DE69416950T2 - DMOSFET mit einem Widerstand zum Verbessern der Stromführung im Sperrbetrieb - Google Patents
DMOSFET mit einem Widerstand zum Verbessern der Stromführung im SperrbetriebInfo
- Publication number
- DE69416950T2 DE69416950T2 DE69416950T DE69416950T DE69416950T2 DE 69416950 T2 DE69416950 T2 DE 69416950T2 DE 69416950 T DE69416950 T DE 69416950T DE 69416950 T DE69416950 T DE 69416950T DE 69416950 T2 DE69416950 T2 DE 69416950T2
- Authority
- DE
- Germany
- Prior art keywords
- dmosfet
- resistor
- improve
- current flow
- reverse operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28324093A JP3334290B2 (ja) | 1993-11-12 | 1993-11-12 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69416950D1 DE69416950D1 (de) | 1999-04-15 |
| DE69416950T2 true DE69416950T2 (de) | 1999-11-11 |
Family
ID=17662910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69416950T Expired - Lifetime DE69416950T2 (de) | 1993-11-12 | 1994-11-09 | DMOSFET mit einem Widerstand zum Verbessern der Stromführung im Sperrbetrieb |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5696396A (de) |
| EP (1) | EP0656661B1 (de) |
| JP (1) | JP3334290B2 (de) |
| DE (1) | DE69416950T2 (de) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69409615T2 (de) * | 1993-12-07 | 1998-12-03 | Denso Corp | Wechselstromgenerator für Motorfahrzeug |
| US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
| EP0746030B1 (de) * | 1995-06-02 | 2001-11-21 | SILICONIX Incorporated | Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer Anordnung |
| EP0746042B1 (de) * | 1995-06-02 | 2004-03-31 | SILICONIX Incorporated | Bidirektional sperrender Graben-Leistungs-MOSFET |
| US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
| US5998837A (en) * | 1995-06-02 | 1999-12-07 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode having adjustable breakdown voltage |
| JP3575110B2 (ja) * | 1995-06-06 | 2004-10-13 | 株式会社デンソー | 車両用交流発電機 |
| US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
| DE19636302C2 (de) * | 1995-09-06 | 1998-08-20 | Denso Corp | Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung |
| JP3471509B2 (ja) * | 1996-01-23 | 2003-12-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6133587A (en) * | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
| JPH09331062A (ja) * | 1996-06-11 | 1997-12-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH10335649A (ja) * | 1997-05-27 | 1998-12-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
| JPH1167786A (ja) * | 1997-08-25 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP4192281B2 (ja) | 1997-11-28 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP3068540B2 (ja) * | 1997-12-08 | 2000-07-24 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路及び電源回路 |
| US6002277A (en) * | 1998-04-06 | 1999-12-14 | Intersil Corporation | Sample-and-hold circuit having reduced parasitic diode effects and related methods |
| US6016067A (en) * | 1998-04-06 | 2000-01-18 | Intersil Corporation | Sample-and-hold circuit having reduced amplifier offset effects and related methods |
| US6069502A (en) * | 1998-04-06 | 2000-05-30 | Intersil Corporation | Sample-and-hold circuit having reduced subthreshold conduction effects and related methods |
| US6117602A (en) * | 1999-01-19 | 2000-09-12 | Xerox Corporation | Electrostatic printing method and apparatus having enhanced image resolution characteristics |
| US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| US6809348B1 (en) * | 1999-10-08 | 2004-10-26 | Denso Corporation | Semiconductor device and method for manufacturing the same |
| KR20020059652A (ko) * | 1999-10-27 | 2002-07-13 | 다쯔타 도키오 | 유니폴라 트랜지스터 및 이 유니폴라 트랜지스터를 구비한전력 컨버터 |
| JP2001145369A (ja) * | 1999-11-18 | 2001-05-25 | Fuji Electric Co Ltd | インバータ |
| IT1311309B1 (it) * | 1999-12-10 | 2002-03-12 | St Microelectronics Srl | Resistore verticale integrato ad alta tensione e relativo processo difabbricazione. |
| DE10001869B4 (de) * | 2000-01-18 | 2006-10-26 | Infineon Technologies Ag | In beiden Richtungen sperrendes steuerbares Halbleiterschaltelement |
| DE10001871A1 (de) * | 2000-01-18 | 2001-08-02 | Infineon Technologies Ag | Verfahren zur Herstellung eines steuerbaren Halbleiterschalt-elements und steuerbares Halbleiterschaltelement |
| DE10024518B4 (de) * | 2000-05-18 | 2006-12-07 | Infineon Technologies Ag | Integriertes Halbleiterschaltelement und Herstellungsverfahren |
| DE10026742B4 (de) * | 2000-05-30 | 2007-11-22 | Infineon Technologies Ag | In beide Richtungen sperrendes Halbleiterschaltelement |
| US6534828B1 (en) * | 2000-09-19 | 2003-03-18 | Fairchild Semiconductor Corporation | Integrated circuit device including a deep well region and associated methods |
| DE10060428B4 (de) | 2000-12-05 | 2006-07-06 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares in beide Richtungen sperrendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US6504208B2 (en) | 2001-02-27 | 2003-01-07 | International Business Machines Corporation | Power MOSFET device, structures employing the same and methods of fabrication |
| DE10117360B4 (de) * | 2001-04-06 | 2006-03-16 | Infineon Technologies Ag | Halbbrückenschaltung |
| DE10217610B4 (de) | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
| US7164155B2 (en) * | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2004055803A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
| US6885065B2 (en) * | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| EP2560210B1 (de) * | 2003-09-24 | 2018-11-28 | Nissan Motor Co., Ltd. | Halbleiterbauelement und Herstellungsverfahren dafür |
| JP4852876B2 (ja) * | 2005-04-27 | 2012-01-11 | トヨタ自動車株式会社 | 半導体装置 |
| DE102006031538A1 (de) * | 2006-07-07 | 2008-01-17 | Infineon Technologies Ag | Integrierte Halbleiteranordnung und Herstellverfahren dafür |
| CN101548386B (zh) | 2006-12-04 | 2011-11-09 | 三垦电气株式会社 | 绝缘栅型场效应晶体管及其制造方法 |
| US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
| US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| JP5526496B2 (ja) * | 2008-06-02 | 2014-06-18 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
| US7915944B2 (en) * | 2009-04-27 | 2011-03-29 | General Electric Company | Gate drive circuitry for non-isolated gate semiconductor devices |
| WO2010125819A1 (ja) | 2009-04-30 | 2010-11-04 | パナソニック株式会社 | 半導体素子、半導体装置および電力変換器 |
| CN102473645B (zh) | 2009-08-19 | 2013-07-10 | 松下电器产业株式会社 | 半导体元件、半导体装置以及功率变换器 |
| US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
| US9431530B2 (en) * | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
| JPWO2011092808A1 (ja) * | 2010-01-27 | 2013-05-30 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| CN102598265A (zh) * | 2010-10-29 | 2012-07-18 | 松下电器产业株式会社 | 半导体元件 |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
| EP3183753A4 (de) | 2014-08-19 | 2018-01-10 | Vishay-Siliconix | Elektronische schaltung |
| JP6515842B2 (ja) * | 2016-03-10 | 2019-05-22 | 豊田合成株式会社 | 半導体装置 |
| DE102016109235B4 (de) | 2016-05-19 | 2019-02-14 | Infineon Technologies Ag | Elektrische baugruppe, die eine rückwärts leitende schaltvorrichtung und eine gleichrichtende vorrichtung enthält |
| CN114068675A (zh) * | 2021-11-16 | 2022-02-18 | 大连海事大学 | 一种双极分裂栅增强型功率晶体管 |
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|---|---|---|---|---|
| JPS5974674A (ja) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | 絶縁ゲ−ト半導体装置とその製造法 |
| US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
| JPS6180858A (ja) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | パワ−ｍｏｓｆｅｔ |
| JPS6212167A (ja) * | 1985-07-10 | 1987-01-21 | Tdk Corp | 溝部を有する縦形半導体装置の製造方法 |
| JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
| JPH01135072A (ja) * | 1987-11-20 | 1989-05-26 | Nissan Motor Co Ltd | 縦形ｍｏｓｆｅｔ |
| JPH01134974A (ja) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | 縦型ｍｏｓｆｅｔ |
| JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH0793434B2 (ja) * | 1989-05-23 | 1995-10-09 | 株式会社東芝 | 半導体装置 |
| JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP2917532B2 (ja) * | 1991-01-24 | 1999-07-12 | 富士電機株式会社 | 電界効果トランジスタ |
| JP3321189B2 (ja) * | 1991-10-04 | 2002-09-03 | 株式会社東芝 | 電力用半導体素子 |
| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| US5389799A (en) * | 1992-06-12 | 1995-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
| US5399515A (en) * | 1993-07-12 | 1995-03-21 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET and device |
| US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
-
1993
- 1993-11-12 JP JP28324093A patent/JP3334290B2/ja not_active Expired - Lifetime
-
1994
- 1994-11-09 DE DE69416950T patent/DE69416950T2/de not_active Expired - Lifetime
- 1994-11-09 EP EP94117694A patent/EP0656661B1/de not_active Expired - Lifetime
-
1996
- 1996-10-21 US US08/734,132 patent/US5696396A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07142722A (ja) | 1995-06-02 |
| JP3334290B2 (ja) | 2002-10-15 |
| DE69416950D1 (de) | 1999-04-15 |
| US5696396A (en) | 1997-12-09 |
| EP0656661A1 (de) | 1995-06-07 |
| EP0656661B1 (de) | 1999-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) |