DE69312709T2 - Lötperle auf schaltungsanordnung - Google Patents

Lötperle auf schaltungsanordnung

Info

Publication number
DE69312709T2
DE69312709T2 DE69312709T DE69312709T DE69312709T2 DE 69312709 T2 DE69312709 T2 DE 69312709T2 DE 69312709 T DE69312709 T DE 69312709T DE 69312709 T DE69312709 T DE 69312709T DE 69312709 T2 DE69312709 T2 DE 69312709T2
Authority
DE
Germany
Prior art keywords
circuit arrangement
pearl
soldering
soldering pearl
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312709T
Other languages
English (en)
Other versions
DE69312709D1 (de
Inventor
Kevin Moore
Carl Missele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69312709D1 publication Critical patent/DE69312709D1/de
Application granted granted Critical
Publication of DE69312709T2 publication Critical patent/DE69312709T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10145—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147—Assembling terminal to base
    • Y10T29/49149—Assembling terminal to base by metal fusion bonding
DE69312709T 1992-04-30 1993-04-21 Lötperle auf schaltungsanordnung Expired - Fee Related DE69312709T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/876,147 US5281684A (en) 1992-04-30 1992-04-30 Solder bumping of integrated circuit die
PCT/US1993/003731 WO1993022475A1 (en) 1992-04-30 1993-04-21 Solder bumping of integrated circuit die

Publications (2)

Publication Number Publication Date
DE69312709D1 DE69312709D1 (de) 1997-09-04
DE69312709T2 true DE69312709T2 (de) 1998-02-05

Family

ID=25367083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312709T Expired - Fee Related DE69312709T2 (de) 1992-04-30 1993-04-21 Lötperle auf schaltungsanordnung

Country Status (6)

Country Link
US (2) US5281684A (de)
EP (1) EP0640151B1 (de)
JP (1) JPH07506462A (de)
KR (1) KR950701396A (de)
DE (1) DE69312709T2 (de)
WO (1) WO1993022475A1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281772A (en) * 1991-10-28 1994-01-25 Delco Electronics Corporation Electrical connector having energy-formed solder stops and methods of making and using the same
US5428249A (en) 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
JP3057130B2 (ja) * 1993-02-18 2000-06-26 三菱電機株式会社 樹脂封止型半導体パッケージおよびその製造方法
JPH07207185A (ja) * 1994-01-21 1995-08-08 Kawazumi Gijutsu Kenkyusho:Kk 被覆パラジウム微粉末および導電性ペースト
US5615824A (en) * 1994-06-07 1997-04-01 Tessera, Inc. Soldering with resilient contacts
US5632631A (en) * 1994-06-07 1997-05-27 Tessera, Inc. Microelectronic contacts with asperities and methods of making same
US5802699A (en) * 1994-06-07 1998-09-08 Tessera, Inc. Methods of assembling microelectronic assembly with socket for engaging bump leads
US5983492A (en) * 1996-11-27 1999-11-16 Tessera, Inc. Low profile socket for microelectronic components and method for making the same
JP2792532B2 (ja) * 1994-09-30 1998-09-03 日本電気株式会社 半導体装置の製造方法及び半導体ウエハー
US6826827B1 (en) * 1994-12-29 2004-12-07 Tessera, Inc. Forming conductive posts by selective removal of conductive material
US6204074B1 (en) 1995-01-09 2001-03-20 International Business Machines Corporation Chip design process for wire bond and flip-chip package
US5517127A (en) * 1995-01-09 1996-05-14 International Business Machines Corporation Additive structure and method for testing semiconductor wire bond dies
JP3362545B2 (ja) * 1995-03-09 2003-01-07 ソニー株式会社 半導体装置の製造方法
JPH09107048A (ja) * 1995-03-30 1997-04-22 Mitsubishi Electric Corp 半導体パッケージ
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
WO1996031905A1 (en) 1995-04-05 1996-10-10 Mcnc A solder bump structure for a microelectronic substrate
TW336371B (en) * 1995-07-13 1998-07-11 Motorola Inc Method for forming bumps on a substrate the invention relates to a method for forming bumps on a substrate
US5699613A (en) * 1995-09-25 1997-12-23 International Business Machines Corporation Fine dimension stacked vias for a multiple layer circuit board structure
US5844317A (en) * 1995-12-21 1998-12-01 International Business Machines Corporation Consolidated chip design for wire bond and flip-chip package technologies
US5851911A (en) 1996-03-07 1998-12-22 Micron Technology, Inc. Mask repattern process
CN1095623C (zh) * 1996-04-18 2002-12-04 国际商业机器公司 用于含铜金属的复合涂料组合物
FR2748602B1 (fr) * 1996-05-07 1998-08-21 Solaic Sa Circuit integre comportant des plots de connexion debouchant sur une face
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5902686A (en) * 1996-11-21 1999-05-11 Mcnc Methods for forming an intermetallic region between a solder bump and an under bump metallurgy layer and related structures
JP3335575B2 (ja) 1997-06-06 2002-10-21 松下電器産業株式会社 半導体装置およびその製造方法
EP0899787A3 (de) * 1997-07-25 2001-05-16 Mcnc Knotrolliert geformte Lötreservoirszur Volumenerhöhung von Löthöckern und damit hergestellten Strukturen
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
US6441487B2 (en) * 1997-10-20 2002-08-27 Flip Chip Technologies, L.L.C. Chip scale package using large ductile solder balls
US6303988B1 (en) * 1998-04-22 2001-10-16 Packard Hughes Interconnect Company Wafer scale burn-in socket
US6903451B1 (en) * 1998-08-28 2005-06-07 Samsung Electronics Co., Ltd. Chip scale packages manufactured at wafer level
US6011314A (en) * 1999-02-01 2000-01-04 Hewlett-Packard Company Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps
US6544880B1 (en) * 1999-06-14 2003-04-08 Micron Technology, Inc. Method of improving copper interconnects of semiconductor devices for bonding
US6130479A (en) * 1999-08-02 2000-10-10 International Business Machines Corporation Nickel alloy films for reduced intermetallic formation in solder
AU742589B2 (en) * 2000-05-23 2002-01-10 Evergrand Holdings Ltd. Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on substrate
EP1162654A1 (de) * 2000-06-06 2001-12-12 I-Ming Chen Verfahren zum Montieren eines Halbleiterchips auf einem Substrat und Halbleitervorrichtung geeignet für das Montieren auf einem Substrat
US6569753B1 (en) * 2000-06-08 2003-05-27 Micron Technology, Inc. Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same
US6201305B1 (en) * 2000-06-09 2001-03-13 Amkor Technology, Inc. Making solder ball mounting pads on substrates
JP2002141576A (ja) * 2000-11-02 2002-05-17 Fujitsu Ltd ピエゾ素子と電極との接合方法及び該接合方法を使用したピエゾマイクロアクチュエータ
DE60108413T2 (de) 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
KR100420780B1 (ko) * 2000-12-28 2004-03-02 에버그랜드 홀딩스 리미티드 기판에 반도체 칩을 실장하기 위한 방법 및 기판의 실장에적합한 반도체 소자
KR100415239B1 (ko) * 2001-02-28 2004-01-14 에버그랜드 홀딩스 리미티드 기판에 반도체 칩을 실장하기 위한 방법 및 기판 상에실장하기에 적합한 반도체 장치
US8286046B2 (en) 2001-09-28 2012-10-09 Rambus Inc. Integrated circuit testing module including signal shaping interface
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US6960828B2 (en) * 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6965160B2 (en) * 2002-08-15 2005-11-15 Micron Technology, Inc. Semiconductor dice packages employing at least one redistribution layer
AU2003301632A1 (en) 2002-10-22 2004-05-13 Unitive International Limited Stacked electronic structures including offset substrates
US8063650B2 (en) 2002-11-27 2011-11-22 Rambus Inc. Testing fuse configurations in semiconductor devices
TWI225899B (en) 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
TW200603698A (en) 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US7615873B2 (en) * 2004-04-21 2009-11-10 International Rectifier Corporation Solder flow stops for semiconductor die substrates
US7453157B2 (en) 2004-06-25 2008-11-18 Tessera, Inc. Microelectronic packages and methods therefor
US7419852B2 (en) * 2004-08-27 2008-09-02 Micron Technology, Inc. Low temperature methods of forming back side redistribution layers in association with through wafer interconnects, semiconductor devices including same, and assemblies
WO2006050127A2 (en) * 2004-10-29 2006-05-11 Flipchip International, Llc Semiconductor device package with bump overlying a polymer layer
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7701045B2 (en) 2006-04-11 2010-04-20 Rambus Inc. Point-to-point connection topology for stacked devices
US9899312B2 (en) * 2006-04-13 2018-02-20 Rambus Inc. Isolating electric paths in semiconductor device packages
US8890338B2 (en) * 2006-09-27 2014-11-18 Agere Systems, Inc. Method of identifying and/or programming an integrated circuit
US8097497B2 (en) * 2007-03-30 2012-01-17 Xerox Corporation Inkjet printed wirebonds, encapsulant and shielding
US7973418B2 (en) 2007-04-23 2011-07-05 Flipchip International, Llc Solder bump interconnect for improved mechanical and thermo-mechanical performance
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
US8088634B2 (en) * 2008-11-11 2012-01-03 Johnson Morgan T Methods of adding pads and one or more interconnect layers to the passivated topside of a wafer including connections to at least a portion of the integrated circuit pads thereon
US9137903B2 (en) 2010-12-21 2015-09-15 Tessera, Inc. Semiconductor chip assembly and method for making same
US9153508B2 (en) 2011-08-17 2015-10-06 Rambus Inc. Multi-chip package and interposer with signal line compression
KR101774938B1 (ko) 2011-08-31 2017-09-06 삼성전자 주식회사 지지대를 갖는 반도체 패키지 및 그 형성 방법
WO2013033628A1 (en) 2011-09-01 2013-03-07 Rambus Inc. Testing through-silicon-vias
US8802556B2 (en) * 2012-11-14 2014-08-12 Qualcomm Incorporated Barrier layer on bump and non-wettable coating on trace
US9698079B2 (en) 2014-01-03 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier structures between external electrical connectors
US8947830B1 (en) 2014-06-10 2015-02-03 Seagate Technology Llc Method of forming electrical connections from solder posts
US9385073B2 (en) * 2014-08-19 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Packages having integrated devices and methods of forming same
US10593562B2 (en) * 2015-04-02 2020-03-17 Samtec, Inc. Method for creating through-connected vias and conductors on a substrate

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458925A (en) * 1966-01-20 1969-08-05 Ibm Method of forming solder mounds on substrates
US3461357A (en) * 1967-09-15 1969-08-12 Ibm Multilevel terminal metallurgy for semiconductor devices
US3663184A (en) * 1970-01-23 1972-05-16 Fairchild Camera Instr Co Solder bump metallization system using a titanium-nickel barrier layer
US3801364A (en) * 1971-02-03 1974-04-02 Matsushita Electric Ind Co Ltd Method for making printed circuits which include printed resistors
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
US4427715A (en) * 1978-07-03 1984-01-24 National Semiconductor Corporation Method of forming expanded pad structure
US4273859A (en) * 1979-12-31 1981-06-16 Honeywell Information Systems Inc. Method of forming solder bump terminals on semiconductor elements
US4450188A (en) * 1980-04-18 1984-05-22 Shinroku Kawasumi Process for the preparation of precious metal-coated particles
JPS59217336A (ja) * 1983-05-25 1984-12-07 Denki Kagaku Kogyo Kk 混成集積回路及び基板
JPS6167702A (ja) * 1984-09-07 1986-04-07 Mitsui Mining & Smelting Co Ltd 導電性粉末及びこれを用いた導電性組成物
US4661375A (en) * 1985-04-22 1987-04-28 At&T Technologies, Inc. Method for increasing the height of solder bumps
US4661192A (en) * 1985-08-22 1987-04-28 Motorola, Inc. Low cost integrated circuit bonding process
DE3534502A1 (de) * 1985-09-27 1987-04-09 Licentia Gmbh Verfahren zum herstellen einer klebekontaktierung
JPH0770654B2 (ja) * 1987-03-27 1995-07-31 松下電子工業株式会社 半導体装置
JPS6459971A (en) * 1987-08-31 1989-03-07 Oki Electric Ind Co Ltd Optoelctric transducer array
JPH01124273A (ja) * 1987-11-10 1989-05-17 Asahi Chem Ind Co Ltd 磁電変換素子の実装構造
JPH01126480U (de) * 1988-02-23 1989-08-29
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
US5092034A (en) * 1988-12-19 1992-03-03 Hewlett-Packard Company Soldering interconnect method for semiconductor packages
JP2619289B2 (ja) * 1989-06-20 1997-06-11 三井金属鉱業株式会社 銅導電性組成物
US5048747A (en) * 1989-06-27 1991-09-17 At&T Bell Laboratories Solder assembly of components
JPH0373503A (ja) * 1989-08-14 1991-03-28 Mitsui Mining & Smelting Co Ltd 回路形成方法
US5135155A (en) * 1989-08-25 1992-08-04 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
JP2660937B2 (ja) * 1990-07-16 1997-10-08 三井金属鉱業株式会社 銅導電性組成物
JPH04352383A (ja) * 1991-05-29 1992-12-07 Sumitomo Bakelite Co Ltd プリント配線板の製造方法
US5160409A (en) * 1991-08-05 1992-11-03 Motorola, Inc. Solder plate reflow method for forming a solder bump on a circuit trace intersection

Also Published As

Publication number Publication date
DE69312709D1 (de) 1997-09-04
WO1993022475A1 (en) 1993-11-11
US5327013A (en) 1994-07-05
JPH07506462A (ja) 1995-07-13
US5281684A (en) 1994-01-25
EP0640151B1 (de) 1997-07-30
EP0640151A4 (de) 1995-05-03
EP0640151A1 (de) 1995-03-01
KR950701396A (ko) 1995-03-23

Similar Documents

Publication Publication Date Title
DE69312709D1 (de) Lötperle auf schaltungsanordnung
DE69302296T2 (de) Leiterplatte
DE69401078D1 (de) Gedruckte Schaltung
DE69324782T2 (de) Versorgungsschaltung
DE69119152T2 (de) Schaltungsanordnung
DE69317350D1 (de) Vergleichsschaltung
DE69213986D1 (de) Schaltungsanordnung
DE69206651T2 (de) Schaltungsanordnung
DE69124896T2 (de) Elektronischer Schaltkreis
BR9006653A (pt) Complexo central de circuitos eletronicos
DE69216663D1 (de) Schaltkreis
DE69209873T2 (de) Multiplizierschaltung
DE69132642D1 (de) Treiberschaltkreis
DE69314981D1 (de) Verstärkerschaltung
DE59304283D1 (de) Schaltungsanordnung
DE69220456D1 (de) Schaltungsanordnung
DE69210891T2 (de) Elektronischer Ein- und Ausblendeschalter
DE59308485D1 (de) Integrierte Schaltungsanordnung
NO930097D0 (no) Deler-synkroniseringskrets
DE59309930D1 (de) Integrierte Schaltungsanordnung
KR950701160A (ko) 결합회로
DK0592007T3 (da) Omskifterapparat
DE59303835D1 (de) Schaltungsanordnung
DE9209570U1 (de) Schaltungsanordnung
KR940001616U (ko) 전자 충격기 회로

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee