DE69305725T2 - Magnetron-Zerstäubungsvorrichtung und Dünnfilm-Beschichtungsverfahren - Google Patents

Magnetron-Zerstäubungsvorrichtung und Dünnfilm-Beschichtungsverfahren

Info

Publication number
DE69305725T2
DE69305725T2 DE69305725T DE69305725T DE69305725T2 DE 69305725 T2 DE69305725 T2 DE 69305725T2 DE 69305725 T DE69305725 T DE 69305725T DE 69305725 T DE69305725 T DE 69305725T DE 69305725 T2 DE69305725 T2 DE 69305725T2
Authority
DE
Germany
Prior art keywords
thin film
coating process
magnetron sputtering
film coating
sputtering device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69305725T
Other languages
English (en)
Other versions
DE69305725D1 (de
Inventor
Barrett E Cole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69305725D1 publication Critical patent/DE69305725D1/de
Publication of DE69305725T2 publication Critical patent/DE69305725T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69305725T 1992-12-04 1993-11-30 Magnetron-Zerstäubungsvorrichtung und Dünnfilm-Beschichtungsverfahren Expired - Fee Related DE69305725T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/986,834 US5328582A (en) 1992-12-04 1992-12-04 Off-axis magnetron sputter deposition of mirrors

Publications (2)

Publication Number Publication Date
DE69305725D1 DE69305725D1 (de) 1996-12-05
DE69305725T2 true DE69305725T2 (de) 1997-03-20

Family

ID=25532799

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69305725T Expired - Fee Related DE69305725T2 (de) 1992-12-04 1993-11-30 Magnetron-Zerstäubungsvorrichtung und Dünnfilm-Beschichtungsverfahren

Country Status (4)

Country Link
US (1) US5328582A (de)
EP (1) EP0600429B1 (de)
DE (1) DE69305725T2 (de)
HK (1) HK1008111A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482604A (en) * 1994-01-27 1996-01-09 Honeywell Inc. Off-axis radio frequency diode apparatus for sputter deposition of RLG mirrors
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
JP3886209B2 (ja) * 1997-06-02 2007-02-28 貞夫 門倉 対向ターゲット式スパッタ装置
DE19743904C2 (de) * 1997-10-04 2001-12-13 Deutsch Zentr Luft & Raumfahrt Wärmedämmschichten auf einkristallinen und polykristallinen Metallsubstraten mit einer verbesserten kristallographischen Beziehung zwischen Schicht und Substrat
US5935397A (en) * 1998-04-30 1999-08-10 Rockwell Semiconductor Systems, Inc. Physical vapor deposition chamber
US9708706B2 (en) 2011-11-30 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. PVD apparatus and method with deposition chamber having multiple targets and magnets
EP2956567B1 (de) * 2013-02-14 2019-12-25 Universiteit Gent Beschichtungsanlage für kombinatorische dünnfilmmaterialbibliotheken
WO2015112661A1 (en) * 2014-01-23 2015-07-30 Isoflux Incorporated Open drift field sputtering cathode

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041353A (en) * 1971-09-07 1977-08-09 Telic Corporation Glow discharge method and apparatus
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
US4297189A (en) * 1980-06-27 1981-10-27 Rockwell International Corporation Deposition of ordered crystalline films
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
CA1184877A (en) * 1982-05-12 1985-04-02 James B. Webb Method and apparatus for depositing conducting oxide on a substrate
US4437961A (en) * 1982-08-19 1984-03-20 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
JPS5974648A (ja) * 1982-10-22 1984-04-27 Hitachi Ltd スパツタ装置
US4512284A (en) * 1983-12-19 1985-04-23 Rca Corporation Glow discharge apparatus for use in coating a disc-shaped substrate
DE3503398A1 (de) * 1985-02-01 1986-08-07 W.C. Heraeus Gmbh, 6450 Hanau Sputteranlage zum reaktiven beschichten eines substrates mit hartstoffen
US5084151A (en) * 1985-11-26 1992-01-28 Sorin Biomedica S.P.A. Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon
JPS63206462A (ja) * 1987-02-24 1988-08-25 Kawatetsu Kogyo Kk 導電性又は超伝導性薄膜の製造方法
DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
EP0295649B1 (de) * 1987-06-16 1994-12-14 Hitachi, Ltd. Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung
US4963524A (en) * 1987-09-24 1990-10-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering device for manufacturing superconducting oxide material and method therefor
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5124013A (en) * 1988-02-08 1992-06-23 Optical Coating Laboratory, Inc. High ratio planetary drive system and method for vacuum chamber
FR2660106B1 (fr) * 1990-03-23 1994-05-13 Commissariat A Energie Atomique Dispositif pour rendre homogene l'implantation d'ions sur la surface d'echantillons plans.

Also Published As

Publication number Publication date
US5328582A (en) 1994-07-12
EP0600429A1 (de) 1994-06-08
DE69305725D1 (de) 1996-12-05
HK1008111A1 (en) 1999-04-30
EP0600429B1 (de) 1996-10-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee