DE69303320T2 - Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie mit Opfermetallschicht - Google Patents

Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie mit Opfermetallschicht

Info

Publication number
DE69303320T2
DE69303320T2 DE69303320T DE69303320T DE69303320T2 DE 69303320 T2 DE69303320 T2 DE 69303320T2 DE 69303320 T DE69303320 T DE 69303320T DE 69303320 T DE69303320 T DE 69303320T DE 69303320 T2 DE69303320 T2 DE 69303320T2
Authority
DE
Germany
Prior art keywords
metal
primary
layer
electroplated
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69303320T
Other languages
English (en)
Other versions
DE69303320D1 (de
Inventor
Henry Guckel Henry Guckel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wisconsin Alumni Research Foundation
Original Assignee
Wisconsin Alumni Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wisconsin Alumni Research Foundation filed Critical Wisconsin Alumni Research Foundation
Application granted granted Critical
Publication of DE69303320D1 publication Critical patent/DE69303320D1/de
Publication of DE69303320T2 publication Critical patent/DE69303320T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/0215—Silicon carbide; Silicon nitride; Silicon oxycarbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Micromachines (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electroplating Methods And Accessories (AREA)
DE69303320T 1992-04-24 1993-04-22 Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie mit Opfermetallschicht Expired - Lifetime DE69303320T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/874,116 US5190637A (en) 1992-04-24 1992-04-24 Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers

Publications (2)

Publication Number Publication Date
DE69303320D1 DE69303320D1 (de) 1996-08-01
DE69303320T2 true DE69303320T2 (de) 1996-10-31

Family

ID=25363007

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303320T Expired - Lifetime DE69303320T2 (de) 1992-04-24 1993-04-22 Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie mit Opfermetallschicht

Country Status (9)

Country Link
US (1) US5190637A (de)
EP (1) EP0567332B1 (de)
JP (1) JP3249233B2 (de)
KR (1) KR100272829B1 (de)
AT (1) ATE139810T1 (de)
CA (1) CA2088605C (de)
DE (1) DE69303320T2 (de)
IL (1) IL104835A0 (de)
MX (1) MX9302149A (de)

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ATE139810T1 (de) 1996-07-15
KR930022470A (ko) 1993-11-24
KR100272829B1 (ko) 2000-12-01
DE69303320D1 (de) 1996-08-01
IL104835A0 (en) 1993-06-10
CA2088605C (en) 2001-01-02
JPH0645232A (ja) 1994-02-18
EP0567332A2 (de) 1993-10-27
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CA2088605A1 (en) 1993-10-25
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