DE69407088T2 - Verfahren zum Polieren eines Substrats - Google Patents
Verfahren zum Polieren eines SubstratsInfo
- Publication number
- DE69407088T2 DE69407088T2 DE69407088T DE69407088T DE69407088T2 DE 69407088 T2 DE69407088 T2 DE 69407088T2 DE 69407088 T DE69407088 T DE 69407088T DE 69407088 T DE69407088 T DE 69407088T DE 69407088 T2 DE69407088 T2 DE 69407088T2
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/056,274 US5433650A (en) | 1993-05-03 | 1993-05-03 | Method for polishing a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69407088D1 DE69407088D1 (de) | 1998-01-15 |
DE69407088T2 true DE69407088T2 (de) | 1998-06-10 |
Family
ID=22003335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69407088T Expired - Fee Related DE69407088T2 (de) | 1993-05-03 | 1994-04-28 | Verfahren zum Polieren eines Substrats |
Country Status (6)
Country | Link |
---|---|
US (1) | US5433650A (de) |
EP (1) | EP0623423B1 (de) |
JP (1) | JPH06320417A (de) |
KR (1) | KR940027084A (de) |
DE (1) | DE69407088T2 (de) |
SG (1) | SG47674A1 (de) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5733171A (en) * | 1996-07-18 | 1998-03-31 | Speedfam Corporation | Apparatus for the in-process detection of workpieces in a CMP environment |
US5823853A (en) * | 1996-07-18 | 1998-10-20 | Speedfam Corporation | Apparatus for the in-process detection of workpieces with a monochromatic light source |
US5643060A (en) * | 1993-08-25 | 1997-07-01 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including heater |
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
US5643044A (en) * | 1994-11-01 | 1997-07-01 | Lund; Douglas E. | Automatic chemical and mechanical polishing system for semiconductor wafers |
US5695384A (en) * | 1994-12-07 | 1997-12-09 | Texas Instruments Incorporated | Chemical-mechanical polishing salt slurry |
JP3438383B2 (ja) * | 1995-03-03 | 2003-08-18 | ソニー株式会社 | 研磨方法およびこれに用いる研磨装置 |
US5649849A (en) * | 1995-03-24 | 1997-07-22 | Eastman Kodak Company | Method and apparatus for realtime monitoring and feedback control of the shape of a continuous planetary polishing surface |
TW400567B (en) * | 1995-04-10 | 2000-08-01 | Matsushita Electric Ind Co Ltd | The polishing device and its polishing method for the substrate |
US7169015B2 (en) * | 1995-05-23 | 2007-01-30 | Nova Measuring Instruments Ltd. | Apparatus for optical inspection of wafers during processing |
US20070123151A1 (en) * | 1995-05-23 | 2007-05-31 | Nova Measuring Instruments Ltd | Apparatus for optical inspection of wafers during polishing |
IL113829A (en) | 1995-05-23 | 2000-12-06 | Nova Measuring Instr Ltd | Apparatus for optical inspection of wafers during polishing |
US5722875A (en) * | 1995-05-30 | 1998-03-03 | Tokyo Electron Limited | Method and apparatus for polishing |
US5816891A (en) * | 1995-06-06 | 1998-10-06 | Advanced Micro Devices, Inc. | Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput |
US5895270A (en) * | 1995-06-26 | 1999-04-20 | Texas Instruments Incorporated | Chemical mechanical polishing method and apparatus |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
US5708506A (en) * | 1995-07-03 | 1998-01-13 | Applied Materials, Inc. | Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process |
JP3778594B2 (ja) * | 1995-07-18 | 2006-05-24 | 株式会社荏原製作所 | ドレッシング方法 |
US5709593A (en) * | 1995-10-27 | 1998-01-20 | Applied Materials, Inc. | Apparatus and method for distribution of slurry in a chemical mechanical polishing system |
US5685766A (en) * | 1995-11-30 | 1997-11-11 | Speedfam Corporation | Polishing control method |
US5695601A (en) * | 1995-12-27 | 1997-12-09 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5643048A (en) * | 1996-02-13 | 1997-07-01 | Micron Technology, Inc. | Endpoint regulator and method for regulating a change in wafer thickness in chemical-mechanical planarization of semiconductor wafers |
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US5679065A (en) * | 1996-02-23 | 1997-10-21 | Micron Technology, Inc. | Wafer carrier having carrier ring adapted for uniform chemical-mechanical planarization of semiconductor wafers |
US5679055A (en) * | 1996-05-31 | 1997-10-21 | Memc Electronic Materials, Inc. | Automated wafer lapping system |
JP2800802B2 (ja) * | 1996-09-20 | 1998-09-21 | 日本電気株式会社 | 半導体ウェハーのcmp装置 |
JP3788533B2 (ja) * | 1996-09-30 | 2006-06-21 | 東京エレクトロン株式会社 | 研磨装置および研磨方法 |
US5857893A (en) * | 1996-10-02 | 1999-01-12 | Speedfam Corporation | Methods and apparatus for measuring and dispensing processing solutions to a CMP machine |
US5736427A (en) * | 1996-10-08 | 1998-04-07 | Micron Technology, Inc. | Polishing pad contour indicator for mechanical or chemical-mechanical planarization |
US6190236B1 (en) * | 1996-10-16 | 2001-02-20 | Vlsi Technology, Inc. | Method and system for vacuum removal of chemical mechanical polishing by-products |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US6012970A (en) * | 1997-01-15 | 2000-01-11 | Motorola, Inc. | Process for forming a semiconductor device |
US5816895A (en) * | 1997-01-17 | 1998-10-06 | Tokyo Seimitsu Co., Ltd. | Surface grinding method and apparatus |
JP3454658B2 (ja) * | 1997-02-03 | 2003-10-06 | 大日本スクリーン製造株式会社 | 研磨処理モニター装置 |
US5938801A (en) * | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
JPH10242271A (ja) * | 1997-02-28 | 1998-09-11 | Sony Corp | 半導体装置及びその製造方法 |
US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
US6062958A (en) | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6146248A (en) | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
US6108091A (en) | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6045434A (en) * | 1997-11-10 | 2000-04-04 | International Business Machines Corporation | Method and apparatus of monitoring polishing pad wear during processing |
US6301009B1 (en) * | 1997-12-01 | 2001-10-09 | Zygo Corporation | In-situ metrology system and method |
US5865901A (en) * | 1997-12-29 | 1999-02-02 | Siemens Aktiengesellschaft | Wafer surface cleaning apparatus and method |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6200199B1 (en) | 1998-03-31 | 2001-03-13 | Applied Materials, Inc. | Chemical mechanical polishing conditioner |
US6113465A (en) * | 1998-06-16 | 2000-09-05 | Speedfam-Ipec Corporation | Method and apparatus for improving die planarity and global uniformity of semiconductor wafers in a chemical mechanical polishing context |
US5944588A (en) * | 1998-06-25 | 1999-08-31 | International Business Machines Corporation | Chemical mechanical polisher |
FR2780552B1 (fr) * | 1998-06-26 | 2000-08-25 | St Microelectronics Sa | Procede de polissage de plaquettes de circuits integres |
JP3001054B1 (ja) * | 1998-06-29 | 2000-01-17 | 日本電気株式会社 | 研磨装置及び研磨パッドの表面調整方法 |
US6093088A (en) * | 1998-06-30 | 2000-07-25 | Nec Corporation | Surface polishing machine |
US5972787A (en) * | 1998-08-18 | 1999-10-26 | International Business Machines Corp. | CMP process using indicator areas to determine endpoint |
US6102776A (en) * | 1999-01-06 | 2000-08-15 | International Business Machines Corporation | Apparatus and method for controlling polishing of integrated circuit substrates |
US6334807B1 (en) | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
US6372600B1 (en) * | 1999-08-30 | 2002-04-16 | Agere Systems Guardian Corp. | Etch stops and alignment marks for bonded wafers |
US6207533B1 (en) | 1999-10-08 | 2001-03-27 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an integrated circuit |
US6257961B1 (en) * | 2000-02-15 | 2001-07-10 | Seh America, Inc. | Rotational speed adjustment for wafer polishing method |
US6629881B1 (en) | 2000-02-17 | 2003-10-07 | Applied Materials, Inc. | Method and apparatus for controlling slurry delivery during polishing |
US6368881B1 (en) | 2000-02-29 | 2002-04-09 | International Business Machines Corporation | Wafer thickness control during backside grind |
US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6428386B1 (en) | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6435952B1 (en) | 2000-06-30 | 2002-08-20 | Lam Research Corporation | Apparatus and method for qualifying a chemical mechanical planarization process |
US6447369B1 (en) | 2000-08-30 | 2002-09-10 | Micron Technology, Inc. | Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates |
US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
EP1324858A1 (de) | 2000-10-06 | 2003-07-09 | Cabot Microelectronics Corporation | Polierkissen mit durchsichtigem füllmaterial |
KR100496607B1 (ko) * | 2000-12-27 | 2005-06-22 | 주식회사 포스코 | 열연코일의 제조방법 및 그 장치 |
US6319093B1 (en) | 2001-02-06 | 2001-11-20 | International Business Machines Corporation | Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement |
US6579149B2 (en) | 2001-02-06 | 2003-06-17 | International Business Machines Corporation | Support and alignment device for enabling chemical mechanical polishing rinse and film measurements |
US6623331B2 (en) | 2001-02-16 | 2003-09-23 | Cabot Microelectronics Corporation | Polishing disk with end-point detection port |
US7086933B2 (en) * | 2002-04-22 | 2006-08-08 | Applied Materials, Inc. | Flexible polishing fluid delivery system |
JP2003124171A (ja) * | 2001-10-19 | 2003-04-25 | Nec Corp | 研磨方法および研磨装置 |
US20060025049A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials, Inc. | Spray slurry delivery system for polish performance improvement and cost reduction |
US7297047B2 (en) * | 2005-12-01 | 2007-11-20 | Applied Materials, Inc. | Bubble suppressing flow controller with ultrasonic flow meter |
US20070131562A1 (en) * | 2005-12-08 | 2007-06-14 | Applied Materials, Inc. | Method and apparatus for planarizing a substrate with low fluid consumption |
MY149984A (en) * | 2006-01-20 | 2013-11-15 | Sumco Corp | Method for smoothing wafer surface and apparatus used therefor |
US20120270474A1 (en) * | 2011-04-20 | 2012-10-25 | Nanya Technology Corporation | Polishing pad wear detecting apparatus |
US20140242877A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials, Inc. | Spectrographic metrology with multiple measurements |
JP6066192B2 (ja) * | 2013-03-12 | 2017-01-25 | 株式会社荏原製作所 | 研磨パッドの表面性状測定装置 |
JP6008053B2 (ja) * | 2013-08-28 | 2016-10-19 | 株式会社Sumco | ウェーハの研磨方法およびウェーハの研磨装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199902A (en) * | 1978-07-17 | 1980-04-29 | Sauerland Franz L | Apparatus for automatic lapping control |
US4735679A (en) * | 1987-03-30 | 1988-04-05 | International Business Machines Corporation | Method of improving silicon-on-insulator uniformity |
DE68927116T2 (de) * | 1988-01-19 | 1997-02-06 | Fujimi Inc | Poliermasse |
US4953982A (en) * | 1988-07-20 | 1990-09-04 | Applied Materials, Inc. | Method and apparatus for endpoint detection in a semiconductor wafer etching system |
US5191738A (en) * | 1989-06-16 | 1993-03-09 | Shin-Etsu Handotai Co., Ltd. | Method of polishing semiconductor wafer |
US5104828A (en) * | 1990-03-01 | 1992-04-14 | Intel Corporation | Method of planarizing a dielectric formed over a semiconductor substrate |
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5064683A (en) * | 1990-10-29 | 1991-11-12 | Motorola, Inc. | Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop |
US5137597A (en) * | 1991-04-11 | 1992-08-11 | Microelectronics And Computer Technology Corporation | Fabrication of metal pillars in an electronic component using polishing |
US5302233A (en) * | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
-
1993
- 1993-05-03 US US08/056,274 patent/US5433650A/en not_active Expired - Fee Related
-
1994
- 1994-04-27 JP JP11018494A patent/JPH06320417A/ja active Pending
- 1994-04-28 EP EP94106654A patent/EP0623423B1/de not_active Expired - Lifetime
- 1994-04-28 DE DE69407088T patent/DE69407088T2/de not_active Expired - Fee Related
- 1994-04-28 SG SG1996003675A patent/SG47674A1/en unknown
- 1994-05-02 KR KR1019940009600A patent/KR940027084A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0623423A1 (de) | 1994-11-09 |
DE69407088D1 (de) | 1998-01-15 |
US5433650A (en) | 1995-07-18 |
SG47674A1 (en) | 1998-04-17 |
KR940027084A (ko) | 1994-12-10 |
EP0623423B1 (de) | 1997-12-03 |
JPH06320417A (ja) | 1994-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69407088D1 (de) | Verfahren zum Polieren eines Substrats | |
DE69635530D1 (de) | Verfahren zum Trocknen eines Substrats | |
DE69225248D1 (de) | Verfahren zum Verarbeiten eines Halbleitersubstrats | |
DE69815024D1 (de) | Verfahren zum Beschichten eines Bauelementes | |
DE69515020D1 (de) | Verfahren zum Züchten eines Halbleiterkristalls | |
DE59400189D1 (de) | Verfahren zum Herstellen eines Metall-Keramik-Substrates | |
DE19781838T1 (de) | Verfahren zur Beschichtung eines Substrats | |
DE69525130T2 (de) | Verfahren zum Verbessern der Auflösung eines Anzeigesystems | |
DE69832011D1 (de) | Vorrichtung und Verfahren zum Waschen eines Substrats | |
DE59406372D1 (de) | Verfahren zum herstellen eines dredidimensionalen objekts | |
DE69409005T2 (de) | Verfahren zum abdichten poröser substrate | |
DE69429122D1 (de) | Verfahren zum Schützen der Oberfläche eines halbleitenden Substrats während des Schleifens | |
DE69426791T2 (de) | Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats | |
DE69317033T2 (de) | Verfahren zum Bilden eines Lotfilms | |
DE69417508T2 (de) | Verfahren zum Aufbringen einer reibungsreduzierenden Schicht | |
DE69121747T2 (de) | Einrichtung zum Halten eines Substrats | |
DE69329369T2 (de) | Verfahren zum Ätzen eines Silizium-Substrats | |
DE69423945D1 (de) | Verfahren zum Reinigen eines Substrates | |
DE69419186T2 (de) | Verfahren zur Ätzung eines halbleitenden Substrats | |
DE59108911D1 (de) | Vorrichtung zum Beschichten eines Substrats | |
DE59409429D1 (de) | Verfahren zum Herstellen eines Metall-Keramik-Substrates | |
DE69307606D1 (de) | Verfahren zum Überziehen eines Metallsubstrats | |
DE69422770T2 (de) | Verfahren und vorrichtung zum beschichten eines glassubstrates | |
DE69103203D1 (de) | Verfahren zum Beschichten eines Werkstücks. | |
DE69215763T2 (de) | Verfahren zum Behandeln bedruckter Substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |