergarnitur
DE10061299A1 (de) * 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
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DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002078052A2 (de) * 2001-03-26 2002-10-03 Siemens Aktiengesellschaft Gerät mit zumindest zwei organischen elektronischen bauteilen und verfahren zur herstellung dazu
DE10126859A1 (de) * 2001-06-01 2002-12-12 Siemens Ag Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
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DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10338277A1 (de) * 2003-08-20 2005-03-17 Siemens Ag Organischer Kondensator mit spannungsgesteuerter Kapazität
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Also Published As

Publication number Publication date
KR940703070A (ko) 1994-09-17
KR0134980B1 (ko) 1998-05-15
DE69232740D1 (de) 2002-09-26
EP0608376B1 (de) 2002-08-21
ES2181679T3 (es) 2003-03-01
WO1993008578A1 (en) 1993-04-29
EP0608376A4 (de) 1994-12-07
JPH07500457A (ja) 1995-01-12
JP2853332B2 (ja) 1999-02-03
EP0608376A1 (de) 1994-08-03
US5173835A (en) 1992-12-22

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