DE69409586T2 - Verpacken von Hochleistungshalbleiterlasern - Google Patents

Verpacken von Hochleistungshalbleiterlasern

Info

Publication number
DE69409586T2
DE69409586T2 DE69409586T DE69409586T DE69409586T2 DE 69409586 T2 DE69409586 T2 DE 69409586T2 DE 69409586 T DE69409586 T DE 69409586T DE 69409586 T DE69409586 T DE 69409586T DE 69409586 T2 DE69409586 T2 DE 69409586T2
Authority
DE
Germany
Prior art keywords
packaging
high power
power semiconductor
semiconductor lasers
lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69409586T
Other languages
English (en)
Other versions
DE69409586D1 (de
Inventor
Douglas Warren Hall
Julia Alyson Sharps
Paul Anthony Jakobson
Roger Frank Cornin Bartholomew
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/091,657 external-priority patent/US5392305A/en
Application filed by Corning Inc filed Critical Corning Inc
Application granted granted Critical
Publication of DE69409586D1 publication Critical patent/DE69409586D1/de
Publication of DE69409586T2 publication Critical patent/DE69409586T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • H01S5/0021Degradation or life time measurements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287Facet reflectivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • H01S5/0222Gas-filled housings
    • H01S5/02224Gas-filled housings the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02235Getter material for absorbing contamination
DE69409586T 1993-07-14 1994-07-14 Verpacken von Hochleistungshalbleiterlasern Expired - Fee Related DE69409586T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/091,657 US5392305A (en) 1993-07-14 1993-07-14 Packaging of high power semiconductor lasers
US08/168,125 US5513198A (en) 1993-07-14 1993-12-17 Packaging of high power semiconductor lasers

Publications (2)

Publication Number Publication Date
DE69409586D1 DE69409586D1 (de) 1998-05-20
DE69409586T2 true DE69409586T2 (de) 1998-10-15

Family

ID=26784203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69409586T Expired - Fee Related DE69409586T2 (de) 1993-07-14 1994-07-14 Verpacken von Hochleistungshalbleiterlasern

Country Status (9)

Country Link
US (3) US5513198A (de)
EP (1) EP0634822B1 (de)
JP (1) JP3452214B2 (de)
KR (1) KR100298149B1 (de)
CN (1) CN1063587C (de)
AU (1) AU672705B2 (de)
CA (1) CA2128068C (de)
DE (1) DE69409586T2 (de)
TW (1) TW291471B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022102087A1 (de) 2022-01-28 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserpackage und verfahren zur herstellung eines laserpackage

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers
BE1007779A3 (nl) * 1993-11-25 1995-10-17 Philips Electronics Nv Opto-electronische halfgeleiderinrichting met een straling-emitterende halfgeleiderdiode en werkwijze van een dergelijke inrichting.
US5696785A (en) * 1994-10-11 1997-12-09 Corning Incorporated Impurity getters in laser enclosures
CA2162095A1 (en) * 1994-12-27 1996-06-28 Jeffery Alan Demeritt Getter housing for electronic packages
US5898211A (en) * 1996-04-30 1999-04-27 Cutting Edge Optronics, Inc. Laser diode package with heat sink
JPH10178077A (ja) * 1996-12-17 1998-06-30 Nec Corp 半導体基板の定量汚染試料の作製方法
SG72795A1 (en) * 1997-03-21 2000-05-23 Tokuyama Corp Container for holding high-purity isopropyl alcohol
WO1999035681A1 (en) * 1998-01-07 1999-07-15 Fed Corporation Assembly for and method of packaging integrated display devices
US5913108A (en) * 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
US6008529A (en) * 1998-06-25 1999-12-28 Bily Wang Laser diode package
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
JP2000133736A (ja) 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子の気密封止方法及び気密封止装置
US6123464A (en) * 1999-02-10 2000-09-26 The Furukawa Electric Co., Ltd. Optical module package and method for manufacturing the same
US6636538B1 (en) 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
US6220767B1 (en) * 1999-05-14 2001-04-24 Corning Incorporated Semiconductor laser optical waveguide telecommunications module and method of making
TWI233430B (en) * 2000-01-28 2005-06-01 Shinetsu Chemical Co Method for manufacturing glass base material, glass base material, and optical fiber
US6590283B1 (en) * 2000-02-28 2003-07-08 Agere Systems Inc. Method for hermetic leadless device interconnect using a submount
JP4629843B2 (ja) * 2000-09-29 2011-02-09 古河電気工業株式会社 半導体レーザモジュール及びその製造方法並びにシステム
US6387723B1 (en) * 2001-01-19 2002-05-14 Silicon Light Machines Reduced surface charging in silicon-based devices
US6700913B2 (en) 2001-05-29 2004-03-02 Northrop Grumman Corporation Low cost high integrity diode laser array
JP2003110180A (ja) * 2001-07-25 2003-04-11 Furukawa Electric Co Ltd:The 半導体レーザモジュール並びに光測定方法及び光測定装置
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
JP2003163407A (ja) * 2001-11-28 2003-06-06 Fujitsu Ltd 光半導体装置
US7110425B2 (en) * 2002-04-03 2006-09-19 Fuji Photo Film Co., Ltd. Laser module and production process thereof
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US7160368B1 (en) 2002-07-12 2007-01-09 Em4, Inc. System and method for gettering gas-phase contaminants within a sealed enclosure
DE10241983A1 (de) * 2002-09-11 2004-03-25 Tui Laser Ag Festkörperlasersystem mit Gehäuse sowie Verfahren zur Montage
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
TWI236196B (en) * 2003-04-24 2005-07-11 Sanyo Electric Co Semiconductor laser device
US7553355B2 (en) * 2003-06-23 2009-06-30 Matheson Tri-Gas Methods and materials for the reduction and control of moisture and oxygen in OLED devices
US20050044802A1 (en) * 2003-08-27 2005-03-03 Bellman Robert A. Method and module for improving the lifetime of metal fluoride optical elements
US7560820B2 (en) * 2004-04-15 2009-07-14 Saes Getters S.P.A. Integrated getter for vacuum or inert gas packaged LEDs
JP2006013436A (ja) * 2004-05-26 2006-01-12 Sharp Corp 窒化物半導体レーザ装置、その製造方法およびその組み立て装置
CN101132113A (zh) * 2004-05-26 2008-02-27 夏普株式会社 氮化物半导体激光器件
JP4030556B2 (ja) * 2005-06-30 2008-01-09 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置
CN100454694C (zh) * 2005-08-02 2009-01-21 夏普株式会社 氮化物半导体发光器件
KR100694019B1 (ko) * 2006-02-16 2007-03-12 주식회사 두산 유기 전계 발광소자용 패키징 재료
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP5030625B2 (ja) * 2006-03-22 2012-09-19 三洋電機株式会社 半導体レーザ装置
US7656915B2 (en) 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
JP4895791B2 (ja) 2006-12-14 2012-03-14 株式会社リコー 光学装置、半導体レーザモジュール、光走査装置及び画像形成装置
WO2010075254A2 (en) * 2008-12-22 2010-07-01 Ams Research Corporation Laser resonator
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US9498846B2 (en) 2010-03-29 2016-11-22 The Aerospace Corporation Systems and methods for preventing or reducing contamination enhanced laser induced damage (C-LID) to optical components using gas phase additives
US8672929B2 (en) 2010-12-15 2014-03-18 Ams Research Corporation Laser probe tip
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
US8660164B2 (en) 2011-03-24 2014-02-25 Axsun Technologies, Inc. Method and system for avoiding package induced failure in swept semiconductor source
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
US9323051B2 (en) 2013-03-13 2016-04-26 The Aerospace Corporation Systems and methods for inhibiting contamination enhanced laser induced damage (CELID) based on fluorinated self-assembled monolayers disposed on optics
US9625671B2 (en) 2013-10-23 2017-04-18 Lasermax, Inc. Laser module and system
US9859680B2 (en) 2013-12-17 2018-01-02 Lasermax, Inc. Shock resistant laser module
KR101549406B1 (ko) * 2014-04-04 2015-09-03 코닝정밀소재 주식회사 발광 다이오드의 색변환용 기판 및 그 제조방법
JP6624899B2 (ja) * 2015-11-18 2019-12-25 住友電気工業株式会社 光モジュール及び光モジュールの製造方法
ITUB20160888A1 (it) * 2016-02-19 2017-08-19 Getters Spa Sistema led
US11079227B2 (en) 2019-04-01 2021-08-03 Honeywell International Inc. Accelerometer system enclosing gas
US11119116B2 (en) 2019-04-01 2021-09-14 Honeywell International Inc. Accelerometer for determining an acceleration based on modulated optical signals
US10956768B2 (en) 2019-04-22 2021-03-23 Honeywell International Inc. Feedback cooling and detection for optomechanical devices
US10705112B1 (en) 2019-04-22 2020-07-07 Honeywell International Inc. Noise rejection for optomechanical devices
US11119114B2 (en) 2019-07-17 2021-09-14 Honeywell International Inc. Anchor structure for securing optomechanical structure
US11408911B2 (en) 2019-07-17 2022-08-09 Honeywell International Inc. Optomechanical structure with corrugated edge
US11408912B2 (en) 2019-08-13 2022-08-09 Honeywell International Inc. Feedthrough rejection for optomechanical devices
US11150264B2 (en) 2019-08-13 2021-10-19 Honeywell International Inc. Feedthrough rejection for optomechanical devices using elements
US11372019B2 (en) 2019-08-13 2022-06-28 Honeywell International Inc. Optomechanical resonator stabilization for optomechanical devices

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576474A (en) * 1968-02-23 1971-04-27 Gen Motors Corp Passivated power rectifier
US3810044A (en) * 1973-02-22 1974-05-07 Hughes Aircraft Co Methods for protecting laser optical elements from surface damage
US4352119A (en) * 1979-09-17 1982-09-28 Beckman Instruments, Inc. Electrical device and method for particle entrapment device for an electrical component
JPS5661761A (en) * 1979-10-24 1981-05-27 Toshiba Corp Metal-vapor electric-discharge lamp
JPS5941620A (ja) * 1982-08-31 1984-03-07 Mazda Motor Corp ディ−ゼルエンジンの排気ガス浄化装置
FR2538618B1 (fr) * 1982-12-28 1986-03-07 Inf Milit Spatiale Aeronaut Boitier pour composant electronique comportant un element fixant l'humidite
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
JPS59208860A (ja) * 1983-05-13 1984-11-27 Hitachi Micro Comput Eng Ltd 半導体装置
JPS60186076A (ja) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体発光装置
US4631267A (en) * 1985-03-18 1986-12-23 Corning Glass Works Method of producing high-strength high surface area catalyst supports
JPS62212220A (ja) * 1986-03-13 1987-09-18 Toyo Soda Mfg Co Ltd ゼオライト成型体の製造方法
JPS62297211A (ja) * 1986-06-13 1987-12-24 Kanebo Ltd ゼオライト多孔体及びその製造法
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
GB8807385D0 (en) * 1988-03-29 1988-05-05 British Telecomm Semiconductor device assembly
US4980137A (en) * 1989-04-03 1990-12-25 Sanitech, Inc. Process for NOx and CO control
US5144634A (en) * 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
JPH0484480A (ja) * 1990-07-27 1992-03-17 Nec Corp チップキャリア型複合光素子
JP2820557B2 (ja) * 1991-08-01 1998-11-05 富士通株式会社 伝送ネットワーク集中監視システム
JPH05343812A (ja) * 1992-06-12 1993-12-24 Kubota Corp 半導体装置
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers
US5392305A (en) * 1993-07-14 1995-02-21 Corning Incorporated Packaging of high power semiconductor lasers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022102087A1 (de) 2022-01-28 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserpackage und verfahren zur herstellung eines laserpackage

Also Published As

Publication number Publication date
US5770473A (en) 1998-06-23
US5513198A (en) 1996-04-30
KR960016028A (ko) 1996-05-22
JP3452214B2 (ja) 2003-09-29
CN1103373A (zh) 1995-06-07
AU672705B2 (en) 1996-10-10
TW291471B (de) 1996-11-21
KR100298149B1 (ko) 2001-10-24
US5629952A (en) 1997-05-13
CA2128068C (en) 1998-12-15
AU6744094A (en) 1995-01-27
CN1063587C (zh) 2001-03-21
EP0634822A1 (de) 1995-01-18
DE69409586D1 (de) 1998-05-20
EP0634822B1 (de) 1998-04-15
JPH07147457A (ja) 1995-06-06
CA2128068A1 (en) 1995-01-15

Similar Documents

Publication Publication Date Title
DE69409586T2 (de) Verpacken von Hochleistungshalbleiterlasern
DE69318658D1 (de) Leistungs-Halbeiterbauelement
DE59306825D1 (de) Durchstimmbarer Halbeiterlaser
DE69319026D1 (de) Halbleiter-Leistungsmodul
DE69325232D1 (de) Leistungshalbleitermodul
DE69325953T2 (de) Leistungshalbleitermodul
DE59304797D1 (de) Leistungshalbleiter-Modul
DE69407455T2 (de) Halbleiterlaser
DE69320750D1 (de) Halbleiterlasermodul
DE69305928D1 (de) Halbleiterlaser
DE69420327D1 (de) Halbleiter-Leistungsschaltung
DE69411364D1 (de) Halbleiterlaser
DE69312836D1 (de) Vielfachhalbleiterlaser
DE69409564T2 (de) Halbleiterlaser und Modulationsverfahren
DE69432345D1 (de) Halbleiterdiodenlaser
DE69209045D1 (de) Halbleiterlaser
DE59308771D1 (de) Halbleiter-Lasermodul
DE69322140T2 (de) Halbleiterpackung
DE69315308T2 (de) Halbleiterleistungsregler
DE69409597D1 (de) Leistungshalbleiterbauelement
DE69303679D1 (de) Hochleistungshalbleiterlaser mit verteilter Rückkoppelung
DE69224054D1 (de) Halbleiterlaser
DE69407374D1 (de) Halbleiterlaser
DE69209520D1 (de) Anordnung von halbleiterlasern.
DE69402115D1 (de) Halbleiterlaser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee