DE69319836T2 - Gegen Soft-Fehler resistenter statischer Direktzugriffspeicher - Google Patents
Gegen Soft-Fehler resistenter statischer DirektzugriffspeicherInfo
- Publication number
- DE69319836T2 DE69319836T2 DE69319836T DE69319836T DE69319836T2 DE 69319836 T2 DE69319836 T2 DE 69319836T2 DE 69319836 T DE69319836 T DE 69319836T DE 69319836 T DE69319836 T DE 69319836T DE 69319836 T2 DE69319836 T2 DE 69319836T2
- Authority
- DE
- Germany
- Prior art keywords
- random access
- access memory
- static random
- soft errors
- memory resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/966,910 US5303190A (en) | 1992-10-27 | 1992-10-27 | Static random access memory resistant to soft error |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69319836D1 DE69319836D1 (de) | 1998-08-27 |
DE69319836T2 true DE69319836T2 (de) | 1999-03-04 |
Family
ID=25512038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69319836T Expired - Fee Related DE69319836T2 (de) | 1992-10-27 | 1993-08-26 | Gegen Soft-Fehler resistenter statischer Direktzugriffspeicher |
Country Status (6)
Country | Link |
---|---|
US (1) | US5303190A (de) |
EP (1) | EP0594968B1 (de) |
JP (1) | JPH06223581A (de) |
KR (1) | KR100281152B1 (de) |
DE (1) | DE69319836T2 (de) |
SG (1) | SG86973A1 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2726683B1 (fr) * | 1994-10-13 | 1997-10-10 | Samsung Electronics Co Ltd | Circuit de survoltage d'une tension interne dans un dispositif de memoire a semi-conducteurs |
KR0137437B1 (ko) * | 1994-12-29 | 1998-06-01 | 김주용 | 챠지 펌프회로의 출력전압 조절회로 |
JP4198201B2 (ja) * | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
US5731736A (en) * | 1995-06-30 | 1998-03-24 | Dallas Semiconductor | Charge pump for digital potentiometers |
US5715191A (en) * | 1995-10-25 | 1998-02-03 | Matsushita Electric Industrial Co., Ltd. | Static random access memory having variable supply voltages to the memory cells and method of operating thereof |
US5721509A (en) * | 1996-02-05 | 1998-02-24 | Motorola, Inc. | Charge pump having reduced threshold voltage losses |
US5726944A (en) * | 1996-02-05 | 1998-03-10 | Motorola, Inc. | Voltage regulator for regulating an output voltage from a charge pump and method therefor |
JP2996168B2 (ja) * | 1996-02-23 | 1999-12-27 | 日本電気株式会社 | 半導体メモリ集積回路装置 |
KR100554135B1 (ko) * | 1998-12-30 | 2006-05-16 | 주식회사 하이닉스반도체 | 워드라인 부트스트랩 회로 |
KR100558538B1 (ko) * | 1999-01-19 | 2006-03-10 | 삼성전자주식회사 | 에스 램 셀의 전원 승압 회로 |
US6552887B1 (en) * | 2000-06-29 | 2003-04-22 | Intel Corporation | Voltage dependent capacitor configuration for higher soft error rate tolerance |
US7099065B2 (en) * | 2000-08-03 | 2006-08-29 | Reflectivity, Inc. | Micromirrors with OFF-angle electrodes and stops |
JP5004386B2 (ja) * | 2000-09-18 | 2012-08-22 | 三洋電機株式会社 | 表示装置及びその駆動方法 |
US6529400B1 (en) * | 2000-12-15 | 2003-03-04 | Lsi Logic Corporation | Source pulsed, dynamic threshold complementary metal oxide semiconductor static RAM cells |
US6639864B2 (en) * | 2001-12-18 | 2003-10-28 | Intel Corporation | Flash device operating from a power-supply-in-package (PSIP) or from a power supply on chip |
US6639827B2 (en) * | 2002-03-12 | 2003-10-28 | Intel Corporation | Low standby power using shadow storage |
US6724648B2 (en) * | 2002-04-05 | 2004-04-20 | Intel Corporation | SRAM array with dynamic voltage for reducing active leakage power |
US20030204737A1 (en) * | 2002-04-25 | 2003-10-30 | Chee-Horng Lee | Method for secreting a portable disk drive |
US6794901B2 (en) * | 2002-08-29 | 2004-09-21 | International Business Machines Corporation | Apparatus for reducing soft errors in dynamic circuits |
JP4219663B2 (ja) * | 2002-11-29 | 2009-02-04 | 株式会社ルネサステクノロジ | 半導体記憶装置及び半導体集積回路 |
US6990011B2 (en) * | 2003-05-09 | 2006-01-24 | Stmicroelectronics, Inc. | Memory circuit and method for corrupting stored data |
US7447919B2 (en) * | 2004-04-06 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Voltage modulation for increased reliability in an integrated circuit |
US7031219B2 (en) * | 2004-06-04 | 2006-04-18 | Etron Technology, Inc. | Internal power management scheme for a memory chip in deep power down mode |
JP4138718B2 (ja) * | 2004-08-31 | 2008-08-27 | 株式会社東芝 | 半導体記憶装置 |
US7149132B2 (en) * | 2004-09-24 | 2006-12-12 | Ovonyx, Inc. | Biasing circuit for use in a non-volatile memory device |
US7295363B2 (en) | 2005-04-08 | 2007-11-13 | Texas Instruments Incorporated | Optical coating on light transmissive substrates of micromirror devices |
US7092281B1 (en) * | 2005-04-28 | 2006-08-15 | International Business Machines Corporation | Method and apparatus for reducing soft error rate in SRAM arrays using elevated SRAM voltage during periods of low activity |
US7355905B2 (en) | 2005-07-01 | 2008-04-08 | P.A. Semi, Inc. | Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage |
JP4813937B2 (ja) * | 2006-03-20 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20070286745A1 (en) * | 2006-06-09 | 2007-12-13 | Maynard Chance | Integrated mixing pump |
US7512908B2 (en) * | 2006-06-09 | 2009-03-31 | International Business Machines Corporation | Method and apparatus for improving SRAM cell stability by using boosted word lines |
US8006164B2 (en) | 2006-09-29 | 2011-08-23 | Intel Corporation | Memory cell supply voltage control based on error detection |
US7408830B2 (en) * | 2006-11-07 | 2008-08-05 | Taiwan Semiconductor Manufacturing Co. | Dynamic power supplies for semiconductor devices |
US7606061B2 (en) * | 2007-08-07 | 2009-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM device with a power saving module controlled by word line signals |
US8031549B2 (en) * | 2008-09-19 | 2011-10-04 | Freescale Semiconductor, Inc. | Integrated circuit having boosted array voltage and method therefor |
TWI425509B (zh) * | 2009-11-17 | 2014-02-01 | Univ Hsiuping Sci & Tech | 具放電路徑之雙埠靜態隨機存取記憶體 |
CN102157195B (zh) * | 2011-05-05 | 2013-04-17 | 北京大学 | 低电压静态随机存储器单元、存储器和写操作方法 |
US8520429B2 (en) | 2011-05-05 | 2013-08-27 | International Business Machines Corporation | Data dependent SRAM write assist |
US20130191675A1 (en) * | 2012-01-24 | 2013-07-25 | International Business Machines Corporation | Method and system for providing backup power for memory devices |
US8565040B1 (en) * | 2012-05-17 | 2013-10-22 | Elite Semiconductor Memory Technology Inc. | Voltage regulator circuit |
US9081719B2 (en) | 2012-08-17 | 2015-07-14 | Freescale Semiconductor, Inc. | Selective memory scrubbing based on data type |
US9081693B2 (en) | 2012-08-17 | 2015-07-14 | Freescale Semiconductor, Inc. | Data type dependent memory scrubbing |
US9141552B2 (en) | 2012-08-17 | 2015-09-22 | Freescale Semiconductor, Inc. | Memory using voltage to improve reliability for certain data types |
US9141451B2 (en) | 2013-01-08 | 2015-09-22 | Freescale Semiconductor, Inc. | Memory having improved reliability for certain data types |
US9418716B1 (en) * | 2015-04-15 | 2016-08-16 | Qualcomm Incorporated | Word line and bit line tracking across diverse power domains |
US9823962B2 (en) | 2015-04-22 | 2017-11-21 | Nxp Usa, Inc. | Soft error detection in a memory system |
US10013192B2 (en) | 2016-08-17 | 2018-07-03 | Nxp Usa, Inc. | Soft error detection in a memory system |
TWI669714B (zh) * | 2018-05-29 | 2019-08-21 | 力旺電子股份有限公司 | 電壓控制裝置及記憶體系統 |
JP7138861B2 (ja) * | 2018-10-19 | 2022-09-20 | 三菱重工業株式会社 | 半導体メモリの放射線耐性補償装置及びその方法並びに電子回路 |
CN112331248A (zh) * | 2019-08-05 | 2021-02-05 | 上海复旦微电子集团股份有限公司 | 用于建立nor存储器读电压的电荷泵电路和nor存储器 |
US11355173B2 (en) * | 2019-12-30 | 2022-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power supply generator assist |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3163340D1 (en) * | 1980-01-29 | 1984-06-07 | Nec Corp | Semiconductor device |
US4418402A (en) * | 1981-05-13 | 1983-11-29 | Rca Corporation | Radiation hardened accessible memory |
US4532609A (en) * | 1982-06-15 | 1985-07-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
JPS59121688A (ja) * | 1982-12-28 | 1984-07-13 | Toshiba Corp | スタテイツクランダムアクセスメモリ− |
US4805148A (en) * | 1985-11-22 | 1989-02-14 | Diehl Nagle Sherra E | High impendance-coupled CMOS SRAM for improved single event immunity |
US4725981A (en) * | 1986-02-03 | 1988-02-16 | Motorola, Inc. | Random access memory cell resistant to inadvertant change of state due to charged particles |
US4833644A (en) * | 1986-08-26 | 1989-05-23 | General Electric Company | Memory cell circuit having radiation hardness |
US5189641A (en) * | 1987-06-08 | 1993-02-23 | Fujitsu Limited | Non-volatile random access memory device |
US4879690A (en) * | 1987-09-07 | 1989-11-07 | Mitsubishi Denki Kabushiki Kaisha | Static random access memory with reduced soft error rate |
EP0342466A3 (de) * | 1988-05-16 | 1990-11-28 | National Semiconductor Corporation | Statischer RAM-Speicher mit Immunität gegen Einzelereignisse |
US5046052A (en) * | 1988-06-01 | 1991-09-03 | Sony Corporation | Internal low voltage transformation circuit of static random access memory |
JPH077912B2 (ja) * | 1988-09-13 | 1995-01-30 | 株式会社東芝 | 昇圧回路 |
KR910004736B1 (ko) * | 1988-12-15 | 1991-07-10 | 삼성전자 주식회사 | 스테이틱 메모리장치의 전원전압 조절회로 |
NL8903033A (nl) * | 1989-12-11 | 1991-07-01 | Philips Nv | Alfa-straling ongevoelige 6 transistor cmos geheugencel. |
US5103113A (en) * | 1990-06-13 | 1992-04-07 | Texas Instruments Incorporated | Driving circuit for providing a voltage boasted over the power supply voltage source as a driving signal |
US5057893A (en) * | 1990-09-28 | 1991-10-15 | Motorola, Inc. | Static RAM cell with soft error immunity |
-
1992
- 1992-10-27 US US07/966,910 patent/US5303190A/en not_active Expired - Fee Related
-
1993
- 1993-08-26 EP EP93113637A patent/EP0594968B1/de not_active Expired - Lifetime
- 1993-08-26 SG SG9603669A patent/SG86973A1/en unknown
- 1993-08-26 DE DE69319836T patent/DE69319836T2/de not_active Expired - Fee Related
- 1993-10-13 KR KR1019930021172A patent/KR100281152B1/ko not_active IP Right Cessation
- 1993-10-22 JP JP28618093A patent/JPH06223581A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0594968B1 (de) | 1998-07-22 |
EP0594968A3 (de) | 1994-12-21 |
US5303190A (en) | 1994-04-12 |
JPH06223581A (ja) | 1994-08-12 |
EP0594968A2 (de) | 1994-05-04 |
KR100281152B1 (ko) | 2001-03-02 |
SG86973A1 (en) | 2002-03-19 |
DE69319836D1 (de) | 1998-08-27 |
KR940010108A (ko) | 1994-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |