DE69317083D1 - Prozesssteuerung für Submikron-Linienbreitemessung - Google Patents

Prozesssteuerung für Submikron-Linienbreitemessung

Info

Publication number
DE69317083D1
DE69317083D1 DE69317083T DE69317083T DE69317083D1 DE 69317083 D1 DE69317083 D1 DE 69317083D1 DE 69317083 T DE69317083 T DE 69317083T DE 69317083 T DE69317083 T DE 69317083T DE 69317083 D1 DE69317083 D1 DE 69317083D1
Authority
DE
Germany
Prior art keywords
line width
process control
width measurement
submicron line
submicron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317083T
Other languages
English (en)
Other versions
DE69317083T2 (de
Inventor
Thomas J Aton
Jimmy W Hosch
Phillip Chapados
Ajit P Paranjpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69317083D1 publication Critical patent/DE69317083D1/de
Application granted granted Critical
Publication of DE69317083T2 publication Critical patent/DE69317083T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
DE69317083T 1992-08-31 1993-08-27 Prozesssteuerung für Submikron-Linienbreitemessung Expired - Fee Related DE69317083T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/938,078 US5361137A (en) 1992-08-31 1992-08-31 Process control for submicron linewidth measurement

Publications (2)

Publication Number Publication Date
DE69317083D1 true DE69317083D1 (de) 1998-04-02
DE69317083T2 DE69317083T2 (de) 1998-06-10

Family

ID=25470838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317083T Expired - Fee Related DE69317083T2 (de) 1992-08-31 1993-08-27 Prozesssteuerung für Submikron-Linienbreitemessung

Country Status (5)

Country Link
US (1) US5361137A (de)
EP (1) EP0585839B1 (de)
JP (1) JP3361153B2 (de)
DE (1) DE69317083T2 (de)
TW (1) TW227599B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4424565C1 (de) * 1994-07-13 1995-08-24 Kurz Leonhard Fa Verfahren zur Messung der Tiefe einer Mikrostruktur
DE19632763C2 (de) * 1996-08-14 1998-09-10 Holger Moritz Meßkopf für die Beobachtung der Photolackentwicklung
US5940194A (en) * 1996-10-22 1999-08-17 University Of Delaware Real time-determination of interconnect metrology using binary computer-generated holograms
JP4327266B2 (ja) * 1997-02-26 2009-09-09 株式会社東芝 パターン寸法評価方法及びパターン形成方法
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6836324B2 (en) * 1998-03-18 2004-12-28 Nova Measuring Instruments Ltd. Method and apparatus for measurements of patterned structures
IL123727A (en) 1998-03-18 2002-05-23 Nova Measuring Instr Ltd Method and apparatus for measurement of patterned structures
US6476920B1 (en) 1998-03-18 2002-11-05 Nova Measuring Instruments, Ltd. Method and apparatus for measurements of patterned structures
BR9914394A (pt) 1998-10-08 2001-06-26 Daimler Chrysler Ag Medição de ondulações pequenas, periódicas em superfìcies
US8531678B2 (en) 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6400458B1 (en) * 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US6304332B1 (en) 2000-02-17 2001-10-16 Lucent Technologies Inc. Precision grating period measurement arrangement
US20050174583A1 (en) * 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
DE10058216C1 (de) * 2000-11-23 2002-06-06 Infineon Technologies Ag Verfahren zur Bestimmung eines Abstandes periodischer Strukturen
TW569368B (en) * 2001-11-14 2004-01-01 Tokyo Electron Ltd Substrate inspecting apparatus, coating and developing apparatus, and substrate inspecting method
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
US20070146685A1 (en) * 2005-11-30 2007-06-28 Yoo Woo S Dynamic wafer stress management system
US7440094B2 (en) * 2005-11-30 2008-10-21 Wafermasters Incorporated Optical sample characterization system
TWI292031B (en) * 2006-02-10 2008-01-01 Ind Tech Res Inst Dimension measuring method and optical measuring system implemented with the method
US7763404B2 (en) * 2006-09-26 2010-07-27 Tokyo Electron Limited Methods and apparatus for changing the optical properties of resists
US7545520B2 (en) * 2006-11-15 2009-06-09 Asml Netherlands B.V. System and method for CD determination using an alignment sensor of a lithographic apparatus
TWI305826B (en) * 2006-12-13 2009-02-01 Ind Tech Res Inst Method for correlating the line width roughness of gratings and method for measurement
US8049213B2 (en) * 2007-12-18 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Feature dimension measurement
JP5027753B2 (ja) * 2008-07-30 2012-09-19 東京エレクトロン株式会社 基板処理制御方法及び記憶媒体
JP6391155B2 (ja) * 2014-09-22 2018-09-19 国立大学法人東北大学 絶対角測定装置及び絶対角測定方法
JP6697285B2 (ja) * 2015-02-25 2020-05-20 株式会社昭和電気研究所 ウェハ欠陥検査装置
EP3467589A1 (de) 2017-10-06 2019-04-10 ASML Netherlands B.V. Bestimmung von kantenrauheitsparametern
WO2018233947A1 (en) 2017-06-20 2018-12-27 Asml Netherlands B.V. DETERMINATION OF EDGE ROUGHNESS PARAMETERS
EP3435161A1 (de) 2017-07-24 2019-01-30 ASML Netherlands B.V. Bestimmung eines kantenrauheitsparameters einer periodischen struktur
CN114152194B (zh) * 2021-11-16 2022-10-04 华中科技大学 一种基于反射光栅的微位移测量装置及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050821A (en) * 1976-09-27 1977-09-27 Bell Telephone Laboratories, Incorporated Linewidth measurement method and apparatus
US4200396A (en) * 1977-12-19 1980-04-29 Rca Corporation Optically testing the lateral dimensions of a pattern
US4330213A (en) * 1980-02-14 1982-05-18 Rca Corporation Optical line width measuring apparatus and method
US4408884A (en) * 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
DE3305977A1 (de) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur schnellen indirekten bestimmung von fotolacklinienbreiten bei der optischen projektionsbe lichtung

Also Published As

Publication number Publication date
TW227599B (de) 1994-08-01
EP0585839A2 (de) 1994-03-09
US5361137A (en) 1994-11-01
EP0585839A3 (en) 1994-06-08
JP3361153B2 (ja) 2003-01-07
JPH06174427A (ja) 1994-06-24
EP0585839B1 (de) 1998-02-25
DE69317083T2 (de) 1998-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee