DE69325001D1 - Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren - Google Patents
Nicht flüchtige Speicheranordnung und ihr HerstellungsverfahrenInfo
- Publication number
- DE69325001D1 DE69325001D1 DE69325001T DE69325001T DE69325001D1 DE 69325001 D1 DE69325001 D1 DE 69325001D1 DE 69325001 T DE69325001 T DE 69325001T DE 69325001 T DE69325001 T DE 69325001T DE 69325001 D1 DE69325001 D1 DE 69325001D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- memory device
- volatile memory
- volatile
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31741592A JP2823757B2 (ja) | 1992-11-26 | 1992-11-26 | 不揮発性記録装置 |
JP6439393A JP3201863B2 (ja) | 1993-03-23 | 1993-03-23 | 不揮発性記録装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325001D1 true DE69325001D1 (de) | 1999-06-24 |
DE69325001T2 DE69325001T2 (de) | 1999-10-28 |
Family
ID=26405506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325001T Expired - Fee Related DE69325001T2 (de) | 1992-11-26 | 1993-11-26 | Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (1) | US5579199A (de) |
EP (1) | EP0599656B1 (de) |
DE (1) | DE69325001T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2743851B2 (ja) * | 1995-01-05 | 1998-04-22 | 日本電気株式会社 | 磁気ヘッド |
TW513804B (en) * | 2000-05-01 | 2002-12-11 | Koninkl Philips Electronics Nv | One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory |
US6433310B1 (en) * | 2001-01-31 | 2002-08-13 | International Business Machines Corporation | Assembly suitable for reading/writing/erasing information on a media based on thermal coupling |
US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
KR100895901B1 (ko) * | 2001-05-07 | 2009-05-04 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 메모리 효과를 갖는 스위치 요소 |
DE60220912T2 (de) * | 2001-05-07 | 2008-02-28 | Advanced Micro Devices, Inc., Sunnyvale | Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben |
AU2002340795A1 (en) * | 2001-05-07 | 2002-11-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
AU2002340793A1 (en) * | 2001-05-07 | 2002-11-18 | Coatue Corporation | Molecular memory device |
US6873540B2 (en) * | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
CN1276518C (zh) | 2001-05-07 | 2006-09-20 | 先进微装置公司 | 使用复合分子材料的浮置栅极存储装置 |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
WO2003017282A1 (fr) * | 2001-08-13 | 2003-02-27 | Advanced Micro Devices, Inc. | Cellule de memoire |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US7190620B2 (en) | 2002-01-31 | 2007-03-13 | Saifun Semiconductors Ltd. | Method for operating a memory device |
US6975536B2 (en) * | 2002-01-31 | 2005-12-13 | Saifun Semiconductors Ltd. | Mass storage array and methods for operation thereof |
KR100433407B1 (ko) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | 업라이트형 진공청소기 |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
WO2005094178A2 (en) | 2004-04-01 | 2005-10-13 | Saifun Semiconductors Ltd. | Method, circuit and systems for erasing one or more non-volatile memory cells |
US7366025B2 (en) | 2004-06-10 | 2008-04-29 | Saifun Semiconductors Ltd. | Reduced power programming of non-volatile cells |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
EP1717862A3 (de) * | 2005-04-28 | 2012-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Speicherelement und Halbleiterbauelement |
US8400841B2 (en) | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
US7184313B2 (en) | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) * | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US20080134961A1 (en) * | 2006-11-03 | 2008-06-12 | Zhenan Bao | Single-crystal organic semiconductor materials and approaches therefor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3350691A (en) * | 1964-05-06 | 1967-10-31 | Burroughs Corp | Alterable read-only storage device |
US3836243A (en) * | 1972-06-27 | 1974-09-17 | Bell Telephone Labor Inc | Liquid crystal display apparatus |
US4435047A (en) * | 1981-09-16 | 1984-03-06 | Manchester R & D Partnership | Encapsulated liquid crystal and method |
JPS59155880A (ja) * | 1983-02-25 | 1984-09-05 | 株式会社日立製作所 | 情報保持装置 |
US4662720A (en) * | 1983-03-30 | 1987-05-05 | Manchester R & D Partnership | Colored encapsulated liquid crystal devices using imbibition of colored dyes and scanned multicolor displays |
AU580251B2 (en) * | 1983-03-30 | 1989-01-12 | Bell, James Roeder III | Colored encapsulated liquid crystal apparatus using enhanced scattering, imbibition method, and scanned multicolor displays |
US4596445A (en) * | 1983-03-30 | 1986-06-24 | Manchester R & D Partnership | Colored encapsulated liquid crystal apparatus using enhanced scattering |
JPS59216177A (ja) * | 1983-05-25 | 1984-12-06 | 株式会社日立製作所 | 情報保持装置 |
DE3588046T2 (de) * | 1984-03-19 | 1996-01-11 | Univ Kent State Ohio | Lichtmodulierendes Material, das in einer Kunstharzmatrix dispergierte Flüssigkristalle umfasst. |
JPS62212620A (ja) * | 1986-03-14 | 1987-09-18 | Canon Inc | 表示装置 |
US4775226A (en) * | 1986-06-30 | 1988-10-04 | General Motors Corporation | Method to create memory in a dispersed smectic system |
JPH0346621A (ja) * | 1989-07-14 | 1991-02-27 | Toray Ind Inc | 液晶装置 |
US5031144A (en) * | 1990-02-28 | 1991-07-09 | Hughes Aircraft Company | Ferroelectric memory with non-destructive readout including grid electrode between top and bottom electrodes |
EP0540153B1 (de) * | 1991-10-30 | 1999-06-09 | Sharp Kabushiki Kaisha | Nichtflüchtige Speicheranordnung |
-
1993
- 1993-11-24 US US08/158,258 patent/US5579199A/en not_active Expired - Fee Related
- 1993-11-26 EP EP93309443A patent/EP0599656B1/de not_active Expired - Lifetime
- 1993-11-26 DE DE69325001T patent/DE69325001T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0599656B1 (de) | 1999-05-19 |
EP0599656A3 (de) | 1994-10-26 |
EP0599656A2 (de) | 1994-06-01 |
US5579199A (en) | 1996-11-26 |
DE69325001T2 (de) | 1999-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |