DE69318976D1 - Mittels mocvd hergestellte dünne ferroelektrische schichten - Google Patents

Mittels mocvd hergestellte dünne ferroelektrische schichten

Info

Publication number
DE69318976D1
DE69318976D1 DE69318976T DE69318976T DE69318976D1 DE 69318976 D1 DE69318976 D1 DE 69318976D1 DE 69318976 T DE69318976 T DE 69318976T DE 69318976 T DE69318976 T DE 69318976T DE 69318976 D1 DE69318976 D1 DE 69318976D1
Authority
DE
Germany
Prior art keywords
mocvd
ferroelectric layers
layers manufactured
thin ferroelectric
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69318976T
Other languages
English (en)
Other versions
DE69318976T2 (de
Inventor
Seshu B Desu
Chien-Hsiung Peng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Virginia Tech Intellectual Properties Inc
Original Assignee
Sharp Corp
Virginia Tech Intellectual Properties Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Virginia Tech Intellectual Properties Inc filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69318976D1 publication Critical patent/DE69318976D1/de
Publication of DE69318976T2 publication Critical patent/DE69318976T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
DE69318976T 1992-03-09 1993-02-26 Mittels mocvd hergestellte dünne ferroelektrische schichten Expired - Lifetime DE69318976T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84838992A 1992-03-09 1992-03-09
US07/999,738 US5431958A (en) 1992-03-09 1992-12-31 Metalorganic chemical vapor deposition of ferroelectric thin films
PCT/US1993/001761 WO1993018202A1 (en) 1992-03-09 1993-02-26 Ferroelectric thin films made by metalorganic chemical vapor deposition

Publications (2)

Publication Number Publication Date
DE69318976D1 true DE69318976D1 (de) 1998-07-09
DE69318976T2 DE69318976T2 (de) 1998-12-17

Family

ID=27126772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318976T Expired - Lifetime DE69318976T2 (de) 1992-03-09 1993-02-26 Mittels mocvd hergestellte dünne ferroelektrische schichten

Country Status (5)

Country Link
US (1) US5431958A (de)
EP (1) EP0630424B1 (de)
JP (1) JP2965812B2 (de)
DE (1) DE69318976T2 (de)
WO (1) WO1993018202A1 (de)

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KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법
US5641540A (en) * 1994-10-10 1997-06-24 Samsung Electronics Co. Ltd. Preparation method for lead-zirconium-titanium based thin film
US5637352A (en) * 1994-10-10 1997-06-10 Samsung Electronics Co., Ltd. Preparation method for lead-titanium based thin film
DE19506579C2 (de) * 1995-02-24 1996-12-12 Fraunhofer Ges Forschung Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte Schicht
KR0179101B1 (ko) * 1995-03-06 1999-03-20 김주용 피.엘.티. 박막 제조방법
US5753300A (en) * 1995-06-19 1998-05-19 Northwestern University Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films
US5670218A (en) * 1995-10-04 1997-09-23 Hyundai Electronics Industries Co., Ltd. Method for forming ferroelectric thin film and apparatus therefor
KR0183868B1 (ko) * 1996-05-25 1999-04-15 김광호 강유전체막 및 그의 형성방법
US5962884A (en) * 1997-03-07 1999-10-05 Sharp Laboratories Of America, Inc. Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same
US6018171A (en) * 1997-03-07 2000-01-25 Sharp Laboratories Of America, Inc. Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same
US5731608A (en) * 1997-03-07 1998-03-24 Sharp Microelectronics Technology, Inc. One transistor ferroelectric memory cell and method of making the same
US6048738A (en) * 1997-03-07 2000-04-11 Sharp Laboratories Of America, Inc. Method of making ferroelectric memory cell for VLSI RAM array
US5942776A (en) * 1997-03-07 1999-08-24 Sharp Laboratories Of America, Inc. Shallow junction ferroelectric memory cell and method of making the same
US5932904A (en) * 1997-03-07 1999-08-03 Sharp Laboratories Of America, Inc. Two transistor ferroelectric memory cell
WO1998051837A2 (en) * 1997-05-14 1998-11-19 Secretary Of State For Defence Acting Through His Defence Evaluation And Research Agency Chemical vapour deposition precursors
GB9709639D0 (en) * 1997-05-14 1997-07-02 Inorgtech Ltd Chemical vapour deposition precursors
US6177361B1 (en) 1997-05-23 2001-01-23 Micron Technology, Inc. In-situ formation of metal oxide and ferroelectric oxide films
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US5907762A (en) * 1997-12-04 1999-05-25 Sharp Microelectronics Technology, Inc. Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing
KR100287174B1 (ko) * 1998-03-17 2001-04-16 윤종용 다원자계산화물 및 질화물의박막제조방법
KR100300038B1 (ko) 1998-04-08 2002-11-18 현대반도체 주식회사 금속유기물화학기상증착방법및금속유기물화학기상증착기
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
US6216708B1 (en) 1998-07-23 2001-04-17 Micron Technology, Inc. On-line cleaning method for CVD vaporizers
KR100293720B1 (ko) 1998-10-01 2001-07-12 박종섭 반도체 소자의 캐패시터 형성 방법
DE19915247A1 (de) * 1999-04-03 2000-10-05 Philips Corp Intellectual Pty Spannungsabhängiger Dünnschichtkondensator
US6444556B2 (en) * 1999-04-22 2002-09-03 Micron Technology, Inc. Chemistry for chemical vapor deposition of titanium containing films
US6623656B2 (en) * 1999-10-07 2003-09-23 Advanced Technology Materials, Inc. Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
AU2001284724A1 (en) * 2000-08-03 2002-02-18 Microcoating Technologies, Inc. Electronic and optical materials
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6642567B1 (en) * 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
JP3931683B2 (ja) * 2002-01-21 2007-06-20 株式会社高純度化学研究所 化学気相成長法によるｐｚｔ薄膜の製造方法
JP4100953B2 (ja) * 2002-04-18 2008-06-11 キヤノン株式会社 Ｓｉ基板上に単結晶酸化物導電体を有する積層体及びそれを用いたアクチュエーター及びインクジェットヘッドとその製造方法
JP4331442B2 (ja) 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP4217870B2 (ja) * 2002-07-15 2009-02-04 日本電気株式会社 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
JP4708667B2 (ja) * 2002-08-08 2011-06-22 キヤノン株式会社 アクチュエータおよび液体噴射ヘッド
JP4578774B2 (ja) 2003-01-08 2010-11-10 富士通株式会社 強誘電体キャパシタの製造方法
DE10302594A1 (de) * 2003-01-22 2004-07-29 Oellerich, Jörn Verfahren zur Vorbereitung von Oberflächen kohlenstofffaserverstärkter Kunststoffe für die Weiterverarbeitung zu tragenden Strukturteilen
KR101138130B1 (ko) * 2003-12-25 2012-04-23 가부시키가이샤 아데카 금속화합물, 박막 형성용 원료 및 박막의 제조방법
DE102005031200B4 (de) * 2004-07-02 2009-08-20 Schott Ag Verfahren und Vorrichtung zum Herstellen eines kristallachsenorientierten Saphir-Substrats, Saphir-Substrat und Halbleitersubstrat
US8082640B2 (en) 2004-08-31 2011-12-27 Canon Kabushiki Kaisha Method for manufacturing a ferroelectric member element structure
JP2006190809A (ja) * 2005-01-06 2006-07-20 Fujitsu Ltd 半導体装置の製造方法
US7984977B2 (en) * 2006-07-14 2011-07-26 Canon Kabushiki Kaisha Piezoelectric element, manufacturing method for piezoelectric body, and liquid jet head
CN104319117B (zh) * 2014-10-27 2017-03-01 哈尔滨工业大学 一种3d碗状混合纳米结构石墨烯超级电容器电极材料的制备方法

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JPH068509B2 (ja) * 1985-09-17 1994-02-02 勝 岡田 強誘電体薄膜の製造方法
US4946710A (en) * 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
US4963390A (en) * 1988-10-05 1990-10-16 The Aerospace Corporation Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films
US5006363A (en) * 1988-12-08 1991-04-09 Matsushita Electric Industries Co., Ltd. Plasma assited MO-CVD of perooskite dalectric films
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor

Also Published As

Publication number Publication date
US5431958A (en) 1995-07-11
EP0630424B1 (de) 1998-06-03
WO1993018202A1 (en) 1993-09-16
EP0630424A4 (de) 1995-03-01
DE69318976T2 (de) 1998-12-17
EP0630424A1 (de) 1994-12-28
JPH06280023A (ja) 1994-10-04
JP2965812B2 (ja) 1999-10-18

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