DE69315832T2 - Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner Herstellung - Google Patents
Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69315832T2 DE69315832T2 DE69315832T DE69315832T DE69315832T2 DE 69315832 T2 DE69315832 T2 DE 69315832T2 DE 69315832 T DE69315832 T DE 69315832T DE 69315832 T DE69315832 T DE 69315832T DE 69315832 T2 DE69315832 T2 DE 69315832T2
- Authority
- DE
- Germany
- Prior art keywords
- heterostructure
- selenide
- layer
- zinc
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/881,599 US5818072A (en) | 1992-05-12 | 1992-05-12 | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
US07/934,190 US5294833A (en) | 1992-05-12 | 1992-08-21 | Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
US08/054,040 US5351255A (en) | 1992-05-12 | 1993-04-28 | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
PCT/US1993/004342 WO1993023883A1 (en) | 1992-05-12 | 1993-05-07 | Integrated heterostructure of group ii-vi semiconductor materials including epitaxial ohmic contact and method of fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69315832D1 DE69315832D1 (de) | 1998-01-29 |
DE69315832T2 true DE69315832T2 (de) | 1998-07-23 |
Family
ID=27368546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69315832T Expired - Fee Related DE69315832T2 (de) | 1992-05-12 | 1993-05-07 | Epitaktischer ohmscher Kontakt für integrierte Heterostruktur von II-VI-Halbleitermaterialien und Verfahren zu seiner Herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US5351255A (de) |
EP (1) | EP0640248B1 (de) |
JP (1) | JP3270476B2 (de) |
AT (1) | ATE161361T1 (de) |
AU (1) | AU4239293A (de) |
DE (1) | DE69315832T2 (de) |
WO (1) | WO1993023883A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
WO1994015369A1 (en) * | 1992-12-22 | 1994-07-07 | Research Corporation Technologies, Inc. | Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor |
US5567646A (en) * | 1992-12-28 | 1996-10-22 | Philips Electronics North America Corporation | Method of making a stripe-geometry II/VI semiconductor gain-guided injection laser structure using ion implantation |
JPH07240561A (ja) * | 1994-02-23 | 1995-09-12 | Hewlett Packard Co <Hp> | Ii−vi族系半導体レーザおよびその製造方法 |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
US5663974A (en) * | 1994-11-11 | 1997-09-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
EP0918384B1 (de) * | 1995-01-20 | 2002-12-11 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5680412A (en) * | 1995-07-26 | 1997-10-21 | Demaria Electrooptics Systems, Inc. | Apparatus for improving the optical intensity induced damage limit of optical quality crystals |
US5782996A (en) * | 1995-08-29 | 1998-07-21 | Philips Electronics North America Corporation | Graded compositions of II-VI semiconductors and devices utilizing same |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
US6357889B1 (en) | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
US6883926B2 (en) * | 2000-07-25 | 2005-04-26 | General Electric Company | Light emitting semi-conductor device apparatus for display illumination |
US6587097B1 (en) | 2000-11-28 | 2003-07-01 | 3M Innovative Properties Co. | Display system |
JP3473580B2 (ja) * | 2000-12-27 | 2003-12-08 | 住友電気工業株式会社 | ZnSe多結晶体の炭酸ガスレーザ用回折型光学部品の製造方法 |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
US7087936B2 (en) * | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
TW200520266A (en) * | 2003-11-21 | 2005-06-16 | Sanken Electric Co Ltd | Semiconductor luminous element and manufacturing method of the same |
JP2005268601A (ja) * | 2004-03-19 | 2005-09-29 | Sumitomo Chemical Co Ltd | 化合物半導体発光素子 |
US7368368B2 (en) * | 2004-08-18 | 2008-05-06 | Cree, Inc. | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
US20080121269A1 (en) * | 2006-08-23 | 2008-05-29 | Welser Roger E | Photovoltaic micro-concentrator modules |
US7466578B2 (en) * | 2006-11-28 | 2008-12-16 | Texas Instruments Incorporated | Methods and systems for read-only memory |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
JP5762901B2 (ja) * | 2011-09-15 | 2015-08-12 | 株式会社東芝 | 半導体発光素子、ウェーハ、半導体発光素子の製造方法及びウェーハの製造方法 |
CN114203918B (zh) * | 2021-12-09 | 2023-09-12 | 西北工业大学 | 一种基于PVK/ZnO异质结构的新型光电忆阻器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326280A (en) * | 1976-08-24 | 1978-03-10 | Handotai Kenkyu Shinkokai | Crystal growth for mixed crystals of compund semiconductor |
US4123295A (en) * | 1977-01-14 | 1978-10-31 | California Institute Of Technology | Mercury chalcogenide contact for semiconductor devices |
DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
JPS575325A (en) * | 1980-06-12 | 1982-01-12 | Junichi Nishizawa | Semicondoctor p-n junction device and manufacture thereof |
US4801984A (en) * | 1980-06-12 | 1989-01-31 | International Business Machines Corporation | Semiconductor ohmic contact |
JPH0750795B2 (ja) * | 1985-03-28 | 1995-05-31 | キヤノン株式会社 | 発光素子 |
US4755663A (en) * | 1986-12-08 | 1988-07-05 | Bell Communications Research, Inc. | Textured surface, graded gap switch for transmission line optical detectors |
JPS63150986A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
US5081632A (en) * | 1989-01-26 | 1992-01-14 | Hitachi, Ltd. | Semiconductor emitting device |
JPH02270387A (ja) * | 1989-04-11 | 1990-11-05 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
US5045897A (en) * | 1990-03-14 | 1991-09-03 | Santa Barbara Research Center | Quaternary II-VI materials for photonics |
US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
US5181219A (en) * | 1990-09-12 | 1993-01-19 | Seiko Epson Corporation | Surface emission type semiconductor laser |
-
1993
- 1993-04-28 US US08/054,040 patent/US5351255A/en not_active Expired - Lifetime
- 1993-05-07 JP JP50364994A patent/JP3270476B2/ja not_active Expired - Fee Related
- 1993-05-07 DE DE69315832T patent/DE69315832T2/de not_active Expired - Fee Related
- 1993-05-07 AU AU42392/93A patent/AU4239293A/en not_active Abandoned
- 1993-05-07 WO PCT/US1993/004342 patent/WO1993023883A1/en active IP Right Grant
- 1993-05-07 AT AT93911149T patent/ATE161361T1/de not_active IP Right Cessation
- 1993-05-07 EP EP93911149A patent/EP0640248B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0640248B1 (de) | 1997-12-17 |
JPH11505066A (ja) | 1999-05-11 |
EP0640248A1 (de) | 1995-03-01 |
ATE161361T1 (de) | 1998-01-15 |
US5351255A (en) | 1994-09-27 |
WO1993023883A1 (en) | 1993-11-25 |
AU4239293A (en) | 1993-12-13 |
JP3270476B2 (ja) | 2002-04-02 |
DE69315832D1 (de) | 1998-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |