DE69324024D1 - Ohmsche kontaktstruktur zwischen platin und siliziumkarbid - Google Patents
Ohmsche kontaktstruktur zwischen platin und siliziumkarbidInfo
- Publication number
- DE69324024D1 DE69324024D1 DE69324024T DE69324024T DE69324024D1 DE 69324024 D1 DE69324024 D1 DE 69324024D1 DE 69324024 T DE69324024 T DE 69324024T DE 69324024 T DE69324024 T DE 69324024T DE 69324024 D1 DE69324024 D1 DE 69324024D1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- contact structure
- ohmic
- work function
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title 2
- 229910052697 platinum Inorganic materials 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/943,043 US5323022A (en) | 1992-09-10 | 1992-09-10 | Platinum ohmic contact to p-type silicon carbide |
| PCT/US1993/008516 WO1994006153A1 (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69324024D1 true DE69324024D1 (de) | 1999-04-22 |
| DE69324024T2 DE69324024T2 (de) | 1999-08-12 |
Family
ID=25479011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69324024T Expired - Lifetime DE69324024T2 (de) | 1992-09-10 | 1993-09-10 | Ohmsche kontaktstruktur zwischen platin und siliziumkarbid |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5323022A (de) |
| EP (1) | EP0659298B1 (de) |
| JP (1) | JP3012331B2 (de) |
| AT (1) | ATE177878T1 (de) |
| AU (1) | AU4854693A (de) |
| DE (1) | DE69324024T2 (de) |
| WO (1) | WO1994006153A1 (de) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
| US6953703B2 (en) * | 1991-03-18 | 2005-10-11 | The Trustees Of Boston University | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
| US5488232A (en) * | 1993-09-28 | 1996-01-30 | North Carolina State University | Oriented diamond film structures on non-diamond substrates |
| US5393687A (en) * | 1993-12-16 | 1995-02-28 | Taiwan Semiconductor Manufacturing Company | Method of making buried contact module with multiple poly si layers |
| DE4406769C2 (de) * | 1994-03-02 | 1997-10-16 | Daimler Benz Ag | Verfahren zur Herstellung ohmscher Kontakte auf einem SiC-Halbleiterkörper |
| JP3085078B2 (ja) * | 1994-03-04 | 2000-09-04 | 富士電機株式会社 | 炭化けい素電子デバイスの製造方法 |
| US5442200A (en) * | 1994-06-03 | 1995-08-15 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silcon carbide, and method of making the same |
| SE503265C2 (sv) * | 1994-09-23 | 1996-04-29 | Forskarpatent Ab | Förfarande och anordning för gasdetektion |
| SE504916C2 (sv) * | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
| US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
| US5677538A (en) * | 1995-07-07 | 1997-10-14 | Trustees Of Boston University | Photodetectors using III-V nitrides |
| US5574295A (en) * | 1995-08-09 | 1996-11-12 | Kulite Semiconductor Products | Dielectrically isolated SiC mosfet |
| SE9603608D0 (sv) * | 1996-10-03 | 1996-10-03 | Abb Research Ltd | A method for producing a region doped with boron in a SiC-layer |
| AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US6229193B1 (en) * | 1998-04-06 | 2001-05-08 | California Institute Of Technology | Multiple stage high power diode |
| DE19924982A1 (de) | 1998-06-08 | 1999-12-09 | Siemens Ag | Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung |
| US6803243B2 (en) | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| JP4785249B2 (ja) * | 1998-09-16 | 2011-10-05 | クリー インコーポレイテッド | 縦型デバイスのための裏面オーミックコンタクトの低温形成 |
| US6884644B1 (en) | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| DE19939107A1 (de) | 1998-09-23 | 2000-03-30 | Siemens Ag | Verfahren zum Herstellen eines ohmschen Kontakts |
| SE523918C2 (sv) | 1999-01-25 | 2004-06-01 | Appliedsensor Sweden Ab | Förfarande för framställning av integrerade sensorgrupper på ett gemensamt substrat samt en mask för användning vid förfarandet |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| US6204160B1 (en) | 1999-02-22 | 2001-03-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electrical contacts and junctions in silicon carbide |
| EP1168539B1 (de) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
| US6221087B1 (en) | 1999-10-01 | 2001-04-24 | Scimed Life Systems, Inc. | Ablation assembly with safety stop |
| US6599644B1 (en) | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| US6909119B2 (en) * | 2001-03-15 | 2005-06-21 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| US7132701B1 (en) | 2001-07-27 | 2006-11-07 | Fairchild Semiconductor Corporation | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
| JP4026339B2 (ja) * | 2001-09-06 | 2007-12-26 | 豊田合成株式会社 | ＳｉＣ用電極及びその製造方法 |
| US6903446B2 (en) * | 2001-10-23 | 2005-06-07 | Cree, Inc. | Pattern for improved visual inspection of semiconductor devices |
| US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
| US6815304B2 (en) | 2002-02-22 | 2004-11-09 | Semisouth Laboratories, Llc | Silicon carbide bipolar junction transistor with overgrown base region |
| US6881983B2 (en) * | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| US6911079B2 (en) * | 2002-04-19 | 2005-06-28 | Kopin Corporation | Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
| US7002180B2 (en) * | 2002-06-28 | 2006-02-21 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting device |
| WO2003107444A2 (en) | 2002-06-17 | 2003-12-24 | Kopin Corporation | Light-emitting diode device geometry |
| US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
| US6996009B2 (en) | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
| US6804136B2 (en) | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
| US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
| US7193893B2 (en) * | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US6955985B2 (en) | 2002-06-28 | 2005-10-18 | Kopin Corporation | Domain epitaxy for thin film growth |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
| US7221586B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
| US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
| US6815323B1 (en) | 2003-01-10 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on n-type silicon carbide using carbon films |
| US7122841B2 (en) | 2003-06-04 | 2006-10-17 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting devices |
| US7744604B2 (en) * | 2003-11-13 | 2010-06-29 | Lawrence Livermore National Security, Llc | Shape memory polymer medical device |
| US20050179042A1 (en) * | 2004-02-13 | 2005-08-18 | Kopin Corporation | Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices |
| US20050179046A1 (en) * | 2004-02-13 | 2005-08-18 | Kopin Corporation | P-type electrodes in gallium nitride-based light-emitting devices |
| US20050215041A1 (en) * | 2004-03-23 | 2005-09-29 | Seng William F | Low temperature, long term annealing of nickel contacts to lower interfacial resistance |
| US20060006393A1 (en) * | 2004-07-06 | 2006-01-12 | Ward Allan Iii | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
| US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| US8367510B2 (en) * | 2005-09-14 | 2013-02-05 | Central Research Institute Of Electric Power Industry | Process for producing silicon carbide semiconductor device |
| US7345310B2 (en) * | 2005-12-22 | 2008-03-18 | Cree, Inc. | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| GB0819001D0 (en) * | 2008-10-16 | 2008-11-26 | Diamond Detectors Ltd | Contacts on diamond |
| JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
| US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
| JP5728954B2 (ja) * | 2011-01-13 | 2015-06-03 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6323252B2 (ja) * | 2014-08-20 | 2018-05-16 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| US10716915B2 (en) | 2015-11-23 | 2020-07-21 | Mivi Neuroscience, Inc. | Catheter systems for applying effective suction in remote vessels and thrombectomy procedures facilitated by catheter systems |
| EP3859767B1 (de) * | 2020-02-03 | 2022-06-15 | Hitachi Energy Switzerland AG | Verfahren zur herstellung eines ohmschen kontakts zu siliciumcarbid des typs p |
| US11688785B2 (en) | 2020-03-26 | 2023-06-27 | Globalfoundries Singapore Pte. Ltd. | Metal semiconductor contacts |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3714520A (en) * | 1970-12-15 | 1973-01-30 | Gen Electric | High temperature low ohmic contact to silicon |
| US4263605A (en) * | 1979-01-04 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices |
| US4801984A (en) * | 1980-06-12 | 1989-01-31 | International Business Machines Corporation | Semiconductor ohmic contact |
| US4513309A (en) * | 1982-11-03 | 1985-04-23 | Westinghouse Electric Corp. | Prevention of latch-up in CMOS integrated circuits using Schottky diodes |
| US4583110A (en) * | 1984-06-14 | 1986-04-15 | International Business Machines Corporation | Intermetallic semiconductor ohmic contact |
| US4772934A (en) * | 1986-06-06 | 1988-09-20 | American Telephone And Telegraph Company, At&T Bell Laboratories | Delta-doped ohmic metal to semiconductor contacts |
| US5098859A (en) * | 1986-06-19 | 1992-03-24 | International Business Machines Corporation | Method for forming distributed barrier compound semiconductor contacts |
| US4907040A (en) * | 1986-09-17 | 1990-03-06 | Konishiroku Photo Industry Co., Ltd. | Thin film Schottky barrier device |
| US5087576A (en) * | 1987-10-26 | 1992-02-11 | North Carolina State University | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
| JPH0258874A (ja) * | 1988-08-24 | 1990-02-28 | Nec Corp | 半導体集積回路装置 |
| US5006914A (en) * | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
| US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| JPH02196421A (ja) * | 1989-01-25 | 1990-08-03 | Sanyo Electric Co Ltd | 炭化ケイ素半導体素子の電極形成方法 |
| US5210431A (en) * | 1989-07-06 | 1993-05-11 | Sumitomo Electric Industries, Ltd. | Ohmic connection electrodes for p-type semiconductor diamonds |
| US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US5274269A (en) * | 1991-05-15 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Ohmic contact for p-type group II-IV compound semiconductors |
| US5818072A (en) * | 1992-05-12 | 1998-10-06 | North Carolina State University | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
-
1992
- 1992-09-10 US US07/943,043 patent/US5323022A/en not_active Expired - Lifetime
-
1993
- 1993-09-10 EP EP93921460A patent/EP0659298B1/de not_active Expired - Lifetime
- 1993-09-10 DE DE69324024T patent/DE69324024T2/de not_active Expired - Lifetime
- 1993-09-10 AU AU48546/93A patent/AU4854693A/en not_active Abandoned
- 1993-09-10 WO PCT/US1993/008516 patent/WO1994006153A1/en active IP Right Grant
- 1993-09-10 JP JP6507541A patent/JP3012331B2/ja not_active Expired - Lifetime
- 1993-09-10 AT AT93921460T patent/ATE177878T1/de active
-
1994
- 1994-04-22 US US08/231,389 patent/US5409859A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1994006153A1 (en) | 1994-03-17 |
| AU4854693A (en) | 1994-03-29 |
| US5409859A (en) | 1995-04-25 |
| DE69324024T2 (de) | 1999-08-12 |
| JPH08504298A (ja) | 1996-05-07 |
| ATE177878T1 (de) | 1999-04-15 |
| EP0659298A1 (de) | 1995-06-28 |
| JP3012331B2 (ja) | 2000-02-21 |
| US5323022A (en) | 1994-06-21 |
| EP0659298B1 (de) | 1999-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |