DE69233028D1 - Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem - Google Patents

Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem

Info

Publication number
DE69233028D1
DE69233028D1 DE69233028T DE69233028T DE69233028D1 DE 69233028 D1 DE69233028 D1 DE 69233028D1 DE 69233028 T DE69233028 T DE 69233028T DE 69233028 T DE69233028 T DE 69233028T DE 69233028 D1 DE69233028 D1 DE 69233028D1
Authority
DE
Germany
Prior art keywords
operations
write
same
erase
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233028T
Other languages
English (en)
Other versions
DE69233028T2 (de
Inventor
Tomoharu Tanaka
Masaki Momodomi
Hideo Kato
Hiroto Nakai
Yoshiyuki Tanaka
Riichiro Shirota
Seiichi Aritome
Yasuo Itoh
Yoshihisa Iwata
Hiroshi Nakamura
Hideko Odaira
Yutaka Okamoto
Masamichi Asano
Kaoru Tokushige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27551410&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69233028(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69233028D1 publication Critical patent/DE69233028D1/de
Publication of DE69233028T2 publication Critical patent/DE69233028T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
DE69233028T 1991-12-19 1992-12-21 Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem Expired - Lifetime DE69233028T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP35487191 1991-12-19
JP34320091 1991-12-25
JP8608292 1992-03-10
JP7794692 1992-03-31
JP10583192 1992-03-31
JP17569392 1992-07-02

Publications (2)

Publication Number Publication Date
DE69233028D1 true DE69233028D1 (de) 2003-06-05
DE69233028T2 DE69233028T2 (de) 2003-12-04

Family

ID=27551410

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233028T Expired - Lifetime DE69233028T2 (de) 1991-12-19 1992-12-21 Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem

Country Status (4)

Country Link
US (8) US5361227A (de)
EP (4) EP1315171A3 (de)
KR (1) KR960001323B1 (de)
DE (1) DE69233028T2 (de)

Families Citing this family (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69034191T2 (de) 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
JP3373632B2 (ja) * 1993-03-31 2003-02-04 株式会社東芝 不揮発性半導体記憶装置
US6240018B1 (en) 1993-03-31 2001-05-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having verify function
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
US6091639A (en) * 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
JPH07312084A (ja) * 1994-05-18 1995-11-28 Toshiba Corp キャッシュメモリ内蔵メモリ装置
JP3584494B2 (ja) * 1994-07-25 2004-11-04 ソニー株式会社 半導体不揮発性記憶装置
JP3199989B2 (ja) * 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法
US5954828A (en) * 1995-01-05 1999-09-21 Macronix International Co., Ltd. Non-volatile memory device for fault tolerant data
JP2692638B2 (ja) * 1995-03-31 1997-12-17 日本電気株式会社 不揮発性半導体メモリ
JP3782840B2 (ja) 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
KR0164803B1 (ko) * 1995-07-15 1999-02-01 김광호 불휘발성 반도체메모리의 센스앰프
KR0172533B1 (ko) * 1995-10-18 1999-03-30 김주용 플래쉬 메모리 장치
JP3941149B2 (ja) * 1996-12-03 2007-07-04 ソニー株式会社 半導体不揮発性記憶装置
KR100244864B1 (ko) * 1996-03-18 2000-03-02 니시무로 타이죠 불휘발성 반도체 기억 장치
JPH1064288A (ja) * 1996-08-23 1998-03-06 Nec Ic Microcomput Syst Ltd フラッシュ消去型不揮発性メモリ及びその消去方法
US6839875B2 (en) * 1996-10-18 2005-01-04 Micron Technology, Inc. Method and apparatus for performing error correction on data read from a multistate memory
US7805756B2 (en) * 1996-11-29 2010-09-28 Frampton E Ellis Microchips with inner firewalls, faraday cages, and/or photovoltaic cells
JP3895816B2 (ja) * 1996-12-25 2007-03-22 株式会社東芝 不揮発性半導体記憶装置とその制御方法、メモリカード、及び記憶システム
JP3401395B2 (ja) * 1996-12-25 2003-04-28 シャープ株式会社 不揮発性半導体メモリのデータ書き込み回路
EP0856851B1 (de) * 1997-01-30 2004-03-24 Motorola, Inc. Schaltung und Verfahren zum Verriegeln einer Bitleitung in einem nichtlflüchtigem Speicher
JP3450625B2 (ja) * 1997-02-10 2003-09-29 東芝マイクロエレクトロニクス株式会社 不揮発性半導体記憶装置とその動作方法
US6052314A (en) * 1997-05-22 2000-04-18 Rohm Co., Ltd. EEPROM device
JP3602294B2 (ja) 1997-05-28 2004-12-15 株式会社ルネサステクノロジ 半導体メモリおよび情報記憶装置
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
JP3486079B2 (ja) * 1997-09-18 2004-01-13 株式会社東芝 半導体記憶装置
JPH11243185A (ja) * 1997-12-24 1999-09-07 Sanyo Electric Co Ltd 不揮発性半導体メモリ
US6260103B1 (en) * 1998-01-05 2001-07-10 Intel Corporation Read-while-write memory including fewer verify sense amplifiers than read sense amplifiers
US6182189B1 (en) 1998-01-05 2001-01-30 Intel Corporation Method and apparatus for placing a memory in a read-while-write mode
US6088264A (en) * 1998-01-05 2000-07-11 Intel Corporation Flash memory partitioning for read-while-write operation
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
TW411624B (en) * 1998-03-21 2000-11-11 Shiu Ching Shiang Structure, operation and manufacturing method of flash memory cell through channel writing and erasing
JP3549723B2 (ja) * 1998-03-27 2004-08-04 富士通株式会社 半導体記憶装置
JPH11328981A (ja) 1998-05-12 1999-11-30 Matsushita Electric Ind Co Ltd 半導体記憶装置，およびレギュレータ
KR100318464B1 (ko) * 1998-06-30 2002-02-19 박종섭 재쓰기회로를갖는스태틱램디바이스
US6021069A (en) * 1998-09-24 2000-02-01 Macronix International Co., Ltd. Bit latch scheme for parallel program verify in floating gate memory device
JP2000132981A (ja) * 1998-10-26 2000-05-12 Nec Corp 不揮発性半導体記憶装置の書込み装置とその書込み方法
JP2000173289A (ja) 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
JP3920501B2 (ja) * 1999-04-02 2007-05-30 株式会社東芝 不揮発性半導体記憶装置及びそのデータ消去制御方法
US6535949B1 (en) 1999-04-19 2003-03-18 Research In Motion Limited Portable electronic device having a log-structured file system in flash memory
JP4138173B2 (ja) 1999-08-26 2008-08-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置およびその消去方法
JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
AU2108701A (en) * 1999-12-17 2001-06-25 Qualcomm Incorporated Mobile communication device having flash memory system with word line buffer
JP2001202281A (ja) * 2000-01-19 2001-07-27 Sony Corp 記録方法及び装置、転送方法及び装置、再生方法及び装置、記録媒体
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP4005761B2 (ja) * 2000-06-09 2007-11-14 株式会社東芝 半導体記憶装置
JP2002025282A (ja) 2000-07-12 2002-01-25 Hitachi Ltd 不揮発性半導体記憶装置
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
JP2002133885A (ja) * 2000-10-30 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
JP4291505B2 (ja) * 2000-10-30 2009-07-08 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
JP4250325B2 (ja) * 2000-11-01 2009-04-08 株式会社東芝 半導体記憶装置
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
FR2820545B1 (fr) * 2001-02-02 2003-05-30 St Microelectronics Sa Procede et dispositif de verification d'un groupe de cellules de memoire non volatile
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
DE10146185B4 (de) * 2001-09-19 2006-11-02 Infineon Technologies Ag Verfahren zum Betrieb eines Halbleiterspeichers und Halbleiterspeicher
ITRM20010647A1 (it) * 2001-11-02 2003-05-02 Micron Technology Inc Verifica di cancellazione a blocchi per memorie flash.
US6768685B1 (en) * 2001-11-16 2004-07-27 Mtrix Semiconductor, Inc. Integrated circuit memory array with fast test mode utilizing multiple word line selection and method therefor
JP3851865B2 (ja) 2001-12-19 2006-11-29 株式会社東芝 半導体集積回路
JP3974778B2 (ja) * 2001-12-26 2007-09-12 シャープ株式会社 不揮発性半導体メモリ装置およびそのデータ消去方法
JP3977799B2 (ja) * 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
US6958940B2 (en) * 2002-02-28 2005-10-25 Renesas Technology Corp. Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
EP1355234B1 (de) * 2002-04-15 2016-06-29 Micron Technology, Inc. Benutzung einer Fehlerkorrektionsschaltung in Programmierungs-und Löschverifikation
GB0208922D0 (en) * 2002-04-19 2002-05-29 Ibm Cache memory arrangement and methods for use in a cache memory system
EP1357559B1 (de) * 2002-04-26 2006-06-14 STMicroelectronics S.r.l. Selbstreparatur-Methode für nicht flüchtige Speicher mit einer Architektur zur Fehlervermeidung sowie nicht flüchtiger Speicher
DE60230592D1 (de) * 2002-05-21 2009-02-12 St Microelectronics Srl Selbstreparaturverfahren für nichtflüchtige Speicheranordnung mit Lösch-/Programmierfehlerdetektion, und nichtflüchtige Speicheranordnung dafür
JP4170682B2 (ja) * 2002-06-18 2008-10-22 株式会社東芝 不揮発性半導体メモリ装置
US6611451B1 (en) * 2002-06-28 2003-08-26 Texas Instruments Incorporated Memory array and wordline driver supply voltage differential in standby
JP4129381B2 (ja) * 2002-09-25 2008-08-06 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
JP4241175B2 (ja) * 2003-05-09 2009-03-18 株式会社日立製作所 半導体装置
JP2004348810A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置、携帯電子機器および半導体記憶装置を制御する方法
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
JP4041057B2 (ja) * 2003-11-13 2008-01-30 株式会社東芝 不揮発性半導体記憶装置
US7068556B2 (en) * 2004-03-09 2006-06-27 Lattice Semiconductor Corporation Sense amplifier systems and methods
US7009889B2 (en) 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
US7272050B2 (en) * 2004-08-10 2007-09-18 Samsung Electronics Co., Ltd. Non-volatile memory device and erase method of the same
ITMI20041904A1 (it) * 2004-10-07 2005-01-07 Atmel Corp "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile"
JP2006179101A (ja) * 2004-12-22 2006-07-06 Fujitsu Ltd 半導体記憶装置
KR100666172B1 (ko) * 2005-01-04 2007-01-09 삼성전자주식회사 로드 공급 와이어드 오어 구조를 가지는 불휘발성 반도체메모리 장치와, 이에 대한 구동방법
KR100666171B1 (ko) * 2005-01-10 2007-01-09 삼성전자주식회사 로드 프리 타입의 와이어드 오어 구조를 가지는 불휘발성반도체 메모리 장치와, 이에 대한 구동방법
JP2006252624A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体記憶装置
JP4664804B2 (ja) * 2005-04-28 2011-04-06 株式会社東芝 不揮発性半導体記憶装置
WO2006129780A1 (ja) * 2005-05-30 2006-12-07 Seiko Epson Corporation シーケンシャル書込においてべリファイ処理を行う不揮発性メモリ
US7580287B2 (en) 2005-09-01 2009-08-25 Micron Technology, Inc. Program and read trim setting
JP4846314B2 (ja) * 2005-09-22 2011-12-28 株式会社東芝 半導体記憶装置
EP1932158A4 (de) 2005-09-30 2008-10-15 Mosaid Technologies Inc Speicher mit ausgangssteuerung
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US20070165457A1 (en) * 2005-09-30 2007-07-19 Jin-Ki Kim Nonvolatile memory system
JP4904780B2 (ja) * 2005-11-07 2012-03-28 富士通セミコンダクター株式会社 不揮発性半導体記憶装置
US7236402B2 (en) * 2005-11-30 2007-06-26 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
US8069328B2 (en) * 2006-03-28 2011-11-29 Mosaid Technologies Incorporated Daisy chain cascade configuration recognition technique
US8364861B2 (en) * 2006-03-28 2013-01-29 Mosaid Technologies Incorporated Asynchronous ID generation
US7551492B2 (en) 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
US7558131B2 (en) 2006-05-18 2009-07-07 Micron Technology, Inc. NAND system with a data write frequency greater than a command-and-address-load frequency
US7525841B2 (en) * 2006-06-14 2009-04-28 Micron Technology, Inc. Programming method for NAND flash
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US8997255B2 (en) * 2006-07-31 2015-03-31 Inside Secure Verifying data integrity in a data storage device
JP2008103675A (ja) * 2006-09-22 2008-05-01 Toshiba Corp 半導体集積回路
US7590007B2 (en) * 2007-01-11 2009-09-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7969783B2 (en) 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
JP5253784B2 (ja) * 2007-10-17 2013-07-31 株式会社東芝 不揮発性半導体記憶装置
US7855916B2 (en) * 2007-10-24 2010-12-21 Rao G R Mohan Nonvolatile memory systems with embedded fast read and write memories
US7788550B2 (en) * 2007-12-17 2010-08-31 Atmel Rousset S.A.S. Redundant bit patterns for column defects coding
JP5218228B2 (ja) * 2008-04-23 2013-06-26 新東工業株式会社 搬送装置及びブラスト加工装置
US8107298B2 (en) 2010-01-29 2012-01-31 Sandisk Technologies Inc. Non-volatile memory with fast binary programming and reduced power consumption
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5306399B2 (ja) * 2011-03-18 2013-10-02 株式会社東芝 不揮発性半導体メモリ
US9064590B2 (en) 2012-03-02 2015-06-23 Kabushiki Kaisha Toshiba Driving method of semiconductor storage device and semiconductor storage device
JP5603895B2 (ja) 2012-03-21 2014-10-08 株式会社東芝 半導体記憶装置の駆動方法および半導体記憶装置
CN105830164B (zh) 2013-12-18 2019-11-19 东芝存储器株式会社 半导体存储装置
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US20160299812A1 (en) * 2015-04-08 2016-10-13 Sandisk Enterprise Ip Llc Device-Specific Variable Error Correction
US9768808B2 (en) 2015-04-08 2017-09-19 Sandisk Technologies Llc Method for modifying device-specific variable error correction settings
US9761306B1 (en) * 2016-03-08 2017-09-12 Toshiba Memory Corporation Resistive memory device and method of programming the same
CN110945586B (zh) * 2019-11-01 2021-01-29 长江存储科技有限责任公司 用于闪存器件的感测放大器

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
DE2828836C2 (de) * 1978-06-30 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch löschbarer, nichtflüchtiger Speicher
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
DE3205473A1 (de) * 1982-02-16 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zur funktionspruefung eines elektrisch wortweise umprogrammierbaren speichers
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
US4612640A (en) * 1984-02-21 1986-09-16 Seeq Technology, Inc. Error checking and correction circuitry for use with an electrically-programmable and electrically-erasable memory array
JPS6151695A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体集積回路装置
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
JPH0787032B2 (ja) * 1985-07-08 1995-09-20 日本電気アイシ−マイコンシステム株式会社 半導体記憶装置
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
US4758988A (en) * 1985-12-12 1988-07-19 Motorola, Inc. Dual array EEPROM for high endurance capability
JPS62188100A (ja) * 1986-02-13 1987-08-17 Mitsubishi Electric Corp 紫外線消去型プログラマブルｒｏｍの書込方法
JPS62229600A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
US4819212A (en) * 1986-05-31 1989-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with readout test circuitry
US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
JPS63168900A (ja) * 1987-01-06 1988-07-12 Toshiba Corp 半導体記憶装置
JPS63285800A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd 半導体メモリ装置
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
JPS6425399A (en) * 1987-07-21 1989-01-27 Fujitsu Ltd Programmable device and its test method
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory
JPH0194599A (ja) * 1987-10-05 1989-04-13 Mitsubishi Electric Corp 半導体記憶装置
JPH01109599A (ja) * 1987-10-22 1989-04-26 Nec Corp 書込み・消去可能な半導体記憶装置
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
CA1301261C (en) * 1988-04-27 1992-05-19 Wayne D. Grover Method and apparatus for clock distribution and for distributed clock synchronization
JP2648840B2 (ja) * 1988-11-22 1997-09-03 株式会社日立製作所 半導体記憶装置
JP2698834B2 (ja) * 1988-11-22 1998-01-19 株式会社日立製作所 不揮発性記憶装置
JPH02177100A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置のテスト回路
JPH0748314B2 (ja) * 1989-02-02 1995-05-24 株式会社東芝 半導体記憶装置
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
DE69034191T2 (de) * 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JP2780354B2 (ja) * 1989-07-04 1998-07-30 富士通株式会社 半導体メモリ装置
JPH03137900A (ja) * 1989-07-27 1991-06-12 Nec Corp 不揮発性半導体メモリ
JPH03162800A (ja) * 1989-08-29 1991-07-12 Mitsubishi Electric Corp 半導体メモリ装置
JPH0387000A (ja) * 1989-08-30 1991-04-11 Mitsubishi Electric Corp 半導体記憶装置
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
EP0432481A3 (en) * 1989-12-14 1992-04-29 Texas Instruments Incorporated Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells
US5126973A (en) * 1990-02-14 1992-06-30 Texas Instruments Incorporated Redundancy scheme for eliminating defects in a memory device
JPH03259499A (ja) * 1990-03-08 1991-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5153880A (en) * 1990-03-12 1992-10-06 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2641602B2 (ja) * 1990-07-23 1997-08-20 三菱電機株式会社 不揮発性半導体記憶装置
JPH0482090A (ja) * 1990-07-23 1992-03-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5136544A (en) * 1990-09-26 1992-08-04 Intel Corporation Computer memory with status cell
JP3004043B2 (ja) * 1990-10-23 2000-01-31 株式会社東芝 不揮発性半導体メモリ装置
EP0490680B1 (de) * 1990-12-14 1996-10-02 STMicroelectronics, Inc. Halbleiterspeicher mit Multiplex-Redundanz
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
US5142496A (en) * 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
JP2829156B2 (ja) * 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
US5343437A (en) * 1993-02-19 1994-08-30 Motorola Inc. Memory having nonvolatile and volatile memory banks
JP3178946B2 (ja) * 1993-08-31 2001-06-25 沖電気工業株式会社 半導体記憶装置及びその駆動方法
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
JPH08190796A (ja) * 1995-01-09 1996-07-23 Mitsubishi Denki Semiconductor Software Kk データリフレッシュ機能を有するフラッシュメモリ及びフラッシュメモリのデータリフレッシュ方法
US5574688A (en) * 1995-05-10 1996-11-12 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column

Also Published As

Publication number Publication date
US5909399A (en) 1999-06-01
US5724300A (en) 1998-03-03
DE69233028T2 (de) 2003-12-04
US5361227A (en) 1994-11-01
EP0547640A3 (en) 1997-08-27
EP1316964A2 (de) 2003-06-04
KR930014616A (ko) 1993-07-23
US5615165A (en) 1997-03-25
EP1315171A3 (de) 2011-04-06
EP1316963A3 (de) 2011-04-06
KR960001323B1 (ko) 1996-01-25
EP1316964A3 (de) 2011-04-13
EP1316963A2 (de) 2003-06-04
EP1315171A2 (de) 2003-05-28
US5546351A (en) 1996-08-13
US5818791A (en) 1998-10-06
US5793696A (en) 1998-08-11
US6172911B1 (en) 2001-01-09
EP0547640A2 (de) 1993-06-23
EP0547640B1 (de) 2003-05-02

Similar Documents

Publication Publication Date Title
DE69233028T2 (de) Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem
US6704239B2 (en) Non-volatile semiconductor memory device
TW381267B (en) Non-volatile semiconductor memory elements having single-bit and multi-bit memory cells
USRE44350E1 (en) Nonvolatile semiconductor memory including multi-threshold voltage memory cells including voltage ranges indicating either an erase state or a two or more program state
TWI494930B (zh) 記憶體裝置之數個操作
WO1994007211A3 (en) Latent defect handling in eeprom devices
CN105474325A (zh) 将双单元的存储数据屏蔽而进行输出的半导体器件
US10665307B2 (en) Memory devices configured to perform leak checks
KR950006866A (ko) 고 내구성을 갖는 플래시 이이피롬 어레이
EP3152764B1 (de) Bestimmung von weichen daten
US9646684B1 (en) PCM memory with margin current addition and related methods
US20170178737A1 (en) Programming memory cells to be programmed to different levels to an intermediate level from a lowest level
JPS56134390A (en) Rom element
KR870005473A (ko) 반도체 프로그램어블 메모리 장치
KR101199131B1 (ko) 메모리 장치에서 데이터 전송 및 프로그래밍
JPH07182875A (ja) 半導体記憶装置
JP5031296B2 (ja) Ｎｏｒフラッシュメモリ装置及びそのプログラム方法
JP3548830B2 (ja) 擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法
US11328781B2 (en) Architecture and method for NAND memory programming
EP1297529A2 (de) Schaltung und verfahren zum blockweisen lesen bei gleichzeitigem schreiben
JPS5797151A (en) Instruction storage device
US11942165B2 (en) Architecture and method for NAND memory programming
JPS5769584A (en) Non-volatile semiconductor memory
JPH0457294A (ja) プログラム可能な不揮発性半導体メモリ装置
KR970051327A (ko) 데이타 기억 영역의 속성 데이타를 기억하는 속성 데이타 영역과 데이타 기억 영역을 갖는 비휘발성메모리

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R071 Expiry of right

Ref document number: 547640

Country of ref document: EP