DE69326493D1 - Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung - Google Patents

Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung

Info

Publication number
DE69326493D1
DE69326493D1 DE69326493T DE69326493T DE69326493D1 DE 69326493 D1 DE69326493 D1 DE 69326493D1 DE 69326493 T DE69326493 T DE 69326493T DE 69326493 T DE69326493 T DE 69326493T DE 69326493 D1 DE69326493 D1 DE 69326493D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
access method
synchronous semiconductor
synchronous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69326493T
Other languages
English (en)
Other versions
DE69326493T2 (de
Inventor
Haruki Toda
Yuji Watanabe
Hitoshi Kuyama
Shozo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69326493D1 publication Critical patent/DE69326493D1/de
Application granted granted Critical
Publication of DE69326493T2 publication Critical patent/DE69326493T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
DE69326493T 1992-03-19 1993-03-12 Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung Expired - Lifetime DE69326493T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6383592 1992-03-19
JP4341907A JP2740097B2 (ja) 1992-03-19 1992-12-22 クロック同期型半導体記憶装置およびそのアクセス方法

Publications (2)

Publication Number Publication Date
DE69326493D1 true DE69326493D1 (de) 1999-10-28
DE69326493T2 DE69326493T2 (de) 2000-02-03

Family

ID=26404955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326493T Expired - Lifetime DE69326493T2 (de) 1992-03-19 1993-03-12 Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung

Country Status (4)

Country Link
US (1) US5323358A (de)
EP (1) EP0561306B1 (de)
JP (1) JP2740097B2 (de)
DE (1) DE69326493T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770247B2 (ja) * 1988-03-11 1995-07-31 日本カーリット株式会社 耐熱性電荷移動錯体
JP2740063B2 (ja) * 1990-10-15 1998-04-15 株式会社東芝 半導体記憶装置
US6310821B1 (en) 1998-07-10 2001-10-30 Kabushiki Kaisha Toshiba Clock-synchronous semiconductor memory device and access method thereof
EP0561370B1 (de) * 1992-03-19 1999-06-02 Kabushiki Kaisha Toshiba Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren
US5592436A (en) * 1992-08-28 1997-01-07 Kabushiki Kaisha Toshiba Data transfer system
JPH0784870A (ja) * 1993-06-30 1995-03-31 Sanyo Electric Co Ltd 記憶回路
US5452259A (en) * 1993-11-15 1995-09-19 Micron Technology Inc. Multiport memory with pipelined serial input
US5402389A (en) * 1994-03-08 1995-03-28 Motorola, Inc. Synchronous memory having parallel output data paths
KR0123850B1 (ko) * 1994-04-15 1997-11-25 문정환 디지탈 영상 메모리
JPH0869409A (ja) * 1994-08-29 1996-03-12 Nec Corp 半導体メモリのデータ読み出し方法
US5600605A (en) * 1995-06-07 1997-02-04 Micron Technology, Inc. Auto-activate on synchronous dynamic random access memory
US6810449B1 (en) 1995-10-19 2004-10-26 Rambus, Inc. Protocol for communication with dynamic memory
US6470405B2 (en) 1995-10-19 2002-10-22 Rambus Inc. Protocol for communication with dynamic memory
US6035369A (en) 1995-10-19 2000-03-07 Rambus Inc. Method and apparatus for providing a memory with write enable information
US6209071B1 (en) * 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JP3523004B2 (ja) * 1997-03-19 2004-04-26 株式会社東芝 同期式ランダムアクセスメモリ
TW378330B (en) 1997-06-03 2000-01-01 Fujitsu Ltd Semiconductor memory device
US6266379B1 (en) 1997-06-20 2001-07-24 Massachusetts Institute Of Technology Digital transmitter with equalization
US6343352B1 (en) 1997-10-10 2002-01-29 Rambus Inc. Method and apparatus for two step memory write operations
AU9693398A (en) * 1997-10-10 1999-05-03 Rambus Incorporated Apparatus and method for pipelined memory operations
US6401167B1 (en) * 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
US6295231B1 (en) * 1998-07-17 2001-09-25 Kabushiki Kaisha Toshiba High-speed cycle clock-synchronous memory device
JP2000137983A (ja) 1998-08-26 2000-05-16 Toshiba Corp 半導体記憶装置
JP4083944B2 (ja) 1999-12-13 2008-04-30 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US6675272B2 (en) * 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
US8391039B2 (en) 2001-04-24 2013-03-05 Rambus Inc. Memory module with termination component
US7301831B2 (en) 2004-09-15 2007-11-27 Rambus Inc. Memory systems with variable delays for write data signals

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2095442A (en) * 1981-03-25 1982-09-29 Philips Electronic Associated Refreshing dynamic MOS memories
US4891794A (en) * 1988-06-20 1990-01-02 Micron Technology, Inc. Three port random access memory
US5200925A (en) * 1988-07-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Serial access semiconductor memory device and operating method therefor
JPH0283891A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体メモリ
JPH0294194A (ja) * 1988-09-30 1990-04-04 Nec Corp インターリーブバッファ
KR100214435B1 (ko) * 1990-07-25 1999-08-02 사와무라 시코 동기식 버스트 엑세스 메모리

Also Published As

Publication number Publication date
US5323358A (en) 1994-06-21
EP0561306A3 (de) 1994-12-14
JP2740097B2 (ja) 1998-04-15
DE69326493T2 (de) 2000-02-03
JPH0684351A (ja) 1994-03-25
EP0561306B1 (de) 1999-09-22
EP0561306A2 (de) 1993-09-22

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Legal Events

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