DE69325001D1 - Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren - Google Patents

Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren

Info

Publication number
DE69325001D1
DE69325001D1 DE69325001T DE69325001T DE69325001D1 DE 69325001 D1 DE69325001 D1 DE 69325001D1 DE 69325001 T DE69325001 T DE 69325001T DE 69325001 T DE69325001 T DE 69325001T DE 69325001 D1 DE69325001 D1 DE 69325001D1
Authority
DE
Germany
Prior art keywords
manufacturing
memory device
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325001T
Other languages
English (en)
Other versions
DE69325001T2 (de
Inventor
Tadashi Kawamura
Naofumi Kimura
Yoshitaka Yamamoto
Yutaka Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31741592A external-priority patent/JP2823757B2/ja
Priority claimed from JP6439393A external-priority patent/JP3201863B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69325001D1 publication Critical patent/DE69325001D1/de
Application granted granted Critical
Publication of DE69325001T2 publication Critical patent/DE69325001T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
DE69325001T 1992-11-26 1993-11-26 Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren Expired - Fee Related DE69325001T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31741592A JP2823757B2 (ja) 1992-11-26 1992-11-26 不揮発性記録装置
JP6439393A JP3201863B2 (ja) 1993-03-23 1993-03-23 不揮発性記録装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69325001D1 true DE69325001D1 (de) 1999-06-24
DE69325001T2 DE69325001T2 (de) 1999-10-28

Family

ID=26405506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325001T Expired - Fee Related DE69325001T2 (de) 1992-11-26 1993-11-26 Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5579199A (de)
EP (1) EP0599656B1 (de)
DE (1) DE69325001T2 (de)

Families Citing this family (38)

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JP2743851B2 (ja) * 1995-01-05 1998-04-22 日本電気株式会社 磁気ヘッド
TW513804B (en) * 2000-05-01 2002-12-11 Koninkl Philips Electronics Nv One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory
US6433310B1 (en) * 2001-01-31 2002-08-13 International Business Machines Corporation Assembly suitable for reading/writing/erasing information on a media based on thermal coupling
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
KR100895901B1 (ko) * 2001-05-07 2009-05-04 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 효과를 갖는 스위치 요소
DE60220912T2 (de) * 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben
AU2002340795A1 (en) * 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
CN1276518C (zh) 2001-05-07 2006-09-20 先进微装置公司 使用复合分子材料的浮置栅极存储装置
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
WO2003017282A1 (fr) * 2001-08-13 2003-02-27 Advanced Micro Devices, Inc. Cellule de memoire
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US7190620B2 (en) 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7366025B2 (en) 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
EP1717862A3 (de) * 2005-04-28 2012-10-10 Semiconductor Energy Laboratory Co., Ltd. Speicherelement und Halbleiterbauelement
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US20080134961A1 (en) * 2006-11-03 2008-06-12 Zhenan Bao Single-crystal organic semiconductor materials and approaches therefor

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US3350691A (en) * 1964-05-06 1967-10-31 Burroughs Corp Alterable read-only storage device
US3836243A (en) * 1972-06-27 1974-09-17 Bell Telephone Labor Inc Liquid crystal display apparatus
US4435047A (en) * 1981-09-16 1984-03-06 Manchester R & D Partnership Encapsulated liquid crystal and method
JPS59155880A (ja) * 1983-02-25 1984-09-05 株式会社日立製作所 情報保持装置
US4662720A (en) * 1983-03-30 1987-05-05 Manchester R & D Partnership Colored encapsulated liquid crystal devices using imbibition of colored dyes and scanned multicolor displays
AU580251B2 (en) * 1983-03-30 1989-01-12 Bell, James Roeder III Colored encapsulated liquid crystal apparatus using enhanced scattering, imbibition method, and scanned multicolor displays
US4596445A (en) * 1983-03-30 1986-06-24 Manchester R & D Partnership Colored encapsulated liquid crystal apparatus using enhanced scattering
JPS59216177A (ja) * 1983-05-25 1984-12-06 株式会社日立製作所 情報保持装置
DE3588046T2 (de) * 1984-03-19 1996-01-11 Univ Kent State Ohio Lichtmodulierendes Material, das in einer Kunstharzmatrix dispergierte Flüssigkristalle umfasst.
JPS62212620A (ja) * 1986-03-14 1987-09-18 Canon Inc 表示装置
US4775226A (en) * 1986-06-30 1988-10-04 General Motors Corporation Method to create memory in a dispersed smectic system
JPH0346621A (ja) * 1989-07-14 1991-02-27 Toray Ind Inc 液晶装置
US5031144A (en) * 1990-02-28 1991-07-09 Hughes Aircraft Company Ferroelectric memory with non-destructive readout including grid electrode between top and bottom electrodes
EP0540153B1 (de) * 1991-10-30 1999-06-09 Sharp Kabushiki Kaisha Nichtflüchtige Speicheranordnung

Also Published As

Publication number Publication date
EP0599656B1 (de) 1999-05-19
EP0599656A3 (de) 1994-10-26
EP0599656A2 (de) 1994-06-01
US5579199A (en) 1996-11-26
DE69325001T2 (de) 1999-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee