DE69417682T2 - Verfahren zum Zuführen von Gasen in eine Reaktions- bzw. Niederschlagskammer - Google Patents

Verfahren zum Zuführen von Gasen in eine Reaktions- bzw. Niederschlagskammer

Info

Publication number
DE69417682T2
DE69417682T2 DE69417682T DE69417682T DE69417682T2 DE 69417682 T2 DE69417682 T2 DE 69417682T2 DE 69417682 T DE69417682 T DE 69417682T DE 69417682 T DE69417682 T DE 69417682T DE 69417682 T2 DE69417682 T2 DE 69417682T2
Authority
DE
Germany
Prior art keywords
reaction
precipitation chamber
feeding gases
gases
feeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417682T
Other languages
English (en)
Other versions
DE69417682D1 (de
Inventor
Yukio Minami
Nobukazu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69417682D1 publication Critical patent/DE69417682D1/de
Application granted granted Critical
Publication of DE69417682T2 publication Critical patent/DE69417682T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/87499—Fluid actuated or retarded
DE69417682T 1993-10-27 1994-09-22 Verfahren zum Zuführen von Gasen in eine Reaktions- bzw. Niederschlagskammer Expired - Fee Related DE69417682T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26868993A JP3332053B2 (ja) 1993-10-27 1993-10-27 チャンバーへのガス供給方法

Publications (2)

Publication Number Publication Date
DE69417682D1 DE69417682D1 (de) 1999-05-12
DE69417682T2 true DE69417682T2 (de) 2000-01-05

Family

ID=17462022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417682T Expired - Fee Related DE69417682T2 (de) 1993-10-27 1994-09-22 Verfahren zum Zuführen von Gasen in eine Reaktions- bzw. Niederschlagskammer

Country Status (8)

Country Link
US (1) US5488967A (de)
EP (1) EP0651432B1 (de)
JP (1) JP3332053B2 (de)
KR (1) KR0138609B1 (de)
CA (1) CA2134426C (de)
DE (1) DE69417682T2 (de)
SG (1) SG45144A1 (de)
TW (1) TW267235B (de)

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TW342429B (en) * 1995-07-14 1998-10-11 Tadahiro Omi Fluid control system and valve used in it
US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
KR100483434B1 (ko) * 1998-03-04 2005-08-31 삼성전자주식회사 반도체장치제조설비
US6228773B1 (en) 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6050132A (en) * 1998-06-15 2000-04-18 Capria; Michael Method and apparatus for hyperbaric chamber gas discharge and pressure management
US6082414A (en) * 1998-12-03 2000-07-04 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for replacing an attachment on a vacuum chamber
JP2000271471A (ja) * 1999-03-24 2000-10-03 Nippon M K S Kk 液体ソース供給システム及びその洗浄方法、気化器
JP3579763B2 (ja) 1999-07-01 2004-10-20 日本酸素株式会社 ガス供給装置及び方法
FR2797997B1 (fr) 1999-08-26 2002-04-05 Cit Alcatel Procede et dispositif pour le traitement de substrat sous vide par plasma
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6223770B1 (en) * 1999-09-29 2001-05-01 Lsi Logic Corporation Vacuum valve interface
US6129108A (en) * 1999-12-03 2000-10-10 United Semiconductor Corp Fluid delivering system
CN1306062C (zh) * 2001-10-15 2007-03-21 微米技术公司 原子层沉积装置和方法
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR100863782B1 (ko) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
JP2005534174A (ja) * 2002-07-19 2005-11-10 アクセリス テクノロジーズ， インコーポレイテッド フォトレジスト・アッシング装置
CN100458629C (zh) * 2002-11-08 2009-02-04 东京毅力科创株式会社 流体处理装置及流体处理方法
GB0322602D0 (en) * 2003-09-26 2003-10-29 Boc Group Inc Vent-run gas switching systems
US20050145181A1 (en) * 2003-12-31 2005-07-07 Dickinson Colin J. Method and apparatus for high speed atomic layer deposition
JP4553265B2 (ja) * 2007-03-23 2010-09-29 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
US11833281B2 (en) 2008-01-23 2023-12-05 Deka Products Limited Partnership Pump cassette and methods for use in medical treatment system using a plurality of fluid lines
US8708950B2 (en) 2010-07-07 2014-04-29 Deka Products Limited Partnership Medical treatment system and methods using a plurality of fluid lines
US9248225B2 (en) 2008-01-23 2016-02-02 Deka Products Limited Partnership Medical treatment system and methods using a plurality of fluid lines
US20090242046A1 (en) * 2008-03-31 2009-10-01 Benjamin Riordon Valve module
US8383525B2 (en) * 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
KR101940325B1 (ko) * 2011-10-05 2019-01-18 가부시키가이샤 호리바 에스텍 유체 기구 및 상기 유체 기구를 구성하는 지지 부재 및 유체 제어 시스템
CN103090187B (zh) * 2011-10-27 2014-12-10 河南省电力勘测设计院 一种安全高效无人值守的电厂高压供氢系统及其实施方法
JP6267491B2 (ja) * 2013-11-08 2018-01-24 株式会社堀場エステック 流体切換装置
EP3698826A1 (de) 2014-06-05 2020-08-26 DEKA Products Limited Partnership System zur berechnung einer änderung im flüssigkeitsvolumen in einer pumpenkammer
CN108060410B (zh) * 2017-12-15 2023-08-18 浙江晶盛机电股份有限公司 用于平板式pecvd的进气管道保护结构
BR112020019993A2 (pt) 2018-03-30 2021-01-26 Deka Products Limited Partnership cassetes de bombeamento de líquidos e coletor de distribuição de pressão associado e métodos relacionados
CN108458250B (zh) * 2018-04-16 2024-01-30 谢东波 一种可调节流体流量的联动管及系统
CN110764543B (zh) * 2018-07-26 2023-06-30 中国石油天然气股份有限公司 仪表分析器真空度的保持装置及方法
JP2020139864A (ja) * 2019-02-28 2020-09-03 株式会社堀場エステック 流量算出システム、流量算出システム用プログラム、流量算出方法、及び、流量算出装置
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置
CN110925598B (zh) * 2019-12-11 2020-10-09 广州广钢气体能源股份有限公司 一种电子气阀门切换系统及切换方法

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US5368062A (en) * 1992-01-29 1994-11-29 Kabushiki Kaisha Toshiba Gas supplying system and gas supplying apparatus

Also Published As

Publication number Publication date
US5488967A (en) 1996-02-06
CA2134426A1 (en) 1995-04-28
EP0651432B1 (de) 1999-04-07
KR950012566A (ko) 1995-05-16
DE69417682D1 (de) 1999-05-12
EP0651432A1 (de) 1995-05-03
KR0138609B1 (ko) 1998-06-15
JPH07122498A (ja) 1995-05-12
TW267235B (de) 1996-01-01
JP3332053B2 (ja) 2002-10-07
SG45144A1 (en) 1998-01-16
CA2134426C (en) 1998-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee