DE69414760D1 - Halbleiter-Speichervorrichtung - Google Patents
Halbleiter-SpeichervorrichtungInfo
- Publication number
- DE69414760D1 DE69414760D1 DE69414760T DE69414760T DE69414760D1 DE 69414760 D1 DE69414760 D1 DE 69414760D1 DE 69414760 T DE69414760 T DE 69414760T DE 69414760 T DE69414760 T DE 69414760T DE 69414760 D1 DE69414760 D1 DE 69414760D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- semiconductor
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11681593A JP3277603B2 (ja) | 1993-05-19 | 1993-05-19 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69414760D1 true DE69414760D1 (de) | 1999-01-07 |
DE69414760T2 DE69414760T2 (de) | 1999-04-15 |
Family
ID=14696333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69414760T Expired - Lifetime DE69414760T2 (de) | 1993-05-19 | 1994-04-25 | Halbleiter-Speichervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5455803A (de) |
EP (1) | EP0630024B1 (de) |
JP (1) | JP3277603B2 (de) |
DE (1) | DE69414760T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6810449B1 (en) | 1995-10-19 | 2004-10-26 | Rambus, Inc. | Protocol for communication with dynamic memory |
US6035369A (en) | 1995-10-19 | 2000-03-07 | Rambus Inc. | Method and apparatus for providing a memory with write enable information |
US6470405B2 (en) | 1995-10-19 | 2002-10-22 | Rambus Inc. | Protocol for communication with dynamic memory |
KR970051229A (ko) * | 1995-12-22 | 1997-07-29 | 김광호 | 비동기 발생신호를 사용하는 반도체 메모리 장치 |
JPH09180435A (ja) * | 1995-12-28 | 1997-07-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5666324A (en) * | 1996-03-15 | 1997-09-09 | Mitsubishi Denki Kabushiki Kaisha | Clock synchronous semiconductor memory device having current consumption reduced |
JP3893167B2 (ja) * | 1996-04-26 | 2007-03-14 | 株式会社ルネサステクノロジ | 同期型半導体記憶装置 |
US6209071B1 (en) | 1996-05-07 | 2001-03-27 | Rambus Inc. | Asynchronous request/synchronous data dynamic random access memory |
US6266379B1 (en) | 1997-06-20 | 2001-07-24 | Massachusetts Institute Of Technology | Digital transmitter with equalization |
KR100496787B1 (ko) * | 1997-08-08 | 2005-09-12 | 삼성전자주식회사 | 고속반도체메모리장치의억세스시간을줄이기위한제어방법및컨트롤라 |
JPH1186557A (ja) * | 1997-09-11 | 1999-03-30 | Mitsubishi Electric Corp | 同期型記憶装置および同期型記憶装置におけるデータ読み出し方法 |
US6401167B1 (en) | 1997-10-10 | 2002-06-04 | Rambus Incorporated | High performance cost optimized memory |
WO1999019805A1 (en) | 1997-10-10 | 1999-04-22 | Rambus Incorporated | Method and apparatus for two step memory write operations |
KR100306881B1 (ko) * | 1998-04-02 | 2001-10-29 | 박종섭 | 동기 반도체 메모리를 위한 인터페이스 |
KR100301822B1 (ko) * | 1999-07-21 | 2001-11-01 | 김영환 | 불휘발성 강유전체 메모리 장치의 센싱앰프 |
KR100396885B1 (ko) * | 2000-09-05 | 2003-09-02 | 삼성전자주식회사 | 고주파 클럭 신호의 주파수를 낮추어 어드레스 및커맨드의 동작 주파수로 사용하고 서로 다른 주파수의클럭 신호들을 수신하는 반도체 메모리 장치, 이를포함하는 메모리 모듈 및 시스템 메모리 모듈 |
US6675272B2 (en) | 2001-04-24 | 2004-01-06 | Rambus Inc. | Method and apparatus for coordinating memory operations among diversely-located memory components |
US8391039B2 (en) | 2001-04-24 | 2013-03-05 | Rambus Inc. | Memory module with termination component |
JP2002328744A (ja) * | 2001-04-27 | 2002-11-15 | Fujitsu Ltd | 半導体集積回路装置 |
US6928026B2 (en) | 2002-03-19 | 2005-08-09 | Broadcom Corporation | Synchronous global controller for enhanced pipelining |
US20050249025A1 (en) * | 2004-04-27 | 2005-11-10 | Via Technologies, Inc. | Method and System For A Variable Frequency SDRAM Controller |
US7301831B2 (en) | 2004-09-15 | 2007-11-27 | Rambus Inc. | Memory systems with variable delays for write data signals |
CN102147848A (zh) * | 2010-02-08 | 2011-08-10 | 智微科技股份有限公司 | 设定存储卡的操作频率的方法及相关读卡装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3324711C2 (de) * | 1983-07-08 | 1986-07-24 | Hewlett-Packard GmbH, 7030 Böblingen | Impulsgenerator |
JPS6154098A (ja) * | 1984-08-23 | 1986-03-18 | Fujitsu Ltd | パルス発生回路 |
US4998222A (en) * | 1989-12-04 | 1991-03-05 | Nec Electronics Inc. | Dynamic random access memory with internally gated RAS |
US5327394A (en) * | 1992-02-04 | 1994-07-05 | Micron Technology, Inc. | Timing and control circuit for a static RAM responsive to an address transition pulse |
US5336939A (en) * | 1992-05-08 | 1994-08-09 | Cyrix Corporation | Stable internal clock generation for an integrated circuit |
-
1993
- 1993-05-19 JP JP11681593A patent/JP3277603B2/ja not_active Expired - Lifetime
-
1994
- 1994-04-25 US US08/231,677 patent/US5455803A/en not_active Expired - Lifetime
- 1994-04-25 DE DE69414760T patent/DE69414760T2/de not_active Expired - Lifetime
- 1994-04-25 EP EP94302935A patent/EP0630024B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5455803A (en) | 1995-10-03 |
EP0630024B1 (de) | 1998-11-25 |
DE69414760T2 (de) | 1999-04-15 |
JP3277603B2 (ja) | 2002-04-22 |
JPH06333388A (ja) | 1994-12-02 |
EP0630024A1 (de) | 1994-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |