DE69318653T2 - Herstellung von dotierten, mit seltener Erde übersättigten Halbleiterschichten durch CVD - Google Patents
Herstellung von dotierten, mit seltener Erde übersättigten Halbleiterschichten durch CVDInfo
- Publication number
- DE69318653T2 DE69318653T2 DE69318653T DE69318653T DE69318653T2 DE 69318653 T2 DE69318653 T2 DE 69318653T2 DE 69318653 T DE69318653 T DE 69318653T DE 69318653 T DE69318653 T DE 69318653T DE 69318653 T2 DE69318653 T2 DE 69318653T2
- Authority
- DE
- Germany
- Prior art keywords
- rare earth
- reactor
- erbium
- doped
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229920006395 saturated elastomer Polymers 0.000 title 1
- 238000000034 method Methods 0.000 abstract 4
- 229910052691 Erbium Inorganic materials 0.000 abstract 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 abstract 3
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000003921 oil Substances 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- 150000002910 rare earth metals Chemical class 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 abstract 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910000078 germane Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- -1 rare earth compound Chemical class 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/918—Special or nonstandard dopant
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/940,416 US5322813A (en) | 1992-08-31 | 1992-08-31 | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69318653D1 DE69318653D1 (de) | 1998-06-25 |
| DE69318653T2 true DE69318653T2 (de) | 1999-02-04 |
Family
ID=25474795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69318653T Expired - Lifetime DE69318653T2 (de) | 1992-08-31 | 1993-07-30 | Herstellung von dotierten, mit seltener Erde übersättigten Halbleiterschichten durch CVD |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US5322813A (de) |
| EP (1) | EP0586321B1 (de) |
| JP (1) | JPH0785467B2 (de) |
| KR (1) | KR970008339B1 (de) |
| CN (3) | CN1054234C (de) |
| AT (1) | ATE166491T1 (de) |
| CA (1) | CA2095449C (de) |
| DE (1) | DE69318653T2 (de) |
| ES (1) | ES2116426T3 (de) |
| MX (1) | MX9305267A (de) |
| TW (1) | TW229325B (de) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873549A (en) * | 1987-03-03 | 1989-10-10 | Mita Industrial Co., Ltd. | Device for detecting the life of an image forming process unit, opening of a seal of the unit and attachment of the unit to an image forming apparatus |
| DE69323884T2 (de) * | 1993-10-20 | 1999-07-22 | Cons Ric Microelettronica | Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung |
| US6093246A (en) * | 1995-09-08 | 2000-07-25 | Sandia Corporation | Photonic crystal devices formed by a charged-particle beam |
| US5976941A (en) * | 1997-06-06 | 1999-11-02 | The Whitaker Corporation | Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates |
| US6040225A (en) * | 1997-08-29 | 2000-03-21 | The Whitaker Corporation | Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices |
| US6130471A (en) * | 1997-08-29 | 2000-10-10 | The Whitaker Corporation | Ballasting of high power silicon-germanium heterojunction biploar transistors |
| KR100377716B1 (ko) * | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법 |
| EP1131611A4 (de) | 1998-06-29 | 2003-01-02 | Univ State San Diego | Verfahren und vorrichtung zur bestimmung von kohlenwasserstoff-verbindungen und deren anwendungen |
| US6140669A (en) * | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
| US6143072A (en) * | 1999-04-06 | 2000-11-07 | Ut-Battelle, Llc | Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate |
| US6255669B1 (en) * | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
| KR100510996B1 (ko) * | 1999-12-30 | 2005-08-31 | 주식회사 하이닉스반도체 | 선택적 에피텍셜 성장 공정의 최적화 방법 |
| US6519543B1 (en) * | 2000-05-09 | 2003-02-11 | Agere Systems Inc. | Calibration method for quantitative elemental analysis |
| US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
| KR100384892B1 (ko) * | 2000-12-01 | 2003-05-22 | 한국전자통신연구원 | 에르븀이 도핑된 실리콘나노점의 형성 방법 |
| US6853447B2 (en) * | 2001-02-12 | 2005-02-08 | Analytical Spectral Devices, Inc. | System and method for the collection of spectral image data |
| US6894772B2 (en) * | 2001-02-12 | 2005-05-17 | Analytical Spectral Devices | System and method for grouping reflectance data |
| JP2002334868A (ja) * | 2001-05-10 | 2002-11-22 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| US20030111013A1 (en) * | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
| US6771369B2 (en) * | 2002-03-12 | 2004-08-03 | Analytical Spectral Devices, Inc. | System and method for pharmacy validation and inspection |
| US7081664B2 (en) * | 2003-01-22 | 2006-07-25 | Group Iv Semiconductor Inc. | Doped semiconductor powder and preparation thereof |
| US7440180B2 (en) * | 2004-02-13 | 2008-10-21 | Tang Yin S | Integration of rare-earth doped amplifiers into semiconductor structures and uses of same |
| US7163878B2 (en) * | 2004-11-12 | 2007-01-16 | Texas Instruments Incorporated | Ultra-shallow arsenic junction formation in silicon germanium |
| CN100385693C (zh) * | 2005-08-18 | 2008-04-30 | 中国科学院半导体研究所 | 用等离子体处理提高硅基晶体薄膜发光的方法 |
| DE102006031300A1 (de) * | 2006-06-29 | 2008-01-03 | Schmid Technology Systems Gmbh | Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle |
| US20080138955A1 (en) * | 2006-12-12 | 2008-06-12 | Zhiyuan Ye | Formation of epitaxial layer containing silicon |
| CN102057077B (zh) * | 2008-06-05 | 2013-11-13 | 乔治洛德方法研究和开发液化空气有限公司 | 含镧系元素的前体的制备和含镧系元素的薄膜的沉积 |
| US8269253B2 (en) * | 2009-06-08 | 2012-09-18 | International Rectifier Corporation | Rare earth enhanced high electron mobility transistor and method for fabricating same |
| CN102828242B (zh) * | 2012-09-06 | 2015-05-27 | 西安隆基硅材料股份有限公司 | 含有下转换发光量子点的晶体硅及其制备方法 |
| US9481917B2 (en) * | 2012-12-20 | 2016-11-01 | United Technologies Corporation | Gaseous based desulfurization of alloys |
| US9945761B2 (en) * | 2013-07-30 | 2018-04-17 | Board Of Regents Of The University Of Texas System | Interface designed with differential pumping and built-in figure of merit method to monitor chambers where environmentally sensitive samples are prepared and transferred for analysis |
| US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US10364259B2 (en) * | 2016-12-30 | 2019-07-30 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same |
| US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| GB201812765D0 (en) * | 2018-08-06 | 2018-09-19 | Univ London Queen Mary | Substrate layer |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1900116C3 (de) * | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten |
| US4385946A (en) * | 1981-06-19 | 1983-05-31 | Bell Telephone Laboratories, Incorporated | Rapid alteration of ion implant dopant species to create regions of opposite conductivity |
| DE3319134A1 (de) * | 1983-05-26 | 1985-05-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode |
| US4618381A (en) * | 1983-05-26 | 1986-10-21 | Fuji Electric Corporate Research And Development Ltd. | Method for adding impurities to semiconductor base material |
| US4800173A (en) * | 1986-02-20 | 1989-01-24 | Canon Kabushiki Kaisha | Process for preparing Si or Ge epitaxial film using fluorine oxidant |
| US4826288A (en) * | 1987-04-09 | 1989-05-02 | Polaroid Corporation, Patent Department | Method for fabricating optical fibers having cores with high rare earth content |
| US5248890A (en) * | 1989-05-13 | 1993-09-28 | Forschungszentrum Julich Gmbh | Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device |
| US5296048A (en) * | 1989-05-31 | 1994-03-22 | International Business Machines Corporation | Class of magnetic materials for solid state devices |
| FR2650704B1 (fr) * | 1989-08-01 | 1994-05-06 | Thomson Csf | Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents |
| JPH042699A (ja) * | 1990-04-18 | 1992-01-07 | Mitsubishi Electric Corp | 結晶成長方法 |
| US5119460A (en) * | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
| US5107538A (en) * | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
| US5511946A (en) * | 1994-12-08 | 1996-04-30 | General Electric Company | Cooled airfoil tip corner |
-
1992
- 1992-08-31 US US07/940,416 patent/US5322813A/en not_active Expired - Lifetime
-
1993
- 1993-05-04 CA CA002095449A patent/CA2095449C/en not_active Expired - Fee Related
- 1993-07-28 JP JP5185980A patent/JPH0785467B2/ja not_active Expired - Fee Related
- 1993-07-30 AT AT93480110T patent/ATE166491T1/de active
- 1993-07-30 DE DE69318653T patent/DE69318653T2/de not_active Expired - Lifetime
- 1993-07-30 ES ES93480110T patent/ES2116426T3/es not_active Expired - Lifetime
- 1993-07-30 EP EP93480110A patent/EP0586321B1/de not_active Expired - Lifetime
- 1993-08-19 TW TW082106685A patent/TW229325B/zh not_active IP Right Cessation
- 1993-08-30 CN CN93117079A patent/CN1054234C/zh not_active Expired - Fee Related
- 1993-08-30 KR KR1019930017032A patent/KR970008339B1/ko not_active IP Right Cessation
- 1993-08-30 MX MX9305267A patent/MX9305267A/es not_active IP Right Cessation
-
1994
- 1994-03-09 US US08/207,942 patent/US5534079A/en not_active Expired - Lifetime
-
1995
- 1995-06-06 US US08/468,367 patent/US5646425A/en not_active Expired - Fee Related
-
1999
- 1999-11-09 CN CN99123482A patent/CN1114225C/zh not_active Expired - Fee Related
- 1999-11-09 CN CN99123481A patent/CN1117389C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1117389C (zh) | 2003-08-06 |
| CN1054234C (zh) | 2000-07-05 |
| JPH0785467B2 (ja) | 1995-09-13 |
| JPH06177062A (ja) | 1994-06-24 |
| EP0586321B1 (de) | 1998-05-20 |
| TW229325B (de) | 1994-09-01 |
| CA2095449C (en) | 1997-09-16 |
| KR970008339B1 (ko) | 1997-05-23 |
| CN1114225C (zh) | 2003-07-09 |
| ES2116426T3 (es) | 1998-07-16 |
| CN1255735A (zh) | 2000-06-07 |
| CN1085353A (zh) | 1994-04-13 |
| US5646425A (en) | 1997-07-08 |
| ATE166491T1 (de) | 1998-06-15 |
| CN1255736A (zh) | 2000-06-07 |
| KR940004714A (ko) | 1994-03-15 |
| EP0586321A3 (en) | 1996-03-27 |
| US5322813A (en) | 1994-06-21 |
| DE69318653D1 (de) | 1998-06-25 |
| CA2095449A1 (en) | 1994-03-01 |
| EP0586321A2 (de) | 1994-03-09 |
| US5534079A (en) | 1996-07-09 |
| MX9305267A (es) | 1994-02-28 |
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