US6405610B1
(en)
*
|
1995-11-14 |
2002-06-18 |
Nikon Corporation |
Wafer inspection apparatus
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
US6239861B1
(en)
*
|
1996-11-19 |
2001-05-29 |
Nikon Corporation |
Exposure method and scanning type exposure apparatus
|
JPH10209040A
(ja)
*
|
1996-11-25 |
1998-08-07 |
Nikon Corp |
露光装置
|
US6714278B2
(en)
|
1996-11-25 |
2004-03-30 |
Nikon Corporation |
Exposure apparatus
|
CN1244021C
(zh)
|
1996-11-28 |
2006-03-01 |
株式会社尼康 |
光刻装置和曝光方法
|
US5900354A
(en)
*
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
US6071748A
(en)
*
|
1997-07-16 |
2000-06-06 |
Ljl Biosystems, Inc. |
Light detection device
|
US6982431B2
(en)
*
|
1998-08-31 |
2006-01-03 |
Molecular Devices Corporation |
Sample analysis systems
|
AU1051999A
(en)
*
|
1997-11-12 |
1999-05-31 |
Nikon Corporation |
Projection exposure apparatus
|
US6511914B2
(en)
*
|
1999-01-22 |
2003-01-28 |
Semitool, Inc. |
Reactor for processing a workpiece using sonic energy
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6356337B1
(en)
*
|
2000-03-08 |
2002-03-12 |
Anvik Corporation |
Two-sided substrate imaging using single-approach projection optics
|
TW559855B
(en)
*
|
2000-09-06 |
2003-11-01 |
Olympus Optical Co |
Wafer transfer apparatus
|
US20020170887A1
(en)
*
|
2001-03-01 |
2002-11-21 |
Konica Corporation |
Optical element producing method, base material drawing method and base material drawing apparatus
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
DE10210899A1
(de)
*
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
JP2005536775A
(ja)
|
2002-08-23 |
2005-12-02 |
株式会社ニコン |
投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
|
US7239933B2
(en)
*
|
2002-11-11 |
2007-07-03 |
Micron Technology, Inc. |
Substrate supports for use with programmable material consolidation apparatus and systems
|
DE60335595D1
(de)
*
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN100470367C
(zh)
|
2002-11-12 |
2009-03-18 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
US7372541B2
(en)
*
|
2002-11-12 |
2008-05-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP3953460B2
(ja)
*
|
2002-11-12 |
2007-08-08 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ投影装置
|
EP2495613B1
(de)
*
|
2002-11-12 |
2013-07-31 |
ASML Netherlands B.V. |
Lithografische Vorrichtung
|
US9482966B2
(en)
|
2002-11-12 |
2016-11-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN101424881B
(zh)
|
2002-11-12 |
2011-11-30 |
Asml荷兰有限公司 |
光刻投射装置
|
EP1429188B1
(de)
*
|
2002-11-12 |
2013-06-19 |
ASML Netherlands B.V. |
Lithographischer Projektionsapparat
|
US10503084B2
(en)
|
2002-11-12 |
2019-12-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
SG121822A1
(en)
*
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1420302A1
(de)
*
|
2002-11-18 |
2004-05-19 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP1424599B1
(de)
*
|
2002-11-29 |
2008-03-12 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
TWI255971B
(en)
*
|
2002-11-29 |
2006-06-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN100444315C
(zh)
*
|
2002-12-10 |
2008-12-17 |
株式会社尼康 |
曝光装置以及器件制造方法
|
JP4529433B2
(ja)
*
|
2002-12-10 |
2010-08-25 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
JP4645027B2
(ja)
*
|
2002-12-10 |
2011-03-09 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
AU2003302831A1
(en)
*
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
SG165169A1
(en)
*
|
2002-12-10 |
2010-10-28 |
Nikon Corp |
Liquid immersion exposure apparatus
|
KR101101737B1
(ko)
*
|
2002-12-10 |
2012-01-05 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 디바이스 제조방법
|
EP1429190B1
(de)
*
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Belichtungsapparat und -verfahren
|
AU2003289272A1
(en)
*
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
DE10257766A1
(de)
*
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
US7948604B2
(en)
|
2002-12-10 |
2011-05-24 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
JP4352874B2
(ja)
*
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
US7242455B2
(en)
*
|
2002-12-10 |
2007-07-10 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
CN1723541B
(zh)
*
|
2002-12-10 |
2010-06-02 |
株式会社尼康 |
曝光装置和器件制造方法
|
KR20050085026A
(ko)
*
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
|
EP1571701A4
(de)
*
|
2002-12-10 |
2008-04-09 |
Nikon Corp |
Belichtungsvorrichtungund verfahren zur bauelementeherstellung
|
SG171468A1
(en)
*
|
2002-12-10 |
2011-06-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
JP4595320B2
(ja)
*
|
2002-12-10 |
2010-12-08 |
株式会社ニコン |
露光装置、及びデバイス製造方法
|
JP4525062B2
(ja)
*
|
2002-12-10 |
2010-08-18 |
株式会社ニコン |
露光装置及びデバイス製造方法、露光システム
|
KR20050085235A
(ko)
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
EP1579435B1
(de)
*
|
2002-12-19 |
2007-06-27 |
Koninklijke Philips Electronics N.V. |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
DE10261775A1
(de)
*
|
2002-12-20 |
2004-07-01 |
Carl Zeiss Smt Ag |
Vorrichtung zur optischen Vermessung eines Abbildungssystems
|
US7130037B1
(en)
|
2003-01-09 |
2006-10-31 |
Kla-Tencor Technologies Corp. |
Systems for inspecting wafers and reticles with increased resolution
|
JP4434762B2
(ja)
*
|
2003-01-31 |
2010-03-17 |
東京応化工業株式会社 |
レジスト組成物
|
KR101562447B1
(ko)
*
|
2003-02-26 |
2015-10-21 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
JP2005101498A
(ja)
*
|
2003-03-04 |
2005-04-14 |
Tokyo Ohka Kogyo Co Ltd |
液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
|
JPWO2004081999A1
(ja)
*
|
2003-03-12 |
2006-06-15 |
株式会社ニコン |
光学装置、露光装置、並びにデバイス製造方法
|
WO2004086470A1
(ja)
*
|
2003-03-25 |
2004-10-07 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
AU2003219097A1
(en)
*
|
2003-03-26 |
2004-10-18 |
Carl Zeiss Smt Ag |
Device for the low-deformation replaceable mounting of an optical element
|
EP1612850B1
(de)
*
|
2003-04-07 |
2009-03-25 |
Nikon Corporation |
Belichtungsgerät und verfahren zur herstellung einer vorrichtung
|
KR101484435B1
(ko)
|
2003-04-09 |
2015-01-19 |
가부시키가이샤 니콘 |
노광 방법 및 장치, 그리고 디바이스 제조 방법
|
KR20110104084A
(ko)
*
|
2003-04-09 |
2011-09-21 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
WO2004090633A2
(en)
*
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
JP4488005B2
(ja)
*
|
2003-04-10 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ装置用の液体を捕集するための流出通路
|
SG141426A1
(en)
|
2003-04-10 |
2008-04-28 |
Nikon Corp |
Environmental system including vacuum scavange for an immersion lithography apparatus
|
EP3352015A1
(de)
|
2003-04-10 |
2018-07-25 |
Nikon Corporation |
Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung
|
SG2014015135A
(en)
*
|
2003-04-11 |
2015-06-29 |
Nippon Kogaku Kk |
Cleanup method for optics in immersion lithography
|
CN101980087B
(zh)
*
|
2003-04-11 |
2013-03-27 |
株式会社尼康 |
浸没曝光设备以及浸没曝光方法
|
WO2004092830A2
(en)
|
2003-04-11 |
2004-10-28 |
Nikon Corporation |
Liquid jet and recovery system for immersion lithography
|
JP2006523958A
(ja)
|
2003-04-17 |
2006-10-19 |
株式会社ニコン |
液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
|
US7348575B2
(en)
|
2003-05-06 |
2008-03-25 |
Nikon Corporation |
Projection optical system, exposure apparatus, and exposure method
|
KR101516142B1
(ko)
|
2003-05-06 |
2015-05-04 |
가부시키가이샤 니콘 |
투영 광학계, 노광 장치 및 노광 방법
|
JP4025683B2
(ja)
*
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
JP4146755B2
(ja)
*
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JP4552853B2
(ja)
*
|
2003-05-15 |
2010-09-29 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
TW201515064A
(zh)
|
2003-05-23 |
2015-04-16 |
尼康股份有限公司 |
曝光方法及曝光裝置以及元件製造方法
|
TWI612556B
(zh)
*
|
2003-05-23 |
2018-01-21 |
Nikon Corp |
曝光裝置、曝光方法及元件製造方法
|
CN100541717C
(zh)
*
|
2003-05-28 |
2009-09-16 |
株式会社尼康 |
曝光方法、曝光装置以及器件制造方法
|
DE10324477A1
(de)
*
|
2003-05-30 |
2004-12-30 |
Carl Zeiss Smt Ag |
Mikrolithographische Projektionsbelichtungsanlage
|
TWI347741B
(en)
*
|
2003-05-30 |
2011-08-21 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1489461A1
(de)
*
|
2003-06-11 |
2004-12-22 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7684008B2
(en)
*
|
2003-06-11 |
2010-03-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7317504B2
(en)
*
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
TW201818451A
(zh)
|
2003-06-13 |
2018-05-16 |
日商尼康股份有限公司 |
曝光裝置、元件製造方法
|
US6867844B2
(en)
*
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
KR101674329B1
(ko)
|
2003-06-19 |
2016-11-08 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조방법
|
JP2005019616A
(ja)
*
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
JP4343597B2
(ja)
*
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1494079B1
(de)
*
|
2003-06-27 |
2008-01-02 |
ASML Netherlands B.V. |
Lithographischer Apparat
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US6809794B1
(en)
*
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
EP1491956B1
(de)
|
2003-06-27 |
2006-09-06 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
EP1498778A1
(de)
*
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
DE60321779D1
(de)
*
|
2003-06-30 |
2008-08-07 |
Asml Netherlands Bv |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
EP1494074A1
(de)
*
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7236232B2
(en)
*
|
2003-07-01 |
2007-06-26 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
EP2466382B1
(de)
*
|
2003-07-08 |
2014-11-26 |
Nikon Corporation |
Wafertisch für die Immersionslithografie
|
WO2005006417A1
(ja)
*
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
CN101470362B
(zh)
*
|
2003-07-09 |
2013-01-02 |
株式会社尼康 |
曝光装置以及器件制造方法
|
KR20060026883A
(ko)
*
|
2003-07-09 |
2006-03-24 |
가부시키가이샤 니콘 |
결합장치, 노광장치 및 디바이스 제조방법
|
EP2264532B1
(de)
*
|
2003-07-09 |
2012-10-31 |
Nikon Corporation |
Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung
|
WO2005006418A1
(ja)
*
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
CN101576717B
(zh)
*
|
2003-07-09 |
2013-03-27 |
株式会社尼康 |
曝光装置、器件制造方法
|
US7738074B2
(en)
*
|
2003-07-16 |
2010-06-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1498781B1
(de)
*
|
2003-07-16 |
2019-04-17 |
ASML Netherlands B.V. |
Lithografisches Immersionsgerät und Verfahren zur Herstellung einer Vorrichtung
|
US20060285091A1
(en)
*
|
2003-07-21 |
2006-12-21 |
Parekh Bipin S |
Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application
|
WO2005015315A2
(de)
*
|
2003-07-24 |
2005-02-17 |
Carl Zeiss Smt Ag |
Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
|
EP1500982A1
(de)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
WO2005010960A1
(ja)
*
|
2003-07-25 |
2005-02-03 |
Nikon Corporation |
投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
EP1503244A1
(de)
*
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
|
CN102043350B
(zh)
|
2003-07-28 |
2014-01-29 |
株式会社尼康 |
曝光装置、器件制造方法、及曝光装置的控制方法
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
CN101436000B
(zh)
*
|
2003-07-28 |
2011-05-11 |
株式会社尼康 |
曝光装置、器件制造方法、及曝光装置的控制方法
|
US7779781B2
(en)
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7370659B2
(en)
|
2003-08-06 |
2008-05-13 |
Micron Technology, Inc. |
Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
|
US7061578B2
(en)
*
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
TWI244683B
(en)
*
|
2003-08-11 |
2005-12-01 |
Taiwan Semiconductor Mfg |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7700267B2
(en)
*
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7579135B2
(en)
*
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US6844206B1
(en)
*
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
KR101915921B1
(ko)
*
|
2003-08-21 |
2019-01-07 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
US8149381B2
(en)
|
2003-08-26 |
2012-04-03 |
Nikon Corporation |
Optical element and exposure apparatus
|
SG133590A1
(en)
|
2003-08-26 |
2007-07-30 |
Nikon Corp |
Optical element and exposure device
|
TWI245163B
(en)
*
|
2003-08-29 |
2005-12-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US6954256B2
(en)
*
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
EP3163375B1
(de)
*
|
2003-08-29 |
2019-01-09 |
Nikon Corporation |
Belichtungsvorrichtung und belichtungsverfahren
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
TWI263859B
(en)
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP2261740B1
(de)
|
2003-08-29 |
2014-07-09 |
ASML Netherlands BV |
Lithographischer Apparat
|
EP2804048A1
(de)
|
2003-08-29 |
2014-11-19 |
Nikon Corporation |
Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung
|
US7014966B2
(en)
*
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
KR101238114B1
(ko)
|
2003-09-03 |
2013-02-27 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
JP4517367B2
(ja)
*
|
2003-09-03 |
2010-08-04 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
JP4378136B2
(ja)
*
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP2005083800A
(ja)
*
|
2003-09-05 |
2005-03-31 |
Hitachi Ltd |
欠陥検査方法及び欠陥検査装置
|
JP3870182B2
(ja)
|
2003-09-09 |
2007-01-17 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US20050064679A1
(en)
*
|
2003-09-19 |
2005-03-24 |
Farnworth Warren M. |
Consolidatable composite materials, articles of manufacture formed therefrom, and fabrication methods
|
US7713841B2
(en)
*
|
2003-09-19 |
2010-05-11 |
Micron Technology, Inc. |
Methods for thinning semiconductor substrates that employ support structures formed on the substrates
|
WO2005029559A1
(ja)
*
|
2003-09-19 |
2005-03-31 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
US20050064683A1
(en)
*
|
2003-09-19 |
2005-03-24 |
Farnworth Warren M. |
Method and apparatus for supporting wafers for die singulation and subsequent handling
|
JP4405515B2
(ja)
*
|
2003-09-25 |
2010-01-27 |
インフィネオン テクノロジーズ アクチエンゲゼルシャフト |
液浸リソグラフィー方法および基板露光装置
|
EP1667211B1
(de)
|
2003-09-26 |
2015-09-09 |
Nikon Corporation |
Projektions-belichtungsvorrichtung, reinigungs- und wartungsverfahren für eine projektions-belichtungsvorrichtung und verfahren zum herstellen von bauelementen
|
US7158211B2
(en)
*
|
2003-09-29 |
2007-01-02 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101319108B1
(ko)
*
|
2003-09-29 |
2013-10-17 |
가부시키가이샤 니콘 |
투영 노광 장치, 투영 노광 방법 및 디바이스 제조 방법
|
EP1519230A1
(de)
|
2003-09-29 |
2005-03-30 |
ASML Netherlands B.V. |
Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
|
EP1519231B1
(de)
*
|
2003-09-29 |
2005-12-21 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
TW200518187A
(en)
*
|
2003-09-29 |
2005-06-01 |
Nikon Corp |
Exposure apparatus, exposure method, and device manufacturing method
|
EP1670042A4
(de)
*
|
2003-09-29 |
2008-01-30 |
Nikon Corp |
Linsensystem des flüssigkeits-immersionstyps und projektionsausrichtvorrichtung, bauelementeherstellverfahren
|
JP5136566B2
(ja)
*
|
2003-09-29 |
2013-02-06 |
株式会社ニコン |
露光装置及び露光方法並びにデバイス製造方法
|
JP4513299B2
(ja)
*
|
2003-10-02 |
2010-07-28 |
株式会社ニコン |
露光装置、露光方法、及びデバイス製造方法
|
JP2005136374A
(ja)
*
|
2003-10-06 |
2005-05-26 |
Matsushita Electric Ind Co Ltd |
半導体製造装置及びそれを用いたパターン形成方法
|
EP1672681B8
(de)
*
|
2003-10-08 |
2011-09-21 |
Miyagi Nikon Precision Co., Ltd. |
Belichtungsgerät, substrattrageverfahren, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
|
EP1672682A4
(de)
*
|
2003-10-08 |
2008-10-15 |
Zao Nikon Co Ltd |
Substrat-transport-vorrichtung und -verfahren, belichtungs-vorrichtung und -verfahren und bauelementherstellungsverfahren
|
JP2005136364A
(ja)
*
|
2003-10-08 |
2005-05-26 |
Zao Nikon Co Ltd |
基板搬送装置、露光装置、並びにデバイス製造方法
|
TW201738932A
(zh)
*
|
2003-10-09 |
2017-11-01 |
Nippon Kogaku Kk |
曝光裝置及曝光方法、元件製造方法
|
JP4524601B2
(ja)
*
|
2003-10-09 |
2010-08-18 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
EP1524558A1
(de)
*
|
2003-10-15 |
2005-04-20 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
EP1524557A1
(de)
*
|
2003-10-15 |
2005-04-20 |
ASML Netherlands B.V. |
Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
|
DE602004030365D1
(de)
|
2003-10-22 |
2011-01-13 |
Nippon Kogaku Kk |
Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung
|
DE10394297D2
(de)
*
|
2003-10-22 |
2006-07-06 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
TWI360158B
(en)
|
2003-10-28 |
2012-03-11 |
Nikon Corp |
Projection exposure device,exposure method and dev
|
JP4605014B2
(ja)
*
|
2003-10-28 |
2011-01-05 |
株式会社ニコン |
露光装置、露光方法、デバイスの製造方法
|
US7411653B2
(en)
*
|
2003-10-28 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus
|
EP1528433B1
(de)
*
|
2003-10-28 |
2019-03-06 |
ASML Netherlands B.V. |
Lithographischer Immersionsapparat und Verfahren zum Betrieb davon
|
US7352433B2
(en)
|
2003-10-28 |
2008-04-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP3392713A1
(de)
|
2003-10-31 |
2018-10-24 |
Nikon Corporation |
Immersionsbelichtungsgerät und -verfahren
|
US7113259B2
(en)
*
|
2003-10-31 |
2006-09-26 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2005159322A
(ja)
*
|
2003-10-31 |
2005-06-16 |
Nikon Corp |
定盤、ステージ装置及び露光装置並びに露光方法
|
US7924397B2
(en)
*
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
EP1531362A3
(de)
*
|
2003-11-13 |
2007-07-25 |
Matsushita Electric Industrial Co., Ltd. |
Vorrichtung zur Herstellung von Halbleitern und Methode zur Bildung von Mustern
|
JP2005150290A
(ja)
*
|
2003-11-13 |
2005-06-09 |
Canon Inc |
露光装置およびデバイスの製造方法
|
JP4295712B2
(ja)
|
2003-11-14 |
2009-07-15 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ装置及び装置製造方法
|
JP2007511778A
(ja)
*
|
2003-11-18 |
2007-05-10 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
位置決め装置及び方法
|
TWI385414B
(zh)
|
2003-11-20 |
2013-02-11 |
尼康股份有限公司 |
光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
|
US7545481B2
(en)
*
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101394764B1
(ko)
|
2003-12-03 |
2014-05-27 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품
|
JP2005175016A
(ja)
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
CN100487860C
(zh)
*
|
2003-12-15 |
2009-05-13 |
株式会社尼康 |
台装置、曝光装置和曝光方法
|
US7245357B2
(en)
*
|
2003-12-15 |
2007-07-17 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005057635A1
(ja)
*
|
2003-12-15 |
2005-06-23 |
Nikon Corporation |
投影露光装置及びステージ装置、並びに露光方法
|
US20070081133A1
(en)
*
|
2004-12-14 |
2007-04-12 |
Niikon Corporation |
Projection exposure apparatus and stage unit, and exposure method
|
JP4600286B2
(ja)
*
|
2003-12-16 |
2010-12-15 |
株式会社ニコン |
ステージ装置、露光装置、及び露光方法
|
JP4615210B2
(ja)
*
|
2003-12-16 |
2011-01-19 |
財団法人国際科学振興財団 |
液浸型露光装置
|
JP4308638B2
(ja)
|
2003-12-17 |
2009-08-05 |
パナソニック株式会社 |
パターン形成方法
|
US7460206B2
(en)
*
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
US7589818B2
(en)
*
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
CN100555083C
(zh)
*
|
2003-12-23 |
2009-10-28 |
皇家飞利浦电子股份有限公司 |
用于浸入式光刻的可除去薄膜
|
US7394521B2
(en)
*
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7324274B2
(en)
*
|
2003-12-24 |
2008-01-29 |
Nikon Corporation |
Microscope and immersion objective lens
|
US20050147920A1
(en)
*
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
JP4774735B2
(ja)
*
|
2004-01-05 |
2011-09-14 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
JP4371822B2
(ja)
*
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
JP4429023B2
(ja)
*
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP4194495B2
(ja)
*
|
2004-01-07 |
2008-12-10 |
東京エレクトロン株式会社 |
塗布・現像装置
|
US20050153424A1
(en)
*
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
ATE459898T1
(de)
|
2004-01-20 |
2010-03-15 |
Zeiss Carl Smt Ag |
Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
|
JP4319189B2
(ja)
|
2004-01-26 |
2009-08-26 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
US7589822B2
(en)
|
2004-02-02 |
2009-09-15 |
Nikon Corporation |
Stage drive method and stage unit, exposure apparatus, and device manufacturing method
|
KR101227211B1
(ko)
*
|
2004-02-03 |
2013-01-28 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
US20070058146A1
(en)
*
|
2004-02-04 |
2007-03-15 |
Nikon Corporation |
Exposure apparatus, exposure method, position control method, and method for producing device
|
JP5167572B2
(ja)
*
|
2004-02-04 |
2013-03-21 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
KR20120003511A
(ko)
*
|
2004-02-04 |
2012-01-10 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
TWI437618B
(zh)
|
2004-02-06 |
2014-05-11 |
尼康股份有限公司 |
偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
|
KR101118787B1
(ko)
*
|
2004-02-09 |
2012-03-20 |
요시히코 오카모토 |
노광 장치 및 이를 이용한 반도체 장치의 제조 방법
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7557900B2
(en)
|
2004-02-10 |
2009-07-07 |
Nikon Corporation |
Exposure apparatus, device manufacturing method, maintenance method, and exposure method
|
JP4479911B2
(ja)
*
|
2004-02-18 |
2010-06-09 |
株式会社ニコン |
駆動方法、露光方法及び露光装置、並びにデバイス製造方法
|
US20070030467A1
(en)
*
|
2004-02-19 |
2007-02-08 |
Nikon Corporation |
Exposure apparatus, exposure method, and device fabricating method
|
WO2005081291A1
(ja)
*
|
2004-02-19 |
2005-09-01 |
Nikon Corporation |
露光装置及びデバイスの製造方法
|
JP4720743B2
(ja)
*
|
2004-02-19 |
2011-07-13 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
JP4974049B2
(ja)
*
|
2004-02-20 |
2012-07-11 |
株式会社ニコン |
露光方法、露光装置、並びにデバイス製造方法
|
EP1727188A4
(de)
*
|
2004-02-20 |
2008-11-26 |
Nikon Corp |
Belichtungsvorrichtung, zuführungsverfahren und rückgewinnungsverfahren, belichtungsverfahren und vorrichtungsherstellungsverfahren
|
US20050186513A1
(en)
*
|
2004-02-24 |
2005-08-25 |
Martin Letz |
Liquid and method for liquid immersion lithography
|
US7741012B1
(en)
|
2004-03-01 |
2010-06-22 |
Advanced Micro Devices, Inc. |
Method for removal of immersion lithography medium in immersion lithography processes
|
US7215431B2
(en)
*
|
2004-03-04 |
2007-05-08 |
Therma-Wave, Inc. |
Systems and methods for immersion metrology
|
JP4622340B2
(ja)
*
|
2004-03-04 |
2011-02-02 |
株式会社ニコン |
露光装置、デバイス製造方法
|
JP2005259870A
(ja)
*
|
2004-03-10 |
2005-09-22 |
Nikon Corp |
基板保持装置、ステージ装置及び露光装置並びに露光方法
|
US8488102B2
(en)
*
|
2004-03-18 |
2013-07-16 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
WO2005093792A1
(ja)
*
|
2004-03-25 |
2005-10-06 |
Nikon Corporation |
露光装置及び露光方法、並びにデバイス製造方法
|
KR101441777B1
(ko)
|
2004-03-25 |
2014-09-22 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
JP2005286068A
(ja)
|
2004-03-29 |
2005-10-13 |
Canon Inc |
露光装置及び方法
|
TW200605191A
(en)
*
|
2004-03-30 |
2006-02-01 |
Nikon Corp |
Exposure apparatus, exposure method, device manufacturing method, and surface shape detecting device
|
JP4535489B2
(ja)
*
|
2004-03-31 |
2010-09-01 |
東京エレクトロン株式会社 |
塗布・現像装置
|
US7034917B2
(en)
*
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
US7227619B2
(en)
*
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7295283B2
(en)
*
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7898642B2
(en)
*
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20050231695A1
(en)
*
|
2004-04-15 |
2005-10-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method and system for immersion lithography using high PH immersion fluid
|
JP4677986B2
(ja)
*
|
2004-04-19 |
2011-04-27 |
株式会社ニコン |
ノズル部材、露光方法、露光装置及びデバイス製造方法
|
KR100557222B1
(ko)
*
|
2004-04-28 |
2006-03-07 |
동부아남반도체 주식회사 |
이머전 리소그라피 공정의 액체 제거 장치 및 방법
|
US7244665B2
(en)
*
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
US7379159B2
(en)
*
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1747499A2
(de)
|
2004-05-04 |
2007-01-31 |
Nikon Corporation |
Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie
|
US7616383B2
(en)
*
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7486381B2
(en)
*
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN101833247B
(zh)
|
2004-06-04 |
2013-11-06 |
卡尔蔡司Smt有限责任公司 |
微光刻投影曝光系统的投影物镜的光学测量的测量系统
|
US20070103661A1
(en)
*
|
2004-06-04 |
2007-05-10 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
EP1768169B9
(de)
*
|
2004-06-04 |
2013-03-06 |
Nikon Corporation |
Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung eines bauelementes
|
US20080192226A1
(en)
*
|
2004-06-07 |
2008-08-14 |
Nikon Corporation |
Stage Unit, Exposure Apparatus, and Exposure Method
|
JP2005353762A
(ja)
|
2004-06-09 |
2005-12-22 |
Matsushita Electric Ind Co Ltd |
半導体製造装置及びパターン形成方法
|
KR101512884B1
(ko)
|
2004-06-09 |
2015-04-16 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
SG153813A1
(en)
*
|
2004-06-09 |
2009-07-29 |
Nikon Corp |
Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate
|
US20070139628A1
(en)
*
|
2004-06-10 |
2007-06-21 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
US8373843B2
(en)
*
|
2004-06-10 |
2013-02-12 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
US8508713B2
(en)
*
|
2004-06-10 |
2013-08-13 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
KR101700546B1
(ko)
|
2004-06-10 |
2017-01-26 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법, 및 디바이스 제조 방법
|
US20070222959A1
(en)
*
|
2004-06-10 |
2007-09-27 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
US8717533B2
(en)
*
|
2004-06-10 |
2014-05-06 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
KR20180072867A
(ko)
|
2004-06-10 |
2018-06-29 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
JP4543767B2
(ja)
*
|
2004-06-10 |
2010-09-15 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
US7481867B2
(en)
|
2004-06-16 |
2009-01-27 |
Edwards Limited |
Vacuum system for immersion photolithography
|
US7688421B2
(en)
*
|
2004-06-17 |
2010-03-30 |
Nikon Corporation |
Fluid pressure compensation for immersion lithography lens
|
US8698998B2
(en)
*
|
2004-06-21 |
2014-04-15 |
Nikon Corporation |
Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
|
JP5119666B2
(ja)
|
2004-06-21 |
2013-01-16 |
株式会社ニコン |
露光装置、液体除去方法、及びデバイス製造方法
|
EP3190605B1
(de)
*
|
2004-06-21 |
2018-05-09 |
Nikon Corporation |
Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
|
US7517639B2
(en)
*
|
2004-06-23 |
2009-04-14 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Seal ring arrangements for immersion lithography systems
|
JP4532545B2
(ja)
|
2004-06-29 |
2010-08-25 |
カール・ツァイス・エスエムティー・アーゲー |
光学素子のための位置決めユニット及び調節デバイス
|
US7463330B2
(en)
|
2004-07-07 |
2008-12-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
ATE441937T1
(de)
*
|
2004-07-12 |
2009-09-15 |
Nikon Corp |
Belichtungsgerät und bauelemente- herstellungsverfahren
|
EP1780773A4
(de)
*
|
2004-07-12 |
2008-03-05 |
Nikon Corp |
Verfahren zur bestimmung von belichtungsbedingungen, belichtungsverfahren, belichtungsvorrichtung und verfahren zur herstellung eines bauelements
|
JPWO2006009064A1
(ja)
*
|
2004-07-16 |
2008-05-01 |
株式会社ニコン |
光学部材の支持方法及び支持構造、光学装置、露光装置、並びにデバイス製造方法
|
US7161663B2
(en)
*
|
2004-07-22 |
2007-01-09 |
Asml Netherlands B.V. |
Lithographic apparatus
|
US7224427B2
(en)
*
|
2004-08-03 |
2007-05-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Megasonic immersion lithography exposure apparatus and method
|
CN101002127B
(zh)
*
|
2004-08-03 |
2012-07-04 |
株式会社尼康 |
投影光学系统、曝光装置以及曝光方法
|
EP2226682A3
(de)
*
|
2004-08-03 |
2014-12-24 |
Nikon Corporation |
Belichtungsvorrichtung, Belichtungsverfahren und Verfahren zur Vorrichtungsherstellung
|
TW200615716A
(en)
*
|
2004-08-05 |
2006-05-16 |
Nikon Corp |
Stage device and exposure device
|
US7304715B2
(en)
|
2004-08-13 |
2007-12-04 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR20070048164A
(ko)
*
|
2004-08-18 |
2007-05-08 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
US7701550B2
(en)
|
2004-08-19 |
2010-04-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20060044533A1
(en)
*
|
2004-08-27 |
2006-03-02 |
Asmlholding N.V. |
System and method for reducing disturbances caused by movement in an immersion lithography system
|
US20060046211A1
(en)
*
|
2004-08-27 |
2006-03-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Effectively water-free immersion lithography
|
JP4772306B2
(ja)
*
|
2004-09-06 |
2011-09-14 |
株式会社東芝 |
液浸光学装置及び洗浄方法
|
JP2006080143A
(ja)
|
2004-09-07 |
2006-03-23 |
Matsushita Electric Ind Co Ltd |
露光装置及びパターン形成方法
|
US8675174B2
(en)
|
2004-09-17 |
2014-03-18 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
JPWO2006030910A1
(ja)
*
|
2004-09-17 |
2008-05-15 |
株式会社ニコン |
露光用基板、露光方法及びデバイス製造方法
|
KR101106496B1
(ko)
*
|
2004-09-17 |
2012-01-20 |
가부시키가이샤 니콘 |
기판 유지 장치, 노광 장치 및 디바이스 제조 방법
|
US7133114B2
(en)
*
|
2004-09-20 |
2006-11-07 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20060060653A1
(en)
*
|
2004-09-23 |
2006-03-23 |
Carl Wittenberg |
Scanner system and method for simultaneously acquiring data images from multiple object planes
|
US7522261B2
(en)
*
|
2004-09-24 |
2009-04-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7355674B2
(en)
*
|
2004-09-28 |
2008-04-08 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and computer program product
|
US7894040B2
(en)
*
|
2004-10-05 |
2011-02-22 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7209213B2
(en)
*
|
2004-10-07 |
2007-04-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2006040890A1
(ja)
*
|
2004-10-08 |
2006-04-20 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
EP1808884A4
(de)
|
2004-10-13 |
2009-12-30 |
Nikon Corp |
Belichtungsvorrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren
|
JP4961709B2
(ja)
*
|
2004-10-13 |
2012-06-27 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
JP2006190971A
(ja)
*
|
2004-10-13 |
2006-07-20 |
Nikon Corp |
露光装置、露光方法及びデバイス製造方法
|
TW200628995A
(en)
*
|
2004-10-13 |
2006-08-16 |
Nikon Corp |
Exposure device, exposure method, and device manufacturing method
|
EP3306647A1
(de)
*
|
2004-10-15 |
2018-04-11 |
Nikon Corporation |
Belichtungsvorrichtung und vorrichtungsherstellungsverfahren
|
DE102004050642B4
(de)
*
|
2004-10-18 |
2007-04-12 |
Infineon Technologies Ag |
Verfahren zur Überwachung von Parametern eines Belichtungsgerätes für die Immersionslithographie und Belichtungsgerät für die Immersionslithographie
|
US7119876B2
(en)
*
|
2004-10-18 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7379155B2
(en)
|
2004-10-18 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20070242248A1
(en)
*
|
2004-10-26 |
2007-10-18 |
Nikon Corporation |
Substrate processing method, exposure apparatus, and method for producing device
|
EP1814144B1
(de)
*
|
2004-10-26 |
2012-06-06 |
Nikon Corporation |
Substratverarbeitungsverfahren und system zur fertigung von bauelementen
|
CN100533662C
(zh)
|
2004-11-01 |
2009-08-26 |
株式会社尼康 |
曝光装置及器件制造方法
|
JP2006310724A
(ja)
*
|
2004-11-10 |
2006-11-09 |
Dainippon Screen Mfg Co Ltd |
基板処理装置および基板処理方法
|
JP5008280B2
(ja)
*
|
2004-11-10 |
2012-08-22 |
株式会社Sokudo |
基板処理装置および基板処理方法
|
KR20070085214A
(ko)
|
2004-11-11 |
2007-08-27 |
가부시키가이샤 니콘 |
노광 방법, 디바이스 제조 방법, 및 기판
|
US7251013B2
(en)
|
2004-11-12 |
2007-07-31 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7583357B2
(en)
*
|
2004-11-12 |
2009-09-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7423720B2
(en)
|
2004-11-12 |
2008-09-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7414699B2
(en)
*
|
2004-11-12 |
2008-08-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7411657B2
(en)
*
|
2004-11-17 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7230681B2
(en)
*
|
2004-11-18 |
2007-06-12 |
International Business Machines Corporation |
Method and apparatus for immersion lithography
|
TWI649790B
(zh)
*
|
2004-11-18 |
2019-02-01 |
日商尼康股份有限公司 |
位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
|
US20070285634A1
(en)
*
|
2004-11-19 |
2007-12-13 |
Nikon Corporation |
Maintenance Method, Exposure Method, Exposure Apparatus, And Method For Producing Device
|
US7145630B2
(en)
*
|
2004-11-23 |
2006-12-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7732123B2
(en)
*
|
2004-11-23 |
2010-06-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion photolithography with megasonic rinse
|
US7623218B2
(en)
*
|
2004-11-24 |
2009-11-24 |
Carl Zeiss Smt Ag |
Method of manufacturing a miniaturized device
|
CN101576716A
(zh)
*
|
2004-11-25 |
2009-11-11 |
株式会社尼康 |
移动体系统、曝光装置及组件制造方法
|
US7289193B1
(en)
*
|
2004-12-01 |
2007-10-30 |
Advanced Micro Devices, Inc. |
Frame structure for turbulence control in immersion lithography
|
US7256121B2
(en)
*
|
2004-12-02 |
2007-08-14 |
Texas Instruments Incorporated |
Contact resistance reduction by new barrier stack process
|
WO2006059636A1
(ja)
*
|
2004-12-02 |
2006-06-08 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP4720747B2
(ja)
*
|
2004-12-02 |
2011-07-13 |
株式会社ニコン |
露光装置、露光方法、及びデバイス製造方法
|
US7161654B2
(en)
*
|
2004-12-02 |
2007-01-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20060122038A1
(en)
*
|
2004-12-03 |
2006-06-08 |
Tsai Lien Chou Lin |
Folding and inclination adjustable device for treadmills
|
US7446850B2
(en)
*
|
2004-12-03 |
2008-11-04 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4926433B2
(ja)
|
2004-12-06 |
2012-05-09 |
株式会社Sokudo |
基板処理装置および基板処理方法
|
WO2006062074A1
(ja)
*
|
2004-12-06 |
2006-06-15 |
Nikon Corporation |
基板処理方法、露光方法、露光装置及びデバイス製造方法
|
JP5154007B2
(ja)
|
2004-12-06 |
2013-02-27 |
株式会社Sokudo |
基板処理装置
|
JP4794232B2
(ja)
*
|
2004-12-06 |
2011-10-19 |
株式会社Sokudo |
基板処理装置
|
KR101339887B1
(ko)
*
|
2004-12-06 |
2013-12-10 |
가부시키가이샤 니콘 |
메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
|
US7397533B2
(en)
|
2004-12-07 |
2008-07-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20080100811A1
(en)
*
|
2004-12-07 |
2008-05-01 |
Chiaki Nakagawa |
Exposure Apparatus and Device Manufacturing Method
|
US7248334B2
(en)
*
|
2004-12-07 |
2007-07-24 |
Asml Netherlands B.V. |
Sensor shield
|
US7196770B2
(en)
*
|
2004-12-07 |
2007-03-27 |
Asml Netherlands B.V. |
Prewetting of substrate before immersion exposure
|
US7365827B2
(en)
|
2004-12-08 |
2008-04-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4752473B2
(ja)
*
|
2004-12-09 |
2011-08-17 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
US7352440B2
(en)
|
2004-12-10 |
2008-04-01 |
Asml Netherlands B.V. |
Substrate placement in immersion lithography
|
US7403261B2
(en)
*
|
2004-12-15 |
2008-07-22 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US9224632B2
(en)
|
2004-12-15 |
2015-12-29 |
Nikon Corporation |
Substrate holding apparatus, exposure apparatus, and device fabricating method
|
US7880860B2
(en)
*
|
2004-12-20 |
2011-02-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7528931B2
(en)
|
2004-12-20 |
2009-05-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7491661B2
(en)
*
|
2004-12-28 |
2009-02-17 |
Asml Netherlands B.V. |
Device manufacturing method, top coat material and substrate
|
US7405805B2
(en)
|
2004-12-28 |
2008-07-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20060147821A1
(en)
|
2004-12-30 |
2006-07-06 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7450217B2
(en)
*
|
2005-01-12 |
2008-11-11 |
Asml Netherlands B.V. |
Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
JP2006196575A
(ja)
*
|
2005-01-12 |
2006-07-27 |
Jsr Corp |
液浸型露光方法によるレジストパターン形成方法
|
CN1804724A
(zh)
*
|
2005-01-14 |
2006-07-19 |
朱晓 |
芯片光刻制程中油浸式曝光方法
|
SG124351A1
(en)
|
2005-01-14 |
2006-08-30 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
SG124359A1
(en)
|
2005-01-14 |
2006-08-30 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JPWO2006077859A1
(ja)
*
|
2005-01-18 |
2008-06-19 |
株式会社ニコン |
液体除去装置、露光装置、及びデバイス製造方法
|
US20080129970A1
(en)
*
|
2005-01-25 |
2008-06-05 |
Taiichi Furukawa |
Immersion Exposure System, and Recycle Method and Supply Method of Liquid for Immersion Exposure
|
EP3079164A1
(de)
*
|
2005-01-31 |
2016-10-12 |
Nikon Corporation |
Belichtungsvorrichtung und herstellungsverfahren einer vorrichtung
|
US8692973B2
(en)
*
|
2005-01-31 |
2014-04-08 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
EP1850371A4
(de)
*
|
2005-01-31 |
2011-01-19 |
Nikon Corp |
Belichtungsverfahren, belichtungsvorrichtung und verfahren zur bauelementeherstellung
|
CN101128775B
(zh)
|
2005-02-10 |
2012-07-25 |
Asml荷兰有限公司 |
浸没液体、曝光装置及曝光方法
|
US20070258068A1
(en)
*
|
2005-02-17 |
2007-11-08 |
Hiroto Horikawa |
Exposure Apparatus, Exposure Method, and Device Fabricating Method
|
US8018573B2
(en)
*
|
2005-02-22 |
2011-09-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7378025B2
(en)
*
|
2005-02-22 |
2008-05-27 |
Asml Netherlands B.V. |
Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
|
US7224431B2
(en)
*
|
2005-02-22 |
2007-05-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7282701B2
(en)
|
2005-02-28 |
2007-10-16 |
Asml Netherlands B.V. |
Sensor for use in a lithographic apparatus
|
JP2006270057A
(ja)
*
|
2005-02-28 |
2006-10-05 |
Canon Inc |
露光装置
|
US7428038B2
(en)
|
2005-02-28 |
2008-09-23 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
|
US7324185B2
(en)
|
2005-03-04 |
2008-01-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7684010B2
(en)
*
|
2005-03-09 |
2010-03-23 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
|
KR20070115859A
(ko)
*
|
2005-03-18 |
2007-12-06 |
가부시키가이샤 니콘 |
노광 방법 및 노광 장치, 디바이스 제조 방법, 그리고 노광장치의 평가 방법
|
JP2006261606A
(ja)
*
|
2005-03-18 |
2006-09-28 |
Canon Inc |
露光装置、露光方法及びデバイス製造方法
|
TWI424260B
(zh)
*
|
2005-03-18 |
2014-01-21 |
尼康股份有限公司 |
A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method
|
US7330238B2
(en)
*
|
2005-03-28 |
2008-02-12 |
Asml Netherlands, B.V. |
Lithographic apparatus, immersion projection apparatus and device manufacturing method
|
WO2006106832A1
(ja)
*
|
2005-03-30 |
2006-10-12 |
Nikon Corporation |
露光条件の決定方法、露光方法及び露光装置、並びにデバイス製造方法
|
KR20070115860A
(ko)
*
|
2005-03-30 |
2007-12-06 |
가부시키가이샤 니콘 |
노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
|
JP4888388B2
(ja)
*
|
2005-03-31 |
2012-02-29 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
TW200644079A
(en)
*
|
2005-03-31 |
2006-12-16 |
Nikon Corp |
Exposure apparatus, exposure method, and device production method
|
US7411654B2
(en)
|
2005-04-05 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7291850B2
(en)
*
|
2005-04-08 |
2007-11-06 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
USRE43576E1
(en)
|
2005-04-08 |
2012-08-14 |
Asml Netherlands B.V. |
Dual stage lithographic apparatus and device manufacturing method
|
KR101555707B1
(ko)
|
2005-04-18 |
2015-09-25 |
가부시키가이샤 니콘 |
노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
|
US20060232753A1
(en)
*
|
2005-04-19 |
2006-10-19 |
Asml Holding N.V. |
Liquid immersion lithography system with tilted liquid flow
|
WO2006115186A1
(ja)
*
|
2005-04-25 |
2006-11-02 |
Nikon Corporation |
露光方法及び露光装置、並びにデバイス製造方法
|
JP4918858B2
(ja)
*
|
2005-04-27 |
2012-04-18 |
株式会社ニコン |
露光方法、露光装置、デバイス製造方法、及び膜の評価方法
|
EP2527921A3
(de)
*
|
2005-04-28 |
2017-10-18 |
Nikon Corporation |
Belichtungsverfahren und Belichtungsapparat
|
US20090135382A1
(en)
*
|
2005-04-28 |
2009-05-28 |
Nikon Corporation |
Exposure method, exposure apparatus, and method for producing device
|
US7317507B2
(en)
*
|
2005-05-03 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7433016B2
(en)
|
2005-05-03 |
2008-10-07 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20060250588A1
(en)
*
|
2005-05-03 |
2006-11-09 |
Stefan Brandl |
Immersion exposure tool cleaning system and method
|
US8248577B2
(en)
*
|
2005-05-03 |
2012-08-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2006319064A
(ja)
*
|
2005-05-11 |
2006-11-24 |
Canon Inc |
測定装置、露光方法及び装置
|
EP2660854B1
(de)
|
2005-05-12 |
2017-06-21 |
Nikon Corporation |
Optisches Projektionssystem, Belichtungsvorrichtung und Belichtungsverfahren
|
JP4718893B2
(ja)
|
2005-05-13 |
2011-07-06 |
株式会社東芝 |
パターン形成方法
|
US7265815B2
(en)
*
|
2005-05-19 |
2007-09-04 |
Asml Holding N.V. |
System and method utilizing an illumination beam adjusting system
|
DE102005024163A1
(de)
*
|
2005-05-23 |
2006-11-30 |
Carl Zeiss Smt Ag |
Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
|
KR100638107B1
(ko)
*
|
2005-06-09 |
2006-10-24 |
연세대학교 산학협력단 |
이머젼 박막층을 구비하는 광변조 미세개구 어레이 장치 및이를 이용한 고속 미세패턴 기록시스템
|
WO2006133800A1
(en)
|
2005-06-14 |
2006-12-21 |
Carl Zeiss Smt Ag |
Lithography projection objective, and a method for correcting image defects of the same
|
US7652746B2
(en)
*
|
2005-06-21 |
2010-01-26 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7751027B2
(en)
|
2005-06-21 |
2010-07-06 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20070085989A1
(en)
*
|
2005-06-21 |
2007-04-19 |
Nikon Corporation |
Exposure apparatus and exposure method, maintenance method, and device manufacturing method
|
US7924416B2
(en)
*
|
2005-06-22 |
2011-04-12 |
Nikon Corporation |
Measurement apparatus, exposure apparatus, and device manufacturing method
|
US7468779B2
(en)
*
|
2005-06-28 |
2008-12-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7834974B2
(en)
|
2005-06-28 |
2010-11-16 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20080204682A1
(en)
*
|
2005-06-28 |
2008-08-28 |
Nikon Corporation |
Exposure method and exposure apparatus, and device manufacturing method
|
US7474379B2
(en)
*
|
2005-06-28 |
2009-01-06 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JPWO2007000995A1
(ja)
*
|
2005-06-28 |
2009-01-22 |
株式会社ニコン |
露光装置及び方法、並びにデバイス製造方法
|
JP2007012375A
(ja)
*
|
2005-06-29 |
2007-01-18 |
Toyota Motor Corp |
燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法
|
WO2007001045A1
(ja)
*
|
2005-06-29 |
2007-01-04 |
Nikon Corporation |
露光装置、基板処理方法、及びデバイス製造方法
|
US7522258B2
(en)
|
2005-06-29 |
2009-04-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination
|
US20070004182A1
(en)
*
|
2005-06-30 |
2007-01-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods and system for inhibiting immersion lithography defect formation
|
KR20080026082A
(ko)
*
|
2005-06-30 |
2008-03-24 |
가부시키가이샤 니콘 |
노광장치 및 방법, 노광장치의 메인터넌스 방법 및디바이스 제조방법
|
US7583358B2
(en)
|
2005-07-25 |
2009-09-01 |
Micron Technology, Inc. |
Systems and methods for retrieving residual liquid during immersion lens photolithography
|
US7535644B2
(en)
*
|
2005-08-12 |
2009-05-19 |
Asml Netherlands B.V. |
Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
US8054445B2
(en)
*
|
2005-08-16 |
2011-11-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2007023813A1
(ja)
|
2005-08-23 |
2007-03-01 |
Nikon Corporation |
露光装置及び露光方法、並びにデバイス製造方法
|
EP1944122A4
(de)
*
|
2005-08-26 |
2014-07-30 |
Nikon Corp |
Haltevorrichtung, montagesystem, sputtervorrichtung, bearbeitungsverfahren und bearbeitungsvorrichtung
|
US8070145B2
(en)
|
2005-08-26 |
2011-12-06 |
Nikon Corporation |
Holding unit, assembly system, sputtering unit, and processing method and processing unit
|
US7456928B2
(en)
*
|
2005-08-29 |
2008-11-25 |
Micron Technology, Inc. |
Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
|
US7812926B2
(en)
*
|
2005-08-31 |
2010-10-12 |
Nikon Corporation |
Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
|
US8111374B2
(en)
*
|
2005-09-09 |
2012-02-07 |
Nikon Corporation |
Analysis method, exposure method, and device manufacturing method
|
EP1933371A1
(de)
*
|
2005-09-09 |
2008-06-18 |
Nikon Corporation |
Belichtungsvorrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren
|
KR20080065609A
(ko)
*
|
2005-09-13 |
2008-07-14 |
칼 짜이스 에스엠테 아게 |
마이크로리소그래픽 투사 노광 장치에서 광학 결상 특성을설정하는 방법 및 이러한 타입의 투사 노광 장치
|
US20070070323A1
(en)
*
|
2005-09-21 |
2007-03-29 |
Nikon Corporation |
Exposure apparatus, exposure method, and device fabricating method
|
US7357768B2
(en)
*
|
2005-09-22 |
2008-04-15 |
William Marshall |
Recliner exerciser
|
US8202460B2
(en)
*
|
2005-09-22 |
2012-06-19 |
International Business Machines Corporation |
Microelectronic substrate having removable edge extension element
|
JP4761907B2
(ja)
|
2005-09-28 |
2011-08-31 |
株式会社Sokudo |
基板処理装置
|
JP4804950B2
(ja)
*
|
2005-09-26 |
2011-11-02 |
東京応化工業株式会社 |
有機膜の液浸リソグラフィ溶解成分測定方法
|
US7411658B2
(en)
*
|
2005-10-06 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2007109741A
(ja)
*
|
2005-10-11 |
2007-04-26 |
Canon Inc |
露光装置及び露光方法
|
JP2009009954A
(ja)
*
|
2005-10-18 |
2009-01-15 |
Nikon Corp |
露光装置及び露光方法
|
US20070127135A1
(en)
*
|
2005-11-01 |
2007-06-07 |
Nikon Corporation |
Exposure apparatus, exposure method and device manufacturing method
|
US20070127002A1
(en)
*
|
2005-11-09 |
2007-06-07 |
Nikon Corporation |
Exposure apparatus and method, and device manufacturing method
|
US7656501B2
(en)
*
|
2005-11-16 |
2010-02-02 |
Asml Netherlands B.V. |
Lithographic apparatus
|
US7864292B2
(en)
|
2005-11-16 |
2011-01-04 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7804577B2
(en)
|
2005-11-16 |
2010-09-28 |
Asml Netherlands B.V. |
Lithographic apparatus
|
US7803516B2
(en)
*
|
2005-11-21 |
2010-09-28 |
Nikon Corporation |
Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
|
US7633073B2
(en)
*
|
2005-11-23 |
2009-12-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7773195B2
(en)
*
|
2005-11-29 |
2010-08-10 |
Asml Holding N.V. |
System and method to increase surface tension and contact angle in immersion lithography
|
US8125610B2
(en)
|
2005-12-02 |
2012-02-28 |
ASML Metherlands B.V. |
Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
|
US20070124987A1
(en)
*
|
2005-12-05 |
2007-06-07 |
Brown Jeffrey K |
Electronic pest control apparatus
|
KR100768849B1
(ko)
*
|
2005-12-06 |
2007-10-22 |
엘지전자 주식회사 |
계통 연계형 연료전지 시스템의 전원공급장치 및 방법
|
US7420194B2
(en)
|
2005-12-27 |
2008-09-02 |
Asml Netherlands B.V. |
Lithographic apparatus and substrate edge seal
|
US7839483B2
(en)
*
|
2005-12-28 |
2010-11-23 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a control system
|
US7242454B1
(en)
*
|
2005-12-28 |
2007-07-10 |
Asml Netherlands B.V. |
Lithographic apparatus, and apparatus and method for measuring an object position in a medium
|
US8411271B2
(en)
*
|
2005-12-28 |
2013-04-02 |
Nikon Corporation |
Pattern forming method, pattern forming apparatus, and device manufacturing method
|
US7649611B2
(en)
|
2005-12-30 |
2010-01-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US8472004B2
(en)
|
2006-01-18 |
2013-06-25 |
Micron Technology, Inc. |
Immersion photolithography scanner
|
EP1983555B1
(de)
*
|
2006-01-19 |
2014-05-28 |
Nikon Corporation |
Antriebsverfahren eines beweglichen körpers, antriebssystem eines beweglichen körpers, strukturerzeugungsverfahren, strukturbildungsvorrichtung, belichtungsverfahren, belichtungsvorrichtung und bauelementeherstellungsverfahren
|
US7848516B2
(en)
*
|
2006-01-20 |
2010-12-07 |
Chiou-Haun Lee |
Diffused symmetric encryption/decryption method with asymmetric keys
|
KR100870791B1
(ko)
*
|
2006-02-15 |
2008-11-27 |
캐논 가부시끼가이샤 |
노광장치, 노광방법 및 노광시스템
|
US8134681B2
(en)
*
|
2006-02-17 |
2012-03-13 |
Nikon Corporation |
Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
|
CN101385121B
(zh)
|
2006-02-21 |
2011-04-20 |
株式会社尼康 |
图案形成装置及图案形成方法、移动体驱动系统及移动体驱动方法、曝光装置及曝光方法、以及组件制造方法
|
EP3279739A1
(de)
|
2006-02-21 |
2018-02-07 |
Nikon Corporation |
Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
|
SG178791A1
(en)
|
2006-02-21 |
2012-03-29 |
Nikon Corp |
Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
|
US7893047B2
(en)
*
|
2006-03-03 |
2011-02-22 |
Arch Chemicals, Inc. |
Biocide composition comprising pyrithione and pyrrole derivatives
|
US8045134B2
(en)
*
|
2006-03-13 |
2011-10-25 |
Asml Netherlands B.V. |
Lithographic apparatus, control system and device manufacturing method
|
KR20080114691A
(ko)
*
|
2006-03-13 |
2008-12-31 |
가부시키가이샤 니콘 |
노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
|
US9477158B2
(en)
*
|
2006-04-14 |
2016-10-25 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
DE102006021797A1
(de)
*
|
2006-05-09 |
2007-11-15 |
Carl Zeiss Smt Ag |
Optische Abbildungseinrichtung mit thermischer Dämpfung
|
US8477283B2
(en)
*
|
2006-05-10 |
2013-07-02 |
Nikon Corporation |
Exposure apparatus and device manufacturing method
|
US7602471B2
(en)
*
|
2006-05-17 |
2009-10-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Apparatus and method for particle monitoring in immersion lithography
|
US7969548B2
(en)
*
|
2006-05-22 |
2011-06-28 |
Asml Netherlands B.V. |
Lithographic apparatus and lithographic apparatus cleaning method
|
JPWO2007139017A1
(ja)
*
|
2006-05-29 |
2009-10-08 |
株式会社ニコン |
液体回収部材、基板保持部材、露光装置、及びデバイス製造方法
|
CN100456138C
(zh)
*
|
2006-06-13 |
2009-01-28 |
上海微电子装备有限公司 |
浸没式光刻机浸液流场维持系统
|
US8570484B2
(en)
*
|
2006-08-30 |
2013-10-29 |
Nikon Corporation |
Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
|
CN101410945B
(zh)
*
|
2006-08-31 |
2013-03-27 |
株式会社尼康 |
与移动体驱动、图案形成、曝光相关的方法和装置
|
KR101585370B1
(ko)
|
2006-08-31 |
2016-01-14 |
가부시키가이샤 니콘 |
이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
|
TWI610149B
(zh)
*
|
2006-08-31 |
2018-01-01 |
Nikon Corp |
移動體驅動系統及移動體驅動方法、圖案形成裝置及方法、曝光裝置及方法、元件製造方法、以及決定方法
|
EP2071613B1
(de)
|
2006-09-01 |
2019-01-23 |
Nikon Corporation |
Belichtungsverfahren und vorrichtung
|
KR101477471B1
(ko)
|
2006-09-01 |
2014-12-29 |
가부시키가이샤 니콘 |
이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
|
US7826030B2
(en)
*
|
2006-09-07 |
2010-11-02 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7872730B2
(en)
*
|
2006-09-15 |
2011-01-18 |
Nikon Corporation |
Immersion exposure apparatus and immersion exposure method, and device manufacturing method
|
US8253922B2
(en)
|
2006-11-03 |
2012-08-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography system using a sealed wafer bath
|
US8208116B2
(en)
|
2006-11-03 |
2012-06-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography system using a sealed wafer bath
|
JP5055971B2
(ja)
*
|
2006-11-16 |
2012-10-24 |
株式会社ニコン |
表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
|
US7973910B2
(en)
*
|
2006-11-17 |
2011-07-05 |
Nikon Corporation |
Stage apparatus and exposure apparatus
|
US8045135B2
(en)
*
|
2006-11-22 |
2011-10-25 |
Asml Netherlands B.V. |
Lithographic apparatus with a fluid combining unit and related device manufacturing method
|
US8040490B2
(en)
*
|
2006-12-01 |
2011-10-18 |
Nikon Corporation |
Liquid immersion exposure apparatus, exposure method, and method for producing device
|
US8013975B2
(en)
*
|
2006-12-01 |
2011-09-06 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
US20080156356A1
(en)
*
|
2006-12-05 |
2008-07-03 |
Nikon Corporation |
Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
|
US8634053B2
(en)
|
2006-12-07 |
2014-01-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US9632425B2
(en)
*
|
2006-12-07 |
2017-04-25 |
Asml Holding N.V. |
Lithographic apparatus, a dryer and a method of removing liquid from a surface
|
US20080137055A1
(en)
*
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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*
|
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|
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|
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|
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|
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|
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*
|
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|
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*
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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*
|
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|
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*
|
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|
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|
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|
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|
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|
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|
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