DE69416489D1 - Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren - Google Patents
Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahrenInfo
- Publication number
- DE69416489D1 DE69416489D1 DE69416489T DE69416489T DE69416489D1 DE 69416489 D1 DE69416489 D1 DE 69416489D1 DE 69416489 T DE69416489 T DE 69416489T DE 69416489 T DE69416489 T DE 69416489T DE 69416489 D1 DE69416489 D1 DE 69416489D1
- Authority
- DE
- Germany
- Prior art keywords
- processing apparatus
- plasma processing
- microwave plasma
- microwave
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5283028A JPH07142444A (ja) | 1993-11-12 | 1993-11-12 | マイクロ波プラズマ処理装置および処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416489D1 true DE69416489D1 (de) | 1999-03-25 |
DE69416489T2 DE69416489T2 (de) | 1999-09-30 |
Family
ID=17660290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416489T Expired - Fee Related DE69416489T2 (de) | 1993-11-12 | 1994-11-10 | Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5861601A (de) |
EP (1) | EP0653775B1 (de) |
JP (1) | JPH07142444A (de) |
KR (1) | KR100388584B1 (de) |
DE (1) | DE69416489T2 (de) |
TW (1) | TW266307B (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263187A (ja) * | 1994-03-18 | 1995-10-13 | Hitachi Ltd | プラズマ処理装置 |
US5885353A (en) | 1996-06-21 | 1999-03-23 | Micron Technology, Inc. | Thermal conditioning apparatus |
DE19713352A1 (de) * | 1997-03-29 | 1998-10-01 | Deutsch Zentr Luft & Raumfahrt | Plasmabrennersystem |
DE69807006T2 (de) * | 1997-05-22 | 2003-01-02 | Canon Kk | Plasmabehandlungsvorrichtung mit einem mit ringförmigem Wellenleiter versehenen Mikrowellenauftragsgerät und Behandlungsverfahren |
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
JP2000124195A (ja) * | 1998-10-14 | 2000-04-28 | Tokyo Electron Ltd | 表面処理方法及びその装置 |
JP3352418B2 (ja) | 1999-01-28 | 2002-12-03 | キヤノン株式会社 | 減圧処理方法及び減圧処理装置 |
JP3310957B2 (ja) * | 1999-08-31 | 2002-08-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2001203099A (ja) | 2000-01-20 | 2001-07-27 | Yac Co Ltd | プラズマ生成装置およびプラズマ処理装置 |
JP4504511B2 (ja) * | 2000-05-26 | 2010-07-14 | 忠弘 大見 | プラズマ処理装置 |
JP3574401B2 (ja) * | 2000-12-13 | 2004-10-06 | シャープ株式会社 | プラズマプロセス装置 |
US6589868B2 (en) * | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
US20040221800A1 (en) * | 2001-02-27 | 2004-11-11 | Tokyo Electron Limited | Method and apparatus for plasma processing |
IL153154A (en) * | 2001-03-28 | 2007-03-08 | Tadahiro Ohmi | Plasma processing device |
JP3870909B2 (ja) * | 2003-01-31 | 2007-01-24 | 株式会社島津製作所 | プラズマ処理装置 |
JP4213482B2 (ja) * | 2003-02-07 | 2009-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20060137613A1 (en) * | 2004-01-27 | 2006-06-29 | Shigeru Kasai | Plasma generating apparatus, plasma generating method and remote plasma processing apparatus |
JP5312411B2 (ja) * | 2003-02-14 | 2013-10-09 | 東京エレクトロン株式会社 | プラズマ発生装置およびリモートプラズマ処理装置 |
KR100893955B1 (ko) * | 2004-02-19 | 2009-04-20 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치에 있어서의 처리실의 클리닝 방법 및 클리닝의 종점 검출 방법 |
JP2006294422A (ja) * | 2005-04-11 | 2006-10-26 | Tokyo Electron Ltd | プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法 |
US8118946B2 (en) * | 2007-11-30 | 2012-02-21 | Wesley George Lau | Cleaning process residues from substrate processing chamber components |
JP4793662B2 (ja) * | 2008-03-28 | 2011-10-12 | 独立行政法人産業技術総合研究所 | マイクロ波プラズマ処理装置 |
US9890457B2 (en) * | 2008-06-16 | 2018-02-13 | Board Of Trustees Of Michigan State University | Microwave plasma reactors |
JP2011124295A (ja) * | 2009-12-09 | 2011-06-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP5657953B2 (ja) * | 2010-08-27 | 2015-01-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20160314939A1 (en) * | 2015-04-24 | 2016-10-27 | Surmet Corporation | Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment |
JP6509049B2 (ja) * | 2015-06-05 | 2019-05-08 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
CN107680915B (zh) * | 2016-08-02 | 2020-11-10 | 北京北方华创微电子装备有限公司 | 等离子体源的冷却机构及半导体加工设备 |
JP6698560B2 (ja) | 2017-02-01 | 2020-05-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法 |
KR102141438B1 (ko) * | 2018-07-20 | 2020-08-05 | 주식회사 히타치하이테크 | 플라스마 처리 장치 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
US4870245A (en) * | 1985-04-01 | 1989-09-26 | Motorola, Inc. | Plasma enhanced thermal treatment apparatus |
JPS6376434A (ja) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | プラズマ処理装置及びプラズマクリーニング方法 |
EP0264913B1 (de) * | 1986-10-20 | 1994-06-22 | Hitachi, Ltd. | Plasmabearbeitungsgerät |
US5215619A (en) * | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
JPH029115A (ja) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2680065B2 (ja) * | 1988-09-22 | 1997-11-19 | 株式会社日立製作所 | プラズマクリーニング方法 |
EP0406690B1 (de) * | 1989-06-28 | 1997-03-12 | Canon Kabushiki Kaisha | Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht |
US5084125A (en) * | 1989-09-12 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for producing semiconductor substrate |
US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
DE69123808T2 (de) * | 1990-09-26 | 1997-06-26 | Hitachi Ltd | Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma |
EP0502269A1 (de) * | 1991-03-06 | 1992-09-09 | Hitachi, Ltd. | Verfahren und Anordnung zum Behandeln mittels Mikrowellenplasmas |
EP0510340B1 (de) * | 1991-04-23 | 1995-05-10 | Balzers Aktiengesellschaft | Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer |
US5198725A (en) * | 1991-07-12 | 1993-03-30 | Lam Research Corporation | Method of producing flat ecr layer in microwave plasma device and apparatus therefor |
KR100293830B1 (ko) * | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
US5410122A (en) * | 1993-03-15 | 1995-04-25 | Applied Materials, Inc. | Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers |
US5454903A (en) * | 1993-10-29 | 1995-10-03 | Applied Materials, Inc. | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization |
US5507874A (en) * | 1994-06-03 | 1996-04-16 | Applied Materials, Inc. | Method of cleaning of an electrostatic chuck in plasma reactors |
-
1993
- 1993-11-12 JP JP5283028A patent/JPH07142444A/ja active Pending
-
1994
- 1994-11-09 TW TW083110384A patent/TW266307B/zh not_active IP Right Cessation
- 1994-11-10 DE DE69416489T patent/DE69416489T2/de not_active Expired - Fee Related
- 1994-11-10 EP EP94117757A patent/EP0653775B1/de not_active Expired - Lifetime
- 1994-11-11 KR KR1019940029516A patent/KR100388584B1/ko not_active IP Right Cessation
- 1994-11-14 US US08/340,337 patent/US5861601A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH07142444A (ja) | 1995-06-02 |
EP0653775B1 (de) | 1999-02-10 |
KR100388584B1 (ko) | 2003-09-19 |
EP0653775A1 (de) | 1995-05-17 |
KR950015620A (ko) | 1995-06-17 |
US5861601A (en) | 1999-01-19 |
DE69416489T2 (de) | 1999-09-30 |
TW266307B (de) | 1995-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |