DE69330335T2 - Festwertspeicherschaltung mit virtueller Erdung - Google Patents

Festwertspeicherschaltung mit virtueller Erdung

Info

Publication number
DE69330335T2
DE69330335T2 DE69330335T DE69330335T DE69330335T2 DE 69330335 T2 DE69330335 T2 DE 69330335T2 DE 69330335 T DE69330335 T DE 69330335T DE 69330335 T DE69330335 T DE 69330335T DE 69330335 T2 DE69330335 T2 DE 69330335T2
Authority
DE
Germany
Prior art keywords
read
memory circuit
virtual grounding
grounding
virtual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330335T
Other languages
English (en)
Other versions
DE69330335D1 (de
Inventor
Elmer Henry Guritz
Tsiu Chiu Chan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69330335D1 publication Critical patent/DE69330335D1/de
Publication of DE69330335T2 publication Critical patent/DE69330335T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
DE69330335T 1992-11-30 1993-11-29 Festwertspeicherschaltung mit virtueller Erdung Expired - Fee Related DE69330335T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/982,988 US5377153A (en) 1992-11-30 1992-11-30 Virtual ground read only memory circuit

Publications (2)

Publication Number Publication Date
DE69330335D1 DE69330335D1 (de) 2001-07-19
DE69330335T2 true DE69330335T2 (de) 2002-05-29

Family

ID=25529714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330335T Expired - Fee Related DE69330335T2 (de) 1992-11-30 1993-11-29 Festwertspeicherschaltung mit virtueller Erdung

Country Status (4)

Country Link
US (3) US5377153A (de)
EP (1) EP0600692B1 (de)
JP (1) JPH06215594A (de)
DE (1) DE69330335T2 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5377153A (en) * 1992-11-30 1994-12-27 Sgs-Thomson Microelectronics, Inc. Virtual ground read only memory circuit
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6002858A (en) * 1997-09-25 1999-12-14 Vlsi Technology, Inc. Cycle time optimization for self-timed read only memory compilers
JP3011152B2 (ja) * 1997-10-01 2000-02-21 日本電気株式会社 半導体記憶装置の製造方法および半導体記憶装置
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
US6633499B1 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Method for reducing voltage drops in symmetric array architectures
US6633496B2 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Symmetric architecture for memory cells having widely spread metal bit lines
US6430077B1 (en) 1997-12-12 2002-08-06 Saifun Semiconductors Ltd. Method for regulating read voltage level at the drain of a cell in a symmetric array
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6175519B1 (en) * 1999-07-22 2001-01-16 Macronix International Co., Ltd. Virtual ground EPROM structure
US6181604B1 (en) * 1999-07-22 2001-01-30 Macronix International Co., Ltd. Method for fast programming of EPROMS and multi-level flash EPROMS
JP2001143483A (ja) * 1999-11-16 2001-05-25 Nec Corp 半導体記憶装置
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6396741B1 (en) * 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6614692B2 (en) 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6636440B2 (en) 2001-04-25 2003-10-21 Saifun Semiconductors Ltd. Method for operation of an EEPROM array, including refresh thereof
KR100416599B1 (ko) 2001-05-31 2004-02-05 삼성전자주식회사 집적도와 독출동작 속도를 향상시키고 전력소모를감소시킬 수 있는 메탈 프로그래머블 롬의 메모리셀 구조
US6480422B1 (en) 2001-06-14 2002-11-12 Multi Level Memory Technology Contactless flash memory with shared buried diffusion bit line architecture
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US7221591B1 (en) * 2002-05-06 2007-05-22 Samsung Electronics Co., Ltd. Fabricating bi-directional nonvolatile memory cells
US6914820B1 (en) 2002-05-06 2005-07-05 Multi Level Memory Technology Erasing storage nodes in a bi-directional nonvolatile memory cell
US6747896B2 (en) 2002-05-06 2004-06-08 Multi Level Memory Technology Bi-directional floating gate nonvolatile memory
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7652930B2 (en) * 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US20060036803A1 (en) * 2004-08-16 2006-02-16 Mori Edan Non-volatile memory device controlled by a micro-controller
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) * 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) * 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US20070036007A1 (en) * 2005-08-09 2007-02-15 Saifun Semiconductors, Ltd. Sticky bit buffer
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7551465B2 (en) * 2007-04-27 2009-06-23 Tecla Ghilardi Reference cell layout with enhanced RTN immunity
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
KR101536562B1 (ko) * 2009-02-09 2015-07-14 삼성전자 주식회사 반도체 집적 회로 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586718T2 (de) * 1984-12-26 1993-03-11 Sgs Thomson Microelectronics Festwertspeicher mit interdigitalen bitzeilen.
US4651305A (en) * 1985-02-11 1987-03-17 Thomson Components-Mostek Corporation Sense amplifier bit line isolation scheme
US4980861A (en) * 1987-01-16 1990-12-25 Microchip Technology Incorporated NAND stack ROM
JP2617189B2 (ja) * 1987-08-03 1997-06-04 沖電気工業株式会社 電流検出回路
JP2565213B2 (ja) * 1989-10-27 1996-12-18 ソニー株式会社 読み出し専用メモリ装置
US5111428A (en) * 1990-07-10 1992-05-05 Silicon Integrated Systems Corp. High density NOR type read only memory data cell and reference cell network
US5377153A (en) * 1992-11-30 1994-12-27 Sgs-Thomson Microelectronics, Inc. Virtual ground read only memory circuit

Also Published As

Publication number Publication date
US5623438A (en) 1997-04-22
JPH06215594A (ja) 1994-08-05
EP0600692A2 (de) 1994-06-08
EP0600692B1 (de) 2001-06-13
US5377153A (en) 1994-12-27
US5734602A (en) 1998-03-31
EP0600692A3 (de) 1995-04-19
DE69330335D1 (de) 2001-07-19

Similar Documents

Publication Publication Date Title
DE69330335D1 (de) Festwertspeicherschaltung mit virtueller Erdung
DE69212725T2 (de) Verbinder mit Erdungsanordnung
DE69208653T2 (de) Verbinder mit Ringverriegelung
DE69317350D1 (de) Vergleichsschaltung
DE69404726T2 (de) Schnittstellenschaltung
DE69327564D1 (de) Elektrisch leitfähige Zusammensetzung
DE69317944T2 (de) Integrierte Speicherschaltung
DE59304283D1 (de) Schaltungsanordnung
DE69129739D1 (de) Speicherschaltung
DE68926541T2 (de) Adressenmodifizierungsschaltung
DE69319361D1 (de) Logische Schaltung
DE69316944T2 (de) Datenschutzschaltung
DE9316832U1 (de) Leiterverbindung
KR950701160A (ko) 결합회로
DE69314379T2 (de) Steuerschaltung
DE69423694D1 (de) Volladdiererschaltung
DE69318777D1 (de) Kontraststeuerschaltung
DE59302341D1 (de) Leiterbahnen-Verbindung
KR900013271U (ko) 메모리 보호회로
DE59303835D1 (de) Schaltungsanordnung
DE9209570U1 (de) Schaltungsanordnung
DK53193D0 (da) Gennemvalgskredsloeb
KR930020499U (ko) 부트스트랩 회로
KR940014472U (ko) 보온밥통의 수분 보충회로
DE9309825U1 (de) Schaltungsanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee