DE69415987D1 - Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder - Google Patents
Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische FelderInfo
- Publication number
- DE69415987D1 DE69415987D1 DE69415987T DE69415987T DE69415987D1 DE 69415987 D1 DE69415987 D1 DE 69415987D1 DE 69415987 T DE69415987 T DE 69415987T DE 69415987 T DE69415987 T DE 69415987T DE 69415987 D1 DE69415987 D1 DE 69415987D1
- Authority
- DE
- Germany
- Prior art keywords
- electric fields
- protect against
- high electric
- against high
- integrated arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005684 electric field Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94830530A EP0714135B1 (de) | 1994-11-08 | 1994-11-08 | Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69415987D1 true DE69415987D1 (de) | 1999-02-25 |
DE69415987T2 DE69415987T2 (de) | 1999-06-24 |
Family
ID=8218573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69415987T Expired - Fee Related DE69415987T2 (de) | 1994-11-08 | 1994-11-08 | Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder |
Country Status (4)
Country | Link |
---|---|
US (1) | US5777366A (de) |
EP (1) | EP0714135B1 (de) |
JP (1) | JP2957118B2 (de) |
DE (1) | DE69415987T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710723A (zh) * | 2020-07-16 | 2020-09-25 | 杰华特微电子(杭州)有限公司 | 横向双扩散晶体管及其制造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2953416B2 (ja) * | 1996-12-27 | 1999-09-27 | 日本電気株式会社 | 半導体装置 |
US6346451B1 (en) * | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
JP3180776B2 (ja) * | 1998-09-22 | 2001-06-25 | 日本電気株式会社 | 電界効果型トランジスタ |
JP2002353444A (ja) * | 2001-05-28 | 2002-12-06 | Fuji Electric Co Ltd | 半導体装置 |
SE522910C2 (sv) * | 2002-06-03 | 2004-03-16 | Ericsson Telefon Ab L M | Integrerad krets för reducering av strömdensitet i en transistor innefattande sammanflätade kollektor-, emitter- och styrfingrar |
US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
US8236640B2 (en) * | 2009-12-18 | 2012-08-07 | Intel Corporation | Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions |
US8754469B2 (en) | 2010-10-26 | 2014-06-17 | Texas Instruments Incorporated | Hybrid active-field gap extended drain MOS transistor |
JP2014154595A (ja) * | 2013-02-05 | 2014-08-25 | Seiko Instruments Inc | 半導体装置 |
KR102122365B1 (ko) * | 2014-12-12 | 2020-06-12 | 삼성전자주식회사 | 반도체 소자 |
CN105742365A (zh) * | 2016-04-14 | 2016-07-06 | 东莞电子科技大学电子信息工程研究院 | 射频ldmos晶体管及其制作方法 |
CN107845675B (zh) * | 2017-10-30 | 2020-02-18 | 济南大学 | 一种横向双扩散金属氧化物半导体场效应管 |
CN109980011A (zh) * | 2017-12-28 | 2019-07-05 | 无锡华润上华科技有限公司 | 一种半导体器件及其制作方法 |
US10665712B2 (en) * | 2018-09-05 | 2020-05-26 | Monolithic Power Systems, Inc. | LDMOS device with a field plate contact metal layer with a sub-maximum size |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5372577A (en) * | 1976-12-10 | 1978-06-28 | Hitachi Ltd | High dielectric strength field effect transistor |
DE2852621C4 (de) * | 1978-12-05 | 1995-11-30 | Siemens Ag | Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone |
GB2049273B (en) * | 1979-05-02 | 1983-05-25 | Philips Electronic Associated | Method for short-circuting igfet source regions to a substrate |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JP2804294B2 (ja) * | 1988-06-17 | 1998-09-24 | エヌティエヌ株式会社 | 滑り軸受用潤滑性樹脂組成物 |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
EP0565808B1 (de) * | 1992-04-17 | 1996-12-11 | STMicroelectronics S.r.l. | Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement |
-
1994
- 1994-11-08 EP EP94830530A patent/EP0714135B1/de not_active Expired - Lifetime
- 1994-11-08 DE DE69415987T patent/DE69415987T2/de not_active Expired - Fee Related
-
1995
- 1995-11-07 US US08/553,154 patent/US5777366A/en not_active Expired - Lifetime
- 1995-11-08 JP JP7290092A patent/JP2957118B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710723A (zh) * | 2020-07-16 | 2020-09-25 | 杰华特微电子(杭州)有限公司 | 横向双扩散晶体管及其制造方法 |
CN111710723B (zh) * | 2020-07-16 | 2022-09-16 | 杰华特微电子股份有限公司 | 横向双扩散晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH08255906A (ja) | 1996-10-01 |
EP0714135A1 (de) | 1996-05-29 |
DE69415987T2 (de) | 1999-06-24 |
JP2957118B2 (ja) | 1999-10-04 |
EP0714135B1 (de) | 1999-01-13 |
US5777366A (en) | 1998-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |