DE69318976T2 - Mittels mocvd hergestellte dünne ferroelektrische schichten - Google Patents
Mittels mocvd hergestellte dünne ferroelektrische schichtenInfo
- Publication number
- DE69318976T2 DE69318976T2 DE69318976T DE69318976T DE69318976T2 DE 69318976 T2 DE69318976 T2 DE 69318976T2 DE 69318976 T DE69318976 T DE 69318976T DE 69318976 T DE69318976 T DE 69318976T DE 69318976 T2 DE69318976 T2 DE 69318976T2
- Authority
- DE
- Germany
- Prior art keywords
- mocvd
- ferroelectric layers
- layers manufactured
- thin ferroelectric
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84838992A | 1992-03-09 | 1992-03-09 | |
US07/999,738 US5431958A (en) | 1992-03-09 | 1992-12-31 | Metalorganic chemical vapor deposition of ferroelectric thin films |
PCT/US1993/001761 WO1993018202A1 (en) | 1992-03-09 | 1993-02-26 | Ferroelectric thin films made by metalorganic chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69318976D1 DE69318976D1 (de) | 1998-07-09 |
DE69318976T2 true DE69318976T2 (de) | 1998-12-17 |
Family
ID=27126772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69318976T Expired - Lifetime DE69318976T2 (de) | 1992-03-09 | 1993-02-26 | Mittels mocvd hergestellte dünne ferroelektrische schichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5431958A (de) |
EP (1) | EP0630424B1 (de) |
JP (1) | JP2965812B2 (de) |
DE (1) | DE69318976T2 (de) |
WO (1) | WO1993018202A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005031200B4 (de) * | 2004-07-02 | 2009-08-20 | Schott Ag | Verfahren und Vorrichtung zum Herstellen eines kristallachsenorientierten Saphir-Substrats, Saphir-Substrat und Halbleitersubstrat |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7323581B1 (en) * | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
JPH0799252A (ja) * | 1993-06-22 | 1995-04-11 | Sharp Corp | 強誘電体膜の製造方法及びそれを用いた半導体装置 |
US6052271A (en) * | 1994-01-13 | 2000-04-18 | Rohm Co., Ltd. | Ferroelectric capacitor including an iridium oxide layer in the lower electrode |
KR960015375B1 (ko) * | 1994-06-08 | 1996-11-11 | 현대전자산업 주식회사 | 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법 |
US5641540A (en) * | 1994-10-10 | 1997-06-24 | Samsung Electronics Co. Ltd. | Preparation method for lead-zirconium-titanium based thin film |
US5637352A (en) * | 1994-10-10 | 1997-06-10 | Samsung Electronics Co., Ltd. | Preparation method for lead-titanium based thin film |
DE19506579C2 (de) * | 1995-02-24 | 1996-12-12 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte Schicht |
KR0179101B1 (ko) * | 1995-03-06 | 1999-03-20 | 김주용 | 피.엘.티. 박막 제조방법 |
US5753300A (en) * | 1995-06-19 | 1998-05-19 | Northwestern University | Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films |
US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
KR0183868B1 (ko) * | 1996-05-25 | 1999-04-15 | 김광호 | 강유전체막 및 그의 형성방법 |
US5731608A (en) * | 1997-03-07 | 1998-03-24 | Sharp Microelectronics Technology, Inc. | One transistor ferroelectric memory cell and method of making the same |
US5932904A (en) * | 1997-03-07 | 1999-08-03 | Sharp Laboratories Of America, Inc. | Two transistor ferroelectric memory cell |
US6018171A (en) * | 1997-03-07 | 2000-01-25 | Sharp Laboratories Of America, Inc. | Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same |
US5942776A (en) * | 1997-03-07 | 1999-08-24 | Sharp Laboratories Of America, Inc. | Shallow junction ferroelectric memory cell and method of making the same |
US5962884A (en) * | 1997-03-07 | 1999-10-05 | Sharp Laboratories Of America, Inc. | Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same |
US6048738A (en) * | 1997-03-07 | 2000-04-11 | Sharp Laboratories Of America, Inc. | Method of making ferroelectric memory cell for VLSI RAM array |
KR100548979B1 (ko) * | 1997-05-14 | 2006-02-03 | 키네티큐 리미티드 | 화학 증착용 전구체 |
GB9709639D0 (en) * | 1997-05-14 | 1997-07-02 | Inorgtech Ltd | Chemical vapour deposition precursors |
US6177361B1 (en) | 1997-05-23 | 2001-01-23 | Micron Technology, Inc. | In-situ formation of metal oxide and ferroelectric oxide films |
US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US5907762A (en) * | 1997-12-04 | 1999-05-25 | Sharp Microelectronics Technology, Inc. | Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing |
KR100287174B1 (ko) * | 1998-03-17 | 2001-04-16 | 윤종용 | 다원자계산화물 및 질화물의박막제조방법 |
KR100300038B1 (ko) | 1998-04-08 | 2002-11-18 | 현대반도체 주식회사 | 금속유기물화학기상증착방법및금속유기물화학기상증착기 |
KR100292819B1 (ko) * | 1998-07-07 | 2001-09-17 | 윤종용 | 커패시터및그의제조방법 |
US6216708B1 (en) | 1998-07-23 | 2001-04-17 | Micron Technology, Inc. | On-line cleaning method for CVD vaporizers |
KR100293720B1 (ko) | 1998-10-01 | 2001-07-12 | 박종섭 | 반도체 소자의 캐패시터 형성 방법 |
DE19915247A1 (de) * | 1999-04-03 | 2000-10-05 | Philips Corp Intellectual Pty | Spannungsabhängiger Dünnschichtkondensator |
US6444556B2 (en) * | 1999-04-22 | 2002-09-03 | Micron Technology, Inc. | Chemistry for chemical vapor deposition of titanium containing films |
US6623656B2 (en) * | 1999-10-07 | 2003-09-23 | Advanced Technology Materials, Inc. | Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same |
US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
AU2001284724A1 (en) * | 2000-08-03 | 2002-02-18 | Microcoating Technologies, Inc. | Electronic and optical materials |
US6451692B1 (en) * | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
US6642567B1 (en) * | 2000-08-31 | 2003-11-04 | Micron Technology, Inc. | Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices |
JP3931683B2 (ja) * | 2002-01-21 | 2007-06-20 | 株式会社高純度化学研究所 | 化学気相成長法によるpzt薄膜の製造方法 |
JP4100953B2 (ja) * | 2002-04-18 | 2008-06-11 | キヤノン株式会社 | Si基板上に単結晶酸化物導電体を有する積層体及びそれを用いたアクチュエーター及びインクジェットヘッドとその製造方法 |
JP4331442B2 (ja) | 2002-06-14 | 2009-09-16 | 富士通マイクロエレクトロニクス株式会社 | 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ |
JP4217870B2 (ja) * | 2002-07-15 | 2009-02-04 | 日本電気株式会社 | 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置 |
US20040020430A1 (en) * | 2002-07-26 | 2004-02-05 | Metal Oxide Technologies, Inc. | Method and apparatus for forming a thin film on a tape substrate |
US20040016401A1 (en) * | 2002-07-26 | 2004-01-29 | Metal Oxide Technologies, Inc. | Method and apparatus for forming superconductor material on a tape substrate |
US20040023810A1 (en) * | 2002-07-26 | 2004-02-05 | Alex Ignatiev | Superconductor material on a tape substrate |
JP4708667B2 (ja) * | 2002-08-08 | 2011-06-22 | キヤノン株式会社 | アクチュエータおよび液体噴射ヘッド |
JP4578774B2 (ja) | 2003-01-08 | 2010-11-10 | 富士通株式会社 | 強誘電体キャパシタの製造方法 |
DE10302594A1 (de) * | 2003-01-22 | 2004-07-29 | Oellerich, Jörn | Verfahren zur Vorbereitung von Oberflächen kohlenstofffaserverstärkter Kunststoffe für die Weiterverarbeitung zu tragenden Strukturteilen |
WO2005063685A1 (ja) * | 2003-12-25 | 2005-07-14 | Asahi Denka Co., Ltd. | 金属化合物、薄膜形成用原料及び薄膜の製造方法 |
US8082640B2 (en) | 2004-08-31 | 2011-12-27 | Canon Kabushiki Kaisha | Method for manufacturing a ferroelectric member element structure |
JP2006190809A (ja) * | 2005-01-06 | 2006-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
US7984977B2 (en) * | 2006-07-14 | 2011-07-26 | Canon Kabushiki Kaisha | Piezoelectric element, manufacturing method for piezoelectric body, and liquid jet head |
CN104319117B (zh) * | 2014-10-27 | 2017-03-01 | 哈尔滨工业大学 | 一种3d碗状混合纳米结构石墨烯超级电容器电极材料的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH068509B2 (ja) * | 1985-09-17 | 1994-02-02 | 勝 岡田 | 強誘電体薄膜の製造方法 |
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
US4963390A (en) * | 1988-10-05 | 1990-10-16 | The Aerospace Corporation | Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films |
US5006363A (en) * | 1988-12-08 | 1991-04-09 | Matsushita Electric Industries Co., Ltd. | Plasma assited MO-CVD of perooskite dalectric films |
US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
-
1992
- 1992-12-31 US US07/999,738 patent/US5431958A/en not_active Expired - Lifetime
-
1993
- 1993-02-26 WO PCT/US1993/001761 patent/WO1993018202A1/en active IP Right Grant
- 1993-02-26 DE DE69318976T patent/DE69318976T2/de not_active Expired - Lifetime
- 1993-02-26 EP EP93907068A patent/EP0630424B1/de not_active Expired - Lifetime
- 1993-03-09 JP JP5048347A patent/JP2965812B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005031200B4 (de) * | 2004-07-02 | 2009-08-20 | Schott Ag | Verfahren und Vorrichtung zum Herstellen eines kristallachsenorientierten Saphir-Substrats, Saphir-Substrat und Halbleitersubstrat |
Also Published As
Publication number | Publication date |
---|---|
JPH06280023A (ja) | 1994-10-04 |
DE69318976D1 (de) | 1998-07-09 |
WO1993018202A1 (en) | 1993-09-16 |
US5431958A (en) | 1995-07-11 |
EP0630424A4 (de) | 1995-03-01 |
JP2965812B2 (ja) | 1999-10-18 |
EP0630424B1 (de) | 1998-06-03 |
EP0630424A1 (de) | 1994-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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