DE69402147D1 - Halbleiterlaser mit Linse und dessen Herstellungsverfahren - Google Patents

Halbleiterlaser mit Linse und dessen Herstellungsverfahren

Info

Publication number
DE69402147D1
DE69402147D1 DE69402147T DE69402147T DE69402147D1 DE 69402147 D1 DE69402147 D1 DE 69402147D1 DE 69402147 T DE69402147 T DE 69402147T DE 69402147 T DE69402147 T DE 69402147T DE 69402147 D1 DE69402147 D1 DE 69402147D1
Authority
DE
Germany
Prior art keywords
lens
manufacturing process
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69402147T
Other languages
English (en)
Other versions
DE69402147T2 (de
Inventor
Akinori Seki
Toyokazu Ohnishi
Jiro Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Application granted granted Critical
Publication of DE69402147D1 publication Critical patent/DE69402147D1/de
Publication of DE69402147T2 publication Critical patent/DE69402147T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
DE69402147T 1993-10-19 1994-10-18 Halbleiterlaser mit Linse und dessen Herstellungsverfahren Expired - Fee Related DE69402147T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5261086A JPH07115244A (ja) 1993-10-19 1993-10-19 半導体レーザー及びその製造方法

Publications (2)

Publication Number Publication Date
DE69402147D1 true DE69402147D1 (de) 1997-04-24
DE69402147T2 DE69402147T2 (de) 1997-08-28

Family

ID=17356893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402147T Expired - Fee Related DE69402147T2 (de) 1993-10-19 1994-10-18 Halbleiterlaser mit Linse und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5553089A (de)
EP (1) EP0649203B1 (de)
JP (1) JPH07115244A (de)
DE (1) DE69402147T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995035582A2 (en) * 1994-06-20 1995-12-28 Philips Electronics N.V. Radiation-emitting semiconductor index-guided diode
JP2882462B2 (ja) * 1995-09-13 1999-04-12 日本電気株式会社 半導体装置の端面形成方法
WO1997033352A1 (fr) * 1996-03-08 1997-09-12 Nippon Aspherical Lens Co., Ltd. Lentille, element laser a semi-conducteur, dispositif d'usinage de la lentille et de l'element, procede de fabrication de l'element laser a semi-conducteur, element optique et dispositif et procede d'usinage dudit element optique
US5966393A (en) * 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
KR100298829B1 (ko) 1999-07-21 2001-11-01 윤종용 칩 사이즈 패키지의 솔더 접합 구조 및 방법
TW446572B (en) * 1999-09-10 2001-07-21 Min Shr Device and method for treating organic exhaust by combining ultraviolet oxidation method with bio-decomposition method
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2001284725A (ja) * 2000-03-31 2001-10-12 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
DE10042904C2 (de) * 2000-08-31 2003-03-13 Infineon Technologies Ag Halbleiterlaserchip mit integriertem Strahlformer und Verfahren zum Herstellen eines Halbleiterlaserchips mit integriertem Strahlformer
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
JP2002232061A (ja) * 2001-02-01 2002-08-16 Mitsubishi Electric Corp 半導体レーザ装置の製造方法および半導体レーザ装置
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
EP1520203A4 (de) * 2002-06-18 2005-08-24 Nanoopto Corp Optische komponente mit erweiterter funktionalität und verfahren zu ihrer herstellung
US7009213B2 (en) 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
US7329982B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company LED package with non-bonded optical element
US20060091411A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package
US20060091414A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J LED package with front surface heat extractor
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US20070258241A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with non-bonded converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
US7525126B2 (en) 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US7953293B2 (en) * 2006-05-02 2011-05-31 Ati Technologies Ulc Field sequence detector, method and video device
US7390117B2 (en) * 2006-05-02 2008-06-24 3M Innovative Properties Company LED package with compound converging optical element
WO2008011377A2 (en) * 2006-07-17 2008-01-24 3M Innovative Properties Company Led package with converging extractor
US7737636B2 (en) * 2006-11-09 2010-06-15 Intematix Corporation LED assembly with an LED and adjacent lens and method of making same
TW200835100A (en) * 2007-02-13 2008-08-16 Aurotek Corp Laser diode
JP4656183B2 (ja) 2008-05-14 2011-03-23 ソニー株式会社 半導体発光素子
DE102017123798B4 (de) * 2017-10-12 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und Herstellungsverfahren für optoelektronische Halbleiterbauteile

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2046005B (en) * 1979-03-29 1983-02-09 Standard Telephones Cables Ltd Injection laser devices
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
JPS63100790A (ja) * 1986-10-17 1988-05-02 Nec Corp 半導体レ−ザモジユ−ル
US4927870A (en) * 1988-08-25 1990-05-22 The Dow Chemical Company Ignition resistant modified thermoplastic composition
US5081639A (en) * 1990-10-01 1992-01-14 The United States Of America As Represented By The United States Department Of Energy Laser diode assembly including a cylindrical lens
US5086431A (en) * 1990-12-21 1992-02-04 Santa Barbara Research Center Increased intensity laser diode source configuration
US5206878A (en) * 1991-10-11 1993-04-27 At&T Bell Laboratories Wide strip diode laser employing a lens
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams

Also Published As

Publication number Publication date
EP0649203B1 (de) 1997-03-19
DE69402147T2 (de) 1997-08-28
JPH07115244A (ja) 1995-05-02
EP0649203A1 (de) 1995-04-19
US5553089A (en) 1996-09-03

Similar Documents

Publication Publication Date Title
DE69402147D1 (de) Halbleiterlaser mit Linse und dessen Herstellungsverfahren
DE69400042D1 (de) Oberflächenemittierender Laser und dessen Herstellungsverfahren
DE69321430D1 (de) Optischer Wellenleiter und dessen Herstellungsverfahren
DE69517614D1 (de) Halbleiterdiodenlaser und dessen Herstellungsverfahren
DE69414208T2 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69426208T2 (de) Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69635410D1 (de) Halbleiterlaser und dessen herstellungsverfahren
DE69431318D1 (de) Optische Verrichtungen, integrierte optische Vorrichtungen und Herstellungsverfahren derselben
DE69601477D1 (de) Halbleiterlaserdiode und deren Herstellungsverfahren
DE69433337D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren
DE69224468T2 (de) Räumlicher Lichtmodulator und Herstellungsverfahren
DE69504262T2 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69524544D1 (de) Brillenglas und Herstellungsverfahren desselben
DE69401733T2 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69418844D1 (de) Modul mit optischer Vorrichtung und Herstellungsverfahren
DE69714815D1 (de) Halbleiterlaser mit Spiegelbeschichtung und dessen Herstellungsverfahren
DE69325234D1 (de) Toner und dessen Herstellungsverfahren
DE69319317T2 (de) Halbleiterlaser und Herstellungsverfahren
DE69400533T2 (de) Halbleiterlaser und Herstellungsverfahren
DE69400459T2 (de) Halbleiterlaser und Herstellungsverfahren
DE69626559D1 (de) Laserlichtquelle und Herstellungsverfahren
ATA95693A (de) Linse
DE69404432D1 (de) Laser mit Streifenstruktur und Herstellungsverfahren
DE69500392T2 (de) Halbleiterlasergerät und dessen Herstellungsverfahren
DE69411879T2 (de) Optischer Modulator und sein Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee